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1. 发明授权

US07235349B2 Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator 失效
标题翻译：使用含有酸发生剂的底部抗反射涂膜形成超细纹图案的方法
公开(公告)号：US07235349B2
公开(公告)日：2007-06-26
申请号：US11321126
申请日：2005-12-29
申请人： Sung Koo Lee , Jae Chang Jung , Geun Su Lee , Ki-Soo Shin
发明人： Sung Koo Lee , Jae Chang Jung , Geun Su Lee , Ki-Soo Shin
IPC分类号： G03F7/00 , G03F7/20 , G03F7/26 , G03F7/38 , G03F7/40
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/091 , Y10S430/114 , Y10S430/119 , Y10S430/12 , Y10S430/151
摘要： A process of forming ultra fine patterns using bottom anti-reflective coating containing acid generator. More particularly, a process of forming vertical patterns using an organic bottom anti-reflective coating containing excessive amount of acid generator, in order to prevent formation of sloping patterns due to photoresist resins absorbing wavelength of light used as light sources during lithography process using light sources such as KrF, ArF, VUV, EUV, E-beam and ion beam, even when photoresist resins having high absorbance to light source are used.
摘要翻译：使用含酸产生器的底部抗反射涂层形成超细纹图案的方法。更具体地，涉及使用含有过量酸产生剂的有机底部防反射涂层形成垂直图案的方法，以便防止在使用光源的光刻工艺期间吸收用作光源的光的波长的光致抗蚀剂树脂形成倾斜图案例如KrF，ArF，VUV，EUV，电子束和离子束，即使使用对光源具有高吸光度的光致抗蚀剂树脂。

2. 发明授权

US07563753B2 Cleaning solution for removing photoresist 有权
标题翻译：用于除去光致抗蚀剂的清洁溶液
公开(公告)号：US07563753B2
公开(公告)日：2009-07-21
申请号：US10317578
申请日：2002-12-12
申请人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin , Keun Kyu Kong , Sung Koo Lee , Young Sun Hwang
发明人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin , Keun Kyu Kong , Sung Koo Lee , Young Sun Hwang
IPC分类号： C11D7/50
CPC分类号： C11D3/3738 , C11D1/44 , C11D1/72 , C11D1/721 , C11D1/722 , C11D3/373 , C11D3/3742 , C11D7/263 , C11D7/265 , C11D7/267 , C11D7/3218 , C11D7/34 , C11D11/0047 , G03F7/422
摘要： Cleaning solutions for removing photoresist resins and a method of forming patterns using the same are disclosed. The cleaning solution includes water (H2O) as main component, one or more surfactants as additive selected from the group consisting of polyoxyalkylene compounds, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having carboxylic acid (—COOH) group, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having sulfonic acid (—SO3H) group, polyethylene glycol compounds, compounds of Formula 3, compounds having a molecular weight ranging from 1000 to 10000 including repeating unit of Formula 4, polyether denatured silicon compounds and alcohol compounds. wherein R1, R2, R3, R4, R5, A, l and n are defined in the specification.
摘要翻译：公开了用于除去光致抗蚀剂树脂的清洁溶液和使用其形成图案的方法。清洗溶液包括作为主要成分的水（H 2 O），一种或多种作为添加剂的表面活性剂，其选自聚氧化烯化合物，式1的醇胺盐和具有羧酸（-COOH）基团的烃化合物，式1的醇胺和具有磺酸（-SO 3 H）基团的烃化合物，聚乙二醇化合物，式3化合物，分子量为1000至10000的化合物，包括式4的重复单元，聚醚变性硅化合物和醇化合物。其中R1，R2，R3，R4，R5，A，1和n在本说明书中定义。

3. 发明授权

US07138218B2 Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator 有权
公开(公告)号：US07138218B2
公开(公告)日：2006-11-21
申请号：US10321123
申请日：2002-12-17
申请人： Sung Koo Lee , Jae Chang Jung , Geun Su Lee , Ki Soo Shin
发明人： Sung Koo Lee , Jae Chang Jung , Geun Su Lee , Ki Soo Shin
IPC分类号： G03F7/004
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/091 , Y10S430/114 , Y10S430/119 , Y10S430/12 , Y10S430/151
摘要： A process of forming ultra fine patterns using bottom anti-reflective coating containing acid generator. More particularly, a process of forming vertical patterns using an organic bottom anti-reflective coating containing excessive amount of acid generator, in order to prevent formation of sloping patterns due to photoresist resins absorbing wavelength of light used as light sources during lithography process using light sources such as KrF, ArF, VUV, EUV, E-beam and ion beam, even when photoresist resins having high absorbance to light source are used.

4. 发明授权

US07238653B2 Cleaning solution for photoresist and method for forming pattern using the same 有权
标题翻译：用于光致抗蚀剂的清洁溶液和使用其形成图案的方法
公开(公告)号：US07238653B2
公开(公告)日：2007-07-03
申请号：US10723029
申请日：2003-11-26
申请人： Geun Su Lee , Cheol Kyu Bok , Young Sun Hwang , Sung Koo Lee , Seung Chan Moon , Ki Soo Shin
发明人： Geun Su Lee , Cheol Kyu Bok , Young Sun Hwang , Sung Koo Lee , Seung Chan Moon , Ki Soo Shin
IPC分类号： C11D1/72
CPC分类号： G03F7/322 , C11D1/345 , C11D3/30 , C11D11/0047
摘要： Cleaning solutions for photoresist are disclosed which are useful for cleaning a semiconductor substrate in the last step of development when photoresist patterns are formed. Also, methods for forming photoresist patterns using the same are disclosed. The disclosed cleaning solution comprises H2O as a solution, a surfactant which is phosphate-alcoholamine salt represented by Formula 1, and an alcohol compound. The disclosed cleaning solution has lower surface tension than that of distilled water which has been used for conventional cleaning solutions, thereby improving resistance to photoresist pattern collapse and stabilizing the photoresist pattern formation. wherein R, x, y, z, a and b are as defined in the specification.
摘要翻译：公开了用于光致抗蚀剂的清洁溶液，其在形成光致抗蚀剂图案时在开发的最后步骤中用于清洁半导体衬底。此外，公开了使用其形成光致抗蚀剂图案的方法。所公开的洗涤溶液包含作为溶液的H 2 O 2，作为由式1表示的磷酸 - 醇胺盐的表面活性剂和醇化合物。所公开的清洗溶液具有比用于常规清洁溶液的蒸馏水低的表面张力，从而提高抗光刻胶图案的崩溃和稳定光致抗蚀剂图案形成。其中R，x，y，z，a和b如说明书中所定义。

5. 发明授权

US06924078B2 Photoresist monomers, polymers and photoresist compositions for preventing acid diffusion 失效
标题翻译：用于防止酸扩散的光致抗蚀剂单体，聚合物和光致抗蚀剂组合物
公开(公告)号：US06924078B2
公开(公告)日：2005-08-02
申请号：US10225992
申请日：2002-08-22
申请人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin , Se Jin Choi , Deog Bae Kim , Jae Hyun Kim
发明人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin , Se Jin Choi , Deog Bae Kim , Jae Hyun Kim
IPC分类号： G03F7/027 , C07D273/00 , C07D323/00 , C08F226/06 , C08F232/00 , C08F234/02 , G03F7/039 , H01L21/027 , G03F7/40
CPC分类号： C07D273/00 , C07D323/00 , G03F7/0395 , G03F7/0397 , Y10S430/143
摘要： Photoresist monomers, polymers thereof, photoresist compositions containing the same for preventing acid generated in the exposed area during the course of a photolithography process from being diffused to the unexposed area. The line edge roughness and slope pattern are improved when an ultrafine photoresist pattern is formed using photoresist copolymer having a multi-oxygen-containing compound as a repeating unit such as an ethyleneoxy moiety represented by Formula 1 with at least one polymerizable carbon-carbon double bond. In addition, the shape of pattern is improved by eliminating top loss and the adhesion of pattern to the substrate is improved. wherein n is an integer ranging from 1 to 5.
摘要翻译：光致抗蚀剂单体，其聚合物，含有其的光致抗蚀剂组合物，用于防止在光刻过程中在曝光区域产生的酸被扩散到未曝光区域。当使用具有多含氧化合物作为重复单元的光致抗蚀剂共聚物形成超细光致抗蚀剂图案时，线边缘粗糙度和斜率图案得到改善，所述重复单元例如由式1表示的乙氧基部分与至少一个可聚合的碳 - 碳双键。此外，通过消除顶部损耗来提高图案的形状，并提高图案对基板的粘附性。其中n是1至5的整数。

6. 发明授权

US06921622B2 Photoresist monomers, polymers thereof and photoresist compositions containing the same 失效
标题翻译：光致抗蚀剂单体，其聚合物和含有它们的光致抗蚀剂组合物
公开(公告)号：US06921622B2
公开(公告)日：2005-07-26
申请号：US10054532
申请日：2002-01-22
申请人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin
发明人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin
IPC分类号： C08F234/04 , G03F7/004 , G03F7/039 , G03F7/20
CPC分类号： G03F7/0046 , C08F234/04 , G03F7/0392 , G03F7/0395 , G03F7/0397 , Y10S430/106
摘要： Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist polymer includes a repeating unit comprising the photoresist monomer of Formula 1 as a comonomer and the photoresist composition containing the same have excellent etching resistance, heat resistance and adhesiveness to a wafer, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at 157 nm wavelength, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) in fabricating a minute circuit for a high integration semiconductor device
摘要翻译：下列通式1的光致抗蚀剂单体，其光致抗蚀剂聚合物和含有它们的光致抗蚀剂组合物。光致抗蚀剂聚合物包括包含作为共聚单体的式1的光致抗蚀剂单体的重复单元，并且含有该光致抗蚀剂组合物的光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和与晶片的粘合性，并且可在四甲基氢氧化铵（TMAH）水溶液中显影。此外，光致抗蚀剂组合物在157nm波长处具有低吸光度，因此适用于在制造用于高集成度半导体器件的微小电路中使用诸如VUV（157nm）的紫外光源的光刻工艺

7. 发明授权

US06849375B2 Photoresist monomers, polymers thereof and photoresist compositions containing the same 有权
标题翻译：光致抗蚀剂单体，其聚合物和含有它们的光致抗蚀剂组合物
公开(公告)号：US06849375B2
公开(公告)日：2005-02-01
申请号：US10080319
申请日：2002-02-21
申请人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin
发明人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/0395 , G03F7/0046 , G03F7/0392 , G03F7/0397 , Y10S430/114
摘要： Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist polymers include a repeating unit comprising the photoresist monomer of Formula 1 as a comonomer and the photoresist compositions containing the same have excellent etching resistance, heat resistance and adhesiveness to a wafer, and are developable in aqueous tetramethylammonium hydroxide (TMAH) solutions. In addition, the photoresist compositions have a low light absorbance at 157 nm wavelength, and thus are suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) in fabricating a minute circuit for a high integration semiconductor device. wherein Y1, Y2, Y3, Y4, Y5, Y6, Z1, Z2 and m are defined in the specification.
摘要翻译：下列通式1的光致抗蚀剂单体，其光致抗蚀剂聚合物和含有它们的光致抗蚀剂组合物。光致抗蚀剂聚合物包括包含作为共聚单体的式1的光致抗蚀剂单体的重复单元，并且含有该光致抗蚀剂组合物的光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和与晶片的粘合性，并且可在四甲基氢氧化铵（TMAH）水溶液中显影。此外，光致抗蚀剂组合物在157nm波长处具有低吸光度，因此适用于在制造用于高集成度半导体器件的微小电路中使用诸如VUV（157nm）的紫外光源的光刻工艺。在Y1， Y2，Y3，Y4，Y5，Y6，Z1，Z2和m在本说明书中定义。

8. 发明授权

US06841526B2 Cleaning solution for removing photoresist 失效
标题翻译：用于除去光致抗蚀剂的清洁溶液
公开(公告)号：US06841526B2
公开(公告)日：2005-01-11
申请号：US10280834
申请日：2002-10-25
申请人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin
发明人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin
IPC分类号： H01L21/304 , C11D3/30 , C11D3/43 , C11D11/00 , G03F7/42 , C11D7/32 , C11D7/50
CPC分类号： C11D11/0047 , C11D3/30 , C11D3/43 , G03F7/425 , G03F7/426
摘要： Cleaning solutions for removing photoresist materials and a method of forming underlying layer patterns of semiconductor devices using the same. The cleaning solutions for removing photoresist include a solvent mixture of H2O and an organic solvent, an amine compound, a transition metal-removing material and an alkali metal-removing material, and may further include a hydrazine hydrate.
摘要翻译：用于去除光致抗蚀剂材料的清洁溶液和使用其形成下层图案的半导体器件的方法。用于除去光致抗蚀剂的清洁溶液包括H 2 O和有机溶剂，胺化合物，过渡金属去除材料和碱金属去除材料的溶剂混合物，并且还可以包括水合肼。

9. 发明授权

US06737217B2 Photoresist monomers containing fluorine-substituted benzylcarboxylate and photoresist polymers comprising the same 失效
标题翻译：含有氟取代的苄基羧酸酯的光致抗蚀剂单体和包含其的光致抗蚀剂聚合物
公开(公告)号：US06737217B2
公开(公告)日：2004-05-18
申请号：US10107646
申请日：2002-03-27
申请人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin
发明人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin
IPC分类号： G03F7004
CPC分类号： G03F7/0046 , G03F7/0392 , G03F7/0395
摘要： Photoresist monomers, photoresist polymers prepared therefrom, and photoresist compositions using the polymer are disclosed. The photoresist polymers include photoresist monomers containing fluorine-substituted benzylcarboxylate group represented by Formula 1. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. As the composition has low light absorbance at 193 nm and 157 nm wavelength, it is suitable for a process using ultraviolet light source such as VUV (157 nm). In the Formula, R1, R2, R3 and m are defined in the specification.
摘要翻译：公开了光致抗蚀剂单体，由其制备的光致抗蚀剂聚合物和使用该聚合物的光致抗蚀剂组合物。光致抗蚀剂聚合物包括由式1表示的氟取代的苄基羧酸酯基的光致抗蚀剂单体。光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性，并且可在四甲基氢氧化铵（TMAH）水溶液中显影。由于组合物在193nm和157nm波长处具有低吸光度，因此适用于使用紫外光源如VUV（157nm）的方法。在式中，R1，R2，R3和m在本说明书中定义。

10. 发明授权

US06858371B2 Maleimide-photoresist monomers containing halogen, polymers thereof and photoresist compositions comprising the same 失效
标题翻译：含有卤素的马来酰亚胺 - 光致抗蚀剂单体，其聚合物和包含其的光致抗蚀剂组合物
公开(公告)号：US06858371B2
公开(公告)日：2005-02-22
申请号：US10080335
申请日：2002-02-21
申请人： Geun Su Lee , Jae Chang Jung , Min Ho Jung , Cha Won Koh , Ki Soo Shin
发明人： Geun Su Lee , Jae Chang Jung , Min Ho Jung , Cha Won Koh , Ki Soo Shin
IPC分类号： G03F7/033 , C08F210/04 , C08F220/10 , C08F222/40 , C08F232/08 , G03F7/004 , G03F7/039 , H01L21/027 , C08F26/06
CPC分类号： G03F7/0046 , G03F7/0395 , Y10S430/106 , Y10S430/108
摘要： Photoresist monomers, photoresist polymers prepared thereof, and photoresist compositions using the polymer are disclosed. More specifically, photoresist polymers comprising maleimide monomer represented by Formula 1, and a composition comprising the polymer thereof are disclosed. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and can be developed in an aqueous tetramethylammonium hydroxide (TMAH) solution. As the composition has low light absorbance at 193 nm and 157 nm wavelength, and it is suitable for a process using ultraviolet light source such as VUV (157 nm) wherein, X1, X2, R1, R2 and R3 are defined in the specification.
摘要翻译：公开了光致抗蚀剂单体，其制备的光致抗蚀剂聚合物和使用该聚合物的光致抗蚀剂组合物。更具体地，公开了包含由式1表示的马来酰亚胺单体的光致抗蚀剂聚合物和包含其聚合物的组合物。光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性，并且可以在四甲基氢氧化铵（TMAH）水溶液中显影。由于组合物在193nm和157nm波长处具有低吸光度，并且适用于使用紫外光源如VUV（157nm）的方法，其中X1，X2，R1，R2和R3在本说明书中定义。

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