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1. 发明申请

US20060088770A1 Method and apparatus for contact hole unit cell formation 有权
标题翻译：接触孔单元电池形成的方法和装置
公开(公告)号：US20060088770A1
公开(公告)日：2006-04-27
申请号：US10973182
申请日：2004-10-25
申请人： Soon Tan , Sia Tan , Qunying Lin , Huey Chong , Liang-Choo Hsia
发明人： Soon Tan , Sia Tan , Qunying Lin , Huey Chong , Liang-Choo Hsia
IPC分类号： G03F9/00 , G03F7/00
CPC分类号： G03F1/29 , G03F1/26
摘要： A method for forming a contact hole unit cell is provided. A light transparent contact hole region of a first phase is positioned at a first plane. A light transparent phase-shifting region of a second phase is positioned at the first plane, the second phase being substantially out of phase with the first phase. The phase-shifting region substantially surrounds the contact hole region. A light transparent border region is positioned at the first plane outside and substantially surrounding the phase-shifting region. The border region has a phase substantially the same as that of the contact hole region. The contact hole region, the phase-shifting region, and the border region are positioned to cause light from the first plane to be reinforcing in a target contact hole configuration on a second plane and to be substantially neutralizing outside the target contact hole configuration on the second plane.
摘要翻译：提供一种形成接触孔单元的方法。第一相的透光接触孔区域位于第一平面。第二相的光透明相移区位于第一平面处，第二相基本上与第一相不同相。相移区域基本上围绕接触孔区域。光透明边界区域位于第一平面的外侧并基本围绕相移区域。边界区域具有与接触孔区域大致相同的相位。接触孔区域，相移区域和边界区域被定位成使得来自第一平面的光在第二平面上的目标接触孔构造中被加强并且基本上在目标接触孔构造的外部中和第二架飞机

2. 发明申请

US20050058912A1 Half tone alternating phase shift masks 失效
标题翻译：半色调交替相移掩模
公开(公告)号：US20050058912A1
公开(公告)日：2005-03-17
申请号：US10661048
申请日：2003-09-13
申请人： Qun Lin , Sia Tan , Soon Tan , Huey Chong
发明人： Qun Lin , Sia Tan , Soon Tan , Huey Chong
IPC分类号： G03F1/00 , G03F9/00
CPC分类号： G03F1/32
摘要： A structure, a method of fabricating and a method of using a phase shift mask (PSM) having a first phase shifted section, a half tone section, and a second phase shifted section. The first phase shift section and the half tone section are shifted 180 degrees with the second phase shift region. Embodiments provide for (1) a half tone, single trench alternating phase shift mask and (2) a half tone, dual trench alternating phase shift mask. The half tone region provides advantages over conventional alternating phase shift masks.
摘要翻译：一种结构，制造方法和使用具有第一相移部分，半色调部分和第二相移部分的相移掩模（PSM）的方法。第一相移部分和半色调部分与第二相移区域移动180度。实施例提供（1）半色调单沟槽交替相移掩模和（2）半色调双沟道交替相移掩模。半色调区域提供优于常规交替相移掩模的优点。

3. 发明授权

US08183883B1 Integrated circuit reconfiguration techniques 有权
标题翻译：集成电路重构技术
公开(公告)号：US08183883B1
公开(公告)日：2012-05-22
申请号：US12762295
申请日：2010-04-16
申请人： Chee Seng Tan , Chai Sia Tan , Elden Chau , John Tse , Neville Carvalho
发明人： Chee Seng Tan , Chai Sia Tan , Elden Chau , John Tse , Neville Carvalho
IPC分类号： H03K19/177 , G06F7/38
CPC分类号： H03K19/1776 , G06F17/5054
摘要： A memory configuration circuit is provided. The memory configuration circuit may be integrated into a programmable logic device (PLD) and as such, may be used to configure and reconfigure specific elements in the PLD. The memory configuration circuit includes a comparator circuit and a counter. The comparator circuit is coupled to receive two data words from two different memory configuration sources. The comparator circuit compares the two data words received before writing one of the data words to a configuration memory. One of the data words may be written to the configuration memory if the two data words compared are not equal. The counter increments the address of the memory configuration sources so that a next data word can be processed after the current data word is processed.
摘要翻译：提供存储器配置电路。存储器配置电路可以集成到可编程逻辑器件（PLD）中，并且因此可用于配置和重新配置PLD中的特定元件。存储器配置电路包括比较器电路和计数器。比较器电路被耦合以从两个不同的存储器配置源接收两个数据字。比较器电路将在将一个数据字写入之前接收的两个数据字与配置存储器进行比较。如果所比较的两个数据字不相等，则可以将一个数据字写入配置存储器。计数器增加存储器配置源的地址，以便在处理当前数据字之后处理下一个数据字。

4. 发明授权

US07736070B2 Double mold optocoupler 有权
标题翻译：双模光耦合器
公开(公告)号：US07736070B2
公开(公告)日：2010-06-15
申请号：US11216863
申请日：2005-08-31
申请人： Soo Kiang Ho , Hong Sia Tan , Thiam Siew Gary Tay
发明人： Soo Kiang Ho , Hong Sia Tan , Thiam Siew Gary Tay
IPC分类号： G02B6/36 , H01L29/16
CPC分类号： H01L31/0203 , H01L25/167 , H01L33/52 , H01L2224/48091 , H01L2224/48247 , H01L2924/1815 , H01L2924/00014
摘要： Double mold opto-coupler and method for manufacture. A first subassembly is formed that includes a light detector. The first subassembly is molded with a first mold material to form a molded first subassembly. A light source is attached to the molded first sub-assembly to form a second sub-assembly. The second sub-assembly is molded with a second mold material to form a final assembly with predetermined dimensions.
摘要翻译：双模光耦合器和制造方法。形成包括光检测器的第一子组件。第一子组件用第一模具材料模制以形成模制的第一子组件。光源连接到模制的第一子组件以形成第二子组件。第二子组件用第二模具材料模制以形成具有预定尺寸的最终组件。

5. 发明申请

US20070128527A1 Angled-wedge chrome-face wall for intensity balance of alternating phase shift mask 有权
标题翻译：角度楔形铬面墙用于交变相移掩模的强度平衡
公开(公告)号：US20070128527A1
公开(公告)日：2007-06-07
申请号：US11297532
申请日：2005-12-07
申请人： Gek Chua , Sia Tan , Qunying Lin , Cho Tay , Chenggen Quan
发明人： Gek Chua , Sia Tan , Qunying Lin , Cho Tay , Chenggen Quan
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/30
摘要： A method and structure for a phase shift mask having a light reducing layer with sloped sidewalls. In some embodiments, the sloped sidewalls can help improve the image imbalance. The mask comprising: a substrate having a first region, a second region and a third region; the third region position between the first region and the second regions; an light reducing layer over the substrate having a first opening over the first region and a second opening over the second region; the first opening and the second opening defined by light reducing layer sidewalls; the sidewalls of the opaque layer are slanted at an angle less than 90 degrees with the plane of the top surface of the substrate.
摘要翻译：一种具有具有倾斜侧壁的减光层的相移掩模的方法和结构。在一些实施例中，倾斜侧壁有助于改善图像不平衡。该掩模包括：具有第一区域，第二区域和第三区域的衬底; 第一区域和第二区域之间的第三区域位置; 在所述衬底上方的减光层，在所述第一区域上具有第一开口，在所述第二区域上具有第二开口; 由减光层侧壁限定的第一开口和第二开口; 不透明层的侧壁以与基板的顶表面的平面成小于90度的角度倾斜。

6. 发明申请

US20060099518A1 Method to resolve line end distortion for alternating phase shift mask 有权
标题翻译：解决交变相移掩模线路失真的方法
公开(公告)号：US20060099518A1
公开(公告)日：2006-05-11
申请号：US10985263
申请日：2004-11-10
申请人： Sia Tan , Qunying Lin , Liang-Choo Hsia
发明人： Sia Tan , Qunying Lin , Liang-Choo Hsia
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F1/30
摘要： A embodiment method for forming a layout for a phase shift mask. A embodiment comprises providing a layout comprising a first feature, a first shifter region and a second shifter region. The first feature preferably has a L-shape portion with an elbow region. The first shifter region is on the outside of the L-shaped portion and the second shifter region is on the inside of the L-shaped portion. The elbow region has an outside corner away from the second shifter region. We identify a phase conflict region caused by the L-shaped portion of the first feature, the first shifter region and the second shifter region. We resolve the phase conflict by modifying the elbow region by moving the outside corner of the elbow region away from the first shifter region and the phase conflict region. The modification of the elbow region further comprises forming a jog region in the line end section of the first feature.
摘要翻译：一种用于形成相移掩模布局的实施例方法。实施例包括提供包括第一特征，第一移位区和第二移位区的布局。第一特征优选具有肘部区域的L形部分。第一移位区域位于L形部分的外侧，第二移位区域位于L形部分的内侧。肘部区域具有远离第二移位区域的外角。我们识别由第一特征的L形部分，第一移位区域和第二移位区域引起的相位冲突区域。我们通过移动肘部区域的外角远离第一移位区域和相位冲突区域来修改肘部区域来解决相位冲突。肘部区域的修改还包括在第一特征的线端部中形成点动区域。

7. 发明申请

US20060088771A1 Anti-reflective sidewall coated alternating phase shift mask and fabrication method 有权
标题翻译：抗反射侧壁涂层交替相移掩模及其制作方法
公开(公告)号：US20060088771A1
公开(公告)日：2006-04-27
申请号：US10973526
申请日：2004-10-25
申请人： Sia Tan , Qunying Lin , Liang-Choo Hsia
发明人： Sia Tan , Qunying Lin , Liang-Choo Hsia
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/30
摘要： A method for fabricating a phase shift mask is provided. A trenched phase shift mask having portions of a light-blocking layer thereon is formed. A layer of anti-reflective material is then formed on the trenched phase shift mask and the portions of the light-blocking layer. The anti-reflective material is then removed on horizontal surfaces of the trenched phase shift mask and of the portions of the light-blocking layer.
摘要翻译：提供了制造相移掩模的方法。形成其上具有遮光层的部分的沟槽相移掩模。然后在沟槽相移掩模和遮光层的部分上形成一层抗反射材料。然后在沟槽相移掩模的水平表面和遮光层的部分上去除抗反射材料。

8. 发明申请

US20060083994A1 Method and apparatus for removing radiation side lobes 有权
标题翻译：用于去除辐射旁瓣的方法和装置
公开(公告)号：US20060083994A1
公开(公告)日：2006-04-20
申请号：US10970077
申请日：2004-10-20
申请人： Sia Tan , Soon Tan , Qunying Lin , Huey Chong , Liang-Choo Hsia
发明人： Sia Tan , Soon Tan , Qunying Lin , Huey Chong , Liang-Choo Hsia
IPC分类号： G03C5/00 , G06F17/50 , G03F1/00
CPC分类号： G03F1/34 , G03F1/36
摘要： A method and structure for removing side lobes is provided by positioning first and second radiation transparent regions of respective first and second phases at a first plane with the first and second phases being substantially out of phase. Further, positioning the first and the second region to cause radiation at a second plane to be neutralized in a first region, not to be neutralized in a second region, and to have a side lobe in a third region. Further, positioning a non-transparent region at the first plane to assure radiation at the second plane to be neutralized in the first region and positioning a third radiation transparent region of the first or second phase at the first plane to neutralize the side lobes in the third region at the second plane.
摘要翻译：通过将第一和第二相的第一和第二辐射透明区域定位在第一平面上，其中第一和第二相基本上异相，来提供用于去除旁瓣的方法和结构。此外，定位第一和第二区域以使第二平面上的辐射在第一区域中被中和，而不在第二区域中被中和，并且在第三区域中具有旁瓣。此外，在第一平面处定位不透明区域以确保在第二平面处的辐射在第一区域中被中和，并且将第一或第二相的第三辐射透明区域定位在第一平面处以中和旁瓣第三个地区在第二个飞机。

9. 发明申请

US20050089763A1 Method for dual damascene patterning with single exposure using tri-tone phase shift mask 有权
标题翻译：使用三色相移掩模的单次曝光的双镶嵌图案化方法
公开(公告)号：US20050089763A1
公开(公告)日：2005-04-28
申请号：US10693202
申请日：2003-10-24
申请人： Sia Tan , Qun Lin , Soon Tan , Huey Chong
发明人： Sia Tan , Qun Lin , Soon Tan , Huey Chong
IPC分类号： G03F1/00 , G03F1/14 , G03F7/00 , G03F9/00
CPC分类号： G03F1/32
摘要： A reticle structure and a method of forming a photoresist profile on a substrate using the reticle having a multi-level profile. The reticle comprises (1) a transparent substrate, (2) a partially transmitting 180 degree phase shift film overlying predetermined areas of the transparent substrate to transmit approximately 20 to 70% of incident light, and (3) an opaque film overlying the predetermined areas of the partially transmitting 180 degree phase shift film. The method comprises the following steps: a) depositing a photoresist film over the substrate; b) directing light to the photoresist film through the reticle, and c) developing the photoresist film to form an opening in the resist layer where light only passed thru the substrate, and to remove intermediate thickness of the photoresist film, in the areas where the light passed through the partially transmitting 180 degree phase shift film. In an aspect, the photoresist film is comprised of a lower photoresist layer and an upper photoresist layer. The lower photoresist layer is less sensitive to light than the upper photoresist layer. In an aspect, the resist profile is used to form a dual damascene shaped opening.
摘要翻译：掩模版结构和使用具有多层轮廓的掩模版在基板上形成光刻胶轮廓的方法。掩模版包括（1）透明基板，（2）覆盖透明基板的预定区域的部分透射的180度相移膜，以透射大约20至70％的入射光，以及（3）覆盖预定区域的不透明膜的部分透射180度相移膜。该方法包括以下步骤：a）在衬底上沉积光致抗蚀剂膜; b）通过掩模版将光引导到光致抗蚀剂膜，以及c）使光致抗蚀剂膜显影，以在抗蚀剂层中形成光，其中只有光通过基底，并且除去光致抗蚀剂膜的中间厚度，光通过部分透射的180度相移膜。在一个方面，光致抗蚀剂膜由下光致抗蚀剂层和上光致抗蚀剂层组成。下部光致抗蚀剂层比上部光致抗蚀剂层对光敏感性差。在一方面，抗蚀剂轮廓用于形成双镶嵌形状的开口。

10. 发明申请

US20130170936A1 Self-Aligning Pick and Place Collet for Tape and Reel Machine 审中-公开
标题翻译：自动对准拾纸卷盘机
公开(公告)号：US20130170936A1
公开(公告)日：2013-07-04
申请号：US13342241
申请日：2012-01-03
申请人： Hong Sia Tan , Chee Mang Wong , Yik Loong Leong
发明人： Hong Sia Tan , Chee Mang Wong , Yik Loong Leong
IPC分类号： B25J15/06 , B25J9/00 , B25J11/00
CPC分类号： B25J15/0616
摘要： Various embodiments of methods and devices are provided for a self-aligning pick and place collet having proximal and distal ends configured for use with a tape and reel machine. A suction area is located at a distal end of the collet. A pick and place collet contact area is located adjacent to and outwardly from the suction area, and comprises tapered sidewalls that depend downwardly and outwardly away from the outer periphery of the suction area. The tapered sidewalls and the outer periphery of the suction area are configured and dimensioned to cause an electronic device to substantially self-align and center itself with respect to the collet when engaged thereby.
摘要翻译：提供了方法和装置的各种实施例，用于自动对准拾取和放置夹头，其具有被配置为用于卷带机的近端和远端。抽吸区域位于夹头的远端。拾取和放置夹头接触区域位于邻近抽吸区域并且从抽吸区域向外定位，并且包括从抽吸区域的外周向下和向外远离的锥形侧壁。抽吸区域的锥形侧壁和外周边的构造和尺寸被设计成使得电子装置在接合时基本上自对准并且相对于夹头居中。

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