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    • 7. 发明授权
    • Super-resolution lithography apparatus and method based on multi light exposure method
    • 基于多光曝光方法的超分辨光刻设备及方法
    • US08279400B2
    • 2012-10-02
    • US12403111
    • 2009-03-12
    • Hee Su ParkSun Kyung LeeJae Yong LeeSang-Kyung ChoiDong-Hoon Lee
    • Hee Su ParkSun Kyung LeeJae Yong LeeSang-Kyung ChoiDong-Hoon Lee
    • G03B27/42
    • G03F7/70408G03F7/7005G03F7/70466G03F7/70575
    • Disclosed herein is a super-resolution lithography apparatus and method based on a multiple light exposure method. The super-resolution lithography apparatus comprises a photographic medium having energy levels of a first ground state, a second ground state, a first excited state, a second excited state and a quenching state; a first light source inducing energy level transition between the first ground state and the first excited state of the photographic medium; a second light source inducing energy level transition between the second ground state and the first excited state of the photographic medium; and a third light source inducing energy level transition between the second ground state and the second excited state of the photographic medium. Accordingly, the resolution of lithography can be improved simply by using a photographic medium having a simple structure and conventional laser beams and increasing the number of exposure steps. Furthermore, a multiple photon absorber that is difficult to obtain, a medium having a complicated energy level and a high-efficiency quantum optical light are unnecessary, and thus economic efficiency is improved.
    • 本文公开了一种基于多次曝光方法的超分辨率光刻设备和方法。 超分辨光刻设备包括具有第一基态,第二基态,第一激发态,第二激发态和淬灭态的能级的照相介质; 在照相介质的第一基态和第一激发态之间引起能级转变的第一光源; 第二光源,在所述第二基态和所述照相介质的所述第一激发态之间引起能级转变; 以及在照相介质的第二基态和第二激发态之间引起能级跃迁的第三光源。 因此,可以简单地通过使用具有简单结构和传统激光束的照相介质并增加曝光步骤的数量来改进光刻的分辨率。 此外,难以获得难以获得的多光子吸收体,具有复杂的能级和高效量子光的介质,因而提高了经济效率。