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1. 发明申请

US20100283070A1 Nitride semiconductor light emitting device and method of manufacturing the same 审中-公开
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20100283070A1
公开(公告)日：2010-11-11
申请号：US12007497
申请日：2008-01-11
申请人： Sun Woon Kim , Dong Joon Kim , Dong Ju Lee
发明人： Sun Woon Kim , Dong Joon Kim , Dong Ju Lee
IPC分类号： H01L33/10 , H01L33/26
CPC分类号： H01L33/382 , H01L33/08
摘要： There are provided a nitride semiconductor light emitting device having improved light extraction efficiency and a method of manufacturing the same. A nitride semiconductor light emitting device according to an aspect of the invention includes a light emitting lamination including first and second conductivity type nitride semiconductors and an active layer formed therebetween, first and second electrode pads electrically connected to the first and second conductivity nitride semiconductor layers, respectively, a plurality of patterns formed below the second electrode pad and having a depth reaching at least part of the first conductivity type nitride semiconductor layer, and an insulating film formed at an internal surface of the plurality of patterns to electrically insulate a region of a light emitting lamination, which is exposed through the plurality of patterns, from the second electrode pad.
摘要翻译：提供了具有改进的光提取效率的氮化物半导体发光器件及其制造方法。根据本发明的一个方面的氮化物半导体发光器件包括包括第一和第二导电型氮化物半导体的发光层压体和在其间形成的有源层，与第一和第二导电氮化物半导体层电连接的第一和第二电极焊盘，分别形成在第二电极焊盘下方并且具有到达第一导电型氮化物半导体层的至少一部分的深度的多个图案，以及形成在多个图案的内表面处的绝缘膜，以使通过多个图案曝光的发光层压从第二电极焊盘。

2. 发明授权

US07135716B2 Gallium nitride-based semiconductor light-emitting device 有权
标题翻译：氮化镓系半导体发光元件
公开(公告)号：US07135716B2
公开(公告)日：2006-11-14
申请号：US10911562
申请日：2004-08-05
申请人： Je Won Kim , Jeong Tak Oh , Dong Joon Kim , Sun Woon Kim , Soo Min Lee
发明人： Je Won Kim , Jeong Tak Oh , Dong Joon Kim , Sun Woon Kim , Soo Min Lee
IPC分类号： H01L29/22
CPC分类号： H01L33/12 , H01L33/02 , H01L33/32
摘要： A gallium nitride-based semiconductor light-emitting device includes a sapphire substrate having a nitridated upper surface; a polarity conversion layer formed on the sapphire substrate and made of MgN-based single ciystals; a first conductive gallium nitride-based semiconductor layer formed on the polarity conversion layer; an active layer formed on the first conductive gallium nitride-based semiconductor layer; and a second conductive gallium nitride-based semiconductor layer formed on the active layer.
摘要翻译：氮化镓系半导体发光元件包括具有氮化上表面的蓝宝石衬底; 在蓝宝石衬底上形成的由MgN基单晶构成的极性转换层; 形成在极性转换层上的第一导电氮化镓基半导体层; 形成在第一导电氮化镓基半导体层上的有源层; 以及形成在有源层上的第二导电氮化镓基半导体层。

3. 发明授权

US07018912B2 Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby 失效
标题翻译：由此制造氮化物半导体的制造方法和氮化物半导体结构
公开(公告)号：US07018912B2
公开(公告)日：2006-03-28
申请号：US10806432
申请日：2004-03-23
申请人： Sun Woon Kim , In Eung Kim , Hun Joo Hahm , Soo Min Lee , Dong Joon Kim , Je Won Kim
发明人： Sun Woon Kim , In Eung Kim , Hun Joo Hahm , Soo Min Lee , Dong Joon Kim , Je Won Kim
IPC分类号： H01L21/00
CPC分类号： C30B29/406 , C30B25/02 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262 , Y10S438/967
摘要： Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.
摘要翻译：公开了一种在MOCVD反应器中制造氮化物半导体的方法。首先将GaN沉积在MOCVD反应器的内壁上，并将蓝宝石衬底装载到MOCVD反应器中。将蓝宝石衬底加热并将蚀刻气体注入到MOCVD反应器中。将NH 3气体注入到MOCVD反应器中以使蓝宝石衬底的表面硝化。在氮化蓝宝石衬底上生长氮化物半导体层。通过表面改性蓝宝石衬底，然后通过MOCVD在表面改性的蓝宝石衬底上生长氮化物半导体层，而不形成低温缓冲层，可以实现优异的氮化物半导体结构。在这种情况下，可以在表面处理的蓝宝石衬底上有效地生长例如GaN的氮化物半导体层，因为在蚀刻时在蓝宝石衬底上发生GaN沉积。

4. 发明授权

US07067401B2 Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby 失效
公开(公告)号：US07067401B2
公开(公告)日：2006-06-27
申请号：US11235278
申请日：2005-09-27
申请人： Sun Woon Kim , In Eung Kim , Hun Joo Hahm , Soo Min Lee , Dong Joon Kim , Je Won Kim
发明人： Sun Woon Kim , In Eung Kim , Hun Joo Hahm , Soo Min Lee , Dong Joon Kim , Je Won Kim
IPC分类号： H01L21/20
CPC分类号： C30B29/406 , C30B25/02 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262 , Y10S438/967
摘要： Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.

5. 发明授权

US08415708B2 Nitride based semiconductor light-emitting device 有权
标题翻译：氮化物基半导体发光器件
公开(公告)号：US08415708B2
公开(公告)日：2013-04-09
申请号：US12911320
申请日：2010-10-25
申请人： Je Won Kim , Jeong Tak Oh , Dong Joon Kim , Sun Woon Kim , Jin Sub Park , Kyu Han Lee
发明人： Je Won Kim , Jeong Tak Oh , Dong Joon Kim , Sun Woon Kim , Jin Sub Park , Kyu Han Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , B82Y20/00 , H01L33/06 , H01L33/32
摘要： Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0
摘要翻译：本文公开了一种氮化物基半导体发光器件。氮化物系半导体发光元件包括由n型Al x In 1 Ga 1（1-x1-y1）N（其中0＆nlE; x1＆nlE; 1,0＆amp; nlE; y1＆nlE; 1和0＆nlE; x1 + y1＆nlE ; 1），由n型覆盖层上形成的未掺杂的InAGa1-AN（其中0

6. 发明申请

US20070148923A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20070148923A1
公开(公告)日：2007-06-28
申请号：US11681998
申请日：2007-03-05
申请人： Je Won Kim , Sun Woon Kim , Dong Joon Kim
发明人： Je Won Kim , Sun Woon Kim , Dong Joon Kim
IPC分类号： H01L21/20 , H01L21/36 , H01L31/20
CPC分类号： H01L33/14 , H01L33/20 , H01L33/32 , Y10S438/962 , Y10S438/964
摘要： The present invention provides a nitride semiconductor device. The nitride semiconductor device comprises an n-type nitride semiconductor layer formed on a nitride crystal growth substrate. An active layer is formed on the n-type nitride semiconductor layer. A first p-type nitride semiconductor layer is formed on the active layer. A micro-structured current diffusion pattern is formed on the first p-type nitride semiconductor layer. The current diffusion pattern is made of an insulation material. A second p-type nitride semiconductor layer is formed on the first p-type nitride semiconductor layer having the current diffusion pattern formed thereon.
摘要翻译：本发明提供一种氮化物半导体器件。氮化物半导体器件包括形成在氮化物晶体生长衬底上的n型氮化物半导体层。在n型氮化物半导体层上形成有源层。在有源层上形成第一p型氮化物半导体层。在第一p型氮化物半导体层上形成微结构化的电流扩散图案。电流扩散图案由绝缘材料制成。在其上形成有电流扩散图案的第一p型氮化物半导体层上形成第二p型氮化物半导体层。

7. 发明授权

US07187007B2 Nitride semiconductor device and method of manufacturing the same 有权
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US07187007B2
公开(公告)日：2007-03-06
申请号：US11052103
申请日：2005-02-08
申请人： Je Won Kim , Sun Woon Kim , Dong Joon Kim
发明人： Je Won Kim , Sun Woon Kim , Dong Joon Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/20 , H01L33/32 , Y10S438/962 , Y10S438/964
摘要： The present invention provides a nitride semiconductor device. The nitride semiconductor device comprises an n-type nitride semiconductor layer formed on a nitride crystal growth substrate. An active layer is formed on the n-type nitride semiconductor layer. A first p-type nitride semiconductor layer is formed on the active layer. A micro-structured current diffusion pattern is formed on the first p-type nitride semiconductor layer. The current diffusion pattern is made of an insulation material. A second p-type nitride semiconductor layer is formed on the first p-type nitride semiconductor layer having the current diffusion pattern formed thereon.
摘要翻译：本发明提供一种氮化物半导体器件。氮化物半导体器件包括形成在氮化物晶体生长衬底上的n型氮化物半导体层。在n型氮化物半导体层上形成有源层。在有源层上形成第一p型氮化物半导体层。在第一p型氮化物半导体层上形成微结构化的电流扩散图案。电流扩散图案由绝缘材料制成。在其上形成有电流扩散图案的第一p型氮化物半导体层上形成第二p型氮化物半导体层。

8. 发明申请

US20080293177A1 Method of manufacturing nitride-based semiconductor light emitting diode 失效
标题翻译：制造氮化物基半导体发光二极管的方法
公开(公告)号：US20080293177A1
公开(公告)日：2008-11-27
申请号：US11889392
申请日：2007-08-13
申请人： Sun Woon Kim , Seong Ju Park , Ja Yeon Kim , Min Ki Kwon , Dong Ju Lee , Jae Ho Han
发明人： Sun Woon Kim , Seong Ju Park , Ja Yeon Kim , Min Ki Kwon , Dong Ju Lee , Jae Ho Han
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/42
摘要： Provided is a method of manufacturing a nitride-based semiconductor LED including sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a Pd/Zn alloy layer on the p-type nitride semiconductor layer; heat-treating the p-type nitride semiconductor layer on which the Pd/Zn alloy layer is formed; removing the Pd/Zn alloy layer formed on the p-type nitride semiconductor layer; mesa-etching portions of the p-type nitride semiconductor layer, the active layer, and the n-type nitride semiconductor layer such that a portion of the upper surface of the n-type nitride semiconductor layer is exposed; and forming an n-electrode and a p-electrode on the exposed n-type nitride semiconductor layer and the p-type nitride semiconductor layer, respectively.
摘要翻译：本发明提供一种在基板上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层的氮化物系半导体LED的制造方法。在p型氮化物半导体层上形成Pd / Zn合金层; 热处理形成有Pd / Zn合金层的p型氮化物半导体层; 去除形成在p型氮化物半导体层上的Pd / Zn合金层; p型氮化物半导体层，有源层和n型氮化物半导体层的台面蚀刻部分，使得n型氮化物半导体层的上表面的一部分露出; 以及在暴露的n型氮化物半导体层和p型氮化物半导体层上分别形成n电极和p电极。

9. 发明授权

US07893443B2 Nitride based semiconductor light-emitting device 有权
标题翻译：氮化物基半导体发光器件
公开(公告)号：US07893443B2
公开(公告)日：2011-02-22
申请号：US11380415
申请日：2006-04-26
申请人： Je Won Kim , Jeong Tak Oh , Dong Joon Kim , Sun Woon Kim , Jin Sub Park , Kyu Han Lee
发明人： Je Won Kim , Jeong Tak Oh , Dong Joon Kim , Sun Woon Kim , Jin Sub Park , Kyu Han Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/04 , B82Y20/00 , H01L33/06 , H01L33/32
摘要： Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0
摘要翻译：本文公开了一种氮化物基半导体发光器件。氮化物系半导体发光元件包括由n型Al x In 1 Ga 1（1-x1-y1）N（其中0＆nlE; x1＆nlE; 1,0＆amp; nlE; y1＆nlE; 1和0＆nlE; x1 + y1＆nlE ; 1），由n型覆盖层上形成的未掺杂的InAGa1-AN（其中0

10. 发明申请

US20110037086A1 NITRIDE BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
标题翻译：基于氮化物的半导体发光器件
公开(公告)号：US20110037086A1
公开(公告)日：2011-02-17
申请号：US12911320
申请日：2010-10-25
申请人： Je Won KIM , Jeong Tak Oh , Dong Joon Kim , Sun Woon Kim , Jin Sub Park , Kyu Han Lee
发明人： Je Won KIM , Jeong Tak Oh , Dong Joon Kim , Sun Woon Kim , Jin Sub Park , Kyu Han Lee
IPC分类号： H01L33/30
CPC分类号： H01L33/04 , B82Y20/00 , H01L33/06 , H01L33/32
摘要： Disclosed herein is a nitride-based semiconductor light-emitting device. The nitride-based semiconductor light-emitting device comprises an n-type clad layer made of n-type Alx1Iny1Ga(1-x1-y1)N (where 0≦x1≦1, 0≦y1≦1, and 0≦x1+y1≦1), a multiple quantum well-structured active layer made of undoped InAGa1-AN (where 0
摘要翻译：本文公开了一种氮化物基半导体发光器件。氮化物系半导体发光元件包括由n型Al x In 1 Ga 1（1-x1-y1）N（其中0＆nlE; x1＆nlE; 1,0＆amp; nlE; y1＆nlE; 1和0＆nlE; x1 + y1＆nlE ; 1），由n型覆盖层上形成的未掺杂的InAGa1-AN（其中0

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