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    • 6. 发明授权
    • Method for fabricating flash memory device and peripheral area
    • 制造闪存器件和周边区域的方法
    • US06235585B1
    • 2001-05-22
    • US09306436
    • 1999-05-06
    • Sung Chul LeeJae Seung Choi
    • Sung Chul LeeJae Seung Choi
    • H01L218247
    • H01L27/11526H01L27/11536Y10S438/981
    • Methods for fabricating a flash memory device which improves both charge retaining characteristics and characteristics of a gate insulating film are disclosed. The methods include the steps of respectively forming a tunneling oxide film and a peripheral oxide film on a cell and peripheral areas of a semiconductor substrate; forming a floating gate line on the tunneling oxide film; forming a first insulating film on a surface of the floating gate line; forming a second insulating film on an entire surface of the semiconductor substrate; forming a third insulating film on the second insulating film so that the third insulating film is thicker than the peripheral oxide film; removing the third insulating film and the second insulating film from the peripheral area by wet etching processes; removing the peripheral oxide film by a wet etching process; forming a gate insulating film on the surface of the semiconductor substrate in the peripheral area; depositing a conductive layer on the entire surface of the semiconductor substrate; selectively removing portions of the conductive layer, the third insulating film, the second insulating film, the first insulating film, and the floating gate line to form a control gate and a floating gate in the cell area, and a gate electrode of a thin film transistor in the peripheral area; and forming source/drain impurity areas within the surface of the semiconductor substrate at both sides of the control gate and floating gate and at both sides of the gate electrode.
    • 公开了一种提高栅极绝缘膜的电荷保持特性和特性的闪存器件的制造方法。 这些方法包括在半导体衬底的单元和外围区域上分别形成隧穿氧化物膜和周围氧化膜的步骤; 在隧道氧化膜上形成浮栅; 在所述浮栅线的表面上形成第一绝缘膜; 在所述半导体衬底的整个表面上形成第二绝缘膜; 在所述第二绝缘膜上形成第三绝缘膜,使得所述第三绝缘膜比所述周边氧化膜厚; 通过湿法蚀刻工艺从周边区域去除第三绝缘膜和第二绝缘膜; 通过湿蚀刻工艺去除周围氧化膜; 在周边区域的半导体衬底的表面上形成栅极绝缘膜; 在所述半导体衬底的整个表面上沉积导电层; 选择性地去除所述导电层,所述第三绝缘膜,所述第二绝缘膜,所述第一绝缘膜和所述浮栅的部分,以在所述单元区域中形成控制栅极和浮置栅极,以及薄膜的栅电极 晶体管在周边区域; 以及在所述半导体衬底的所述表面内的所述控制栅极和浮置栅极的两侧以及所述栅电极的两侧处形成源极/漏极杂质区域。
    • 7. 发明申请
    • UV FLUID STERILIZER SUITABLE TO STERILIZE FLUID HAVING POOR UV TRANSMISSION
    • UV流体灭菌器适用于消毒紫外线传输不良的流体
    • US20130026389A1
    • 2013-01-31
    • US13639764
    • 2010-11-01
    • Sung Chul LeeJin Auck KimYu Sup Kim
    • Sung Chul LeeJin Auck KimYu Sup Kim
    • A61L2/10C02F1/32
    • A61L2/10A23L3/28C02F1/325C02F1/72C02F2201/3227C02F2301/024C02F2301/026C02F2303/04
    • The present invention relates to a UV fluid sterilizer, which is suitably formed to sterilize fluid having poor UV transmission. According to the present invention, the UV fluid sterilizer includes a plurality of UV sterilization units. The UV sterilization units include: small quartz tubes; inside UV lamps mounted in the small quartz tubes for radiating UV rays at the inside of fluid; large quartz tubes concentrically mounted outside the small quartz tubes for forming the flow spaces of the fluid; spring type coils spirally fixed to the outer diameter surfaces of the small quartz tubes for applying rotation force to the fluid; and UV transmission shrinks films for fixing the spring type coils to the outer diameter surfaces of the small quartz tubes in close contact and preventing foreign substances from being trapped in the flow spaces of the fluid, and are characterized in that a plurality of outside UV lamps are provided outside the large quartz tubes for radiating UV rays to the fluid, which flows through the UV sterilization units, from the outside.
    • 本发明涉及一种UV流体灭菌器,其被适当地形成为对具有差的UV透射率的流体进行消毒。 根据本发明,UV流体灭菌器包括多个UV灭菌单元。 UV灭菌装置包括:小型石英管; 安装在小石英管内的紫外灯内部,用于在流体内部辐射紫外线; 同心安装在小石英管外部的大型石英管,用于形成流体的流动空间; 弹簧式线圈螺旋地固定到小石英管的外径表面上,用于向流体施加旋转力; 并且紫外线传输收缩用于将弹簧型线圈固定到小石英管的外径表面的膜紧密接触,并防止异物被捕获在流体的流动空间中,并且其特征在于,多个外部UV灯 设置在大石英管的外部,用于从外部向流过UV灭菌单元的流体辐射紫外线。