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1. 发明申请

US20080023704A1 Display Device and Fabrication Method Thereof 审中-公开
标题翻译：显示装置及其制作方法
公开(公告)号：US20080023704A1
公开(公告)日：2008-01-31
申请号：US11782701
申请日：2007-07-25
申请人： TAKESHI NODA , Takahiro Kamo , Eiji Oue , Mutsuko Hatano , Takeshi Sato
发明人： TAKESHI NODA , Takahiro Kamo , Eiji Oue , Mutsuko Hatano , Takeshi Sato
IPC分类号： H01L29/04 , H01L21/00
CPC分类号： H01L29/04 , H01L21/02532 , H01L21/02683 , H01L21/02691 , H01L27/1248 , H01L27/1285
摘要： The present invention obtains a system-in-panel display device using a high-performance thin film transistor by suppressing aggregation of a molten semiconductor at the time of allowing strip-like pseudo-single crystal to grow continuously with a direction control by radiating beams of continuous oscillation laser to a semiconductor film made of silicon while scanning. A display device includes a silicon nitride film formed on the insulation substrate, a silicon oxide film formed on the silicon nitride film, a semiconductor film formed on the silicon oxide film, and a thin film transistor which uses the semiconductor film. Here, the silicon oxide film is constituted of a first silicon oxide film formed using SiH4 and N2O as raw material gases and a second silicon oxide film formed using a TEOS gas as a raw material gas, and the semiconductor film is made of pseudo-single crystal having strip-like grains.
摘要翻译：本发明通过抑制带状伪单晶在通过辐射光束的方向控制而连续生长时，通过抑制熔融半导体的聚集来获得使用高性能薄膜晶体管的面板内系统显示装置在扫描时对由硅制成的半导体膜进行连续振荡激光。显示装置包括形成在绝缘基板上的氮化硅膜，形成在氮化硅膜上的氧化硅膜，形成在氧化硅膜上的半导体膜，以及使用该半导体膜的薄膜晶体管。这里，氧化硅膜由使用SiH 4 N 2和N 2 O作为原料气体形成的第一氧化硅膜和使用TEOS形成的第二氧化硅膜构成气体作为原料气体，半导体膜由具有带状粒子的假单晶构成。

2. 发明申请

US20080176351A1 MANUFACTURING METHOD OF DISPLAY DEVICE 审中-公开
标题翻译：显示装置的制造方法
公开(公告)号：US20080176351A1
公开(公告)日：2008-07-24
申请号：US11843693
申请日：2007-08-23
申请人： Hideaki Shimmoto , Takahiro Kamo , Takeshi Noda , Takuo Kaitoh , Eiji Oue
发明人： Hideaki Shimmoto , Takahiro Kamo , Takeshi Noda , Takuo Kaitoh , Eiji Oue
IPC分类号： H01L21/00
CPC分类号： H01L21/02678 , H01L21/02683 , H01L21/02686 , H01L21/02691 , H01L27/1285 , H01L29/04
摘要： The present invention provides a manufacturing method of a display device which can prevent the reduction of a size of a pseudo single-crystalline region having strip-like crystals in forming such a pseudo single-crystalline silicon region on a substrate. A step for forming pseudo single crystals having strip-like crystals on a preset region of a semiconductor film formed on a substrate includes a step for forming the pseudo single crystal by radiating an energy beam to a first region of the semiconductor film while moving a radiation position of the energy beam in a first direction, and a step for forming the pseudo single crystal by radiating the energy beam to a second region of the semiconductor film while moving a radiation position of the energy beam in a second direction opposite to the first direction. The first region and the second region set sizes thereof at a position where the radiation of the energy beam is finished smaller than sizes thereof at a position where the radiation of the energy beam is started. The second region includes a portion where the second region overlaps the first region and a portion where the second region does not overlap the first region.
摘要翻译：本发明提供一种显示装置的制造方法，其可以防止在基板上形成这样的假单晶硅区域时具有带状晶体的伪单晶区域的尺寸的减小。在形成在衬底上的半导体膜的预设区域上形成具有带状晶体的伪单晶的步骤包括：通过在移动辐射的同时将能量束照射到半导体膜的第一区域来形成伪单晶的步骤能量束在第一方向的位置，以及通过在与第一方向相反的第二方向移动能量束的辐射位置的同时将能量束照射到半导体膜的第二区域来形成伪单晶的步骤。第一区域和第二区域在能量束的辐射被完成的位置处的尺寸设定为小于能量束的辐射开始的位置处的尺寸。第二区域包括第二区域与第一区域重叠的部分和第二区域与第一区域不重叠的部分。

3. 发明授权

US07619251B2 Laser crystallization method suppressing propagation of cracks forming a display device 有权
标题翻译：抑制形成显示装置的裂纹扩散的激光结晶化方法
公开(公告)号：US07619251B2
公开(公告)日：2009-11-17
申请号：US11440180
申请日：2006-05-25
申请人： Takeshi Sato , Takahiro Kamo , Takeshi Noda
发明人： Takeshi Sato , Takahiro Kamo , Takeshi Noda
IPC分类号： H01L29/04 , H01L31/036 , H01L21/84 , H01L21/36
CPC分类号： H01L21/02667 , H01L21/02422 , H01L21/02532 , H01L21/02683 , H01L21/2026 , H01L27/1285 , H01L29/78603
摘要： A method of irradiating at least a part of a semiconductor film on the substrate with a CW or pseudo-CW laser beam so as to grow crystals laterally. A region over the semiconductor film having Si as a chief component is provided with a pixel region, a gate line driving circuit region and a signal line driving circuit region for driving pixels, and a terminal region where connection terminals will be formed. The region not irradiated with the CW laser beam is provided in a peripheral portion of each semiconductor device corresponding to the position where the glass substrate will be cut. Due to this means, it is possible to suppress occurrence of a failure caused by propagation of cracks when the substrate is cut.
摘要翻译：用CW或者伪CW激光束在基片上照射半导体膜的至少一部分以横向生长晶体的方法。具有Si作为主要成分的半导体膜上的区域设置有用于驱动像素的像素区域，栅极线驱动电路区域和信号线驱动电路区域以及将形成连接端子的端子区域。没有照射CW激光束的区域设置在对应于玻璃基板被切割的位置的每个半导体器件的周边部分中。由于这种方式，可以抑制当切割基板时由于裂纹的传播引起的故障的发生。

4. 发明申请

US20060270130A1 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060270130A1
公开(公告)日：2006-11-30
申请号：US11440180
申请日：2006-05-25
申请人： Takeshi Sato , Takahiro Kamo , Takeshi Noda
发明人： Takeshi Sato , Takahiro Kamo , Takeshi Noda
IPC分类号： H01L21/84 , H01L29/76
CPC分类号： H01L21/02667 , H01L21/02422 , H01L21/02532 , H01L21/02683 , H01L21/2026 , H01L27/1285 , H01L29/78603
摘要： Regions serving as semiconductor devices on a substrate GLS are separated by a substrate cutting position CUT. Each region is provided with a pixel region PXD, a gate line driving circuit region GCR and a signal line driving circuit region DCR for driving pixels, and a terminal region ELD where connection terminals will be formed. TFTs using a polycrystalline Si film not irradiated with a CW laser beam is formed in the pixel region PXD and the gate line driving circuit region GCR. A region CWD irradiated with the CW laser beam is formed in a part of the signal line driving circuit region DCR, and TFTs using a polycrystalline Si film made of crystals grown laterally are formed. A region UCW not irradiated with the CW laser beam is provided in the substrate cutting position CUT. The substrate GLS excluding the vicinities of the substrate cutting position CUT is irradiated with the CW laser beam. Tensile stress of the substrate surface near the substrate cutting position CUT is lower than tensile stress of the substrate surface in the region CWD so that cracks caused by substrate cutting is suppressed. Thus, it is possible to prevent cracks from occurring at the time of cutting a glass substrate having a semiconductor film crystallized by a CW laser beam.
摘要翻译：在衬底GLS上用作半导体器件的区域被衬底切割位置CUT隔开。每个区域设置有像素区域PXD，栅极线驱动电路区域GCR和用于驱动像素的信号线驱动电路区域DCR以及将形成连接端子的端子区域ELD。在像素区域PXD和栅极线驱动电路区域GCR中形成使用未被CW激光束照射的多晶Si膜的TFT。在信号线驱动电路区域DCR的一部分中形成用CW激光束照射的区域CWD，并且形成使用由横向生长的晶体制成的多晶Si膜的TFT。在基板切断位置CUT中设置没有用CW激光束照射的区域UCW。用CW激光束照射除基板切断位置CUT附近的基板GLS。衬底切割位置CUT附近的衬底表面的拉伸应力低于区域CWD中的衬底表面的拉伸应力，从而抑制由衬底切割引起的裂纹。因此，可以防止在切割具有通过CW激光束结晶的半导体膜的玻璃基板时发生裂纹。

5. 发明申请

US20080296583A1 Display Device And Manufacturing Method of The Same 审中-公开
标题翻译：显示器件及其制造方法
公开(公告)号：US20080296583A1
公开(公告)日：2008-12-04
申请号：US12185292
申请日：2008-08-04
申请人： Takuo Kaitoh , Eiji Oue , Takahiro Kamo , Yasukazu Kimura , Toshihiko Itoga
发明人： Takuo Kaitoh , Eiji Oue , Takahiro Kamo , Yasukazu Kimura , Toshihiko Itoga
IPC分类号： H01L33/00
CPC分类号： G02F1/136213 , G02F1/1368 , H01L27/1255 , H01L27/1288
摘要： A display device includes a capacitive element configured so that a portion of a semiconductor layer which is made conductive constitutes one electrode, an insulation film which covers the semiconductor layer constitutes a dielectric film, and a conductive layer which includes a portion which is formed over the insulation film and is overlapped to the one electrode constitutes another electrode. The conductive layer has an extension portion which extends outside of a region where the semiconductor layer is formed from the inside of the region where the semiconductor layer is formed, and is formed over the insulation film. The insulation film has, in a region where the insulation film is overlapped to both the semiconductor layer and the extension portion of the conductive layer, a film thickness which is larger than a film thickness at a portion thereof which is overlapped to the one electrode.
摘要翻译：显示装置包括电容元件，其被配置为使得导电的半导体层的一部分构成一个电极，覆盖半导体层的绝缘膜构成电介质膜，以及导电层，其包括形成在该电极上的部分绝缘膜与一个电极重叠构成另一个电极。导电层具有从形成有半导体层的区域的内部延伸到形成有半导体层的区域的外侧的延伸部，并形成在绝缘膜的上方。绝缘膜在绝缘膜与导电层的半导体层和延伸部分重叠的区域中具有比在与一个电极重叠的部分处的膜厚度大的膜厚度。

6. 发明申请

US20050211983A1 Display device and manufacturing method of the same 有权
标题翻译：显示装置及其制造方法相同
公开(公告)号：US20050211983A1
公开(公告)日：2005-09-29
申请号：US11077255
申请日：2005-03-11
申请人： Takuo Kaitoh , Eiji Oue , Takahiro Kamo , Yasukazu Kimura , Toshihiko Itoga
发明人： Takuo Kaitoh , Eiji Oue , Takahiro Kamo , Yasukazu Kimura , Toshihiko Itoga
IPC分类号： G02F1/1343 , G02F1/133 , G02F1/1362 , G02F1/1368 , G09F9/00 , G09F9/30 , H01L21/00 , H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L27/13 , H01L29/786
CPC分类号： G02F1/136213 , G02F1/1368 , H01L27/1255 , H01L27/1288
摘要： The invention provides a method of manufacture of a display device which can achieve a reduction of the manufacturing process. In the manufacturing method, a semiconductor layer is formed over an upper surface of a substrate. An insulation film is formed over an upper surface of the semiconductor layer. Using a mask which covers a first region and exposes a second region, an implantation of impurities into the semiconductor layer is performed in the second region through the insulation film. After the mask is removed, a surface of the insulation film is etched in the first region and the second region to an extent that the insulation film in the second region remains, whereby the film thickness of the insulation film in the second region is set to be smaller than the film thickness of the insulation film in the first region.
摘要翻译：本发明提供一种能够实现制造过程减少的显示装置的制造方法。在制造方法中，在衬底的上表面上形成半导体层。在半导体层的上表面上形成绝缘膜。使用覆盖第一区域并露出第二区域的掩模，通过绝缘膜在第二区域中进行杂质注入到半导体层中。在去除掩模之后，在第一区域和第二区域中蚀刻绝缘膜的表面至第二区域中的绝缘膜残留的程度，从而将第二区域中的绝缘膜的膜厚度设定为小于第一区域中的绝缘膜的膜厚度。

7. 发明授权

US07407853B2 Display device and manufacturing method of the same 有权
标题翻译：显示装置及其制造方法相同
公开(公告)号：US07407853B2
公开(公告)日：2008-08-05
申请号：US11077255
申请日：2005-03-11
申请人： Takuo Kaitoh , Eiji Oue , Takahiro Kamo , Yasukazu Kimura , Toshihiko Itoga
发明人： Takuo Kaitoh , Eiji Oue , Takahiro Kamo , Yasukazu Kimura , Toshihiko Itoga
IPC分类号： H01L21/8242
CPC分类号： G02F1/136213 , G02F1/1368 , H01L27/1255 , H01L27/1288
摘要： The invention provides a method of manufacture of a display device which can achieve a reduction of the manufacturing process. In the manufacturing method, a semiconductor layer is formed over an upper surface of a substrate. An insulation film is formed over an upper surface of the semiconductor layer. Using a mask which covers a first region and exposes a second region, an implantation of impurities into the semiconductor layer is performed in the second region through the insulation film. After the mask is removed, a surface of the insulation film is etched in the first region and the second region to an extent that the insulation film in the second region remains, whereby the film thickness of the insulation film in the second region is set to be smaller than the film thickness of the insulation film in the first region.
摘要翻译：本发明提供一种能够实现制造过程减少的显示装置的制造方法。在制造方法中，在衬底的上表面上形成半导体层。在半导体层的上表面上形成绝缘膜。使用覆盖第一区域并露出第二区域的掩模，通过绝缘膜在第二区域中进行杂质注入到半导体层中。在去除掩模之后，在第一区域和第二区域中蚀刻绝缘膜的表面至第二区域中的绝缘膜残留的程度，从而将第二区域中的绝缘膜的膜厚度设定为小于第一区域中的绝缘膜的膜厚度。

8. 发明申请

US20080173871A1 Display Device and Manufacturing Method of Display Device 审中-公开
标题翻译：显示设备的显示设备和制造方法
公开(公告)号：US20080173871A1
公开(公告)日：2008-07-24
申请号：US11939073
申请日：2007-11-13
申请人： Takeshi Noda , Takahiro Kamo , Hideaki Shimmoto
发明人： Takeshi Noda , Takahiro Kamo , Hideaki Shimmoto
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L27/1259 , H01L27/1214 , H01L29/04 , H01L29/42384 , H01L29/4908
摘要： In a display device which includes MIS transistors having semiconductor layers thereof formed of an amorphous semiconductor and MIS transistors having semiconductor layers thereof including a polycrystalline semiconductor, the present invention can enhance crystallinity of the semiconductor layers formed of the polycrystalline semiconductor when the respective MIS transistors adopt the bottom gate structure. In the display device, first MIS transistors formed in a first region of a substrate and second MIS transistors formed in a second region different from the first region respectively have a gate electrode thereof between the substrate and the semiconductor layer, the first MIS transistor has the semiconductor layer thereof formed of only the amorphous semiconductor, the second MIS transistor has the semiconductor layer thereof including the polycrystalline semiconductor, and a gate electrode of the second MIS transistor has a thickness smaller than a thickness of a gate electrode of the first MIS transistor.
摘要翻译：在包括由非晶半导体形成的半导体层的MIS晶体管的显示装置和具有包含多晶半导体的半导体层的MIS晶体管的本发明中，当各个MIS晶体管采用时，本发明可提高由多晶半导体形成的半导体层的结晶度底栅结构。在显示装置中，形成在基板的第一区域的第一MIS晶体管和形成在与第一区域不同的第二区域的第二MIS晶体管分别在基板和半导体层之间具有栅电极，第一MIS晶体管具有半导体层仅由非晶半导体形成，第二MIS晶体管的半导体层包括多晶半导体，第二MIS晶体管的栅电极的厚度小于第一MIS晶体管的栅电极的厚度。

9. 发明申请

US20090230397A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20090230397A1
公开(公告)日：2009-09-17
申请号：US12405396
申请日：2009-03-17
申请人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takahiro Kamo
发明人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takahiro Kamo
IPC分类号： H01L27/12 , H01L21/77
CPC分类号： H01L27/1251 , H01L27/1229 , H01L27/1285
摘要： A display device includes a TFT substrate in which a plurality of first TFT elements each having an active layer of an amorphous semiconductor and a plurality of second TFT elements each having an active layer of a polycrystalline semiconductor are disposed on a surface of an insulating substrate, wherein the first TFT element and the second TFT element each have a structure with a gate electrode, a gate insulating film, and the active layer stacked in this order on the surface of the insulating substrate and a source electrode and a drain electrode both connected to the active layer via a contact layer above the active layer, and the active layer of the second TFT element has a thickness of more than 60 nm in a position where the contact layer is stacked.
摘要翻译：显示装置包括TFT基板，其中在绝缘基板的表面上设置有多个具有非晶半导体的有源层的第一TFT元件和多个具有多晶半导体的有源层的第二TFT元件，其中所述第一TFT元件和所述第二TFT元件各自具有在所述绝缘基板的表面上依次堆叠的栅电极，栅极绝缘膜和所述有源层的结构，以及源电极和漏电极都连接到通过有源层上方的接触层的有源层和第二TFT元件的有源层在接触层堆叠的位置具有大于60nm的厚度。

10. 发明授权

US08421940B2 Display device and manufacturing method thereof 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US08421940B2
公开(公告)日：2013-04-16
申请号：US12405396
申请日：2009-03-17
申请人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takahiro Kamo
发明人： Takeshi Noda , Takuo Kaitoh , Hidekazu Miyake , Takahiro Kamo
IPC分类号： G02F1/136
CPC分类号： H01L27/1251 , H01L27/1229 , H01L27/1285
摘要： A display device includes a TFT substrate in which a plurality of first TFT elements each having an active layer of an amorphous semiconductor and a plurality of second TFT elements each having an active layer of a polycrystalline semiconductor are disposed on a surface of an insulating substrate, wherein the first TFT element and the second TFT element each have a structure with a gate electrode, a gate insulating film, and the active layer stacked in this order on the surface of the insulating substrate and a source electrode and a drain electrode both connected to the active layer via a contact layer above the active layer, and the active layer of the second TFT element has a thickness of more than 60 nm in a position where the contact layer is stacked.
摘要翻译：显示装置包括TFT基板，其中在绝缘基板的表面上设置有多个具有非晶半导体的有源层的第一TFT元件和多个具有多晶半导体的有源层的第二TFT元件，其中所述第一TFT元件和所述第二TFT元件各自具有在所述绝缘基板的表面上依次堆叠的栅电极，栅极绝缘膜和所述有源层的结构，以及源电极和漏电极都连接到通过有源层上方的接触层的有源层和第二TFT元件的有源层在接触层堆叠的位置具有大于60nm的厚度。

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