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1. 发明授权

US4843238A Method for identifying a blistered film in layered films 失效
标题翻译：用于识别层状膜中起泡膜的方法
公开(公告)号：US4843238A
公开(公告)日：1989-06-27
申请号：US155101
申请日：1988-02-11
申请人： Tadashi Nishioka , Hiroaki Morimoto , Yoji Mashiko , Hiroshi Koyama
发明人： Tadashi Nishioka , Hiroaki Morimoto , Yoji Mashiko , Hiroshi Koyama
IPC分类号： H01L21/66 , G01N23/225 , G01Q60/00 , H01J37/28
CPC分类号： G01N23/2255
摘要： In a method for identifying blistered film in layered films, a focused ion beam irradiates the approximate center of the blister and a portion which has no blister, and individual sets of the measurement data relating to the respective numbers of secondary electrons generated by the irradiation are compared to determine which film of layered films has blistered. Since the focused ion beam is employed, the present method is applicable to the detection of a small blister in layered films. Furthermore, since an enormous number of cutting operations as might have been required in the prior art are eliminated, the present method can be carried out, stably, positively and economically.
摘要翻译：在层状膜中识别起泡膜的方法中，聚焦离子束照射泡囊的大致中心和没有起泡的部分，并且与由照射产生的二次电子的相应数量有关的各组测量数据是相比之下确定哪一层分层膜已经起泡。由于采用聚焦离子束，因此本方法适用于分层膜中小泡的检测。此外，由于消除了现有技术中可能需要的大量切割操作，因此可以稳定，积极和经济地执行本方法。

2. 发明授权

US5043290A Process for forming electrodes for semiconductor devices by focused ion beam technology 失效
标题翻译：通过聚焦离子束技术形成半导体器件电极的工艺
公开(公告)号：US5043290A
公开(公告)日：1991-08-27
申请号：US338274
申请日：1989-04-14
申请人： Tadashi Nishioka , Yoji Mashiko , Hiroaki Morimoto , Hiroshi Koyama
发明人： Tadashi Nishioka , Yoji Mashiko , Hiroaki Morimoto , Hiroshi Koyama
IPC分类号： H01L21/768
CPC分类号： H01L21/76877 , Y10S148/02 , Y10S148/05 , Y10S148/131 , Y10S148/158
摘要： A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process includes the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connecting the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed is greatly reduced.

3. 发明授权

US4948749A Process for forming electrodes for semiconductor devices 失效
标题翻译：用于形成用于半导体器件的电极的工艺
公开(公告)号：US4948749A
公开(公告)日：1990-08-14
申请号：US338236
申请日：1989-04-14
申请人： Tadashi Nishioka , Yoji Mashiko , Hiroaki Morimoto , Hiroshi Koyama
发明人： Tadashi Nishioka , Yoji Mashiko , Hiroaki Morimoto , Hiroshi Koyama
IPC分类号： H01L21/60 , H01L21/768
CPC分类号： H01L21/76897 , H01L21/76877 , Y10S148/05
摘要： A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process includes the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connectig the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed is greatly reduced.
摘要翻译：一种用于形成具有半导体衬底的半导体器件的电极和由电绝缘涂层覆盖和保护的导电部分的工艺。该方法包括以下步骤：在电绝缘涂层上形成导电膜，在电绝缘涂层的一部分暴露在导电部分上方的位置，形成与导电膜上的外部电路连接的电极，将第一导电膜连接到会聚离子束，将电极电连接到导电膜的暴露部分，以及去除未被电极覆盖的导电膜的部分。结果，在电极形成时连接到导电部分的半导体器件的内部电路的击穿的可能性大大降低。

4. 发明授权

US4853341A Process for forming electrodes for semiconductor devices using focused ion beams 失效
标题翻译：使用聚焦离子束形成用于半导体器件的电极的工艺
公开(公告)号：US4853341A
公开(公告)日：1989-08-01
申请号：US118031
申请日：1987-11-09
申请人： Tadashi Nishioka , Yoji Mashiko , Hiroaki Morimoto , Hiroshi Koyama
发明人： Tadashi Nishioka , Yoji Mashiko , Hiroaki Morimoto , Hiroshi Koyama
IPC分类号： H01L21/768
CPC分类号： H01L21/76877 , Y10S148/02 , Y10S148/05 , Y10S148/131 , Y10S148/158
摘要： A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process including the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connecting the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed in greatly reduced.
摘要翻译：一种用于形成具有半导体衬底的半导体器件的电极和由电绝缘涂层覆盖和保护的导电部分的工艺。该方法包括以下步骤：在电绝缘涂层上形成导电膜，通过暴露电绝缘涂层的部分和形成在导电膜上方的与外部电路连接的电极，覆盖导电部分第一导电膜到会聚的离子束，将电极电连接到导电膜的暴露部分，以及去除未被电极覆盖的导电膜的部分。结果，在电极形成时连接到导电部分的半导体器件的内部电路的击穿的可能性大大降低。

5. 发明授权

US4962059A Process for forming electrodes for semiconductor devices using focused ion beam deposition 失效
标题翻译：使用聚焦离子束沉积形成用于半导体器件的电极的工艺
公开(公告)号：US4962059A
公开(公告)日：1990-10-09
申请号：US338233
申请日：1989-04-14
申请人： Tadashi Nishioka , Yoji Mashiko , Hiroaki Morimoto , Hiroshi Koyama
发明人： Tadashi Nishioka , Yoji Mashiko , Hiroaki Morimoto , Hiroshi Koyama
IPC分类号： H01L21/768
CPC分类号： H01L21/76877 , Y10S148/02 , Y10S148/05 , Y10S148/131 , Y10S148/158
摘要： A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process includes the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connecting the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed is greatly reduced.

6. 发明授权

US4723062A Aluminum circuit to be disconnected and method of cutting the same 失效
标题翻译：铝电路要断线，切割方法一样
公开(公告)号：US4723062A
公开(公告)日：1988-02-02
申请号：US061436
申请日：1987-06-15
申请人： Tadashi Nishioka , Hiroshi Koyama , Yoji Mashiko
发明人： Tadashi Nishioka , Hiroshi Koyama , Yoji Mashiko
IPC分类号： H01L23/52 , C23C16/56 , C23F4/00 , H01L21/3205 , H05K1/09 , H05K3/02 , H05K3/08 , H05K3/22 , B23K26/00
CPC分类号： C23C16/56 , C23F4/00 , H05K3/08 , H05K3/225 , H05K1/09 , H05K2203/107 , H05K2203/1142 , H05K2203/175 , H05K3/027 , Y10T29/49156
摘要： In order to cut a portion of an aluminum interconnection in an aluminum circuit to be disconnected, the aluminum interconnection portion in the region to be cut is covered with a hydrogen-containing silicon nitride film by plasma CVD and is then irradiated with laser beams in an operating sequence consisting of three steps: the first step with relatively low power intensity and long irradiation time duration, the second step with intermediate power intensity and short irradiation time duration and the third step with relatively high power intensity and shortest irradiation time duration.
摘要翻译：为了将要断开的铝电路中的铝互连部分切割掉，待切割区域中的铝互连部分通过等离子体CVD被含氢氮化硅膜覆盖，然后用激光束操作顺序由三个步骤组成：第一步功率相对较低，照射持续时间长，第二步具有中等功率强度和较短的照射时间，第三步具有较高的功率强度和最短的照射时间。

7. 发明授权

US4636400A Method of treating silicon nitride film formed by plasma deposition 失效
标题翻译：通过等离子体沉积形成的氮化硅膜的处理方法
公开(公告)号：US4636400A
公开(公告)日：1987-01-13
申请号：US773918
申请日：1985-09-09
申请人： Tadashi Nishioka , Hiroshi Koyama , Yoji Mashiko
发明人： Tadashi Nishioka , Hiroshi Koyama , Yoji Mashiko
IPC分类号： H01L21/318 , C23C16/34 , C23C16/56 , H01L21/263 , B05D3/06
CPC分类号： C23C16/56 , C23C16/345
摘要： A method of treating a silicon nitride film formed by plasma deposition and deposited on a substrate, which comprises: (1) irradiating the silicon nitride film, and (2) heating the silicon nitride film during the irradiating.
摘要翻译：一种处理通过等离子体沉积形成并沉积在衬底上的氮化硅膜的方法，包括：（1）照射氮化硅膜，和（2）在照射期间加热氮化硅膜。

8. 发明授权

US4691078A Aluminum circuit to be disconnected and method of cutting the same 失效
标题翻译：铝电路要断线，切割方法一样
公开(公告)号：US4691078A
公开(公告)日：1987-09-01
申请号：US823091
申请日：1986-01-21
申请人： Tadashi Nishioka , Hiroshi Koyama , Yoji Mashiko
发明人： Tadashi Nishioka , Hiroshi Koyama , Yoji Mashiko
IPC分类号： H01L23/52 , C23C16/56 , C23F4/00 , H01L21/3205 , H05K1/09 , H05K3/02 , H05K3/08 , H05K3/22 , H05K1/00 , B23K26/00
CPC分类号： C23C16/56 , C23F4/00 , H05K3/08 , H05K3/225 , H05K1/09 , H05K2203/107 , H05K2203/1142 , H05K2203/175 , H05K3/027 , Y10T29/49156
摘要： In order to cut a portion of an aluminum interconnection to be disconnected in an aluminum circuit, the aluminum interconnection portion in the region to be cut is covered with a hydrogen-containing silicon nitride film by plasma CVD and is then irradiated with laser beams in an operating sequence consisting of three steps: the first step with relatively low power intensity and long irradiation time duration, the second step with intermediate power intensity and short irradiation time duration and the third step with relatively high power intensity and shortest irradiation time duration.
摘要翻译：为了切断在铝电路中要断开的铝互连部分，待切割区域中的铝互连部分通过等离子体CVD被含氢的氮化硅膜覆盖，然后用激光束照射在操作顺序由三个步骤组成：第一步功率相对较低，照射持续时间长，第二步具有中等功率强度和较短的照射时间，第三步具有较高的功率强度和最短的照射时间。

9. 发明授权

US4990489A Read only memory device including a superconductive electrode 失效
标题翻译：只读存储器件包括超导电极
公开(公告)号：US4990489A
公开(公告)日：1991-02-05
申请号：US215802
申请日：1988-07-06
申请人： Yoji Mashiko , Tadashi Nishioka
发明人： Yoji Mashiko , Tadashi Nishioka
IPC分类号： H01L23/522 , G11C7/00 , G11C17/00 , G11C17/12 , H01L21/28 , H01L21/768 , H01L21/82 , H01L21/8246 , H01L23/525 , H01L23/532 , H01L27/112 , H01L29/43 , H01L39/00 , H01L39/06 , H01L39/24
CPC分类号： H01L23/53285 , G11C17/00 , G11C17/12 , G11C7/005 , H01L21/76891 , H01L23/5258 , H01L2924/0002 , Y10S148/046 , Y10S505/70 , Y10S505/703 , Y10S505/706 , Y10S505/831 , Y10S505/841 , Y10S505/923
摘要： A read only memory device includes a first electrode and a second electrode arranged in an overlapping relation with the first electrode so as to be geometrically in connection at an intersection therewith corresponding to a storage location for one type of data. At least one of the first and second electrodes is formed of a ceramics system high temperature superconductor. A prescribed one of the two electrodes which is formed of the high temperature superconductor has a high resistance region for insulating the first and second electrodes from each other at an intersection corresponding to a storage location for another type of stored data. The high resistance region is formed by irradiating an intersection with a focused ion beam.
摘要翻译：只读存储器件包括第一电极和第二电极，该第一电极和第二电极以与第一电极重叠的关系布置，以便在与其对应于一种类型的数据的存储位置的交叉点几何地连接。第一和第二电极中的至少一个由陶瓷系统的高温超导体形成。由高温超导体形成的两个电极中规定的一个电极具有高电阻区域，用于在对应于另一类型的存储数据的存储位置的交叉点处彼此绝缘第一和第二电极。通过照射与聚焦离子束的交点来形成高电阻区域。

10. 发明授权

US5130273A Method for manufacturing a read only memory device using a focused ion beam to alter superconductivity 失效
标题翻译：使用聚焦离子束制造只读存储器件以提高超导性的方法
公开(公告)号：US5130273A
公开(公告)日：1992-07-14
申请号：US642246
申请日：1991-01-07
申请人： Yoji Mashiko , Tadashi Nishioka
发明人： Yoji Mashiko , Tadashi Nishioka
IPC分类号： H01L23/522 , G11C7/00 , G11C17/00 , G11C17/12 , H01L21/28 , H01L21/768 , H01L21/82 , H01L21/8246 , H01L23/525 , H01L23/532 , H01L27/112 , H01L29/43 , H01L39/00 , H01L39/06 , H01L39/24
CPC分类号： H01L23/53285 , G11C17/00 , G11C17/12 , G11C7/005 , H01L21/76891 , H01L23/5258 , H01L2924/0002 , Y10S148/046 , Y10S505/70 , Y10S505/703 , Y10S505/706 , Y10S505/831 , Y10S505/841 , Y10S505/923
摘要： A read only memory device comprises a first electrode, and a second electrode arranged overlapping with the first electrode so as to be geometrically in connection at the intersection. At least one of the first and second electrodes is formed of a ceramics system high temperature superconductor. A prescribed electrode out of said electrodes which is formed of the high temperature superconductor has a high resistance region for insulating the first and second electrodes from each other at the intersection corresponding to a prescribed stored data.In the manufacturing method, the first and second electrodes are formed and, thereafter, a high resistance region is formed by irradiating focused ion beam.

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