专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06858371B2 Maleimide-photoresist monomers containing halogen, polymers thereof and photoresist compositions comprising the same 失效
标题翻译：含有卤素的马来酰亚胺 - 光致抗蚀剂单体，其聚合物和包含其的光致抗蚀剂组合物
公开(公告)号：US06858371B2
公开(公告)日：2005-02-22
申请号：US10080335
申请日：2002-02-21
申请人： Geun Su Lee , Jae Chang Jung , Min Ho Jung , Cha Won Koh , Ki Soo Shin
发明人： Geun Su Lee , Jae Chang Jung , Min Ho Jung , Cha Won Koh , Ki Soo Shin
IPC分类号： G03F7/033 , C08F210/04 , C08F220/10 , C08F222/40 , C08F232/08 , G03F7/004 , G03F7/039 , H01L21/027 , C08F26/06
CPC分类号： G03F7/0046 , G03F7/0395 , Y10S430/106 , Y10S430/108
摘要： Photoresist monomers, photoresist polymers prepared thereof, and photoresist compositions using the polymer are disclosed. More specifically, photoresist polymers comprising maleimide monomer represented by Formula 1, and a composition comprising the polymer thereof are disclosed. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and can be developed in an aqueous tetramethylammonium hydroxide (TMAH) solution. As the composition has low light absorbance at 193 nm and 157 nm wavelength, and it is suitable for a process using ultraviolet light source such as VUV (157 nm) wherein, X1, X2, R1, R2 and R3 are defined in the specification.
摘要翻译：公开了光致抗蚀剂单体，其制备的光致抗蚀剂聚合物和使用该聚合物的光致抗蚀剂组合物。更具体地，公开了包含由式1表示的马来酰亚胺单体的光致抗蚀剂聚合物和包含其聚合物的组合物。光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性，并且可以在四甲基氢氧化铵（TMAH）水溶液中显影。由于组合物在193nm和157nm波长处具有低吸光度，并且适用于使用紫外光源如VUV（157nm）的方法，其中X1，X2，R1，R2和R3在本说明书中定义。

2. 发明授权

US06753128B2 Photoresist additive for preventing acid migration and photoresist composition comprising the same 失效
标题翻译：用于防止酸迁移的光致抗蚀剂添加剂和包含其的光致抗蚀剂组合物
公开(公告)号：US06753128B2
公开(公告)日：2004-06-22
申请号：US10272072
申请日：2002-10-16
申请人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin
发明人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin
IPC分类号： G03F7038
CPC分类号： G03F7/0045 , G03F7/0395
摘要： Photoresist additives for preventing the acid generated in the exposed area during the course of a photolithography process from being diffused to the unexposed area, photoresist compositions containing the same, and a process for forming a photoresist pattern using the same. Photoresist compositions comprising the disclosed additive can prevent acid diffusion effectively even if the additive is used in low concentrations, thereby improving LER, resulting in excellent profiles and lowering optimum irradiation energies. wherein, R1, R2, R3, R4 and k are as defined herein.
摘要翻译：用于防止在光刻工艺过程中在曝光区域产生的酸扩散到未曝光区域的光刻胶添加剂，含有该光致抗蚀剂组合物的光致抗蚀剂组合物和使用其形成光致抗蚀剂图案的方法。包含所公开的添加剂的光致抗蚀剂组合物即使以低浓度使用添加剂也能有效地防止酸扩散，从而改善LER，导致优异的轮廓并降低最佳照射能量。其中R1，R2，R3，R4和k如本文所定义。

3. 发明授权

US06749990B2 Chemical amplification photoresist monomers, polymers therefrom and photoresist compositions containing the same 失效
标题翻译：化学扩增光致抗蚀剂单体，聚合物和含有它们的光致抗蚀剂组合物
公开(公告)号：US06749990B2
公开(公告)日：2004-06-15
申请号：US10054095
申请日：2002-01-22
申请人： Jae Chang Jung , Geun Su Lee , Ki Soo Shin
发明人： Jae Chang Jung , Geun Su Lee , Ki Soo Shin
IPC分类号： G03F7004
CPC分类号： G03F7/0395 , G03F7/0046 , Y10S430/108
摘要： A chemical amplification photoresist monomer, a photoresist polymer prepared thereof, and a photoresist composition using the polymer. More specifically, a chemical amplification photoresist polymer comprising a fluorine-containing monomer represented by Chemical Formula 1, and a composition comprising the polymer. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. As the composition has low light absorbance at 193 nm and 157 nm wavelength, it is very useful for forming ultramicro pattern in the process using a light source of far ultraviolet, especially of VUV (157 nm). In the Formula, R1, R2, R3 and R4 is defined in the specification.
摘要翻译：化学扩增光致抗蚀剂单体，其制备的光致抗蚀剂聚合物和使用该聚合物的光致抗蚀剂组合物。更具体地说，包括由化学式1表示的含氟单体的化学扩增光致抗蚀剂聚合物和包含该聚合物的组合物。光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性，并且可在四甲基氢氧化铵（TMAH）解。由于组合物在193nm和157nm波长处具有低吸光度，因此在使用远紫外光源（尤其是VUV（157nm））的方法中形成超微图案非常有用。在式中，R1，R2， R3和R4在本说明书中定义。

4. 发明授权

US06653047B2 Photoresist monomers containing fluorine-substituted benzylcarboxylate and photoresist polymers comprising the same 失效
标题翻译：含有氟取代的苄基羧酸酯的光致抗蚀剂单体和包含其的光致抗蚀剂聚合物
公开(公告)号：US06653047B2
公开(公告)日：2003-11-25
申请号：US10107650
申请日：2002-03-27
申请人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin
发明人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin
IPC分类号： G03F7004
CPC分类号： G03F7/0395 , G03F7/0046 , Y10S430/106
摘要： Photoresist monomers, photoresist polymers prepared therefrom, and photoresist compositions using the polymers are disclosed. More specifically, photoresist polymers comprising a photoresist monomer containing fluorine-substituted benzylcarboxylate represented by Formula 1, and a composition comprising the polymer are disclosed. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and can be developed in aqueous tetramethylammonium hydroxide (TMAH) solution. And, the present photoresist composition is suitable to form a fine pattern using deep ultraviolet light source such as VUV (157 nm), since the composition has low light absorbance at 193 nm and 157 nm wavelength. wherein, X1, X2, R1, l and m are defined in the specification.
摘要翻译：公开了光阻单体，由其制备的光致抗蚀剂聚合物和使用该聚合物的光致抗蚀剂组合物。更具体地，公开了包含由式1表示的含氟取代的苄基羧酸酯的光致抗蚀剂单体的光致抗蚀剂聚合物和包含该聚合物的组合物。光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性，并且可以在四甲基氢氧化铵（TMAH）水溶液中显影。并且，本发明的光致抗蚀剂组合物适合于使用深紫外光源如VUV（157nm）形成精细图案，因为该组合物在193nm和157nm波长处具有低吸光度。其中X1，X2，R1，l 和m在说明书中定义。

5. 发明授权

US06613493B2 Photoresist polymer and composition having nitro groups 失效
标题翻译：光致抗蚀剂聚合物和具有硝基的组合物
公开(公告)号：US06613493B2
公开(公告)日：2003-09-02
申请号：US10037515
申请日：2002-01-04
申请人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin
发明人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin
IPC分类号： G03F7004
CPC分类号： G03F7/0392 , Y10S430/106
摘要： Photoresist polymers having nitro groups (—NO2), and photoresist compositions containing the same. A photoresist pattern having excellent endurance, etching resistance, reproducibility and resolution can be formed by the use of the photoresist copolymer comprising polymerization repeating units represented by Chemical Formula 1a or 1b: wherein, R1, a, b, c, d, e, f, g and h is defined in the specification. Having nitro groups in the polymer, the photoresist polymer results in a low absorbance in the range of 157 nm wavelength, so that it is extremely useful for a photolithography process using, in particular, VUV light source.
摘要翻译：具有硝基（-NO 2）的光致抗蚀剂聚合物和含有它们的光致抗蚀剂组合物。可以通过使用由化学式1a或1b表示的聚合重复单元的光致抗蚀剂共聚物形成具有优异的耐久性，耐蚀刻性，再现性和分辨率的光致抗蚀剂图案：其中，R1，a，b，c，d，e，f g和h在本说明书中定义。在聚合物中具有硝基，光致抗蚀剂聚合物在157nm波长范围内导致低吸光度，因此其对于使用特别是VUV光的光刻工艺非常有用资源。

6. 发明授权

US06806025B2 Photoresist monomers, polymers thereof and photoresist compositons containing the same 失效
标题翻译：光致抗蚀剂单体，其聚合物和含有它们的光致抗蚀剂组合物
公开(公告)号：US06806025B2
公开(公告)日：2004-10-19
申请号：US10079348
申请日：2002-02-20
申请人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin
发明人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin
IPC分类号： G03F7004
CPC分类号： C07D493/08 , C07C17/30 , C07D495/08 , G03F7/0046 , G03F7/0395 , Y02P20/55 , C07C23/18
摘要： Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness to a wafer, and is developable in aqueous tetramethylammonium hydroxide (TMAH) solution. In addition, the photoresist composition has low light absorbance at 157 nm wavelength, and thus is suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) in fabricating a minute circuit for a high integration semiconductor device. wherein, X1, X2, Y1, Y2, Y3, Y4, Y5, Y6, Y7, Y8, l and m are as defined in the specification of the invention.
摘要翻译：下列通式1的光致抗蚀剂单体，其光致抗蚀剂聚合物和含有它们的光致抗蚀剂组合物。光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和对晶片的粘合性，并且可在四甲基氢氧化铵（TMAH）水溶液中显影。此外，光致抗蚀剂组合物在157nm波长处具有低吸光度，因此适用于在制造用于高集成半导体器件的微小电路中使用诸如VUV（157nm）的紫外光源的光刻工艺。其中，X1， X2，Y1，Y2，Y3，Y4，Y5，Y6，Y7，Y8，I和m如本发明的说明书中所定义。

7. 发明授权

US06720129B2 Maleimide-photoresist polymers containing fluorine and photoresist compositions comprising the same 失效
标题翻译：含有氟的马来酰亚胺光致抗蚀剂聚合物和包含其的光致抗蚀剂组合物
公开(公告)号：US06720129B2
公开(公告)日：2004-04-13
申请号：US10107659
申请日：2002-03-27
申请人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin
发明人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin
IPC分类号： G03P7004
CPC分类号： G03F7/0046 , G03F7/0397 , Y10S430/108
摘要： Photoresist polymers, and photoresist compositions using the polymer are disclosed. More specifically, photoresist polymers containing maleimide represented by Formula 1. Photoresist compositions including the photoresist polymers have excellent etching resistance, heat resistance and adhesiveness, and development ability in aqueous tetramethylammonium hydroxide (TMAH) solution. As the compositions have low light absorbance at 193 nm and 157 nm wavelength, they are suitable for a process using ultraviolet light source such as VUV (157 nm). wherein, 1, R1, R2, R3, R, R′, R″, R″′, X, a and b are defined in the specification.
摘要翻译：公开了使用聚合物的光致抗蚀剂聚合物和光致抗蚀剂组合物。更具体地，含有由式1表示的马来酰亚胺的光致抗蚀剂聚合物。包含光致抗蚀剂聚合物的光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性以及四甲基氢氧化铵（TMAH）水溶液的显影能力。由于组合物在193nm和157nm波长处具有低吸光度，它们适用于使用诸如VUV（157nm）的紫外光源的方法，其中1，R1，R2，R3，R，R'，R' '，R“'，X，a和b在说明书中定义。

8. 发明授权

US07563753B2 Cleaning solution for removing photoresist 有权
标题翻译：用于除去光致抗蚀剂的清洁溶液
公开(公告)号：US07563753B2
公开(公告)日：2009-07-21
申请号：US10317578
申请日：2002-12-12
申请人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin , Keun Kyu Kong , Sung Koo Lee , Young Sun Hwang
发明人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin , Keun Kyu Kong , Sung Koo Lee , Young Sun Hwang
IPC分类号： C11D7/50
CPC分类号： C11D3/3738 , C11D1/44 , C11D1/72 , C11D1/721 , C11D1/722 , C11D3/373 , C11D3/3742 , C11D7/263 , C11D7/265 , C11D7/267 , C11D7/3218 , C11D7/34 , C11D11/0047 , G03F7/422
摘要： Cleaning solutions for removing photoresist resins and a method of forming patterns using the same are disclosed. The cleaning solution includes water (H2O) as main component, one or more surfactants as additive selected from the group consisting of polyoxyalkylene compounds, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having carboxylic acid (—COOH) group, a salt of alcohol amine of Formula 1 and hydrocarbon compounds having sulfonic acid (—SO3H) group, polyethylene glycol compounds, compounds of Formula 3, compounds having a molecular weight ranging from 1000 to 10000 including repeating unit of Formula 4, polyether denatured silicon compounds and alcohol compounds. wherein R1, R2, R3, R4, R5, A, l and n are defined in the specification.
摘要翻译：公开了用于除去光致抗蚀剂树脂的清洁溶液和使用其形成图案的方法。清洗溶液包括作为主要成分的水（H 2 O），一种或多种作为添加剂的表面活性剂，其选自聚氧化烯化合物，式1的醇胺盐和具有羧酸（-COOH）基团的烃化合物，式1的醇胺和具有磺酸（-SO 3 H）基团的烃化合物，聚乙二醇化合物，式3化合物，分子量为1000至10000的化合物，包括式4的重复单元，聚醚变性硅化合物和醇化合物。其中R1，R2，R3，R4，R5，A，1和n在本说明书中定义。

9. 发明授权

US07138218B2 Process for forming an ultra fine pattern using a bottom anti-reflective coating film containing an acid generator 有权
公开(公告)号：US07138218B2
公开(公告)日：2006-11-21
申请号：US10321123
申请日：2002-12-17
申请人： Sung Koo Lee , Jae Chang Jung , Geun Su Lee , Ki Soo Shin
发明人： Sung Koo Lee , Jae Chang Jung , Geun Su Lee , Ki Soo Shin
IPC分类号： G03F7/004
CPC分类号： G03F7/0392 , G03F7/0045 , G03F7/091 , Y10S430/114 , Y10S430/119 , Y10S430/12 , Y10S430/151
摘要： A process of forming ultra fine patterns using bottom anti-reflective coating containing acid generator. More particularly, a process of forming vertical patterns using an organic bottom anti-reflective coating containing excessive amount of acid generator, in order to prevent formation of sloping patterns due to photoresist resins absorbing wavelength of light used as light sources during lithography process using light sources such as KrF, ArF, VUV, EUV, E-beam and ion beam, even when photoresist resins having high absorbance to light source are used.

10. 发明授权

US06849375B2 Photoresist monomers, polymers thereof and photoresist compositions containing the same 有权
标题翻译：光致抗蚀剂单体，其聚合物和含有它们的光致抗蚀剂组合物
公开(公告)号：US06849375B2
公开(公告)日：2005-02-01
申请号：US10080319
申请日：2002-02-21
申请人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin
发明人： Geun Su Lee , Jae Chang Jung , Ki Soo Shin
IPC分类号： G03F7/004 , G03F7/039
CPC分类号： G03F7/0395 , G03F7/0046 , G03F7/0392 , G03F7/0397 , Y10S430/114
摘要： Photoresist monomers of following Formula 1, photoresist polymers thereof, and photoresist compositions containing the same. The photoresist polymers include a repeating unit comprising the photoresist monomer of Formula 1 as a comonomer and the photoresist compositions containing the same have excellent etching resistance, heat resistance and adhesiveness to a wafer, and are developable in aqueous tetramethylammonium hydroxide (TMAH) solutions. In addition, the photoresist compositions have a low light absorbance at 157 nm wavelength, and thus are suitable for a photolithography process using ultraviolet light sources such as VUV (157 nm) in fabricating a minute circuit for a high integration semiconductor device. wherein Y1, Y2, Y3, Y4, Y5, Y6, Z1, Z2 and m are defined in the specification.
摘要翻译：下列通式1的光致抗蚀剂单体，其光致抗蚀剂聚合物和含有它们的光致抗蚀剂组合物。光致抗蚀剂聚合物包括包含作为共聚单体的式1的光致抗蚀剂单体的重复单元，并且含有该光致抗蚀剂组合物的光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和与晶片的粘合性，并且可在四甲基氢氧化铵（TMAH）水溶液中显影。此外，光致抗蚀剂组合物在157nm波长处具有低吸光度，因此适用于在制造用于高集成度半导体器件的微小电路中使用诸如VUV（157nm）的紫外光源的光刻工艺。在Y1， Y2，Y3，Y4，Y5，Y6，Z1，Z2和m在本说明书中定义。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式