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1. 发明申请

US20050067663A1 Oxide-nitride stack gate dielectric 有权
标题翻译：氧化氮化物堆叠栅极电介质
公开(公告)号：US20050067663A1
公开(公告)日：2005-03-31
申请号：US10950332
申请日：2004-09-24
申请人： Krishnaswamy Ramkumar , Sundar Narayanan
发明人： Krishnaswamy Ramkumar , Sundar Narayanan
IPC分类号： H01L21/28 , H01L21/314 , H01L29/49 , H01L29/78 , H01L21/20
CPC分类号： H01L21/022 , H01L21/0217 , H01L21/02233 , H01L21/02337 , H01L21/28044 , H01L21/3144 , H01L29/4941 , H01L29/78
摘要： A method of making a semiconductor structure comprises forming an oxide layer on a substrate; forming a silicon nitride layer on the oxide layer; annealing the layers in NO; and annealing the layers in ammonia. The equivalent oxide thickness of the oxide layer and the silicon nitride layer together is at most 25 Angstroms.
摘要翻译：制造半导体结构的方法包括在衬底上形成氧化物层; 在氧化物层上形成氮化硅层; 在NO中退火层; 并在氨中退火层。氧化物层和氮化硅层的等效氧化物厚度在一起为至多25埃。

2. 发明授权

US06803321B1 Nitride spacer formation 有权
标题翻译：氮化物间隔物形成
公开(公告)号：US06803321B1
公开(公告)日：2004-10-12
申请号：US10313049
申请日：2002-12-06
申请人： Alain Blosse , Krishnaswamy Ramkumar , Sundar Narayanan
发明人： Alain Blosse , Krishnaswamy Ramkumar , Sundar Narayanan
IPC分类号： H01I21302
CPC分类号： H01L21/76897 , H01L21/28247 , H01L21/31116 , H01L21/3185
摘要： A method of forming a semiconductor structure comprises forming a nitride layer on a stack, and etching the nitride layer to form spacers in contact with sides of the stack. The stack is on a semiconductor substrate, the stack comprises (i) a gate layer, comprising silicon, (ii) a metallic layer, on the gate layer, and (iii) an etch-stop layer, on the metallic layer. The forming is by CVD with a gas comprising SixL2x, L is an amino group, and X is 1 or 2.
摘要翻译：形成半导体结构的方法包括在叠层上形成氮化物层，并蚀刻氮化物层以形成与堆叠的侧面接触的间隔物。叠层在半导体衬底上，堆叠包括（i）栅极层，包括硅，（ii）栅极层上的金属层，和（iii）金属层上的蚀刻停止层。通过CVD形成气体，其中包含SixL2x的气体，L是氨基，X是1或2。

3. 发明授权

US06773975B1 Formation of a shallow trench isolation structure in integrated circuits 有权
标题翻译：在集成电路中形成浅沟槽隔离结构
公开(公告)号：US06773975B1
公开(公告)日：2004-08-10
申请号：US10326707
申请日：2002-12-20
申请人： Krishnaswamy Ramkumar , Sundar Narayanan , Shahin Sharifzadeh
发明人： Krishnaswamy Ramkumar , Sundar Narayanan , Shahin Sharifzadeh
IPC分类号： H01L218238
CPC分类号： H01L21/823481 , H01L21/76229
摘要： In one embodiment, a transistor is fabricated by forming gate materials, such as a gate oxide layer and a gate polysilicon layer, prior to forming a shallow trench isolation (STI) structure. Forming the gate materials early in the process minimizes exposure of the STI structure to processing steps that may expose its corners. Also, to minimize cross-diffusion of dopants and to help lower gate resistance, a metal stack comprising a barrier layer and a metal layer may be employed as a conductive line between gates. In one embodiment, the metal stack comprises a barrier layer of tungsten-nitride and a metal layer of tungsten.
摘要翻译：在一个实施例中，在形成浅沟槽隔离（STI）结构之前，通过形成栅极材料，例如栅极氧化物层和栅极多晶硅层来制造晶体管。在此过程早期形成栅极材料可最大限度地减少STI结构暴露其角落的处理步骤。此外，为了最小化掺杂剂的交叉扩散并有助于降低栅极电阻，可以使用包括阻挡层和金属层的金属堆叠作为栅极之间的导电线。在一个实施例中，金属堆叠包括氮化钨的阻挡层和钨的金属层。

4. 发明授权

US06774012B1 Furnace system and method for selectively oxidizing a sidewall surface of a gate conductor by oxidizing a silicon sidewall in lieu of a refractory metal sidewall 有权
$Furnace system and method for selectively oxidizing a sidewall surface of a gate conductor by oxidizing a silicon sidewall in lieu of a refractory metal sidewall$
标题翻译：炉系统和方法，用于通过氧化硅侧壁代替难熔金属侧壁来选择性地氧化栅极导体的侧壁表面
公开(公告)号：US06774012B1
公开(公告)日：2004-08-10
申请号：US10290841
申请日：2002-11-08
申请人： Sundar Narayanan
发明人： Sundar Narayanan
IPC分类号： H01L21322
CPC分类号： H01L21/67109 , H01L21/28247
摘要： An improved furnace system and method is provided to substantially minimize, if not eliminate, ambient air from entering a heated chamber of the furnace system during a critical processing step. The furnace system can be used in, for example, an oxidation step where ambient air containing oxygen is prevented from entering an atmospheric pressure tube by essentially purging potential leak areas with an inert gas, such as nitrogen, at the critical moment during temperature ramp up and ramp down, and prior to temperature stabilization and the introduction of an oxidizing gas. If oxygen is not present within the tube, then a tungsten sidewall surface of a gate conductor, for example, will not inadvertently oxidize at the critical pre- and post-oxidation moments. However, if steam is present where hydrogen is available with oxygen, the underlying polysilicon sidewall surface will selectively oxidize instead of the overlying tungsten. The inert gas-filled containers are retrofitted to potential leak areas of not only the tube, but also a torch that is used to forward heated gas into the tube.
摘要翻译：提供了一种改进的炉系统和方法，以在临界处理步骤中大致最小化（如果不消除）环境空气进入炉系统的加热室。炉系统可用于例如氧化步骤，其中通过在温度升高期间的关键时刻基本上用惰性气体（例如氮气）清除潜在的泄漏区域，防止含有氧的环境空气进入大气压力管并降温，并在温度稳定和引入氧化气体之前。如果管内不存在氧气，则栅极导体的钨侧壁表面例如在临界氧化前和氧化后的时刻不会无意中氧化。然而，如果存在氢气可用于氧气的蒸汽，则下游的多晶硅侧壁表面将选择性地氧化而不是上覆的钨。惰性气体填充的容器不仅被改装到潜在的泄漏区域，而且还被用于将加热气体送入管中的火炬。

5. 发明授权

US07371637B2 Oxide-nitride stack gate dielectric 有权
标题翻译：氧化氮化物堆叠栅极电介质
公开(公告)号：US07371637B2
公开(公告)日：2008-05-13
申请号：US10950332
申请日：2004-09-24
申请人： Krishnaswamy Ramkumar , Sundar Narayanan
发明人： Krishnaswamy Ramkumar , Sundar Narayanan
IPC分类号： H01L21/20
CPC分类号： H01L21/022 , H01L21/0217 , H01L21/02233 , H01L21/02337 , H01L21/28044 , H01L21/3144 , H01L29/4941 , H01L29/78
摘要： A method of making a semiconductor structure comprises forming an oxide layer on a substrate; forming a silicon nitride layer on the oxide layer; annealing the layers in NO; and annealing the layers in ammonia. The equivalent oxide thickness of the oxide layer and the silicon nitride layer together is at most 25 Angstroms.
摘要翻译：制造半导体结构的方法包括在衬底上形成氧化物层; 在氧化物层上形成氮化硅层; 在NO中退火层; 并在氨中退火层。氧化物层和氮化硅层的等效氧化物厚度在一起为至多25埃。

6. 发明授权

US07351663B1 Removing whisker defects 有权
标题翻译：去除晶须缺陷
公开(公告)号：US07351663B1
公开(公告)日：2008-04-01
申请号：US11169176
申请日：2005-06-27
申请人： Alex Kabansky , Hean-Cheal Lee , Sundar Narayanan , Prabhuram Gopalan , Vinay Krishna
发明人： Alex Kabansky , Hean-Cheal Lee , Sundar Narayanan , Prabhuram Gopalan , Vinay Krishna
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/28247 , H01L21/02071 , H01L21/28061 , H01L21/32138
摘要： A method of removing a defect from a gate stack on a substrate, comprises treating the gate stack with a plasma. The plasma comprises fluorine, the gate stack comprises a gate layer and a metallic layer, and substantially no photoresist is present on the substrate.
摘要翻译：从衬底上的栅极堆叠中去除缺陷的方法包括用等离子体处理栅极堆叠。等离子体包括氟，栅极堆叠包括栅极层和金属层，并且基板上基本上不存在光致抗蚀剂。

7. 发明授权

US06803330B2 Method for growing ultra thin nitrided oxide 有权
标题翻译：生长超薄氮化物的方法
公开(公告)号：US06803330B2
公开(公告)日：2004-10-12
申请号：US09975256
申请日：2001-10-12
申请人： Krishnaswamy Ramkumar , Sundar Narayanan
发明人： Krishnaswamy Ramkumar , Sundar Narayanan
IPC分类号： H01L2131
CPC分类号： H01L21/28185 , H01L21/28202 , H01L29/518
摘要： A method of nitriding a gate oxide layer by annealing a preformed oxide layer with nitric oxide (NO) gas is disclosed. The nitridation process can be carried out at lower temperatures and pressures than a conventional nitrous oxide anneal while still achieving acceptable levels of nitridation. The nitridation process can be conducted at atmospheric or sub-atmospheric pressures. As a result, the nitridation process can be used to form nitrided gate oxide layers in-situ in a CVD furnace. The nitrided gate oxide layer can optionally be reoxidized in a second oxidation step after the nitridation step. A gate electrode layer (e.g., boron doped polysilicon) can then be deposited on top of the nitrided gate oxide layer or on top of the reoxidized and nitrided gate oxide layer.
摘要翻译：公开了通过用一氧化氮（NO）气体退火预形成的氧化物层来对栅极氧化物层进行氮化的方法。氮化过程可以在比常规氧化亚氮退火更低的温度和压力下进行，同时仍然达到可接受的氮化水平。氮化过程可以在大气压或低于大气压的压力下进行。结果，可以使用氮化工艺在CVD炉中原位形成氮化的栅极氧化物层。氮化栅氧化层可以在氮化步骤后的第二氧化步骤中任选地再氧化。然后可以在氮化栅极氧化物层的顶部上或在再氧化和氮化的栅极氧化物层的顶部上沉积栅极电极层（例如，硼掺杂的多晶硅）。

8. 发明授权

US06664120B1 Method and structure for determining a concentration profile of an impurity within a semiconductor layer 失效
标题翻译：用于确定半导体层内的杂质的浓度分布的方法和结构
公开(公告)号：US06664120B1
公开(公告)日：2003-12-16
申请号：US10023065
申请日：2001-12-17
申请人： Sundar Narayanan , Krishnaswamy Ramkumar
发明人： Sundar Narayanan , Krishnaswamy Ramkumar
IPC分类号： H01L2166
CPC分类号： H01L22/20 , G01N1/32 , G01N19/06 , H01L22/34
摘要： A method and a structure are provided for measuring a concentration of an impurity within a layer arranged upon a semiconductor substrate. The method may include exposing the layer and semiconductor substrate to oxidizing conditions and determining a difference in total dielectric thickness above the substrate from before to after exposing the layer and substrate. The difference may be correlated to a concentration of the impurity. In some cases, the method may include designating a plurality of measurement locations on the layer such that a concentration profile of the impurity within the layer may be determined. In some embodiments, exposing the layer and substrate may include forming an oxidized interface between the layer and the semiconductor substrate. Preferably, the oxidized interface is thicker underneath portions of the layer with a lower concentration of the impurity than underneath portions of the layer with a higher concentration of the impurity.
摘要翻译：提供了一种测量布置在半导体衬底上的层内的杂质浓度的方法和结构。该方法可以包括将层和半导体衬底暴露于氧化条件，并确定在暴露层和衬底之前至之后的衬底上的总电介质厚度的差异。该差异可能与杂质的浓度相关。在一些情况下，该方法可以包括指定层上的多个测量位置，使得可以确定该层内的杂质的浓度分布。在一些实施例中，暴露层和衬底可以包括在层和半导体衬底之间形成氧化界面。优选地，具有较低浓度的杂质的层的下部的氧化界面比具有较高浓度杂质的层的下部更厚。

9. 发明申请

US20080093680A1 OXIDE-NITRIDE STACK GATE DIELECTRIC 有权
标题翻译：氧化物 - 氮化物堆积电介质
公开(公告)号：US20080093680A1
公开(公告)日：2008-04-24
申请号：US11961750
申请日：2007-12-20
申请人： Krishnaswamy Ramkumar , Sundar Narayanan
发明人： Krishnaswamy Ramkumar , Sundar Narayanan
IPC分类号： H01L29/78 , H01L21/31
CPC分类号： H01L21/022 , H01L21/0217 , H01L21/02233 , H01L21/02337 , H01L21/28044 , H01L21/3144 , H01L29/4941 , H01L29/78
摘要： A method of making a semiconductor structure comprises forming an oxide layer on a substrate; forming a silicon nitride layer on the oxide layer; annealing the layers in NO; and annealing the layers in ammonia. The equivalent oxide thickness of the oxide layer and the silicon nitride layer together is at most 25 Angstroms.
摘要翻译：制造半导体结构的方法包括在衬底上形成氧化物层; 在氧化物层上形成氮化硅层; 在NO中退火层; 并在氨中退火层。氧化物层和氮化硅层的等效氧化物厚度在一起为至多25埃。

10. 发明授权

US07189652B1 Selective oxidation of gate stack 有权
标题翻译：选择性氧化栅极叠层
公开(公告)号：US07189652B1
公开(公告)日：2007-03-13
申请号：US10313048
申请日：2002-12-06
申请人： Alain Blosse , Sundar Narayanan , Krishnaswamy Ramkumar
发明人： Alain Blosse , Sundar Narayanan , Krishnaswamy Ramkumar
IPC分类号： H01L21/302
CPC分类号： H01L21/28247 , H01L21/28061
摘要： A method of forming a semiconductor structure comprises oxidizing a stack, to form sidewall oxide in contact with sides of the stack. The stack is on a semiconductor substrate, the stack includes a gate layer, comprising silicon; a metallic layer, on the gate layer; and an etch-stop layer, on the metallic layer. The sidewall oxide in contact with the metallic layer is thinner than the sidewall oxide in contact with the gate layer.
摘要翻译：形成半导体结构的方法包括氧化堆叠，以形成与堆叠的侧面接触的侧壁氧化物。堆叠在半导体衬底上，堆叠包括包含硅的栅极层; 栅极层上的金属层; 和金属层上的蚀刻停止层。与金属层接触的侧壁氧化物比与栅极层接触的侧壁氧化物薄。

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