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    • 9. 发明授权
    • Sensor array substrate and method of fabricating the same
    • 传感器阵列基板及其制造方法
    • US08445909B2
    • 2013-05-21
    • US13102824
    • 2011-05-06
    • Kyung-Sook JeonJun-Ho SongSang-Youn HanSung-Hoon YangDae-Cheol KimKi-Hun JeongMi-Seon Seo
    • Kyung-Sook JeonJun-Ho SongSang-Youn HanSung-Hoon YangDae-Cheol KimKi-Hun JeongMi-Seon Seo
    • H01L29/04
    • H01L27/1446H01L27/14683
    • Provided are a sensor array substrate and a method of fabricating the same. The sensor array substrate includes: a substrate in which a switching element region and a sensor region that senses light are defined; a first semiconductor layer which is formed in the sensor region; a first gate electrode which is formed on the first semiconductor layer and overlaps the first semiconductor layer; a second gate electrode which is formed in the switching element region; a second semiconductor layer which is formed on the second gate electrode and overlaps the second gate electrode; and a light-blocking pattern which is formed on the second semiconductor layer and overlaps the second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are disposed on different layers, and the second gate electrode and the light-blocking pattern are electrically connected to each other.
    • 提供传感器阵列基板及其制造方法。 传感器阵列基板包括:限定开关元件区域和感测光的传感器区域的基板; 形成在所述传感器区域中的第一半导体层; 第一栅电极,其形成在所述第一半导体层上并与所述第一半导体层重叠; 形成在所述开关元件区域中的第二栅电极; 第二半导体层,其形成在所述第二栅电极上并与所述第二栅电极重叠; 以及形成在所述第二半导体层上并与所述第二半导体层重叠的遮光图案,其中所述第一半导体层和所述第二半导体层设置在不同的层上,并且所述第二栅电极和所述遮光图案是电 相互连接。
    • 10. 发明授权
    • Display device and manufacturing method thereof
    • 显示装置及其制造方法
    • US09128563B2
    • 2015-09-08
    • US13366683
    • 2012-02-06
    • Suk Won JungSung Hoon YangSang-Youn HanSeung Mi SeoMi-Seon Seo
    • Suk Won JungSung Hoon YangSang-Youn HanSeung Mi SeoMi-Seon Seo
    • H01L29/04H01L29/10H01L31/00G06F3/042G06F3/041G02F1/1333
    • G06F3/042G02F1/13338G06F3/0412
    • A display device includes: a substrate; an infrared sensing transistor on the substrate; a readout transistor connected to the infrared sensing transistor; a power source line; and a light blocking member on the infrared sensing transistor, where the infrared sensing transistor includes a light blocking film on the substrate, a first gate electrode contacting and overlapping the light blocking film and connected to a power source line, a first semiconductor layer on the first gate electrode overlapping the light blocking film, and first source and drain electrodes on the first semiconductor layer, where the readout transistor includes a second gate electrode on the substrate, a second semiconductor layer on the second gate electrode and overlapping the second gate electrode, and second source and drain electrodes the second semiconductor layer, and where the power source line and the first gate electrode are at a same layer.
    • 显示装置包括:基板; 基板上的红外感测晶体管; 连接到红外感测晶体管的读出晶体管; 电源线; 以及所述红外感测晶体管上的遮光构件,其中所述红外感测晶体管在所述基板上包括遮光膜,与所述遮光膜接触并重叠并连接到电源线的第一栅电极, 与遮光膜重叠的第一栅电极以及第一半导体层上的第一源电极和漏电极,其中所述读出晶体管在所述衬底上包括第二栅电极,所述第二栅电极上的第二半导体层与所述第二栅电极重叠, 以及第二源极和漏极,第二半导体层,以及其中电源线和第一栅电极处于同一层。