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1. 发明申请

US20060147813A1 Mask and method to pattern chromeless phase lithography contact hole 有权
标题翻译：掩模和方法来绘制无铬相光刻接触孔
公开(公告)号：US20060147813A1
公开(公告)日：2006-07-06
申请号：US11028421
申请日：2005-01-03
申请人： Sya Tan , Soon Tan , Qun Lin , Hury Chong , Liang Hsia
发明人： Sya Tan , Soon Tan , Qun Lin , Hury Chong , Liang Hsia
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/34
摘要： A chromeless phase shift mask and Method for making and using. The A chromeless phase shift mask is used to pattern contact holes. The chromeless phase shift mask preferably comprises: a first phase shift region and a second phase shfit region; the first region is comprised of a unit cell which is comprised of a rectangular center section and at least three rectangular sections (legs) outwards extending from the rectangular center section. The second region is adjacent to said first region. The interference between the first and second phase shift regions creates a contact hole pattern.
摘要翻译：无色相移掩模和制造和使用方法。 A无铬相移掩模用于对接触孔进行图案化。无铬相移掩模优选地包括：第一相移区域和第二相位区域; 第一区域包括由矩形中心部分和从矩形中心部分向外延伸的至少三个矩形部分（腿）的单元电池。第二区域与所述第一区域相邻。第一和第二相移区域之间的干涉产生接触孔图案。

2. 发明申请

US20060105520A1 Structure and method to fabricate a protective sidewall liner for an optical mask 审中-公开
标题翻译：用于制造光学掩模的保护侧壁衬里的结构和方法
公开(公告)号：US20060105520A1
公开(公告)日：2006-05-18
申请号：US10992447
申请日：2004-11-18
申请人： Sia Tan , Qun Lin , Liang Hsia
发明人： Sia Tan , Qun Lin , Liang Hsia
IPC分类号： H01L21/8242
CPC分类号： G03F1/30
摘要： Methods and structures for optical masks that have a liner on the trench sidewalls. An example embodiment comprises a mask structure for use with light at a wavelength comprising: a substrate having a first region, a second region and a third region; a first trench in the first region; a first region having a first thickness of a first material, the first material having a first amount of transmission of light at the wavelength, the second region having a second thickness of the first material, such that the second thickness is greater than the first thickness by a first difference, the first difference being equivalent to a phase shift of 180 degrees at the wavelength, and a third region located on the substrate, the third region having a third thickness of the first material, such that the third thickness is equal to or greater than the second thickness; a liner on the sidewalls of the trench. The liner reduces the reflections from the trench sidewall. The embodiments can be used with single and double phase shift masks and with chromeless phase lithography masks.
摘要翻译：在沟槽侧壁上具有衬垫的光学掩模的方法和结构。示例性实施例包括用于波长为的光的掩模结构，包括：具有第一区域，第二区域和第三区域的衬底; 第一个区域的第一个沟槽; 具有第一材料的第一厚度的第一区域，所述第一材料具有在所述波长处的第一光透射量，所述第二区域具有所述第一材料的第二厚度，使得所述第二厚度大于所述第一厚度通过第一差异，第一差异等于在波长处180度的相移，以及位于基板上的第三区域，第三区域具有第一材料的第三厚度，使得第三厚度等于或大于第二厚度; 在沟槽的侧壁上的衬垫。衬垫减少了从沟槽侧壁的反射。这些实施例可以用于单相和双相位掩模和无铬相光刻掩模。

3. 发明申请

US20050058912A1 Half tone alternating phase shift masks 失效
标题翻译：半色调交替相移掩模
公开(公告)号：US20050058912A1
公开(公告)日：2005-03-17
申请号：US10661048
申请日：2003-09-13
申请人： Qun Lin , Sia Tan , Soon Tan , Huey Chong
发明人： Qun Lin , Sia Tan , Soon Tan , Huey Chong
IPC分类号： G03F1/00 , G03F9/00
CPC分类号： G03F1/32
摘要： A structure, a method of fabricating and a method of using a phase shift mask (PSM) having a first phase shifted section, a half tone section, and a second phase shifted section. The first phase shift section and the half tone section are shifted 180 degrees with the second phase shift region. Embodiments provide for (1) a half tone, single trench alternating phase shift mask and (2) a half tone, dual trench alternating phase shift mask. The half tone region provides advantages over conventional alternating phase shift masks.
摘要翻译：一种结构，制造方法和使用具有第一相移部分，半色调部分和第二相移部分的相移掩模（PSM）的方法。第一相移部分和半色调部分与第二相移区域移动180度。实施例提供（1）半色调单沟槽交替相移掩模和（2）半色调双沟道交替相移掩模。半色调区域提供优于常规交替相移掩模的优点。

4. 发明申请

US20050089763A1 Method for dual damascene patterning with single exposure using tri-tone phase shift mask 有权
标题翻译：使用三色相移掩模的单次曝光的双镶嵌图案化方法
公开(公告)号：US20050089763A1
公开(公告)日：2005-04-28
申请号：US10693202
申请日：2003-10-24
申请人： Sia Tan , Qun Lin , Soon Tan , Huey Chong
发明人： Sia Tan , Qun Lin , Soon Tan , Huey Chong
IPC分类号： G03F1/00 , G03F1/14 , G03F7/00 , G03F9/00
CPC分类号： G03F1/32
摘要： A reticle structure and a method of forming a photoresist profile on a substrate using the reticle having a multi-level profile. The reticle comprises (1) a transparent substrate, (2) a partially transmitting 180 degree phase shift film overlying predetermined areas of the transparent substrate to transmit approximately 20 to 70% of incident light, and (3) an opaque film overlying the predetermined areas of the partially transmitting 180 degree phase shift film. The method comprises the following steps: a) depositing a photoresist film over the substrate; b) directing light to the photoresist film through the reticle, and c) developing the photoresist film to form an opening in the resist layer where light only passed thru the substrate, and to remove intermediate thickness of the photoresist film, in the areas where the light passed through the partially transmitting 180 degree phase shift film. In an aspect, the photoresist film is comprised of a lower photoresist layer and an upper photoresist layer. The lower photoresist layer is less sensitive to light than the upper photoresist layer. In an aspect, the resist profile is used to form a dual damascene shaped opening.
摘要翻译：掩模版结构和使用具有多层轮廓的掩模版在基板上形成光刻胶轮廓的方法。掩模版包括（1）透明基板，（2）覆盖透明基板的预定区域的部分透射的180度相移膜，以透射大约20至70％的入射光，以及（3）覆盖预定区域的不透明膜的部分透射180度相移膜。该方法包括以下步骤：a）在衬底上沉积光致抗蚀剂膜; b）通过掩模版将光引导到光致抗蚀剂膜，以及c）使光致抗蚀剂膜显影，以在抗蚀剂层中形成光，其中只有光通过基底，并且除去光致抗蚀剂膜的中间厚度，光通过部分透射的180度相移膜。在一个方面，光致抗蚀剂膜由下光致抗蚀剂层和上光致抗蚀剂层组成。下部光致抗蚀剂层比上部光致抗蚀剂层对光敏感性差。在一方面，抗蚀剂轮廓用于形成双镶嵌形状的开口。

5. 发明授权

US5973195A Surfactants derived from 2-(2-hydroxyphenyl)benzenesulfinate and alkyl-substituted derivatives 失效
标题翻译：衍生自2-（2-羟基苯基）苯亚磺酸盐和烷基取代衍生物的表面活性剂
公开(公告)号：US5973195A
公开(公告)日：1999-10-26
申请号：US44272
申请日：1998-03-19
申请人： Elaine A. Lange , Qun Lin , Kurt R. Nielsen , Christopher C. Dooyema
发明人： Elaine A. Lange , Qun Lin , Kurt R. Nielsen , Christopher C. Dooyema
IPC分类号： C07C309/42 , C07C313/14 , C07C317/22 , C11D1/22 , C07F5/02
CPC分类号： C07C313/14 , C07C309/42 , C07C317/22 , C11D1/22
摘要： The present invention relates to compounds having utility as surfactants which are derived from intermediates produced in petroleum biodesulfurization processes. The compounds of the invention include acyloxybiphenylsulfinates, acyloxybiphenylsulfonates, alkyl sulfinatobiphenyl ethers and alkyl sulfonatobiphenyl ethers. The invention also provides methods of producing these compounds.
摘要翻译：本发明涉及可用作表面活性剂的化合物，其衍生自在石油生物脱硫方法中生产的中间体。本发明的化合物包括酰氧基联苯亚磺酸盐，酰氧基联苯基磺酸盐，烷基亚磺酰基联苯醚和烷基磺酸二苯醚。本发明还提供了生产这些化合物的方法。

6. 发明授权

US06303562B1 Compositions comprising 2-(2-hydroxyphenyl)benzenesulfinate and alkyl-substituted derivatives thereof 失效
标题翻译：包含2-（2-羟基苯基）苯亚磺酸酯及其烷基取代的衍生物的组合物
公开(公告)号：US06303562B1
公开(公告)日：2001-10-16
申请号：US09596968
申请日：2000-06-20
申请人： Elaine A. Lange , Qun Lin
发明人： Elaine A. Lange , Qun Lin
IPC分类号： C11D122
CPC分类号： C07C313/04 , C11D1/22
摘要： The present invention relates to certain alkylated 2-(2-hydroxyphenyl) benzenesulfinic acid and 2-(2-hydroxyphenyl)benzenesulfonic acid compounds and compositions which consist essentially of 2-(2-hydroxyphenyl) benzenesulfinic acid, 2-(2-hydroxyphenyl)benzenesulfonic acid and/or substituted derivatives thereof. The compositions of the invention are useful as hydrotropes and are also of use as, or as starting materials for, surfactants, and as starting materials for the synthesis of other useful chemicals such as, polymers and resins, solvents, adhesives and biocides.
摘要翻译：本发明涉及某些烷基化的2-（2-羟基苯基）苯亚磺酸和2-（2-羟基苯基）苯磺酸化合物和基本上由2-（2-羟基苯基）苯亚磺酸，2-（2-羟基苯基）苯磺酸和/或其取代的衍生物。本发明的组合物可用作水溶助长剂，并且也可用作表面活性剂的起始材料，也可用作合成其它有用化学品如聚合物和树脂，溶剂，粘合剂和杀生物剂的起始材料。

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