会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 5. 发明授权
    • Display device and manufacturing method thereof
    • 显示装置及其制造方法
    • US08174015B2
    • 2012-05-08
    • US12761958
    • 2010-04-16
    • Ki-Hun JeongByeong-Hoon ChoJung-Suk BangSang-Youn HanWoong-Kwon KimSung-Hoon YangSuk Won JungDae-Cheol KimKyung-Sook JeonSeung Mi Seo
    • Ki-Hun JeongByeong-Hoon ChoJung-Suk BangSang-Youn HanWoong-Kwon KimSung-Hoon YangSuk Won JungDae-Cheol KimKyung-Sook JeonSeung Mi Seo
    • H01L29/04
    • G06F3/0421G06F3/0412H01L27/1251H01L27/323
    • A display device includes a lower panel including a lower substrate and a pixel transistor formed on the lower substrate; and an upper panel facing the lower panel, and including an upper substrate, a sensing transistor formed on the upper substrate, and a readout transistor connected to the sensing transistor and transmitting a signal. The readout transistor includes a first lower gate electrode formed on the upper substrate, a first semiconductor layer formed on the first lower gate electrode and overlaps the first gate electrode, and a first source electrode and a first drain electrode disposed on the first semiconductor layer. The sensing transistor includes a light blocking film disposed on the upper substrate, a second lower gate electrode contacting the light blocking film on the light blocking film, a second semiconductor layer overlapping the light blocking film on the second lower gate electrode, a second source electrode and a second drain electrode formed on the second semiconductor layer, and a second upper gate electrode overlapping the second semiconductor layer on the second source electrode and the second drain electrode.
    • 显示装置包括:下面板,包括下基板和形成在下基板上的像素晶体管; 以及面向下面板的上面板,并且包括上基板,形成在上基板上的检测晶体管,以及连接到感测晶体管并传输信号的读出晶体管。 读出晶体管包括形成在上基板上的第一下栅极电极,形成在第一下栅电极上并与第一栅电极重叠的第一半导体层,以及设置在第一半导体层上的第一源电极和第一漏电极。 感测晶体管包括设置在上基板上的遮光膜,与遮光膜接触的第二下栅电极,与第二下栅电极上的遮光膜重叠的第二半导体层,第二源电极 以及形成在第二半导体层上的第二漏电极和与第二源电极和第二漏电极上的第二半导体层重叠的第二上栅电极。
    • 10. 发明授权
    • Sensor array substrate and method of fabricating the same
    • 传感器阵列基板及其制造方法
    • US08445909B2
    • 2013-05-21
    • US13102824
    • 2011-05-06
    • Kyung-Sook JeonJun-Ho SongSang-Youn HanSung-Hoon YangDae-Cheol KimKi-Hun JeongMi-Seon Seo
    • Kyung-Sook JeonJun-Ho SongSang-Youn HanSung-Hoon YangDae-Cheol KimKi-Hun JeongMi-Seon Seo
    • H01L29/04
    • H01L27/1446H01L27/14683
    • Provided are a sensor array substrate and a method of fabricating the same. The sensor array substrate includes: a substrate in which a switching element region and a sensor region that senses light are defined; a first semiconductor layer which is formed in the sensor region; a first gate electrode which is formed on the first semiconductor layer and overlaps the first semiconductor layer; a second gate electrode which is formed in the switching element region; a second semiconductor layer which is formed on the second gate electrode and overlaps the second gate electrode; and a light-blocking pattern which is formed on the second semiconductor layer and overlaps the second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are disposed on different layers, and the second gate electrode and the light-blocking pattern are electrically connected to each other.
    • 提供传感器阵列基板及其制造方法。 传感器阵列基板包括:限定开关元件区域和感测光的传感器区域的基板; 形成在所述传感器区域中的第一半导体层; 第一栅电极,其形成在所述第一半导体层上并与所述第一半导体层重叠; 形成在所述开关元件区域中的第二栅电极; 第二半导体层,其形成在所述第二栅电极上并与所述第二栅电极重叠; 以及形成在所述第二半导体层上并与所述第二半导体层重叠的遮光图案,其中所述第一半导体层和所述第二半导体层设置在不同的层上,并且所述第二栅电极和所述遮光图案是电 相互连接。