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1. 发明申请

US20150056791A1 DEPRESSION FILLING METHOD AND PROCESSING APPARATUS 有权
标题翻译：泄漏填充方法和处理装置
公开(公告)号：US20150056791A1
公开(公告)日：2015-02-26
申请号：US14464736
申请日：2014-08-21
申请人： Tokyo Electron Limited
发明人： Satoshi ONODERA , Daisuke SUZUKI , Akinobu KAKIMOTO
IPC分类号： H01L21/02 , C23C16/52 , H01L21/67
CPC分类号： H01L21/67069 , C23C16/045 , C23C16/24 , C23C16/45589 , C23C16/56 , C30B19/00 , C30B29/06 , H01L21/0243 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02592 , H01L21/0262 , H01L21/02658
摘要： A depression filling method for filling a depression of a workpiece including a semiconductor substrate and an insulating film formed on the semiconductor substrate is provided. The depression penetrating the insulating film is configured so as to extend to the semiconductor substrate. The method includes: forming a thin film of a semiconductor material along a wall surface that defines the depression; annealing the workpiece to cause the semiconductor material of the thin film to move toward a bottom of the depression and to form an epitaxial region corresponding to crystals of the semiconductor substrate; and etching the thin film.
摘要翻译：提供了一种用于填充包括形成在半导体衬底上的半导体衬底和绝缘膜的工件的凹陷的凹陷填充方法。穿透绝缘膜的凹陷构造成延伸到半导体衬底。该方法包括：沿着限定凹陷的壁面形成半导体材料薄膜; 对工件进行退火，使薄膜的半导体材料向凹部的底部移动，形成对应于半导体基板的晶体的外延区域; 并蚀刻该薄膜。

2. 发明申请

US20140251203A1 SELECTIVE EPITAXIAL GROWTH METHOD AND FILM FORMING APPARATUS 有权
标题翻译：选择性外源生长方法和薄膜形成装置
公开(公告)号：US20140251203A1
公开(公告)日：2014-09-11
申请号：US14197359
申请日：2014-03-05
申请人： TOKYO ELECTRON LIMITED
发明人： Daisuke SUZUKI , Akinobu KAKIMOTO , Satoshi ONODERA
IPC分类号： C30B25/14
CPC分类号： C30B25/16 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02639
摘要： A selective epitaxial growth method includes preparing a target object including a single crystal substrate in which an epitaxial growth region is partitioned by a suppression film; and growing the epitaxial layer on the epitaxial growth region of the target object until a predetermined film thickness is obtained. The growing the epitaxial layer includes first source gas supply process of supplying a source gas onto the target object under a first pressure to grow a first epitaxial layer on the epitaxial growth region, first removing process of removing deposits on the suppression film, second source gas supply process of supplying the source gas onto the target object under a second pressure higher than the first pressure, and second removing process of removing the deposits on the suppression film. The second source gas supply process and the second removing process are repeated until the predetermined film thickness is obtained.
摘要翻译：选择性外延生长方法包括制备包括单晶衬底的目标物体，其中外延生长区域被抑制膜分隔; 以及在目标物体的外延生长区上生长外延层，直至获得预定的膜厚。生长外延层包括在第一压力下将源气体供应到目标物体上的第一源气体供应过程，以在外延生长区上生长第一外延层，首先去除去除抑制膜上的沉积物的第二原料气体在比第一压力高的第二压力下将源气体供给到目标物体上的供给处理，以及除去抑制膜上的沉积物的第二除去工序。重复第二源气体供给处理和第二除去处理，直到得到规定的膜厚。

3. 发明申请

US20140349468A1 TRENCH FILLING METHOD AND PROCESSING APPARATUS 有权
标题翻译： TRENCH填充方法和加工设备
公开(公告)号：US20140349468A1
公开(公告)日：2014-11-27
申请号：US14285874
申请日：2014-05-23
申请人： TOKYO ELECTRON LIMITED
发明人： Daisuke SUZUKI , Kazuya TAKAHASHI , Mitsuhiro OKADA , Katsuhiko KOMORI , Satoshi ONODERA
IPC分类号： H01L21/02
CPC分类号： H01L21/02532 , H01L21/0245 , H01L21/02502 , H01L21/02592 , H01L21/02645 , H01L21/02667
摘要： The present disclosure provides a method for filling a trench formed on an insulating film of a workpiece. The method includes forming a first impurity-containing amorphous silicon film on a wall surface which defines the trench, forming a second amorphous silicon film on the first amorphous silicon film, and annealing the workpiece after the second amorphous silicon film is formed.
摘要翻译：本公开提供了一种用于填充形成在工件的绝缘膜上的沟槽的方法。该方法包括在限定沟槽的壁表面上形成第一含杂质的非晶硅膜，在第一非晶硅膜上形成第二非晶硅膜，并在形成第二非晶硅膜之后退火工件。

4. 发明公开

US20240175122A1 FILM FORMING METHOD AND FILM FORMING APPARATUS 审中-公开
公开(公告)号：US20240175122A1
公开(公告)日：2024-05-30
申请号：US18518810
申请日：2023-11-24
申请人： Tokyo Electron Limited
发明人： Satoshi ONODERA , Yamato TONEGAWA , Jun OGAWA
IPC分类号： C23C16/36 , C23C16/56
CPC分类号： C23C16/36 , C23C16/56
摘要： A film forming method includes a) supplying raw material gas to a substrate, thereby adsorbing the raw material gas to the substrate, the raw material gas having, in a molecule thereof, a cyclic structure including a silicon atom and a carbon atom, b) thermally treating the substrate in an atmosphere including nitriding gas, thereby thermally nitriding the raw material gas adsorbed to the substrate, and c) exposing the substrate to a hydrogen plasma, thereby reforming the thermally nitrided raw material gas.

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