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    • 5. 发明授权
    • Display device and manufacturing method thereof
    • 显示装置及其制造方法
    • US09128563B2
    • 2015-09-08
    • US13366683
    • 2012-02-06
    • Suk Won JungSung Hoon YangSang-Youn HanSeung Mi SeoMi-Seon Seo
    • Suk Won JungSung Hoon YangSang-Youn HanSeung Mi SeoMi-Seon Seo
    • H01L29/04H01L29/10H01L31/00G06F3/042G06F3/041G02F1/1333
    • G06F3/042G02F1/13338G06F3/0412
    • A display device includes: a substrate; an infrared sensing transistor on the substrate; a readout transistor connected to the infrared sensing transistor; a power source line; and a light blocking member on the infrared sensing transistor, where the infrared sensing transistor includes a light blocking film on the substrate, a first gate electrode contacting and overlapping the light blocking film and connected to a power source line, a first semiconductor layer on the first gate electrode overlapping the light blocking film, and first source and drain electrodes on the first semiconductor layer, where the readout transistor includes a second gate electrode on the substrate, a second semiconductor layer on the second gate electrode and overlapping the second gate electrode, and second source and drain electrodes the second semiconductor layer, and where the power source line and the first gate electrode are at a same layer.
    • 显示装置包括:基板; 基板上的红外感测晶体管; 连接到红外感测晶体管的读出晶体管; 电源线; 以及所述红外感测晶体管上的遮光构件,其中所述红外感测晶体管在所述基板上包括遮光膜,与所述遮光膜接触并重叠并连接到电源线的第一栅电极, 与遮光膜重叠的第一栅电极以及第一半导体层上的第一源电极和漏电极,其中所述读出晶体管在所述衬底上包括第二栅电极,所述第二栅电极上的第二半导体层与所述第二栅电极重叠, 以及第二源极和漏极,第二半导体层,以及其中电源线和第一栅电极处于同一层。