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1. 发明授权

US5925886A Ion source and an ion implanting apparatus using it 失效
标题翻译：离子源和使用它的离子注入装置
公开(公告)号：US5925886A
公开(公告)日：1999-07-20
申请号：US879302
申请日：1997-06-19
申请人： Takayoshi Seki , Katsumi Tokiguchi
发明人： Takayoshi Seki , Katsumi Tokiguchi
IPC分类号： C23C14/35 , C23C14/48 , H01J27/16 , H01J27/18 , H01J37/08 , H01J37/317 , H01L21/265
CPC分类号： H01J27/18 , H01J2237/0817 , H01J2237/31701
摘要： An ion source comprises a discharge chamber; a wave guide transmitting microwave to generate plasma within said discharge chamber; and a matching tube, located between the discharge chamber and the wave guide, the cross-sectional form of which is tapered in the width thereof in the direction of propagation of the microwave.
摘要翻译：离子源包括放电室; 发射微波以在所述放电室内产生等离子体的波导; 以及位于放电室和波导之间的匹配管，其横截面形式沿着其在微波传播方向上的宽度逐渐变细。

2. 发明授权

US5086256A External resonance circuit type radio frequency quadrupole accelerator 失效
标题翻译：外部谐振电路类型无线电频率四方加速器
公开(公告)号：US5086256A
公开(公告)日：1992-02-04
申请号：US438018
申请日：1989-11-20
申请人： Katsumi Tokiguchi , Kensuke Amemiya , Noriyuki Sakudo , Takayoshi Seki
发明人： Katsumi Tokiguchi , Kensuke Amemiya , Noriyuki Sakudo , Takayoshi Seki
IPC分类号： H01J27/02 , H01J37/08 , H01J37/147 , H01J37/317 , H05H7/02 , H05H9/00
CPC分类号： H01J37/3171 , H05H7/02
摘要： An Mev ion implantation apparatus which does not contaminate a sample substrate with heavy metal particles. The apparatus includes an external resonance circuit type RFQ accelerator incluidng undulated quadrupole electrodes and a separate radio frequency resonance circuit for generating a radio frequency high voltage to be supplied to the electrodes. The undulated quadrupole electrodes and at least a part of metallic supports for supporting the electrodes and voltage supplying lines are provided with a surface coating of silicon, silicon doped with an impurity such as boron, phosphorus, or arsenic, or a light element having a mass number of 28 or less, such as carbon.

3. 发明授权

US4533831A Non-mass-analyzed ion implantation 失效
标题翻译：非质量分析离子注入
公开(公告)号：US4533831A
公开(公告)日：1985-08-06
申请号：US477375
申请日：1983-03-21
申请人： Haruo Itoh , Katsumi Tokiguchi , Terunori Warabisako , Tadashi Saitoh , Takashi Tokuyama
发明人： Haruo Itoh , Katsumi Tokiguchi , Terunori Warabisako , Tadashi Saitoh , Takashi Tokuyama
IPC分类号： H01J37/147 , H01J37/317 , H01L21/223 , H01L21/265 , G01N23/00
CPC分类号： H01L21/2236 , H01J37/3171
摘要： A non-mass-analyzed ion implantation process wherein two or more species of ions of the same polarity having greatly different ion masses are generated from a compound source material, the ions are accelerated under the application of an electric field, and the accelerated ions are scanned under the application of a magnetic field so as to be implanted into a target at a distribution profile which varies with the species of ions. An ion implantation apparatus can be simplified. A large ion beam current with a large spot size can be used and ions can be implanted to the target at a large dose within a short time. Especially, the non-mass-analyzed ion implantation is advantageously utilized for production of solar batteries.
摘要翻译：一种非质量分析的离子注入方法，其中从化合物源材料产生具有极大不同离子质量的相同极性的两种或更多种离子，在施加电场的情况下离子被加速，加速的离子是在施加磁场的情况下进行扫描，以便以离子种类变化的分布轮廓将其植入靶中。离子注入装置可以简化。可以使用具有大光斑尺寸的大离子束电流，并且可以在短时间内以大剂量将离子注入靶。特别地，非质量分析的离子注入有利地用于生产太阳能电池。

4. 发明授权

US5945681A Ion implanting apparatus capable of preventing discharge flaw production on reverse side surface of wafer 失效
公开(公告)号：US5945681A
公开(公告)日：1999-08-31
申请号：US826421
申请日：1997-03-27
申请人： Katsumi Tokiguchi , Takayoshi Seki , Kensuke Amemiya , Yasuo Yamashita , Kazuo Mera , Isao Hashimoto , Keiji Arimatsu
发明人： Katsumi Tokiguchi , Takayoshi Seki , Kensuke Amemiya , Yasuo Yamashita , Kazuo Mera , Isao Hashimoto , Keiji Arimatsu
IPC分类号： H01J37/20 , C23C14/48 , H01J37/02 , H01J37/30 , H01J37/317 , H01L21/265
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/026 , H01J37/3174 , H01J2237/0044
摘要： An ion implanting apparatus is capable of preventing occurrence of discharge flaws on a reverse side surface of a silicon wafer when the silicon wafer is ion-implanted at a temperature exceeding 300.degree. C. The ion implanting apparatus has an ion current of 10 mA to 100 mA, and an electron beam generating apparatus for irradiating an electron beam onto the reverse side surface of the silicon wafer. The electron beam is controlled so that current flowing between the wafer and the rotating disk supporting the wafer becomes substantially zero.

5. 发明授权

US5349196A Ion implanting apparatus 失效
标题翻译：离子注入装置
公开(公告)号：US5349196A
公开(公告)日：1994-09-20
申请号：US43794
申请日：1993-04-07
申请人： Kensuke Amemiya , Yoshimi Hakamata , Katsumi Tokiguchi , Noriyuki Sakudo
发明人： Kensuke Amemiya , Yoshimi Hakamata , Katsumi Tokiguchi , Noriyuki Sakudo
IPC分类号： C23C14/48 , H01J37/30 , H01J37/317 , H01L21/265
CPC分类号： H01J37/3007 , H01J37/3171
摘要： An ion implanting apparatus includes a magnetic quadrupole lens disposed between an ion source and an RFQ accelerator. The magnetic quadrupole lens carries out mass spectrometry of an ion beam extracted from the ion source while converging the ion beam, and reduces the divergence of the ion beam due to the space charge effect as compared to an electrostatic quadrupole lens. The use of the magnetic quadrupole lens makes it possible to utilize to a maximum extent the ion beam extracted from the ion source and to restrict to a minimum the reduction in the current of the ion beam during passage of the ion beam, thereby making it possible to generate a high-energy ion beam having a large current on the order of several tens of milliamperes.
摘要翻译：离子注入装置包括设置在离子源和RFQ加速器之间的磁性四极透镜。磁性四极杆透镜在离子束收敛时进行从离子源提取的离子束的质谱，并且与静电四极透镜相比，由于空间电荷效应而减小离子束的发散。使用磁性四极透镜使得可以最大程度地利用从离子源提取的离子束并且在离子束通过期间限制离子束的电流的最小化，从而使其成为可能以产生具有大约几十毫安量级的大电流的高能离子束。

6. 发明授权

US4629930A Plasma ion source 失效
标题翻译：等离子体离子源
公开(公告)号：US4629930A
公开(公告)日：1986-12-16
申请号：US517696
申请日：1983-07-27
申请人： Noriyuki Sakudo , Osami Okada , Susumu Ozasa , Katsumi Tokiguchi , Hidemi Koike , Shunroku Taya , Mitsunori Komatsumoto , Mitsuo Komatsu
发明人： Noriyuki Sakudo , Osami Okada , Susumu Ozasa , Katsumi Tokiguchi , Hidemi Koike , Shunroku Taya , Mitsunori Komatsumoto , Mitsuo Komatsu
IPC分类号： H01J27/02 , H01J27/16 , H05H7/08
CPC分类号： H01J27/16 , H01J27/022
摘要： A plasma ion source includes a discharge chamber in which a plasma is produced by plasma generator, with an acceleration electrode being disposed adjacent to the discharge chamber in order to extract ions from the produced plasma. A deceleration electrode is disposed adjacent to the acceleration electrode to decelerate the extracted ions, and a ground electrode is disposed adjacent to the deceleration electrode. An insulator container is disposed so as to surround the discharge chamber and the respective electrodes, and a shield ring electrode of ground potential is disposed in the vicinity of the deceleration electrode and along an inner wall surface of the insulator container in order to prevent any discharge from arising across the deceleration electrode and the ground electrode.
摘要翻译：等离子体离子源包括其中由等离子体发生器产生等离子体的放电室，其中加速电极邻近放电室设置，以从所产生的等离子体中提取离子。减速电极与加速电极相邻地设置，以使所提取的离子减速，并且接地电极与减速电极相邻配置。绝缘体容器设置成围绕放电室和各个电极，并且将地电位的屏蔽环电极设置在减速电极附近并且沿着绝缘体容器的内壁表面设置，以防止任何放电来自减速电极和接地电极。

7. 发明授权

US4543465A Microwave plasma source having improved switching operation from plasma ignition phase to normal ion extraction phase 失效
标题翻译：微波等离子体源具有从等离子体点火阶段到正常离子提取阶段的改进的开关操作
公开(公告)号：US4543465A
公开(公告)日：1985-09-24
申请号：US517404
申请日：1983-07-26
申请人： Noriyuki Sakudo , Katsunobu Abe , Katsumi Tokiguchi , Hidemi Koike , Osami Okada
发明人： Noriyuki Sakudo , Katsunobu Abe , Katsumi Tokiguchi , Hidemi Koike , Osami Okada
IPC分类号： H01J27/16 , B23K10/00 , C23F4/00 , H01J37/08 , H01L21/302 , H01L21/3065 , B23K9/00 , H01J27/00
CPC分类号： B23K10/006
摘要： In a microwave plasma source, a discharge space supplied with a microwave electric field is supplied with a DC magnetic field. A material to be ionized is introduced into the discharge space to produce plasma, whereby ions are extracted through an ion extracting system. A switch is provided for effecting through switching operation the change-over of the magnetic field applied to the discharge space from the intensity for the ignition of plasma to the intensity for ion extraction in succession to completion of the plasma ignition.
摘要翻译：在微波等离子体源中，向微波电场供给的放电空间被供给直流磁场。将被离子化的材料引入放电空间以产生等离子体，从而通过离子提取系统提取离子。提供了一种开关，用于通过切换操作，将施加到放电空间的磁场的转换从等离子体的点火强度切换到等离子体点火完成之后的离子提取强度。

8. 发明授权

US4058748A Microwave discharge ion source 失效
标题翻译：微波放电离子源
公开(公告)号：US4058748A
公开(公告)日：1977-11-15
申请号：US686121
申请日：1976-05-13
申请人： Noriyuki Sakudo , Katsumi Tokiguchi , Ichiro Kanomata
发明人： Noriyuki Sakudo , Katsumi Tokiguchi , Ichiro Kanomata
IPC分类号： H01J27/18 , H01J49/10 , H01J27/00
CPC分类号： H01J27/18 , H01J49/105
摘要： An ion source for emitting an efficient radiation of ion beam having a rectangular cross section includes a set of parallel electrodes to which a microwave power is supplied to generate a microwave electric field in an electrode gap. A DC magnetic field is applied in a direction along the opposing surfaces of the electrodes to provide a microwave discharge in the electrode gap in cooperation with the microwave electric field crossing therewith. The electrode gap or discharge space has a rectangular cross section perpendicular to a direction along which ions produced by the microwave discharge are extracted as an ion beam with a side of the cross section corresponding to the distance between the electrodes being shorter than its side crossing therewith. This allows the efficient generation of the ion beam having the rectangular cross section through one or more extraction electrodes which include rectangular slits corresponding in pattern to the above-mentioned cross section.
摘要翻译：用于发射具有矩形横截面的离子束的有效辐射的离子源包括一组平行电极，微波功率被供应到该电极以在电极间隙中产生微波电场。沿着电极的相对表面的方向施加DC磁场，以与与其交叉的微波电场配合，在电极间隙中提供微波放电。电极间隙或放电空间具有垂直于微波放电产生的离子的离子束垂直的方向截面，其横截面的一侧对应于电极之间的距离短于与其交叉的侧面。这允许通过一个或多个提取电极有效地产生具有矩形横截面的离子束，所述提取电极包括与上述横截面相对应的矩形狭缝。

9. 发明授权

US6104025A Ion implanting apparatus capable of preventing discharge flaw production on reverse side surface of wafer 失效
标题翻译：离子注入装置能够防止在晶片背面产生放电缺陷
公开(公告)号：US6104025A
公开(公告)日：2000-08-15
申请号：US314303
申请日：1999-05-19
申请人： Katsumi Tokiguchi , Takayoshi Seki , Kensuke Amemiya , Yasuo Yamashita , Kazuo Mera , Isao Hashimoto , Keiji Arimatsu
发明人： Katsumi Tokiguchi , Takayoshi Seki , Kensuke Amemiya , Yasuo Yamashita , Kazuo Mera , Isao Hashimoto , Keiji Arimatsu
IPC分类号： H01J37/20 , C23C14/48 , H01J37/02 , H01J37/30 , H01J37/317 , H01L21/265
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/026 , H01J37/3174 , H01J2237/0044
摘要： An ion implanting apparatus is capable of preventing occurrence of discharge flaws on a reverse side surface of a silicon wafer when the silicon wafer is ion-implanted at a temperature exceeding 300.degree. C. The ion implanting apparatus has an ion current of 10 mA to 100 mA, and an electron beam generating apparatus for irradiating an electron beam onto the reverse side surface of the silicon wafer. The electron beam is controlled so that current flowing between the wafer and the rotating disk supporting the wafer becomes substantially zero.
摘要翻译：当硅晶片在超过300℃的温度下离子注入时，离子注入装置能够防止在硅晶片的背面出现放电缺陷。离子注入装置的离子电流为10mA至100 以及用于将电子束照射到硅晶片的反面上的电子束产生装置。控制电子束，使得在晶片和支撑晶片的旋转盘之间流动的电流基本上为零。

10. 发明授权

US5729027A Ion implanter 失效
标题翻译：离子注入机
公开(公告)号：US5729027A
公开(公告)日：1998-03-17
申请号：US454548
申请日：1995-05-30
申请人： Katsumi Tokiguchi , Takayoshi Seki , Tetsunori Kaji
发明人： Katsumi Tokiguchi , Takayoshi Seki , Tetsunori Kaji
IPC分类号： C23C14/48 , H01J37/317 , H01L21/265
CPC分类号： H01J37/317 , H01J2237/04756
摘要： An ion implanter for implementing ion implantation using mass-separated ions using a limited energy of less than 10 keV, locates the decelerator between the ion source and the mass separator, and the beam transport space provided between the ion source and the decelerator is maintained at a higher negative voltage so as to decelerate the ion beam in combination, ensuring a large-current ion beam in excess of 1 mA to be maintained on the surface of a target.
摘要翻译：使用小于10keV的有限能量使用质量分离的离子实现离子注入的离子注入机将离子源和质量分离器之间的减速器定位，并且将设置在离子源和减速器之间的束传送空间保持在更高的负电压以使离子束组合减速，确保在目标表面上保持超过1mA的大电流离子束。

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