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1. 发明申请

US20080293177A1 Method of manufacturing nitride-based semiconductor light emitting diode 失效
标题翻译：制造氮化物基半导体发光二极管的方法
公开(公告)号：US20080293177A1
公开(公告)日：2008-11-27
申请号：US11889392
申请日：2007-08-13
申请人： Sun Woon Kim , Seong Ju Park , Ja Yeon Kim , Min Ki Kwon , Dong Ju Lee , Jae Ho Han
发明人： Sun Woon Kim , Seong Ju Park , Ja Yeon Kim , Min Ki Kwon , Dong Ju Lee , Jae Ho Han
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/42
摘要： Provided is a method of manufacturing a nitride-based semiconductor LED including sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a Pd/Zn alloy layer on the p-type nitride semiconductor layer; heat-treating the p-type nitride semiconductor layer on which the Pd/Zn alloy layer is formed; removing the Pd/Zn alloy layer formed on the p-type nitride semiconductor layer; mesa-etching portions of the p-type nitride semiconductor layer, the active layer, and the n-type nitride semiconductor layer such that a portion of the upper surface of the n-type nitride semiconductor layer is exposed; and forming an n-electrode and a p-electrode on the exposed n-type nitride semiconductor layer and the p-type nitride semiconductor layer, respectively.
摘要翻译：本发明提供一种在基板上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层的氮化物系半导体LED的制造方法。在p型氮化物半导体层上形成Pd / Zn合金层; 热处理形成有Pd / Zn合金层的p型氮化物半导体层; 去除形成在p型氮化物半导体层上的Pd / Zn合金层; p型氮化物半导体层，有源层和n型氮化物半导体层的台面蚀刻部分，使得n型氮化物半导体层的上表面的一部分露出; 以及在暴露的n型氮化物半导体层和p型氮化物半导体层上分别形成n电极和p电极。

2. 发明授权

US07575944B2 Method of manufacturing nitride-based semiconductor light emitting diode 失效
标题翻译：制造氮化物基半导体发光二极管的方法
公开(公告)号：US07575944B2
公开(公告)日：2009-08-18
申请号：US11889392
申请日：2007-08-13
申请人： Sun Woon Kim , Seong Ju Park , Ja Yeon Kim , Min Ki Kwon , Dong Ju Lee , Jae Ho Han
发明人： Sun Woon Kim , Seong Ju Park , Ja Yeon Kim , Min Ki Kwon , Dong Ju Lee , Jae Ho Han
IPC分类号： H01L21/4763
CPC分类号： H01L33/40 , H01L33/32 , H01L33/42
摘要： Provided is a method of manufacturing a nitride-based semiconductor LED including sequentially forming an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a Pd/Zn alloy layer on the p-type nitride semiconductor layer; heat-treating the p-type nitride semiconductor layer on which the Pd/Zn alloy layer is formed; removing the Pd/Zn alloy layer formed on the p-type nitride semiconductor layer; mesa-etching portions of the p-type nitride semiconductor layer, the active layer, and the n-type nitride semiconductor layer such that a portion of the upper surface of the n-type nitride semiconductor layer is exposed; and forming an n-electrode and a p-electrode on the exposed n-type nitride semiconductor layer and the p-type nitride semiconductor layer, respectively.
摘要翻译：本发明提供一种在基板上依次形成n型氮化物半导体层，有源层和p型氮化物半导体层的氮化物系半导体LED的制造方法。在p型氮化物半导体层上形成Pd / Zn合金层; 热处理形成有Pd / Zn合金层的p型氮化物半导体层; 去除形成在p型氮化物半导体层上的Pd / Zn合金层; p型氮化物半导体层，有源层和n型氮化物半导体层的台面蚀刻部分，使得n型氮化物半导体层的上表面的一部分露出; 以及在暴露的n型氮化物半导体层和p型氮化物半导体层上分别形成n电极和p电极。

3. 发明申请

US20100283070A1 Nitride semiconductor light emitting device and method of manufacturing the same 审中-公开
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20100283070A1
公开(公告)日：2010-11-11
申请号：US12007497
申请日：2008-01-11
申请人： Sun Woon Kim , Dong Joon Kim , Dong Ju Lee
发明人： Sun Woon Kim , Dong Joon Kim , Dong Ju Lee
IPC分类号： H01L33/10 , H01L33/26
CPC分类号： H01L33/382 , H01L33/08
摘要： There are provided a nitride semiconductor light emitting device having improved light extraction efficiency and a method of manufacturing the same. A nitride semiconductor light emitting device according to an aspect of the invention includes a light emitting lamination including first and second conductivity type nitride semiconductors and an active layer formed therebetween, first and second electrode pads electrically connected to the first and second conductivity nitride semiconductor layers, respectively, a plurality of patterns formed below the second electrode pad and having a depth reaching at least part of the first conductivity type nitride semiconductor layer, and an insulating film formed at an internal surface of the plurality of patterns to electrically insulate a region of a light emitting lamination, which is exposed through the plurality of patterns, from the second electrode pad.
摘要翻译：提供了具有改进的光提取效率的氮化物半导体发光器件及其制造方法。根据本发明的一个方面的氮化物半导体发光器件包括包括第一和第二导电型氮化物半导体的发光层压体和在其间形成的有源层，与第一和第二导电氮化物半导体层电连接的第一和第二电极焊盘，分别形成在第二电极焊盘下方并且具有到达第一导电型氮化物半导体层的至少一部分的深度的多个图案，以及形成在多个图案的内表面处的绝缘膜，以使通过多个图案曝光的发光层压从第二电极焊盘。

4. 发明授权

US08372669B2 Semiconductor light emitting device having patterned substrate and manufacturing method of the same 有权
标题翻译：具有图案化衬底的半导体发光器件及其制造方法
公开(公告)号：US08372669B2
公开(公告)日：2013-02-12
申请号：US13176712
申请日：2011-07-05
申请人： Sun Woon Kim , Hyun Kyung Kim , Hyung Ky Back , Jae Ho Han
发明人： Sun Woon Kim , Hyun Kyung Kim , Hyung Ky Back , Jae Ho Han
IPC分类号： H01L21/00
CPC分类号： H01L33/22 , H01L33/12 , H01L2933/0083
摘要： There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.
摘要翻译：提供了具有图案化衬底的半导体发光器件及其制造方法。半导体发光器件包括衬底; 在基板上依次形成第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层，其中，在其表面上设置有具有多个凸部的图案，其中，图案的凸部，第一凸部与相邻的凸部之间的距离与第二凸部与相邻的凸部之间的距离不同。

5. 发明授权

US07999272B2 Semiconductor light emitting device having patterned substrate 有权
标题翻译：具有图案化衬底的半导体发光器件
公开(公告)号：US07999272B2
公开(公告)日：2011-08-16
申请号：US12273512
申请日：2008-11-18
申请人： Sun Woon Kim , Hyun Kyung Kim , Hyung Ky Back , Jae Ho Han
发明人： Sun Woon Kim , Hyun Kyung Kim , Hyung Ky Back , Jae Ho Han
IPC分类号： H01L29/22 , H01L33/00 , H01L29/24 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01L33/22 , H01L33/12 , H01L2933/0083
摘要： There is provided a semiconductor light emitting device having a patterned substrate and a manufacturing method of the same. The semiconductor light emitting device includes a substrate; a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer sequentially formed on the substrate, wherein the substrate is provided on a surface thereof with a pattern having a plurality of convex portions, wherein out of the plurality of convex portions of the pattern, a distance between a first convex portion and an adjacent one of the convex portions is different from a distance between a second convex portion and an adjacent one of the convex portions.
摘要翻译：提供了具有图案化衬底的半导体发光器件及其制造方法。半导体发光器件包括：衬底; 在基板上依次形成第一导电型氮化物半导体层，有源层和第二导电型氮化物半导体层，其中，在其表面上设置有具有多个凸部的图案，其中，图案的凸部，第一凸部与相邻的凸部之间的距离与第二凸部与相邻的凸部之间的距离不同。

6. 发明授权

US07135716B2 Gallium nitride-based semiconductor light-emitting device 有权
标题翻译：氮化镓系半导体发光元件
公开(公告)号：US07135716B2
公开(公告)日：2006-11-14
申请号：US10911562
申请日：2004-08-05
申请人： Je Won Kim , Jeong Tak Oh , Dong Joon Kim , Sun Woon Kim , Soo Min Lee
发明人： Je Won Kim , Jeong Tak Oh , Dong Joon Kim , Sun Woon Kim , Soo Min Lee
IPC分类号： H01L29/22
CPC分类号： H01L33/12 , H01L33/02 , H01L33/32
摘要： A gallium nitride-based semiconductor light-emitting device includes a sapphire substrate having a nitridated upper surface; a polarity conversion layer formed on the sapphire substrate and made of MgN-based single ciystals; a first conductive gallium nitride-based semiconductor layer formed on the polarity conversion layer; an active layer formed on the first conductive gallium nitride-based semiconductor layer; and a second conductive gallium nitride-based semiconductor layer formed on the active layer.
摘要翻译：氮化镓系半导体发光元件包括具有氮化上表面的蓝宝石衬底; 在蓝宝石衬底上形成的由MgN基单晶构成的极性转换层; 形成在极性转换层上的第一导电氮化镓基半导体层; 形成在第一导电氮化镓基半导体层上的有源层; 以及形成在有源层上的第二导电氮化镓基半导体层。

7. 发明授权

US07018912B2 Fabrication method of nitride semiconductors and nitride semiconductor structure fabricated thereby 失效
标题翻译：由此制造氮化物半导体的制造方法和氮化物半导体结构
公开(公告)号：US07018912B2
公开(公告)日：2006-03-28
申请号：US10806432
申请日：2004-03-23
申请人： Sun Woon Kim , In Eung Kim , Hun Joo Hahm , Soo Min Lee , Dong Joon Kim , Je Won Kim
发明人： Sun Woon Kim , In Eung Kim , Hun Joo Hahm , Soo Min Lee , Dong Joon Kim , Je Won Kim
IPC分类号： H01L21/00
CPC分类号： C30B29/406 , C30B25/02 , H01L21/0237 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/0262 , Y10S438/967
摘要： Disclosed is a method of fabricating nitride semiconductors in a MOCVD reactor. GaN is first deposited on an inner wall of the MOCVD reactor, and a sapphire substrate is loaded into the MOCVD reactor. The sapphire substrate is heated and etching gas is injected into the MOCVD reactor. NH3 gas is injected into the MOCVD reactor to nitrify the surface of the sapphire substrate. A nitride semiconductor layer is grown on the nitrified sapphire substrate. By surface-reforming the sapphire substrate and then growing the nitride semiconductor layer on the surface-reformed sapphire substrate via MOCVD without formation of a low temperature buffer layer, an excellent nitride semiconductor structure can be realized. In this circumstance, the nitride semiconductor layer for example of GaN can be grown effectively on the surface-treated sapphire substrate because GaN deposition occurs on the sapphire substrate while it is etched.
摘要翻译：公开了一种在MOCVD反应器中制造氮化物半导体的方法。首先将GaN沉积在MOCVD反应器的内壁上，并将蓝宝石衬底装载到MOCVD反应器中。将蓝宝石衬底加热并将蚀刻气体注入到MOCVD反应器中。将NH 3气体注入到MOCVD反应器中以使蓝宝石衬底的表面硝化。在氮化蓝宝石衬底上生长氮化物半导体层。通过表面改性蓝宝石衬底，然后通过MOCVD在表面改性的蓝宝石衬底上生长氮化物半导体层，而不形成低温缓冲层，可以实现优异的氮化物半导体结构。在这种情况下，可以在表面处理的蓝宝石衬底上有效地生长例如GaN的氮化物半导体层，因为在蚀刻时在蓝宝石衬底上发生GaN沉积。

8. 发明授权

US07692201B2 Semiconductor light-emitting device with improved light extraction efficiency 有权
标题翻译：具有提高光提取效率的半导体发光器件
公开(公告)号：US07692201B2
公开(公告)日：2010-04-06
申请号：US11098802
申请日：2005-04-05
申请人： Sun Woon Kim , Hyun Kyung Kim , Je Won Kim , In Seok Choi , Kyu Han Lee , Jeong Tak Oh
发明人： Sun Woon Kim , Hyun Kyung Kim , Je Won Kim , In Seok Choi , Kyu Han Lee , Jeong Tak Oh
IPC分类号： H01L33/00
CPC分类号： H01L33/22
摘要： The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.
摘要翻译：本发明提供一种半导体发光装置。发光器件包括顺序地形成在衬底上的第一导电覆盖层，有源层和第二导电覆层。在发光装置中，基板在其上表面形成有一个或多个侧图案，同时连接到上表面的一个或多个边缘。侧面图案由突起或凹陷组成，以将光散射或衍射到发光器件的上部或下部。

9. 发明授权

US06936838B2 Nitride-based semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US06936838B2
公开(公告)日：2005-08-30
申请号：US10776270
申请日：2004-02-12
申请人： Sun Woon Kim
发明人： Sun Woon Kim
IPC分类号： H01S5/20 , H01L29/15 , H01L29/20 , H01L33/06 , H01L33/32 , H01L33/36 , H01L29/06 , H01L31/0328 , H01L31/0336
CPC分类号： H01L33/06 , B82Y20/00 , H01L29/155 , H01L29/2003 , H01L33/32
摘要： Disclosed is a nitride-based semiconductor device including a first nitride semiconductor layer doped with an n type impurity, an active layer formed on the first nitride semiconductor layer, the active layer including a plurality of quantum well layers and a plurality of quantum barrier layers alternately laminated over one another, at least one of the quantum layers being doped with the n type impurity, and a nitride semiconductor layer formed over the active layer, and doped with a p type impurity. The quantum barrier layer doped with the n type impurity includes an internal layer portion doped with the n type impurity, and an anti-diffusion film arranged at an interface of the quantum barrier layer with an adjacent one of the quantum well layers, the anti-diffusion film having an n type impurity concentration lower than that of the internal layer portion.
摘要翻译：公开了一种氮化物基半导体器件，其包括掺杂有n型杂质的第一氮化物半导体层，在第一氮化物半导体层上形成的有源层，包含多个量子阱层的活性层和多个量子势垒层层叠在一起，至少一个量子层掺杂有n型杂质，以及氮化物半导体层，形成在有源层上并掺杂有p型杂质。掺杂有n型杂质的量子势垒层包括掺杂有n型杂质的内层部分和设置在量子势垒层与相邻量子阱层的界面处的抗扩散膜，扩散膜的n型杂质浓度低于内层部分的浓度。

10. 发明授权

US08455906B2 Semiconductor light-emitting device with improved light extraction efficiency 有权
标题翻译：具有提高光提取效率的半导体发光器件
公开(公告)号：US08455906B2
公开(公告)日：2013-06-04
申请号：US13286881
申请日：2011-11-01
申请人： Sun Woon Kim , Hyun Kyung Kim , Je Won Kim , In Seok Choi , Kyu Han Lee , Jeong Tak Oh
发明人： Sun Woon Kim , Hyun Kyung Kim , Je Won Kim , In Seok Choi , Kyu Han Lee , Jeong Tak Oh
IPC分类号： H01L31/0232 , H01L31/0236
CPC分类号： H01L33/22
摘要： The present invention provides a semiconductor light-emitting device. The light-emitting device comprises a first conductive clad layer, an active layer, and a second conductive clad layer sequentially formed on a substrate. In the light-emitting device, the substrate has one or more side patterns formed on an upper surface thereof while being joined to one or more edges of the upper surface. The side patterns consist of protrusions or depressions so as to scatter or diffract light to an upper portion or a lower portion of the light-emitting device.
摘要翻译：本发明提供一种半导体发光装置。发光器件包括顺序地形成在衬底上的第一导电覆盖层，有源层和第二导电覆层。在发光装置中，基板在其上表面形成有一个或多个侧图案，同时连接到上表面的一个或多个边缘。侧面图案由突起或凹陷组成，以将光散射或衍射到发光器件的上部或下部。

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