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1. 发明申请

US20180123025A1 MAGNETIC MEMORY DEVICE 审中-公开
公开(公告)号：US20180123025A1
公开(公告)日：2018-05-03
申请号：US15617012
申请日：2017-06-08
申请人： Sung Chul Lee , Ki Woong Kim , Sang Hwan Park , Sechung Oh
发明人： Sung Chul Lee , Ki Woong Kim , Sang Hwan Park , Sechung Oh
IPC分类号： H01L43/08 , H01L43/10 , H01L43/12 , H01F10/32 , H01F10/12
CPC分类号： H01L43/08 , H01F10/12 , H01F10/3204 , H01L43/10 , H01L43/12
摘要： A magnetic memory device includes a reference magnetic structure, a free magnetic structure, and a tunnel barrier pattern between the reference magnetic structure and the free magnetic structure. The reference magnetic structure includes a first pinned pattern, a second pinned pattern between the first pinned pattern and the tunnel barrier pattern, and an exchange coupling pattern between the first and the second pinned pattern. The second pinned pattern includes a first magnetic pattern adjacent the exchange coupling pattern, a second magnetic pattern adjacent the tunnel barrier pattern, a third magnetic pattern between the first and the second magnetic pattern, a first non-magnetic pattern between the first and the third magnetic pattern, and a second non-magnetic pattern between the second and the third magnetic pattern. The first non-magnetic pattern has a different crystal structure from the second non-magnetic pattern, and at least a portion of the third magnetic pattern is amorphous.

2. 发明授权

US09530478B2 Memory device using spin hall effect and methods of manufacturing and operating the memory device 有权
标题翻译：使用旋转霍尔效应的存储器件以及制造和操作存储器件的方法
公开(公告)号：US09530478B2
公开(公告)日：2016-12-27
申请号：US14162144
申请日：2014-01-23
申请人： Ung-hwan Pi , Kwang-seok Kim , Kee-won Kim , Sung-chul Lee , Young-man Jang
发明人： Ung-hwan Pi , Kwang-seok Kim , Kee-won Kim , Sung-chul Lee , Young-man Jang
IPC分类号： G11C11/00 , G11C11/16 , H01L43/08 , H01L27/22 , G11C11/18
CPC分类号： G11C11/1675 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/18 , H01L27/222 , H01L43/08
摘要： A memory device using a spin hall effect, and methods of manufacturing and operating the memory device, include applying a first operational current to a bit line of the memory device such that a spin current is applied to a magnetic tunnel junction (MTJ) cell coupled to the bit line due to a material in the bit line, wherein the bit line is electrically connected to a word line via the MTJ cell, and the word line intersects the bit line.
摘要翻译：使用旋转门厅效应的存储器件以及制造和操作存储器件的方法包括将第一工作电流施加到存储器件的位线，使得自旋电流被施加到耦合到磁性隧道结（MTJ）的单元由于位线中的材料而导致位线，其中位线经由MTJ单元电连接到字线，并且字线与位线相交。

3. 发明申请

US20160163369A1 MAGNETIC MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：磁记忆体装置及其制造方法
公开(公告)号：US20160163369A1
公开(公告)日：2016-06-09
申请号：US14957550
申请日：2015-12-02
申请人： Kilho LEE , KyungTae NAM , Sung Chul LEE
发明人： Kilho LEE , KyungTae NAM , Sung Chul LEE
IPC分类号： G11C11/16 , H01L43/08 , H01L27/22 , H01L43/02
CPC分类号： G11C11/161 , H01L27/228 , H01L43/08 , H01L43/12
摘要： Provided is a semiconductor device including magnetic tunnel junctions, which are spaced apart from each other on a substrate, and each of which includes a free magnetic pattern, a first pinned magnetic pattern, and a tunnel barrier pattern therebetween. The semiconductor device further includes a separation structure interposed between the magnetic tunnel junctions. The separation structure includes a second pinned magnetic pattern and a first insulating pattern stacked to each other.
摘要翻译：提供了一种半导体器件，其包括在衬底上彼此间隔开的磁性隧道结，并且其中每一个包括自由磁性图案，第一钉扎磁性图案和它们之间的隧道屏障图案。半导体器件还包括插入在磁性隧道结之间的分离结构。分离结构包括彼此堆叠的第二钉扎磁性图案和第一绝缘图案。

4. 发明授权

US08847692B2 Oscillators and method of operating the same 有权
标题翻译：振荡器和操作方法相同
公开(公告)号：US08847692B2
公开(公告)日：2014-09-30
申请号：US13174932
申请日：2011-07-01
申请人： Ung-hwan Pi , Sun-ae Seo , Kee-won Kim , In-jun Hwang , Kwang-seok Kim , Sung-chul Lee
发明人： Ung-hwan Pi , Sun-ae Seo , Kee-won Kim , In-jun Hwang , Kwang-seok Kim , Sung-chul Lee
IPC分类号： H03B15/00
CPC分类号： H03B15/006
摘要： Oscillators and method of operating the same are provided, the oscillators include a magnetic layer, and a magnetization fixing element configured to fix a magnetization direction of the magnetic layer. The oscillators generate a signal by using precession of a magnetic moment of the magnetic layer.
摘要翻译：提供了振荡器及其操作方法，所述振荡器包括磁性层和构造成固定磁性层的磁化方向的磁化固定元件。振荡器通过使用磁性层的磁矩的进动来产生信号。

5. 发明申请

US20140252519A1 MAGNETORESISTIVE STRUCTURES, MAGNETIC RANDOM-ACCESS MEMORY DEVICES INCLUDING THE SAME AND METHODS OF MANUFACTURING THE MAGNETORESISTIVE STRUCTURE 有权
标题翻译：磁体结构，包括其的磁性随机存取存储器件及制造磁阻结构的方法
公开(公告)号：US20140252519A1
公开(公告)日：2014-09-11
申请号：US14167553
申请日：2014-01-29
申请人： Kee-won KIM , Kwang-seok KIM , Sung-chul LEE , Young-man JANG , Ung-hwan PI
发明人： Kee-won KIM , Kwang-seok KIM , Sung-chul LEE , Young-man JANG , Ung-hwan PI
IPC分类号： H01L43/02 , H01L27/22
CPC分类号： H01L43/12 , G11C11/161 , H01L27/228 , H01L43/08
摘要： Magnetoresistive structures, magnetic random-access memory devices including the same, and methods of manufacturing the magnetoresistive structure, include a first magnetic layer having a magnetization direction that is fixed, a second magnetic layer corresponding to the first magnetic layer, wherein a magnetization direction of the second magnetic layer is changeable, and a magnetoresistance (MR) enhancing layer and an intermediate layer both between the first magnetic layer and the second magnetic layer.
摘要翻译：磁阻结构，包括该磁阻结构的磁性随机存取存储器以及制造磁阻结构的方法包括具有固定的磁化方向的第一磁性层，与第一磁性层对应的第二磁性层，第二磁性层是可变的，以及在第一磁性层和第二磁性层之间的磁阻（MR）增强层和中间层。

6. 发明授权

US08803752B2 Omnidirectional antenna 有权
标题翻译：全向天线
公开(公告)号：US08803752B2
公开(公告)日：2014-08-12
申请号：US12525308
申请日：2008-01-23
申请人： Sung-Chul Lee
发明人： Sung-Chul Lee
IPC分类号： H01Q1/36 , H01Q9/06
CPC分类号： H01Q1/36 , H01Q9/40
摘要： The omnidirectional antenna of the present invention comprises a dielectric core 20 of ceramic material which has a longitudinal hole 21 formed in the center; a strip line 30 which is bent to fit the circumference of the dielectric core 20 by a press-forming method and is covered over the upper outer circumference of the dielectric core; a lower cap 40 which is inserted over the bottom end of the dielectric core and has a hole formed at the center of the bottom; a feeder 50 which is passed through and inserted from down to up into the holes formed in the bottom cap and the dielectric core and the top end of which is connected with the strip line 30 on the upper surface of the dielectric core; and a strip line fixing means 60 for combining the lower cap and strip line to the dielectric core.
摘要翻译：本发明的全向天线包括陶瓷材料的介质芯20，其具有形成在中心的纵向孔21; 带状线30，其通过压制成型方法弯曲成与电介质芯20的圆周相配合，并且覆盖在电介质芯的上外周上; 下盖40，其插入在电介质芯的底端上并且具有形成在底部中心的孔; 进料器50，其从下到上穿过并插入到形成在底盖和介质芯中的孔中，并且其顶端与介电芯的上表面上的带状线30连接; 以及用于将下盖和带状线组合到电介质芯的带状线固定装置60。

7. 发明授权

US08803266B2 Storage nodes, magnetic memory devices, and methods of manufacturing the same 有权
标题翻译：存储节点，磁存储器件及其制造方法
公开(公告)号：US08803266B2
公开(公告)日：2014-08-12
申请号：US13313361
申请日：2011-12-07
申请人： Kwang-seok Kim , U-In Chung , Jai-kwang Shin , Kee-won Kim , Sung-chul Lee , Ung-hwan Pi
发明人： Kwang-seok Kim , U-In Chung , Jai-kwang Shin , Kee-won Kim , Sung-chul Lee , Ung-hwan Pi
IPC分类号： H01L29/72
CPC分类号： H01L27/228 , G11C11/161 , H01L29/82 , H01L43/08 , H01L43/12
摘要： A storage node of a magnetic memory device includes: a lower magnetic layer, a tunnel barrier layer formed on the lower magnetic layer, and a free magnetic layer formed on the tunnel barrier. The free magnetic layer has a magnetization direction that is switchable in response to a spin current. The free magnetic layer has a cap structure surrounding at least one material layer on which the free magnetic layer is formed.
摘要翻译：磁存储器件的存储节点包括：下磁层，形成在下磁层上的隧道势垒层和形成在隧道势垒上的自由磁层。自由磁性层具有响应于自旋电流而可切换的磁化方向。自由磁性层具有围绕形成有自由磁性层的至少一个材料层的盖结构。

8. 发明授权

US08598957B2 Oscillators and methods of manufacturing and operating the same 有权
标题翻译：振荡器和制造和操作方法相同
公开(公告)号：US08598957B2
公开(公告)日：2013-12-03
申请号：US13208061
申请日：2011-08-11
申请人： Sung-chul Lee , Ung-hwan Pi , Kee-won Kim , Kwang-seok Kim
发明人： Sung-chul Lee , Ung-hwan Pi , Kee-won Kim , Kwang-seok Kim
IPC分类号： H03B1/00 , H01L29/82 , B32B7/02
CPC分类号： H03B15/006 , H01L27/22
摘要： Oscillators and methods of manufacturing and operating an oscillator are provided, the oscillators include a base free layer having a variable magnetization direction, and at least one oscillation unit on the base free layer. The oscillation unit may include a free layer element contacting the base free layer and having a width less than a width of the base free layer, a pinned layer element separated from the free layer element, and a separation layer element between the free layer element and the pinned layer element. A plurality of oscillation units may be arranged on the base free layer.
摘要翻译：提供振荡器和制造和操作振荡器的方法，所述振荡器包括具有可变磁化方向的基底自由层和在所述基底自由层上的至少一个振荡单元。振荡单元可以包括与基底自由层接触并具有小于基底自由层的宽度的自由层元件，与自由层元件分离的钉扎层元件，以及在自由层元件和固定层元素。多个振荡单元可以布置在基底自由层上。

9. 发明授权

US08537506B2 Information storage device with domain wall moving unit and magneto-resistive device magnetization arrangement 有权
标题翻译：具有域壁移动单元和磁阻装置磁化布置的信息存储装置
公开(公告)号：US08537506B2
公开(公告)日：2013-09-17
申请号：US12801712
申请日：2010-06-22
申请人： Ji-young Bae , Sung-chul Lee , Sun-ae Seo , Young-jin Cho , Ung-hwan Pi , Jin-seong Heo
发明人： Ji-young Bae , Sung-chul Lee , Sun-ae Seo , Young-jin Cho , Ung-hwan Pi , Jin-seong Heo
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y25/00 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C19/0808 , H01L43/08
摘要： An information storage device includes a magnetic track and a magnetic domain wall moving unit. The magnetic track has a plurality of magnetic domains and a magnetic domain wall between each pair of adjacent magnetic domains. The magnetic domain wall moving unit is configured to move at least the magnetic domain wall. The information storage device further includes a magneto-resistive device configured to read information recorded on the magnetic track. The magneto-resistive device includes a pinned layer, a free layer and a separation layer arranged there between. The pinned layer has a fixed magnetization direction. The free layer is disposed between the pinned layer and the magnetic track, and has a magnetization easy axis, which is non-parallel to the magnetization direction of the pinned layer.
摘要翻译：信息存储装置包括磁道和磁畴壁移动单元。磁道在每对相邻磁畴之间具有多个磁畴和磁畴壁。磁畴壁移动单元构造成至少移动磁畴壁。信息存储装置还包括被配置为读取记录在磁道上的信息的磁阻装置。磁阻装置包括钉扎层，自由层和布置在其间的分离层。被钉扎层具有固定的磁化方向。自由层设置在被钉扎层和磁迹之间，并且具有与被钉扎层的磁化方向不平行的易磁化轴。

10. 发明授权

US08525126B2 UV fluid sterilizer suitable to sterilize fluid having poor UV transmission 有权
标题翻译： UV流体灭菌器适用于对紫外线透过差的液体进行灭菌
公开(公告)号：US08525126B2
公开(公告)日：2013-09-03
申请号：US13639764
申请日：2010-11-01
申请人： Sung Chul Lee , Jin Auck Kim , Yu Sup Kim
发明人： Sung Chul Lee , Jin Auck Kim , Yu Sup Kim
IPC分类号： C02F1/32 , G01N21/33 , A61L2/10
CPC分类号： A61L2/10 , A23L3/28 , C02F1/325 , C02F1/72 , C02F2201/3227 , C02F2301/024 , C02F2301/026 , C02F2303/04
摘要： The present invention relates to a UV fluid sterilizer, which is suitably formed to sterilize fluid having poor UV transmission. According to the present invention, the UV fluid sterilizer includes a plurality of UV sterilization units. The UV sterilization units include: small quartz tubes; inside UV lamps mounted in the small quartz tubes for radiating UV rays at the inside of fluid; large quartz tubes concentrically mounted outside the small quartz tubes for forming the flow spaces of the fluid; spring type coils spirally fixed to the outer diameter surfaces of the small quartz tubes for applying rotation force to the fluid; and UV transmission shrinks films for fixing the spring type coils to the outer diameter surfaces of the small quartz tubes in close contact and preventing foreign substances from being trapped in the flow spaces of the fluid, and are characterized in that a plurality of outside UV lamps are provided outside the large quartz tubes for radiating UV rays to the fluid, which flows through the UV sterilization units, from the outside.
摘要翻译：本发明涉及一种UV流体灭菌器，其被适当地形成为对具有差的UV透射率的流体进行消毒。根据本发明，UV流体灭菌器包括多个UV灭菌单元。 UV灭菌装置包括：小型石英管; 安装在小石英管内的紫外灯内部，用于在流体内部辐射紫外线; 同心安装在小石英管外部的大型石英管，用于形成流体的流动空间; 弹簧式线圈螺旋地固定到小石英管的外径表面上，用于向流体施加旋转力; 并且紫外线传输收缩用于将弹簧型线圈固定到小石英管的外径表面的膜紧密接触，并防止异物被捕获在流体的流动空间中，并且其特征在于，多个外部UV灯设置在大石英管的外部，用于从外部向流过UV灭菌单元的流体辐射紫外线。

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