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    • 8. 发明授权
    • Method for forming small features in microelectronic devices using sacrificial layers
    • 在使用牺牲层的微电子器件中形成小特征的方法
    • US07291556B2
    • 2007-11-06
    • US10873388
    • 2004-06-22
    • Suk-Hun ChoiYoon-Ho SonSung-Lae ChoJoon-Sang Park
    • Suk-Hun ChoiYoon-Ho SonSung-Lae ChoJoon-Sang Park
    • H01L21/00
    • H01L45/06H01L27/2436H01L45/1233H01L45/126H01L45/16
    • A dielectric layer is formed on a region of a microelectronic substrate. A sacrificial layer is formed on the dielectric layer, and portions of the sacrificial layer and the dielectric layer are removed to form an opening that exposes a portion of the region. A conductive layer is formed on the sacrificial layer and in the opening. Portions of the sacrificial layer and the conductive layer on the dielectric layer are removed to leave a conductive plug in the dielectric layer and in contact with the region. Removal of the sacrificial layer and portions of the conductive layer on the dielectric layer may include polishing to expose the sacrificial layer and to leave a conductive plug in the sacrificial layer and the dielectric layer, etching the sacrificial layer to expose the dielectric layer and leave a portion of the conductive plug protruding from the dielectric layer, and polishing to remove the protruding portion of the conductive plug. Phase-change memory devices formed by such techniques are also discussed.
    • 在微电子基板的区域上形成介电层。 在电介质层上形成牺牲层,去除牺牲层和电介质层的部分以形成露出该区域的一部分的开口。 在牺牲层和开口中形成导电层。 去除部分牺牲层和电介质层上的导电层,以在电介质层中留下导电插塞并与该区域接触。 消除牺牲层和电介质层上的导电层的部分可以包括抛光以暴露牺牲层并且在牺牲层和电介质层中留下导电插塞,蚀刻牺牲层以暴露电介质层并留下 导电插头从电介质层突出的部分,并且抛光以去除导电插塞的突出部分。 还讨论了通过这种技术形成的相变存储器件。
    • 10. 发明授权
    • Phase-change memory device using a variable resistance structure
    • 使用可变电阻结构的相变存储器件
    • US08148710B2
    • 2012-04-03
    • US12805824
    • 2010-08-20
    • Suk-Hun ChoiChang-Ki HongYoon-Ho SonJang-Eun Heo
    • Suk-Hun ChoiChang-Ki HongYoon-Ho SonJang-Eun Heo
    • H01L47/00H01L29/08H01L29/18
    • H01L27/2436H01L45/06H01L45/1233H01L45/1253H01L45/143H01L45/144H01L45/1675H01L45/1683
    • A phase-change memory device including a first contact region and a second contact region formed on a semiconductor substrate. A first insulating layer with a first contact hole and a second contact hole is disposed on the semiconductor substrate, exposing the first and second contact regions. A first conductive layer is disposed on the first insulating interlayer to fill the first and the second contact holes. A first protection layer pattern and a lower wiring protection pattern are disposed on the first conductive layer. A first contact with a first electrode and a second contact with a lower wiring are disposed so as to connect the first and second contact regions. A second protection layer with a second electrode is disposed on the first protection layer pattern and the lower wiring protection pattern. A via filled with a phase-change material is disposed between the first electrode and the second electrode.
    • 一种相变存储器件,包括形成在半导体衬底上的第一接触区域和第二接触区域。 具有第一接触孔和第二接触孔的第一绝缘层设置在半导体衬底上,暴露第一和第二接触区域。 第一导电层设置在第一绝缘中间层上以填充第一和第二接触孔。 第一保护层图案和下布线保护图案设置在第一导电层上。 设置与第一电极和与下布线的第二接触件的第一接触,以便连接第一和第二接触区域。 具有第二电极的第二保护层设置在第一保护层图案和下布线保护图案上。 填充有相变材料的通孔设置在第一电极和第二电极之间。