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1. 发明公开

US20230395371A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 审中-公开
公开(公告)号：US20230395371A1
公开(公告)日：2023-12-07
申请号：US18315066
申请日：2023-05-10
申请人： Tokyo Electron Limited
发明人： Kazumasa IGARASHI , Jun OGAWA , Yuki TANAKA
IPC分类号： H01L21/02 , H01L21/3115 , H01L21/67 , H01J37/32
CPC分类号： H01L21/02321 , H01L21/3115 , H01L21/0234 , H01L21/67109 , H01L21/67017 , H01J37/32449 , H01J2237/2001 , H01J2237/338
摘要： A substrate processing method includes housing, in a processing container, a substrate having an insulating film on a surface of the substrate; exposing the insulating film to plasma generated from a gas including deuterium gas in a state where the substrate housed in the processing container is maintained at a first temperature, to introduce deuterium into the insulating film; and heat-treating the insulating film without exposing the insulating film to the plasma in a state where the substrate housed in the processing container is controlled to be at a second temperature that is different from the first temperature, to adjust concentration of the deuterium introduced into the insulating film.

2. 发明申请

US20220328301A1 FILM DEPOSITION APPARATUS FOR FINE PATTERN FORMING 有权
公开(公告)号：US20220328301A1
公开(公告)日：2022-10-13
申请号：US17808375
申请日：2022-06-23
申请人： Tokyo Electron Limited
发明人： Kazuhide HASEBE , Shigeru NAKAJIMA , Jun OGAWA , Hiroki MURAKAMI
IPC分类号： H01L21/027 , C23C16/02 , C23C16/40 , C23C16/455 , H01L21/02 , H01L21/033 , H01L21/311 , H01L21/3213 , H01L21/768 , H01J37/32 , G03F7/40
摘要： In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.

3. 发明申请

US20180033618A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 审中-公开
公开(公告)号：US20180033618A1
公开(公告)日：2018-02-01
申请号：US15660563
申请日：2017-07-26
申请人： TOKYO ELECTRON LIMITED
发明人： Jun OGAWA , Kazuo YABE
IPC分类号： H01L21/02 , H01J37/32 , H01J37/20 , H01L21/311
CPC分类号： H01L21/02315 , C23C16/345 , C23C16/402 , C23C16/452 , C23C16/45542 , C23C16/45546 , C23C16/45578 , C23C16/4583 , C23C16/4586 , C23C16/509 , H01J37/20 , H01J37/32009 , H01J37/32532 , H01J2237/038 , H01L21/02164 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/31116
摘要： A substrate processing apparatus includes: a protrusion portion formed by a side peripheral wall of a processing container which swells outward, and configured to form a vertically elongated space communicating with a processing space for accommodating a substrate holder and performing a process; a gas discharge portion provided in the vertically elongated space, and configured to discharge a process gas into the processing space; an antenna provided in the protrusion portion along a vertical direction and supplied with a high-frequency power for converting the process gas into a plasma in the vertically elongated space; and a shield extending leftward and rightward in the protrusion portion at positions closer to the processing space than the antenna and configured to shield an electric field formed by the antenna and to suppress a formation of the plasma in the processing space.

4. 发明申请

US20170218517A1 METHOD OF FORMING NITRIDE FILM 审中-公开
公开(公告)号：US20170218517A1
公开(公告)日：2017-08-03
申请号：US15420322
申请日：2017-01-31
申请人： TOKYO ELECTRON LIMITED
发明人： Noriaki FUKIAGE , Takayuki KARAKAWA , Akihiro KURIBAYASHI , Takeshi OYAMA , Jun OGAWA
IPC分类号： C23C16/511 , C23C16/34 , C23C16/455
CPC分类号： C23C16/345 , C23C16/045 , C23C16/45536 , H01J37/32192 , H01J37/32449
摘要： A method of forming a nitride film in a fine recess formed in a surface of a substrate to be processed, by repeating a process, which includes adsorbing a film forming raw material gas onto the substrate and nitriding the adsorbed film forming raw material gas. The nitriding the adsorbed film forming raw material gas includes converting a NH3 gas as a nitriding gas, and an adsorption inhibiting gas for inhibiting adsorption of the NH3 gas into radicals and supplying the radicals onto the substrate.

5. 发明申请

US20150107517A1 Plasma Processing Apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US20150107517A1
公开(公告)日：2015-04-23
申请号：US14518151
申请日：2014-10-20
申请人： TOKYO ELECTRON LIMITED
发明人： Kazuhide HASEBE , Jun OGAWA , Akira SHIMIZU
IPC分类号： C23C16/455 , C23C16/509
CPC分类号： C23C16/45582 , C23C16/452 , C23C16/45523 , C23C16/45578 , H01J37/32091 , H01J37/3244 , H01J37/32568
摘要： A plasma processing apparatus includes a plasma generation chamber in which plasma active species are generated, a process chamber configured to accommodate processing target objects stacked in a vertical direction, the plasma active species generated in the plasma generation chamber being supplied into the process chamber, a plasma source gas supply pipe disposed inside the plasma generation chamber and extending in the vertical direction, a plasma source gas being introduced from one end of the plasma source gas supply pipe and discharged through gas discharge holes formed in the plasma source gas supply pipe in the vertical direction, and a pair of plasma electrodes, arranged to face each other, configured to apply an electric field to the plasma source gas discharged into the plasma generation chamber. A size of a discharge area interposed between the pair of plasma electrodes is varied in the vertical direction.
摘要翻译：一种等离子体处理装置包括：等离子体生成室，其中产生等离子体活性物质;处理室，被配置为容纳沿垂直方向堆叠的处理目标物体;等离子体产生室中产生的等离子体活性物质被供给到处理室; 等离子体源气体供给管，其设置在等离子体产生室的内部并沿垂直方向延伸，等离子体源气体从等离子体源气体供给管的一端引入，并通过形成在等离子体源气体供给管中的气体排出孔排出以及一对等离子体电极，被配置为对排放到等离子体产生室中的等离子体源气体施加电场。放置在一对等离子体电极之间的放电区域的尺寸在垂直方向上变化。

6. 发明申请

US20200299835A1 CLEANING METHOD OF DEPOSITION APPARATUS 审中-公开
公开(公告)号：US20200299835A1
公开(公告)日：2020-09-24
申请号：US16815181
申请日：2020-03-11
申请人： Tokyo Electron Limited
发明人： Jun OGAWA , Hiroyuki WADA , Akihiro KURIBAYASHI , Takeshi OYAMA
IPC分类号： C23C16/44 , C23C16/34
摘要： A method of cleaning a deposition apparatus is provided. The method includes cleaning, with a cleaning gas formed into a plasma, an interior of a processing vessel on which a silicon nitride film is deposited. The cleaning gas includes a fluorine-containing gas and oxygen gas.

7. 发明申请

US20180355479A1 FILM FORMING APPARATUS, METHOD OF CLEANING FILM FORMING APPARATUS, AND STORAGE MEDIUM 审中-公开
公开(公告)号：US20180355479A1
公开(公告)日：2018-12-13
申请号：US16001556
申请日：2018-06-06
申请人： TOKYO ELECTRON LIMITED
发明人： Takayuki KARAKAWA , Jun OGAWA , Noriaki FUKIAGE , Yasuo KOBAYASHI
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , H01L21/02 , H01L21/67
CPC分类号： C23C16/4405 , C23C16/45536 , C23C16/45544 , C23C16/4584 , H01L21/0217 , H01L21/0228 , H01L21/67028
摘要： A film forming apparatus is provided for forming a film by revolving a substrate placed on a rotary table in a vacuum container, alternately supplying a precursor gas and a reaction gas that reacts with the precursor gas to generate a reaction product multiple times, and depositing the reaction product on the substrate. The film forming apparatus comprises a precursor gas supply region that supplies the precursor gas onto the substrate, one or more plasma generation regions that generate plasma at a position apart from the precursor gas supply region in a rotational direction of the rotary table, and a cleaning region that cleans the rotary table by supplying a cleaning gas onto the rotary table in a region apart from the plasma generation regions and the precursor gas supply region in the rotational direction when a film forming process is not performed on the substrate.

8. 发明申请

US20180237914A1 FILM FORMING APPARATUS 审中-公开
公开(公告)号：US20180237914A1
公开(公告)日：2018-08-23
申请号：US15897209
申请日：2018-02-15
申请人： TOKYO ELECTRON LIMITED
发明人： Jun OGAWA , Noriaki FUKIAGE , Shimon OTSUKI , Muneyuki OTANI , Kentaro OSHIMO , Hideomi HANE
IPC分类号： C23C16/455 , C23C16/513 , C23C16/458 , H01L21/02 , H01L21/67 , H01L21/687
CPC分类号： C23C16/45544 , C23C16/45542 , C23C16/45551 , C23C16/45578 , C23C16/4584 , C23C16/511 , C23C16/513 , H01J37/32192 , H01J37/32229 , H01J37/32449 , H01J37/32513 , H01J37/32724 , H01J37/32752 , H01J37/32899 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/67017 , H01L21/68764 , H01L21/68771
摘要： An apparatus for forming a nitride film of a raw material component on a substrate, includes: a raw material gas supply part having discharge ports that discharge a raw material gas and a purge gas, and an exhaust port; a reaction region spaced apart from the raw material gas supply part in a circumferential direction of a rotary table; a modification region spaced apart from the reaction region in the circumferential direction and in which the nitride film is modified with a hydrogen gas; a first plasma generating part provided in the modification region and a second plasma generating part provided in the reaction region, and for activating a gas existing in each of the modification and reaction regions; a reaction gas supply part for supplying the ammonia gas to the reaction region; and an exhaust port that evacuates an interior of the vacuum vessel.

9. 发明申请

US20180037992A1 SILICON NITRIDE FILM FORMING METHOD AND SILICON NITRIDE FILM FORMING APPARATUS 审中-公开
公开(公告)号：US20180037992A1
公开(公告)日：2018-02-08
申请号：US15669444
申请日：2017-08-04
申请人： TOKYO ELECTRON LIMITED
发明人： Noriaki FUKIAGE , Takeshi OYAMA , Jun OGAWA
IPC分类号： C23C16/455 , C23C16/52 , C23C16/34 , H01L21/02 , H01L21/687
CPC分类号： C23C16/45529 , C23C16/345 , C23C16/45536 , C23C16/45542 , C23C16/45551 , C23C16/52 , H01L21/0217 , H01L21/02186 , H01L21/02274 , H01L21/0228 , H01L21/68764 , H01L21/68771
摘要： A silicon nitride film forming method for forming a silicon nitride film on a substrate to be processed, includes forming a silicon nitride film doped with a predetermined amount of titanium by repeating, a predetermined number of times, forming a silicon nitride film by repeating, a first number of times, a process of causing a silicon source gas to be adsorbed onto the substrate and a process of nitriding the adsorbed silicon source gas with plasma of a nitriding gas, and forming a titanium nitride film by repeating, a second number of times, a process of causing a titanium source gas containing chlorine to be adsorbed onto the substrate and a process of nitriding the adsorbed titanium source gas with the plasma of the nitriding gas.

10. 发明申请

US20130213301A1 MASK PATTERN FORMING METHOD, FINE PATTERN FORMING METHOD, AND FILM DEPOSITION APPARATUS 审中-公开
标题翻译：掩模图形成方法，精细图案形成方法和薄膜沉积装置
公开(公告)号：US20130213301A1
公开(公告)日：2013-08-22
申请号：US13848849
申请日：2013-03-22
申请人： TOKYO ELECTRON LIMITED
发明人： Kazuhide HASEBE , Shigeru NAKAJIMA , Jun OGAWA , Hiroki MURAKAMI
IPC分类号： H01L21/027
CPC分类号： H01L21/027 , C23C16/02 , C23C16/402 , C23C16/403 , C23C16/45536 , G03F7/40 , H01L21/02164 , H01L21/02178 , H01L21/02219 , H01L21/02274 , H01L21/0228 , H01L21/0274 , H01L21/0337 , H01L21/0338 , H01L21/31138 , H01L21/31144 , H01L21/31608 , H01L21/31616 , H01L21/32139 , H01L21/76816
摘要： In a mask pattern forming method, a resist film is formed over a thin film, the resist film is processed into resist patterns having a predetermined pitch by photolithography, slimming of the resist patterns is performed, and an oxide film is formed on the thin film and the resist patterns after an end of the slimming step in a film deposition apparatus by supplying a source gas and an oxygen radical or an oxygen-containing gas. In the mask pattern forming method, the slimming and the oxide film forming are continuously performed in the film deposition apparatus.
摘要翻译：在掩模图案形成方法中，在薄膜上形成抗蚀剂膜，通过光刻将抗蚀剂膜加工成具有预定间距的抗蚀剂图案，进行抗蚀剂图案的减薄，并且在薄膜上形成氧化膜以及通过供给源气体和氧自由基或含氧气体在成膜装置中减肥步骤结束后的抗蚀剂图案。在掩模图案形成方法中，在成膜装置中连续进行纤维化和氧化膜形成。

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