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    • 2. 发明授权
    • Thin film transistors
    • 薄膜晶体管
    • US08022410B2
    • 2011-09-20
    • US12497852
    • 2009-07-06
    • Sang-Hun JeonMoon-Sook LeeByeong-Ok Cho
    • Sang-Hun JeonMoon-Sook LeeByeong-Ok Cho
    • H01L29/786
    • H01L29/41733H01L27/1292H01L29/42384
    • A thin film transistor includes a layer structure having a gate electrode, a gate insulation layer and a channel layer. A source line may contact the channel layer, and may extend along a direction crossing over the gate electrode. The source line may partially overlap the gate electrode so that both sides of the source line overlapping the gate electrode may be entirely positioned between both sides of the gate electrode. A drain line may make contact with the channel layer and may be spaced apart from the source line by a channel length. The drain line may have a structure symmetrical to that of the source line. Overlap areas among the gate electrode, the source line and the drain line may be reduced, so that the thin film transistor may ensure a high cut-off frequency.
    • 薄膜晶体管包括具有栅电极,栅极绝缘层和沟道层的层结构。 源极线可以接触沟道层,并且可以沿着与栅电极交叉的方向延伸。 源极线可以部分地与栅电极重叠,使得与栅电极重叠的源极线的两侧可以完全位于栅电极的两侧之间。 漏极线可以与沟道层接触并且可以与源极线隔开通道长度。 漏极线可以具有与源极线对称的结构。 可以减小栅电极,源极线和漏极线之间的重叠区域,使得薄膜晶体管可以确保高的截止频率。