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1. 发明申请

US20070298622A1 Producing Method of Semiconductor Device 有权
标题翻译：半导体器件的生产方法
公开(公告)号：US20070298622A1
公开(公告)日：2007-12-27
申请号：US11664287
申请日：2005-10-31
申请人： Tadashi Terasaki , Akito Hirano , Masanori Nakayama , Unryu Ogawa
发明人： Tadashi Terasaki , Akito Hirano , Masanori Nakayama , Unryu Ogawa
IPC分类号： H01L21/318 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L21/28273 , H01J37/32678 , H01L21/0214 , H01L21/02238 , H01L21/02255 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/31662
摘要： Disclosed is a producing method of a semiconductor device comprising a step of forming a tunnel insulating film of a flash device comprising a first nitridation step of forming a first silicon oxynitride film by nitriding a silicon oxide film formed on a semiconductor silicon base by one of plasma nitridation and thermal nitridation, the plasma nitridation carrying out nitridation process by using a gas activated by plasma discharging a first gas including a first compound which has at least a nitrogen atom in a chemical formula thereof, and the thermal nitridation carrying out nitridation process using heat by using a second gas including a second compound which has at least a nitrogen atom in a chemical formula thereof, and a second nitridation step of forming a second silicon oxynitride film by nitriding the first silicon oxynitride film by the other of the plasma nitridation and the thermal nitridation.
摘要翻译：公开了一种半导体器件的制造方法，包括形成闪光器件的隧道绝缘膜的步骤，该闪光器件包括通过用等离子体等离子体中的一种氮化氮化形成第一氧氮化硅膜的第一氮化步骤来形成半导体硅基底上的氧化硅膜氮化和热氮化，等离子体氮化通过使用通过等离子体激活的气体进行氮化处理，所述气体通过等离子体喷射，所述气体包括其化学式中具有至少氮原子的第一化合物的第一气体，并且使用热进行氮化处理通过使用包含其化学式中具有至少一个氮原子的第二化合物的第二气体和通过另一个等离子体氮化氮化氮化硅膜来形成第二氮氧化硅膜的第二氮化步骤，热氮化。

2. 发明授权

US07795156B2 Producing method of semiconductor device 有权
标题翻译：半导体器件的生产方法
公开(公告)号：US07795156B2
公开(公告)日：2010-09-14
申请号：US11664287
申请日：2005-10-31
申请人： Tadashi Terasaki , Akito Hirano , Masanori Nakayama , Unryu Ogawa
发明人： Tadashi Terasaki , Akito Hirano , Masanori Nakayama , Unryu Ogawa
IPC分类号： H01L21/469
CPC分类号： H01L21/28273 , H01J37/32678 , H01L21/0214 , H01L21/02238 , H01L21/02255 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/31662
摘要： Disclosed is a producing method of a semiconductor device comprising a step of forming a tunnel insulating film of a flash device comprising a first nitridation step of forming a first silicon oxynitride film by nitriding a silicon oxide film formed on a semiconductor silicon base by one of plasma nitridation and thermal nitridation, the plasma nitridation carrying out nitridation process by using a gas activated by plasma discharging a first gas including a first compound which has at least a nitrogen atom in a chemical formula thereof, and the thermal nitridation carrying out nitridation process using heat by using a second gas including a second compound which has at least a nitrogen atom in a chemical formula thereof, and a second nitridation step of forming a second silicon oxynitride film by nitriding the first silicon oxynitride film by the other of the plasma nitridation and the thermal nitridation.
摘要翻译：公开了一种半导体器件的制造方法，包括形成闪光器件的隧道绝缘膜的步骤，该闪光器件包括通过用等离子体等离子体中的一种氮化氮化形成第一氧氮化硅膜的第一氮化步骤来形成半导体硅基底上的氧化硅膜氮化和热氮化，等离子体氮化通过使用通过等离子体激活的气体进行氮化处理，该气体包括具有其化学式中具有至少氮原子的第一化合物的第一气体，并且使用热进行氮化处理通过使用包含其化学式中具有至少一个氮原子的第二化合物的第二气体和通过另一个等离子体氮化氮化氮化硅膜来形成第二氧氮化硅膜的第二氮化步骤，热氮化。

3. 发明授权

US08066894B2 Substrate processing method and substrate processing apparatus 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US08066894B2
公开(公告)日：2011-11-29
申请号：US11886529
申请日：2006-03-14
申请人： Tatsushi Ueda , Tadashi Terasaki , Unryu Ogawa , Akito Hirano
发明人： Tatsushi Ueda , Tadashi Terasaki , Unryu Ogawa , Akito Hirano
IPC分类号： B44C1/22
CPC分类号： H01L21/02236 , C23C16/50 , C23F1/00 , C23F1/08 , H01L21/0223 , H01L21/02233 , H01L21/02238 , H01L21/02252 , H01L21/28247 , H01L21/28273
摘要： A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed.The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen (O2) or oxygen-containing gas supplied to a processing chamber to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the processing chamber to form a plasma discharge, and processing the substrate by the hydrogen plasma.
摘要翻译：可以适当地氧化基板，同时抑制基板的氧化。本发明包括通过使供给到处理室的氢（H 2）气和氧气（O 2）或含氧气体的混合气体形成等离子体放电来产生混合等离子体的步骤，并通过混合等离子体; 以及通过使供给到处理室的氢（H2）气体形成等离子体放电而产生氢等离子体的步骤，以及通过氢等离子体处理衬底。

4. 发明申请

US20090169768A1 Substrate processing method and substrate processing apparatus 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US20090169768A1
公开(公告)日：2009-07-02
申请号：US12320767
申请日：2009-02-04
申请人： Tatsushi Ueda , Tadashi Terasaki , Unryu Ogawa , Akito Hirano
发明人： Tatsushi Ueda , Tadashi Terasaki , Unryu Ogawa , Akito Hirano
IPC分类号： H05H1/24 , C23C16/54
CPC分类号： H01L21/02236 , C23C16/50 , C23F1/00 , C23F1/08 , H01L21/0223 , H01L21/02233 , H01L21/02238 , H01L21/02252 , H01L21/28247 , H01L21/28273
摘要： A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed.The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen (O2) or oxygen-containing gas supplied to a processing chamber to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the processing chamber to form a plasma discharge, and processing the substrate by the hydrogen plasma.
摘要翻译：可以适当地氧化基板，同时抑制基板的氧化。本发明包括通过使供给到处理室的氢（H 2）气和氧气（O 2）或含氧气体的混合气体形成等离子体放电来产生混合等离子体的步骤，并通过混合等离子体; 以及通过使供给到处理室的氢（H2）气体形成等离子体放电而产生氢等离子体的步骤，以及通过氢等离子体处理衬底。

5. 发明授权

US08334215B2 Substrate processing method and substrate processing apparatus 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US08334215B2
公开(公告)日：2012-12-18
申请号：US12320767
申请日：2009-02-04
申请人： Tatsushi Ueda , Tadashi Terasaki , Unryu Ogawa , Akito Hirano
发明人： Tatsushi Ueda , Tadashi Terasaki , Unryu Ogawa , Akito Hirano
IPC分类号： H01L21/302
CPC分类号： H01L21/02236 , C23C16/50 , C23F1/00 , C23F1/08 , H01L21/0223 , H01L21/02233 , H01L21/02238 , H01L21/02252 , H01L21/28247 , H01L21/28273
摘要： A substrate can be appropriately oxidized, while oxidation of the substrate can be suppressed. The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen(O2) or oxygen/containing gas supplied to a processing chamber to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the processing chamber to form a plasma discharge, and processing the substrate by the hydrogen plasma.
摘要翻译：可以适当地氧化基板，同时抑制基板的氧化。本发明包括通过使供给到处理室的氢（H 2）气和氧气（O 2）或含氧气体的混合气体形成等离子体放电来产生混合等离子体的步骤，并通过混合等离子体; 以及通过使供给到处理室的氢（H2）气体形成等离子体放电而产生氢等离子体的步骤，以及通过氢等离子体处理衬底。

6. 发明申请

US20080138994A1 Substrate Processing Method and Substrate Processing Apparatus 有权
标题翻译：基板加工方法及基板加工装置
公开(公告)号：US20080138994A1
公开(公告)日：2008-06-12
申请号：US11886529
申请日：2006-03-14
申请人： Tatsushi Ueda , Tadashi Terasaki , Unryu Ogawa , Akito Hirano
发明人： Tatsushi Ueda , Tadashi Terasaki , Unryu Ogawa , Akito Hirano
IPC分类号： H01L21/00
CPC分类号： H01L21/02236 , C23C16/50 , C23F1/00 , C23F1/08 , H01L21/0223 , H01L21/02233 , H01L21/02238 , H01L21/02252 , H01L21/28247 , H01L21/28273
摘要： A starting substrate can be appropriately oxidized, while oxidation of the starting substrate can be suppressed.The present invention includes a step of generating mixed plasma by causing a mixed gas of hydrogen (H2) gas and oxygen (O2) or oxygen-containing gas supplied to a starting substrate to form a plasma discharge, and processing the starting substrate by the mixed plasma; and a step of generating hydrogen plasma by causing hydrogen (H2) gas supplied to the starting substrate to form a plasma discharge, and processing the starting substrate by the hydrogen plasma.
摘要翻译：可以适当地氧化起始衬底，同时抑制起始衬底的氧化。本发明包括通过使氢（H 2/2）气体和氧（O 2 2 N）的混合气体或供给到起始衬底以形成等离子体放电，并通过混合等离子体处理起始衬底; 以及通过使供给到起始衬底的氢（H 2/2 N）气体形成等离子体放电而产生氢等离子体的步骤，以及通过氢等离子体处理起始衬底。

7. 发明申请

US20100317199A1 Substrate processing apparatus and manufacturing method of semiconductor device 有权
标题翻译：基板加工装置及半导体装置的制造方法
公开(公告)号：US20100317199A1
公开(公告)日：2010-12-16
申请号：US12801444
申请日：2010-06-09
申请人： Tadashi Horie , Akito Hirano , Tadashi Terasaki
发明人： Tadashi Horie , Akito Hirano , Tadashi Terasaki
IPC分类号： H01L21/46
CPC分类号： C23C16/34 , C23C16/56 , H01J37/3244 , H01J37/32449 , H01J2237/2001 , H01L21/76856 , H01L21/76862 , H01L28/60
摘要： To reduce a residual amount of chlorine atoms and oxygen atoms in a metal nitride film, and improve oxidation resistance of the metal nitride, film, in a temperature range of not deteriorating the characteristics of other film adjacent to the metal nitride film. A substrate processing apparatus is provided, comprising: a processing chamber into which a substrate is loaded, having thereon a substrate containing oxygen atoms, chlorine atoms, and metal atoms; a substrate support part for supporting and heating the substrate in the processing chamber; a gas supply part for supplying nitrogen atoms-containing gas and hydrogen atoms-containing gas into the processing chamber; a gas exhaust part for exhausting inside of the processing chamber; a plasma generation part for exciting the nitrogen atoms-containing gas and the hydrogen atoms-containing gas supplied into the processing chamber; and a control part for controlling the substrate support part, the gas supply part, and the plasma generation part.
摘要翻译：为了减少金属氮化物膜中的氯原子和氧原子的残留量，并且在不会使与金属氮化物膜相邻的其它膜的特性不劣化的温度范围内提高金属氮化物膜的抗氧化性。提供了一种基板处理装置，包括：处理室，其上装载有基板，其上具有含有氧原子，氯原子和金属原子的基板; 用于在处理室中支撑和加热衬底的衬底支撑部分; 用于向所述处理室供给含氮原子的气体和含氢原子的气体的气体供给部; 用于排出处理室内部的排气部分; 用于激发含氮原子的气体和供给到处理室中的含氢原子气体的等离子体产生部件; 以及用于控制基板支撑部分，气体供应部分和等离子体产生部分的控制部分。

8. 发明授权

US08178445B2 Substrate processing apparatus and manufacturing method of semiconductor device using plasma generation 有权
标题翻译：基板处理装置及使用等离子体发生的半导体装置的制造方法
公开(公告)号：US08178445B2
公开(公告)日：2012-05-15
申请号：US12801444
申请日：2010-06-09
申请人： Tadashi Horie , Akito Hirano , Tadashi Terasaki
发明人： Tadashi Horie , Akito Hirano , Tadashi Terasaki
IPC分类号： H01L21/31
CPC分类号： C23C16/34 , C23C16/56 , H01J37/3244 , H01J37/32449 , H01J2237/2001 , H01L21/76856 , H01L21/76862 , H01L28/60
摘要： A manufacturing method for a semiconductor device, that loads a substrate on which a film containing oxygen atoms, chlorine atoms, and metal atoms is formed into a processing chamber so as to be supported by a substrate support part. The substrate is heated by the substrate support part. The inside of the processing chamber is exhausted by a gas exhaust part while supplying nitrogen atoms-containing gas and hydorgen atoms-containing gas into the processing chamber by a gas supply part. A plasma generation part is then used to excite the nitrogen atoms-containing gas and the hydrogen atoms-containing gas supplied into the processing chamber.
摘要翻译：一种半导体器件的制造方法，其将形成有含有氧原子，氯原子和金属原子的膜的衬底加载到处理室中以由衬底支撑部支撑。衬底被衬底支撑部分加热。处理室的内部由排气部排出，同时通过气体供给部将含氮原子的气体和含有氢原子的气体供给到处理室。然后使用等离子体产生部件来激发供给到处理室中的含氮原子的气体和含氢原子的气体。

9. 发明授权

US08133820B2 Substrate processing method and substrate processing apparatus 有权
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US08133820B2
公开(公告)日：2012-03-13
申请号：US12086285
申请日：2006-12-15
申请人： Akito Hirano
发明人： Akito Hirano
IPC分类号： H01L21/31
CPC分类号： H01L21/32105
摘要： Substrate contamination from tungsten is prevented. A substrate processing method comprises a main treatment process for oxidizing a substrate containing tungsten with a gas containing oxygen, and a cleaning process for removing tungsten oxides with a gas containing hydrogen. The main treatment process includes loading the substrate containing metal into the processing chamber; supplying gas containing oxygen into the processing chamber; and supplying electric power to a high-frequency electric power supply to generate plasma containing oxygen elements, stopping the supply of electric power, and unloading the substrate from the processing chamber. The cleaning process includes supplying gas containing hydrogen into the processing chamber after unloading the substrate; supplying electric power to a high-frequency electric power supply to generate plasma containing hydrogen elements; and stopping the supply of electric power.
摘要翻译：防止钨的底物污染。基板处理方法包括用含氧气体氧化含钨的基板的主要处理方法以及用含氢气体除去钨氧化物的清洗方法。主要处理过程包括将含有金属的基材装载到处理室中; 将氧气供应到所述处理室中; 向高频电源供给电力，生成含有氧元素的等离子体，停止供电，从处理室卸载基板。清洗过程包括在卸载基板之后，将含有氢气的气体供应到处理室中; 向高频电源供电以产生含有氢元素的等离子体; 并停止供电。

10. 发明申请

US20090258506A1 Substrate Processing Method and Substrate Processing Apparatus 有权
标题翻译：基板加工方法及基板加工装置
公开(公告)号：US20090258506A1
公开(公告)日：2009-10-15
申请号：US12086285
申请日：2006-12-15
申请人： Akito Hirano
发明人： Akito Hirano
IPC分类号： H01L21/302 , B01J19/08
CPC分类号： H01L21/32105
摘要： Substrate contamination from tungsten is prevented.A substrate processing method comprises a main treatment process for oxidizing a substrate containing tungsten with a gas containing oxygen, and a cleaning process for removing tungsten oxides with a gas containing hydrogen. The main treatment process includes a step of loading the substrate containing metal into the processing chamber; a step of supplying gas containing oxygen into the processing chamber; and a step of supplying electric power to a high-frequency electric power supply after supplying the gas to generate plasma containing oxygen elements in order to process the substrate, a step of stopping the supply of electric power to the high-frequency electric power supply, and a step of unloading the substrate from the processing chamber. The cleaning process includes a step of supplying gas containing hydrogen into the processing chamber after unloading the substrate; a step of supplying electric power to a high-frequency electric power supply after supplying the gas containing hydrogen to generate plasma containing hydrogen elements in order to perform cleaning; and a step of stopping the supply of electric power to the high-frequency electric power supply.
摘要翻译：防止钨的底物污染。基板处理方法包括用含氧气体氧化含钨的基板的主要处理方法以及用含氢气体除去钨氧化物的清洗方法。主要处理方法包括将含有金属的基材装载到处理室中的步骤; 向处理室供给含氧气体的步骤; 以及在供给气体以产生含有氧元素的等离子体以供处理基板之后，向高频电力供给电力的步骤，停止向高频电力供应电力的步骤，以及从处理室卸载基板的步骤。清洗过程包括在卸载基板之后向处理室供应含氢气体的步骤; 在供给含氢气体以产生含有氢元素的等离子体之后向高频电力供给电力进行清洗的步骤; 以及停止向高频电力供给电力的步骤。

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