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    • 2. 发明授权
    • Producing method of semiconductor device
    • 半导体器件的生产方法
    • US07795156B2
    • 2010-09-14
    • US11664287
    • 2005-10-31
    • Tadashi TerasakiAkito HiranoMasanori NakayamaUnryu Ogawa
    • Tadashi TerasakiAkito HiranoMasanori NakayamaUnryu Ogawa
    • H01L21/469
    • H01L21/28273H01J37/32678H01L21/0214H01L21/02238H01L21/02255H01L21/02332H01L21/02337H01L21/0234H01L21/31662
    • Disclosed is a producing method of a semiconductor device comprising a step of forming a tunnel insulating film of a flash device comprising a first nitridation step of forming a first silicon oxynitride film by nitriding a silicon oxide film formed on a semiconductor silicon base by one of plasma nitridation and thermal nitridation, the plasma nitridation carrying out nitridation process by using a gas activated by plasma discharging a first gas including a first compound which has at least a nitrogen atom in a chemical formula thereof, and the thermal nitridation carrying out nitridation process using heat by using a second gas including a second compound which has at least a nitrogen atom in a chemical formula thereof, and a second nitridation step of forming a second silicon oxynitride film by nitriding the first silicon oxynitride film by the other of the plasma nitridation and the thermal nitridation.
    • 公开了一种半导体器件的制造方法,包括形成闪光器件的隧道绝缘膜的步骤,该闪光器件包括通过用等离子体等离子体中的一种氮化氮化形成第一氧氮化硅膜的第一氮化步骤来形成半导体硅基底上的氧化硅膜 氮化和热氮化,等离子体氮化通过使用通过等离子体激活的气体进行氮化处理,该气体包括具有其化学式中具有至少氮原子的第一化合物的第一气体,并且使用热进行氮化处理 通过使用包含其化学式中具有至少一个氮原子的第二化合物的第二气体和通过另一个等离子体氮化氮化氮化硅膜来形成第二氧氮化硅膜的第二氮化步骤, 热氮化。