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    • 2. 发明授权
    • Multilayered wafer with thick sacrificial layer using porous silicon or porous silicon oxide and fabrication method thereof
    • 使用多孔硅或多孔氧化硅的具有厚牺牲层的多层晶片及其制造方法
    • US06277712B1
    • 2001-08-21
    • US09540552
    • 2000-03-31
    • Sung-gyu KangKi Bang LeeJae-joon ChoiHee-moon Jeong
    • Sung-gyu KangKi Bang LeeJae-joon ChoiHee-moon Jeong
    • H01L21322
    • G01P15/0802B81C1/0019B81C1/00507B81C2201/0115H01L21/76251H01L21/76262
    • A multilayered wafer with a thick sacrificial layer, which is obtained by forming a sacrificial layer of oxidized porous silicon or porous silicon and growing an epitaxial polysilicon layer on the sacrificial layer, and a fabrication method thereof are provided. The multilayered wafer with a thick sacrificial layer adopts a porous silicon layer or an oxidized porous silicon layer as a sacrificial layer such that a sufficient gap can be obtained between a substrate and a suspension structure upon the manufacture of the suspension structure of a semiconductor actuator or a semiconductor inertia sensor. Also, in a fabrication method of the wafer according to the present invention, a p+-type or n+-type wafer doped at a high concentration is prepared for, and then a thick porous silicon layer can be obtained simply by anodic-bonding the surface of the wafer. Also, when polysilicon is grown on a porous silicon layer by an epitaxial process, it is grown faster than when single crystal silicon is grown.
    • 提供了通过在牺牲层上形成氧化的多孔硅或多孔硅的牺牲层并生长外延多晶硅层而获得的具有厚牺牲层的多层晶片及其制造方法。 具有厚牺牲层的多层晶片采用多孔硅层或氧化多孔硅层作为牺牲层,使得在制造半导体致动器的悬架结构时可在衬底和悬架结构之间获得足够的间隙,或者 半导体惯性传感器。 此外,在根据本发明的晶片的制造方法中,制备以高浓度掺杂的p +型或n +型晶片,然后可以简单地通过阳极结合表面获得厚的多孔硅层 的晶片。 而且,当通过外延工艺在多孔硅层上生长多晶硅时,其生长比单晶硅生长时更快。