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1. 发明申请

US20080096395A1 Producing Method of Semiconductor Device 审中-公开
标题翻译：半导体器件的生产方法
公开(公告)号：US20080096395A1
公开(公告)日：2008-04-24
申请号：US10594739
申请日：2005-07-27
申请人： Tadashi Terasaki , Unryu Ogawa , Masanori Nakayama
发明人： Tadashi Terasaki , Unryu Ogawa , Masanori Nakayama
IPC分类号： H01L21/31
CPC分类号： H01L21/0214 , H01L21/02238 , H01L21/02255 , H01L21/02332 , H01L21/0234 , H01L21/28202 , H01L21/3145 , H01L21/3165 , H01L29/518
摘要： Disclosed is a producing method of a semiconductor device comprising: film thinning a silicon oxide film by heating the silicon oxide film formed after a surface of a silicon substrate is etched by chemical liquid, and one of thermal oxidizing by heating the thinned silicon oxide film to oxidize the silicon oxide film by gas including at least oxygen, and plasma oxidizing the thinned silicon oxide film by plasma discharged gas including at least oxygen.
摘要翻译：本发明公开了一种半导体器件的制造方法，其特征在于，包括：通过加热在硅衬底的表面被化学液体蚀刻后形成的氧化硅膜，使氧化硅膜变薄，将氧化硅薄膜加热而进行热氧化，通过至少包含氧的气体氧化氧化硅膜，以及通过至少包括氧的等离子体排放气体等离子体氧化该薄化的氧化硅膜。

2. 发明申请

US20070298622A1 Producing Method of Semiconductor Device 有权
标题翻译：半导体器件的生产方法
公开(公告)号：US20070298622A1
公开(公告)日：2007-12-27
申请号：US11664287
申请日：2005-10-31
申请人： Tadashi Terasaki , Akito Hirano , Masanori Nakayama , Unryu Ogawa
发明人： Tadashi Terasaki , Akito Hirano , Masanori Nakayama , Unryu Ogawa
IPC分类号： H01L21/318 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L21/28273 , H01J37/32678 , H01L21/0214 , H01L21/02238 , H01L21/02255 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/31662
摘要： Disclosed is a producing method of a semiconductor device comprising a step of forming a tunnel insulating film of a flash device comprising a first nitridation step of forming a first silicon oxynitride film by nitriding a silicon oxide film formed on a semiconductor silicon base by one of plasma nitridation and thermal nitridation, the plasma nitridation carrying out nitridation process by using a gas activated by plasma discharging a first gas including a first compound which has at least a nitrogen atom in a chemical formula thereof, and the thermal nitridation carrying out nitridation process using heat by using a second gas including a second compound which has at least a nitrogen atom in a chemical formula thereof, and a second nitridation step of forming a second silicon oxynitride film by nitriding the first silicon oxynitride film by the other of the plasma nitridation and the thermal nitridation.
摘要翻译：公开了一种半导体器件的制造方法，包括形成闪光器件的隧道绝缘膜的步骤，该闪光器件包括通过用等离子体等离子体中的一种氮化氮化形成第一氧氮化硅膜的第一氮化步骤来形成半导体硅基底上的氧化硅膜氮化和热氮化，等离子体氮化通过使用通过等离子体激活的气体进行氮化处理，所述气体通过等离子体喷射，所述气体包括其化学式中具有至少氮原子的第一化合物的第一气体，并且使用热进行氮化处理通过使用包含其化学式中具有至少一个氮原子的第二化合物的第二气体和通过另一个等离子体氮化氮化氮化硅膜来形成第二氮氧化硅膜的第二氮化步骤，热氮化。

3. 发明授权

US06817264B2 Parking brake operating device for vehicle 失效
标题翻译：车辆驻车制动操作装置
公开(公告)号：US06817264B2
公开(公告)日：2004-11-16
申请号：US10203892
申请日：2002-08-15
申请人： Tetsuo Hiura , Masanori Nakayama
发明人： Tetsuo Hiura , Masanori Nakayama
IPC分类号： B60T706
CPC分类号： B60T7/102 , B60T7/104 , Y10T74/20528 , Y10T74/20636 , Y10T74/20684 , Y10T74/20708 , Y10T74/20726 , Y10T74/2133 , Y10T74/2136
摘要： A parking brake operating device for vehicle, wherein a vehicle is held by a specified braking force by manually rotating a brake lever (2), a held state is released by rotatingly operating the brake lever (2) upward by a specified amount from the held state, and the braking force can be changed to an increasing side and held by further raising the brake lever upward from the held state beyond the specified amount, whereby a release operation can be performed without using a push button or a push rod.
摘要翻译：一种用于车辆的驻车制动操作装置，其中通过手动旋转制动杆（2）以特定的制动力保持车辆，通过将制动杆（2）从所保持的位置向上旋转规定量来释放保持状态状态，并且可以通过将制动杆从保持状态向上升高超过规定量而将制动力改变为增加侧并保持，由此可以在不使用按钮或推杆的情况下执行释放操作。

4. 发明授权

US07073445B2 Illuminating device for a scanner, and a print reading apparatus using the same 失效
标题翻译：用于扫描仪的照明装置和使用其的打印读取装置
公开(公告)号：US07073445B2
公开(公告)日：2006-07-11
申请号：US10891104
申请日：2004-07-15
申请人： Takaharu Yamamoto , Masanori Nakayama
发明人： Takaharu Yamamoto , Masanori Nakayama
IPC分类号： B41F33/00
CPC分类号： H04N1/0287 , H04N1/00278 , H04N1/02815 , H04N1/02885 , H04N1/02895 , H04N2201/0081
摘要： An illuminating unit includes a pair of fluorescent lamps each having a prism sheet mounted peripherally thereof to act as a condensing member, and concave mirrors for reflecting light emitted from the fluorescent lamps to printing paper acting as a print. The prism sheet acts as a condensing member for condensing the light diffused axially of each fluorescent lamp, in directions perpendicular to the axis of the fluorescent lamp. The prism sheet has minute projections approximately in the shape of triangular prisms formed on a surface thereof continually along the axis of the fluorescent lamp and projecting in the directions perpendicular to the axis of the fluorescent lamp.
摘要翻译：照明单元包括一对荧光灯，每个荧光灯具有周边安装的用作聚光部件的棱镜片，以及用于将从荧光灯发出的光反射到作为印刷品的打印纸的凹面镜。棱镜片用作用于在垂直于荧光灯的轴线的方向上会聚在每个荧光灯的轴向扩散的光的聚光部件。棱镜片具有大致呈三角形棱镜形状的微小突起，其在其表面上连续沿着荧光灯的轴线并且在垂直于荧光灯的轴线的方向上突出。

5. 发明申请

US20050024700A1 Illuminating device for a scanner, and a print reading apparatus using the same 失效
标题翻译：用于扫描仪的照明装置和使用其的打印读取装置
公开(公告)号：US20050024700A1
公开(公告)日：2005-02-03
申请号：US10891104
申请日：2004-07-15
申请人： Takaharu Yamamoto , Masanori Nakayama
发明人： Takaharu Yamamoto , Masanori Nakayama
IPC分类号： B41F33/14 , H04N1/00 , H04N1/028 , G02B26/08
CPC分类号： H04N1/0287 , H04N1/00278 , H04N1/02815 , H04N1/02885 , H04N1/02895 , H04N2201/0081
摘要： An illuminating unit includes a pair of fluorescent lamps each having a prism sheet mounted peripherally thereof to act as a condensing member, and concave mirrors for reflecting light emitted from the fluorescent lamps to printing paper acting as a print. The prism sheet acts as a condensing member for condensing the light diffused axially of each fluorescent lamp, in directions perpendicular to the axis of the fluorescent lamp. The prism sheet has minute projections approximately in the shape of triangular prisms formed on a surface thereof continually along the axis of the fluorescent lamp and projecting in the directions perpendicular to the axis of the fluorescent lamp.
摘要翻译：照明单元包括一对荧光灯，每个荧光灯具有周边安装的用作聚光部件的棱镜片，以及用于将从荧光灯发出的光反射到作为印刷品的打印纸的凹面镜。棱镜片用作用于在垂直于荧光灯的轴线的方向上会聚在每个荧光灯的轴向扩散的光的聚光部件。棱镜片具有大致呈三角形棱镜形状的微小突起，其在其表面上连续沿着荧光灯的轴线并且在垂直于荧光灯的轴线的方向上突出。

6. 发明授权

US06198070B1 Laser beam machining method and laser beam machine 有权
标题翻译：激光束加工方法和激光束机
公开(公告)号：US06198070B1
公开(公告)日：2001-03-06
申请号：US09359071
申请日：1999-07-22
申请人： Masanori Nakayama
发明人： Masanori Nakayama
IPC分类号： B23K2600
CPC分类号： B23K26/1476
摘要： A laser beam machining method includes the steps of, irradiating a laser beam on a machining portion of a workpiece for the machining thereof, blowing out an assist gas toward the machining portion of the workpiece continuously during the irradiating step, and blowing out a blow gas toward the machining portion intermittently during the irradiating step.
摘要翻译：激光束加工方法包括以下步骤：将激光束照射在用于其加工的工件的加工部分上，在照射步骤期间连续地向工件的加工部分吹出辅助气体，并吹出吹气在照射步骤期间间歇地朝向加工部分。

7. 发明授权

US07795156B2 Producing method of semiconductor device 有权
标题翻译：半导体器件的生产方法
公开(公告)号：US07795156B2
公开(公告)日：2010-09-14
申请号：US11664287
申请日：2005-10-31
申请人： Tadashi Terasaki , Akito Hirano , Masanori Nakayama , Unryu Ogawa
发明人： Tadashi Terasaki , Akito Hirano , Masanori Nakayama , Unryu Ogawa
IPC分类号： H01L21/469
CPC分类号： H01L21/28273 , H01J37/32678 , H01L21/0214 , H01L21/02238 , H01L21/02255 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/31662
摘要： Disclosed is a producing method of a semiconductor device comprising a step of forming a tunnel insulating film of a flash device comprising a first nitridation step of forming a first silicon oxynitride film by nitriding a silicon oxide film formed on a semiconductor silicon base by one of plasma nitridation and thermal nitridation, the plasma nitridation carrying out nitridation process by using a gas activated by plasma discharging a first gas including a first compound which has at least a nitrogen atom in a chemical formula thereof, and the thermal nitridation carrying out nitridation process using heat by using a second gas including a second compound which has at least a nitrogen atom in a chemical formula thereof, and a second nitridation step of forming a second silicon oxynitride film by nitriding the first silicon oxynitride film by the other of the plasma nitridation and the thermal nitridation.
摘要翻译：公开了一种半导体器件的制造方法，包括形成闪光器件的隧道绝缘膜的步骤，该闪光器件包括通过用等离子体等离子体中的一种氮化氮化形成第一氧氮化硅膜的第一氮化步骤来形成半导体硅基底上的氧化硅膜氮化和热氮化，等离子体氮化通过使用通过等离子体激活的气体进行氮化处理，该气体包括具有其化学式中具有至少氮原子的第一化合物的第一气体，并且使用热进行氮化处理通过使用包含其化学式中具有至少一个氮原子的第二化合物的第二气体和通过另一个等离子体氮化氮化氮化硅膜来形成第二氧氮化硅膜的第二氮化步骤，热氮化。

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