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1. 发明授权

US6083535A Effervescent granular preparation for keeping cut flower freshness 失效
标题翻译：用于保持切花新鲜度的泡腾颗粒制剂
公开(公告)号：US6083535A
公开(公告)日：2000-07-04
申请号：US930995
申请日：1997-12-29
申请人： Tadahiko Chiba , Shiro Yamazaki , Toshihide Saishoji
发明人： Tadahiko Chiba , Shiro Yamazaki , Toshihide Saishoji
IPC分类号： A01N3/02 , A01N43/653 , A61K9/14
CPC分类号： A01N3/02 , A01N43/653
摘要： An effervescent granular preparation for keeping cut flower freshness includes an azole-substituted cyclopentanol derivative represented by formula (I) (set forth below) and 2-bromo-2-nitro-1, 3-propanediol as effective components and to a process for producing the same. The effervescent granular preparation is produced by granulation of a mixture containing at least one of glucose, D-mannitol and sucrose as an excipient by incorporating an organic acid such as citric acid or malic acid and a hydrogen carbonate such as sodium hydrogen carbonate. ##STR1## wherein A represents a nitrogen atom or a CH group, R.sup.1 and R.sup.2 represent each independently a hydrogen or a C.sub.1 -C.sub.3 alkyl group, and X represents a hydrogen atom or a halogen atom.
摘要翻译： PCT No.PCT / JP96 / 00445 Sec。 371日期1997年12月29日第 102（e）日期1997年12月29日PCT提交1996年2月27日PCT公布。出版物WO96 / 32012 PCT 日期1996年10月17日用于保持切花新鲜度的泡腾颗粒制剂包括由式（I）表示的唑类取代的环戊醇衍生物（下文）和作为有效成分的2-溴-2-硝基-1,3-丙二醇，涉及其制造方法。通过掺入有机酸如柠檬酸或苹果酸和碳酸氢钠如碳酸氢钠，通过造粒含有葡萄糖，D-甘露糖醇和蔗糖中的至少一种作为赋形剂的混合物来制备泡腾颗粒制剂。其中A表示氮原子或CH基团，R 1和R 2各自独立地表示氢或C 1 -C 3烷基，X表示氢原子或卤素原子。

2. 发明授权

US4992093A Azolylcyclopentanol derivatives and agricultural and horticultural composition containing the same as active ingredients 失效
标题翻译：唑类环戊醇衍生物和含有与活性成分相同的农业和园艺成分
公开(公告)号：US4992093A
公开(公告)日：1991-02-12
申请号：US357422
申请日：1989-05-25
申请人： Satoru Kumazawa , Atsushi Ito , Nobuo Sato , Toshihide Saishoji , Masahiro Hamada , Shiro Yamazaki , Hiroyuki Enari
发明人： Satoru Kumazawa , Atsushi Ito , Nobuo Sato , Toshihide Saishoji , Masahiro Hamada , Shiro Yamazaki , Hiroyuki Enari
IPC分类号： A01N43/50 , A01N43/653 , C07D233/58 , C07D233/60 , C07D249/08 , C07D521/00
CPC分类号： C07D231/12 , A01N43/50 , A01N43/653 , C07D233/56 , C07D249/08
摘要： Disclosed herein are a derivative of azole having a usefulness in controlling plant fungal diseases, in regulating plant growth and in killing weeds, a process for producing the derivatives of azole and a composition having a fungicidal activity, a plant growth regulating activity and a herbicidal activity and containing the derivative of azole as an active ingredient for use in agriculture and horticulture.

3. 发明授权

US4863505A Novel derivative of azole, and agricultural and horticultural composition containing the same as an active incredient 失效
标题翻译：唑类的新衍生物，以及与活性成分相同的农业和园艺成分
公开(公告)号：US4863505A
公开(公告)日：1989-09-05
申请号：US903992
申请日：1986-09-04
申请人： Satoru Kumazawa , Atsushi Ito , Nobuo Sato , Toshihide Saishoji , Masahiro Hamada , Shiro Yamazaki , Hiroyuki Enari
发明人： Satoru Kumazawa , Atsushi Ito , Nobuo Sato , Toshihide Saishoji , Masahiro Hamada , Shiro Yamazaki , Hiroyuki Enari
IPC分类号： A01N43/50 , A01N43/653 , C07D233/58 , C07D233/60 , C07D249/08 , C07D521/00
CPC分类号： C07D231/12 , A01N43/50 , A01N43/653 , C07D233/56 , C07D249/08
摘要： Disclosed herein are a derivative of azole having a usefulness in controlling plant fungal diseases, in regulating plant growth and in killing weeds, a process for producing the derivative of azole and a composition having a fungicidal activity, a plant growth regulating activity and a herbicidal activity and containing the derivative of azole as an active ingredient for use in agriculture and horticulture.
摘要翻译：本文公开了具有控制植物真菌病，调节植物生长和杀死杂草的唑类衍生物，制备唑类衍生物的方法和具有杀真菌活性，植物生长调节活性和除草活性的组合物并含有唑类衍生物作为农业和园艺用的活性成分。

4. 发明授权

US08227324B2 Method for producing group III nitride-based compound semiconductor crystal 有权
标题翻译：制备III族氮化物基化合物半导体晶体的方法
公开(公告)号：US08227324B2
公开(公告)日：2012-07-24
申请号：US12448207
申请日：2007-12-10
申请人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： H01L21/20
CPC分类号： C30B19/02 , C30B9/10 , C30B29/406 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02625
摘要： A GaN single crystal 20 is grown on a crystal growth surface of a seed crystal (GaN layer 13) through the flux method in a nitrogen (N2) atmosphere at 3.7 MPa and 870° C. employing a flux mixture including Ga, Na, and Li at about 870° C. Since the back surface of the template 10 is R-plane of the sapphire substrate 11, the template 10 is readily corroded or dissolved in the flux mixture from the back surface thereof. Therefore, the template 10 is gradually dissolved or corroded from the back surface thereof, resulting in separation from the semiconductor or dissolution in the flux. When the GaN single crystal 20 is grown to a sufficient thickness, for example, about 500 μm or more, the temperature of the crucible is maintained at 850° C. to 880° C., whereby the entirety of the sapphire substrate 11 is dissolved in the flux mixture.
摘要翻译：在氮（N 2）气氛中，在3.7MPa和870℃下，通过助熔剂法在GaN晶体生长面（GaN层13）上生长GaN单晶20，使用包含Ga，Na和 Li在约870℃。由于模板10的背面是蓝宝石衬底11的R平面，所以模板10容易被腐蚀或溶解在焊剂混合物的背面。因此，模板10从其背面逐渐溶解或腐蚀，导致与半导体的分离或焊剂的溶解。当GaN单晶20生长至足够的厚度，例如约500μm或更大时，坩埚的温度保持在850℃至880℃，从而整个蓝宝石衬底11溶解在助焊剂混合物中。

5. 发明授权

US08216365B2 Method for producing a semiconductor crystal 有权
标题翻译：半导体晶体的制造方法
公开(公告)号：US08216365B2
公开(公告)日：2012-07-10
申请号：US12073178
申请日：2008-02-29
申请人： Seiji Nagai , Shiro Yamazaki , Takayuki Sato , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Seiji Nagai , Shiro Yamazaki , Takayuki Sato , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B25/18
CPC分类号： C30B29/403 , C30B9/00 , C30B9/10
摘要： Objects of the invention are to further enhance crystallinity and crystallinity uniformity of a semiconductor crystal produced through the flux method, and to effectively enhance the production yield of the semiconductor crystal. The c-axis of a seed crystal including a GaN single-crystal layer is aligned in a horizontal direction (y-axis direction), one a-axis of the seed crystal is aligned in the vertical direction, and one m-axis is aligned in the x-axis direction. Thus, three contact points at which a supporting tool contacts the seed crystal are present on m-plane. The supporting tool has two supporting members, which extend in the vertical direction. One supporting member has an end part, which is inclined at 30° with respect to the horizontal plane α. The reasons for supporting a seed crystal at m-plane thereof are that m-plane exhibits a crystal growth rate, which is lower than that of a-plane, and that desired crystal growth on c-plane is not inhibited. Actually, a plurality of seed crystals and supporting tools are periodically placed along the y-axis direction.
摘要翻译：本发明的目的是进一步提高通过助焊剂法生产的半导体晶体的结晶度和结晶度均匀性，并有效提高半导体晶体的制造成品率。包括GaN单晶层的晶种的c轴在水平方向（y轴方向）上排列，晶种的一个a轴在垂直方向上排列，并且一个m轴对齐在x轴方向。因此，在m平面上存在支撑工具与晶种接触的三个接触点。支撑工具具有在垂直方向上延伸的两个支撑构件。一个支撑构件具有相对于水平面α倾斜30°的端部。在m面支撑晶种的原因在于，m面的晶体生长速度低于a面的晶体生长速度，c面上的期望的晶体生长没有被抑制。实际上，沿着y轴方向周期性地放置多个晶种和支撑工具。

6. 发明授权

US07708833B2 Crystal growing apparatus 有权
标题翻译：水晶生长装置
公开(公告)号：US07708833B2
公开(公告)日：2010-05-04
申请号：US12073904
申请日：2008-03-11
申请人： Shiro Yamazaki , Koji Hirata , Takayuki Sato , Seiji Nagai , Katsuhiro Imai , Makoto Iwai , Shuhei Higashihara , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Shiro Yamazaki , Koji Hirata , Takayuki Sato , Seiji Nagai , Katsuhiro Imai , Makoto Iwai , Shuhei Higashihara , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B35/00
CPC分类号： C30B29/403 , C30B9/00 , C30B9/06 , Y10S117/90 , Y10T117/10 , Y10T117/1024
摘要： An object of the invention is to carry out the flux method with improved work efficiency while maintaining the purity of flux at high level and saving flux material cost. The sodium-purifying apparatus includes a sodium-holding-and-management apparatus for maintaining purified sodium (Na) in a liquid state. Liquid sodium is supplied into a sodium-holding-and-management apparatus through a liquid-sodium supply piping maintained at 100° C. to 200° C. The sodium-holding-and-management apparatus further has an argon-gas-purifying apparatus for controlling the condition of argon (Ar) gas that fills the internal space thereof. Thus, by opening and closing a faucet at desired timing, purified liquid sodium (Na) supplied from the sodium-purifying apparatus can be introduced into a crucible as appropriate via the liquid-sodium supply piping, the sodium-holding-and-management apparatus, and the piping.
摘要翻译：本发明的目的是在保持高水平的助焊剂纯度的同时，实现提高工作效率的助焊剂方法，节约焊剂材料成本。钠纯化装置包括用于保持液态的纯化钠（Na）的钠保持和管理装置。液态钠通过保持在100℃至200℃的液态钠供应管道供应到保钠管理装置中。钠保持和管理装置还具有氩气净化装置用于控制填充其内部空间的氩（Ar）气体的状态。因此，通过在期望的时间打开和关闭水龙头，可以通过液体钠供应管道，钠保持管理装置适当地将从钠纯化装置供应的纯化液体钠（Na），和管道。

7. 发明申请

US20090173273A1 Method and Apparatus for Producing Group III Nitride Based Compound Semiconductor 有权
标题翻译：用于生产基于III族氮化物的化合物半导体的方法和装置
公开(公告)号：US20090173273A1
公开(公告)日：2009-07-09
申请号：US12225550
申请日：2007-04-05
申请人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Shiro Yamazaki , Makoto Iwai , Takanao Shimodaira , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： C30B19/00 , C30B19/06
CPC分类号： C30B29/403 , C30B9/00 , Y10S117/90 , Y10T117/10 , Y10T117/1024
摘要： In the flux method, a source nitrogen gas is sufficiently heated before feeding to an Na—Ga mixture.The apparatus of the invention is provided for producing a group III nitride based compound semiconductor The apparatus includes a reactor which maintains a group III metal and a metal differing from the group III metal in a molten state, a heating apparatus for heating the reactor, an outer vessel for accommodating the reactor and the heating apparatus, and a feed pipe for feeding a gas containing at least nitrogen from the outside of the outer vessel into the reactor. The feed pipe has a zone for being heated together with the reactor by means of the heating apparatus, wherein the zone is heated inside the outer vessel and outside the reactor.
摘要翻译：在通量法中，在将氮源充分加热至Na-Ga混合物之前，充分加热。本发明的装置用于制造III族氮化物基化合物半导体该装置包括：在熔融状态下保持III族金属和不同于III族金属的金属的反应器，用于加热反应器的加热装置，用于容纳反应器和加热装置的外部容器，以及用于将从外部容器的外部至少含有氮气的气体进料到反应器中的进料管。进料管具有通过加热装置与反应器一起加热的区域，其中该区域在外部容器内部和反应器外部被加热。

8. 发明申请

US20090106959A1 Group III nitride semiconductor manufacturing system 有权
标题翻译： III族氮化物半导体制造系统
公开(公告)号：US20090106959A1
公开(公告)日：2009-04-30
申请号：US12289257
申请日：2008-10-23
申请人： Shiro Yamazaki , Koji Hirata
发明人： Shiro Yamazaki , Koji Hirata
IPC分类号： H01L21/67
CPC分类号： C30B29/403 , C30B9/10 , Y10T29/41 , Y10T117/10
摘要： The invention provides a group III nitride semiconductor manufacturing system which is free from interruption to rotation of a rotational shaft. The group III nitride semiconductor manufacturing system has a reacting vessel having an opening, a crucible disposed in an interior of the reaction vessel and containing a melt including at least a group III metal and an alkali metal, a holding unit supporting the crucible and having a rotational shaft extending from the interior of the reaction vessel to an exterior of the reaction vessel through the opening, a rotational shaft cover covering a part of the rotational shaft positioned at the exterior of the reacting vessel and connected to the reacting vessel at the opening, a rotational driving unit disposed at an outside of the reacting vessel and regulating the rotational shaft and a supply pipe connected to the rotational shaft cover and supplying a gas including at least nitrogen into a gap between the rotational shaft and the rotational shaft cover, wherein the gas and the melt react to grow a group III nitride semiconductor crystal.
摘要翻译：本发明提供一种不影响旋转轴旋转的III族氮化物半导体制造系统。 III族氮化物半导体制造系统具有开口的反应容器，设置在反应容器的内部并含有至少具有III族金属和碱金属的熔融物的坩埚，支撑坩埚的保持单元，旋转轴通过开口从反应容器的内部延伸到反应容器的外部;旋转轴盖，其覆盖位于反应容器外部并连接到开口处的反应容器的旋转轴的一部分，旋转驱动单元，设置在所述反应容器的外部并调节所述旋转轴;以及供给管，其连接到所述旋转轴盖，并且将至少包含氮的气体供应到所述旋转轴和所述旋转轴盖之间的间隙中，其中，气体和熔体反应以生长III族氮化物半导体晶体。

9. 发明申请

US20070101931A1 Method for producing semiconductor crystal 有权
标题翻译：半导体晶体的制造方法
公开(公告)号：US20070101931A1
公开(公告)日：2007-05-10
申请号：US11590930
申请日：2006-11-01
申请人： Shiro Yamazaki , Koji Hirata , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Yuji Yamada
发明人： Shiro Yamazaki , Koji Hirata , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Masashi Yoshimura , Fumio Kawamura , Yuji Yamada
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B25/00 , C30B9/00 , C30B29/403 , C30B29/406
摘要： The present invention provides a method for producing a Group III nitride compound semiconductor crystal, the semiconductor crystal being grown through the flux method employing a flux. At least a portion of a substrate on which the semiconductor crystal is to be grown is formed of a flux-soluble material. While the semiconductor crystal is grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal is grown. Alternatively, after the semiconductor crystal has been grown on a surface of the substrate, the flux-soluble material is dissolved in the flux from a surface of the substrate that is opposite the surface on which the semiconductor crystal has been grown. The flux-soluble material is formed of silicon. Alternatively, the flux-soluble material or the substrate is formed of a Group III nitride compound semiconductor having a dislocation density higher than that of the semiconductor crystal to be grown.
摘要翻译：本发明提供一种用于制造III族氮化物化合物半导体晶体的方法，该半导体晶体通过使用焊剂的焊剂法生长。待生长半导体晶体的基板的至少一部分由助熔剂材料形成。半导体晶体在衬底的表面上生长时，该助熔剂材料从衬底的与生长半导体晶体的表面相反的表面溶解在焊剂中。或者，在半导体晶体已经在基板的表面上生长之后，从基板的与半导体晶体已经生长的表面相对的表面的助熔剂中溶解助熔剂。助熔剂材料由硅形成。或者，助熔剂材料或衬底由位错密度高于要生长的半导体晶体的位错密度的III族氮化物化合物半导体形成。

10. 发明申请

US20060273324A1 Light-emitting diode and process for producing the same 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：US20060273324A1
公开(公告)日：2006-12-07
申请号：US10566211
申请日：2004-07-26
申请人： Makoto Asai , Shiro Yamazaki , Takahiro Kozawa , Mitsuhisa Narukawa
发明人： Makoto Asai , Shiro Yamazaki , Takahiro Kozawa , Mitsuhisa Narukawa
IPC分类号： H01L21/00 , H01L33/00
CPC分类号： H01L33/20 , H01L24/32 , H01L33/32 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48464 , H01L2224/73265 , H01L2924/10158 , H01L2924/00014 , H01L2924/00
摘要： The back surface of a semiconductor crystal substrate 102 which has a thickness of about 150 μm and is made of undoped GaN bulk crystal consists of a polished plane 102a which is flattened through dry-etching and a grinded plane 102b which is formed in a taper shape and is flattened through dry-etching. On about 10 nm in thickness of GaN n-type clad layer (low carrier concentration layer) 104, about 2 nm in thickness of Al0.005In0.045Ga0.95N well layer 51 and about 18 nm in thickness of Al0.12Ga0.88N barrier layer 52 are deposited alternately as an active layer 105 which emits ultraviolet light and has MQW structure comprising 5 layers in total. Before forming a negative electrode (n-electrode c) on the polished plane of the semiconductor substrate a, the polished plane is dry-etched.
摘要翻译：半导体晶体基板102的背面，其厚度为约150μm，由未掺杂的GaN体晶体制成，其由经干蚀刻而平坦化的抛光平面102a和形成在其中的研磨平面102b 锥形，并通过干蚀刻变平。在GaN n型覆层（低载流子浓度层）104的厚度约为10nm的情况下，厚度为约0.01nm的Al 0.005 In 0.95 Ga 0.95 N阱层51和厚度约为18nm的Al 0.12 N Ga 0.88 N阻挡层52交替地沉积为发射紫外光的有源层105和总共有5层MQW结构。在半导体衬底a的抛光平面上形成负电极（n电极c）之前，对该抛光平面进行干式蚀刻。

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