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1. 发明授权

US07868316B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US07868316B2
公开(公告)日：2011-01-11
申请号：US12350188
申请日：2009-01-07
申请人： Suk Ho Yoon , Ki Ho Park , Joong Kon Son
发明人： Suk Ho Yoon , Ki Ho Park , Joong Kon Son
IPC分类号： H01L33/06
CPC分类号： H01L33/06
摘要： There is provided a nitride semiconductor device. A nitride semiconductor device according to an aspect of the invention may include: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; an active layer provided between the n-type and p-type nitride semiconductor layers and having quantum well layers and quantum barrier layers alternately stacked on each other; and an electron blocking layer provided between the active layer and the p-type nitride semiconductor layer, and having a plurality of first nitride layers formed of a material having a higher band gap energy than the quantum barrier layers and a plurality of second nitride layers formed of a material having a lower band gap energy than the first nitride layers, the first and second nitride layers alternately stacked on each other to form a stacked structure, wherein the plurality of first nitride layers have energy levels bent at predetermined inclinations, and with greater proximity to the p-type nitride semiconductor layer, the first nitride layers have a smaller inclination of the energy level.
摘要翻译：提供一种氮化物半导体器件。根据本发明的一个方面的氮化物半导体器件可以包括：n型氮化物半导体层; p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间并且具有彼此交替堆叠的量子阱层和量子势垒层的有源层; 以及设置在有源层和p型氮化物半导体层之间的电子阻挡层，并且具有由具有比量子势垒层更高的带隙能量的材料形成的多个第一氮化物层和形成的多个第二氮化物层具有比第一氮化物层低的带隙能量的材料，第一和第二氮化物层彼此交替堆叠以形成堆叠结构，其中多个第一氮化物层具有以预定倾斜度弯曲的能级，并且具有更大的靠近p型氮化物半导体层，第一氮化物层具有较小的能级倾斜度。

2. 发明申请

US20100117061A1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20100117061A1
公开(公告)日：2010-05-13
申请号：US12350188
申请日：2009-01-07
申请人： Suk Ho YOON , Ki Ho Park , Joong Kon Son
发明人： Suk Ho YOON , Ki Ho Park , Joong Kon Son
IPC分类号： H01L29/12
CPC分类号： H01L33/06
摘要： There is provided a nitride semiconductor device. A nitride semiconductor device according to an aspect of the invention may include: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; an active layer provided between the n-type and p-type nitride semiconductor layers and having quantum well layers and quantum barrier layers alternately stacked on each other; and an electron blocking layer provided between the active layer and the p-type nitride semiconductor layer, and having a plurality of first nitride layers formed of a material having a higher band gap energy than the quantum barrier layers and a plurality of second nitride layers formed of a material having a lower band gap energy than the first nitride layers, the first and second nitride layers alternately stacked on each other to form a stacked structure, wherein the plurality of first nitride layers have energy levels bent at predetermined inclinations, and with greater proximity to the p-type nitride semiconductor layer, the first nitride layers have a smaller inclination of the energy level.
摘要翻译：提供一种氮化物半导体器件。根据本发明的一个方面的氮化物半导体器件可以包括：n型氮化物半导体层; p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间并且具有彼此交替堆叠的量子阱层和量子势垒层的有源层; 以及设置在有源层和p型氮化物半导体层之间的电子阻挡层，并且具有由具有比量子势垒层更高的带隙能量的材料形成的多个第一氮化物层和形成的多个第二氮化物层具有比第一氮化物层低的带隙能量的材料，第一和第二氮化物层彼此交替堆叠以形成堆叠结构，其中多个第一氮化物层具有以预定倾斜度弯曲的能级，并且具有更大的靠近p型氮化物半导体层，第一氮化物层具有较小的能级倾斜度。

3. 发明授权

US08723206B2 Semiconductor light emitting device with contact hole passing through active layer 有权
标题翻译：具有穿过有源层的接触孔的半导体发光器件
公开(公告)号：US08723206B2
公开(公告)日：2014-05-13
申请号：US13228977
申请日：2011-09-09
申请人： Grigory Onushkin , Oleg Ledyaev , Jong Hoon Lim , Joong Kon Son , Pun Jae Choi
发明人： Grigory Onushkin , Oleg Ledyaev , Jong Hoon Lim , Joong Kon Son , Pun Jae Choi
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L27/15 , H01L2224/48463
摘要： A semiconductor light emitting device has a semiconductor laminate including first and second conductivity type semiconductor layers respectively providing first and second main surfaces and an active layer. The semiconductor laminate is divided into first and second regions. At least one contact hole is formed to pass through the active layer from the second main surface of the first region. A first electrode is formed on the second main surface to be connected to the first conductivity type semiconductor layer of the first region and the second conductivity type semiconductor layer of the second region. A second electrode is formed on the second main surface of the first region to be connected to the second conductivity type semiconductor layer of the first region and the first conductivity type semiconductor layer of the second region.
摘要翻译：半导体发光器件具有包括分别提供第一和第二主表面和有源层的第一和第二导电类型半导体层的半导体层叠体。半导体层叠体被分成第一和第二区域。形成至少一个接触孔以从第一区域的第二主表面穿过有源层。第一电极形成在第二主表面上，以连接到第一区域的第一导电类型半导体层和第二区域的第二导电类型半导体层。在与第一区域的第二导电类型半导体层和第二区域的第一导电类型半导体层连接的第一区域的第二主表面上形成第二电极。

4. 发明授权

US08068661B2 LED inspection apparatus and LED inspection method using the same 有权
标题翻译： LED检测仪器和LED检测方法使用相同
公开(公告)号：US08068661B2
公开(公告)日：2011-11-29
申请号：US12275581
申请日：2008-11-21
申请人： Grigory Onushkin , Joong Kon Son , Jong Hoon Lim , Sang Su Hong
发明人： Grigory Onushkin , Joong Kon Son , Jong Hoon Lim , Sang Su Hong
IPC分类号： G06K9/00
CPC分类号： G01N21/95 , G01N21/956
摘要： Disclosed are a light emitting diode (LED) inspection apparatus, which can determine whether an LED has a defect such as leakage current, without making physical contact with the LED being inspected, and an LED inspection method thereof. The LED inspection apparatus includes an ultraviolet emission unit emitting UV light to an LED, an image generation unit generating an image of the LED to which the UV light is emitted, and a control unit obtaining color or intensity information of the LED from the image of the LED and determining, based on the color information, whether the LED is defective.
摘要翻译：公开了一种发光二极管（LED）检查装置及其LED检查方法，其可以确定LED是否具有诸如泄漏电流的缺陷，而不与被检查的LED进行物理接触。 LED检查装置包括向LED发射UV光的紫外线发射单元，产生发出UV光的LED的图像的图像生成单元和从LED的图像获得LED的颜色或强度信息的控制单元 LED并基于颜色信息确定LED是否有缺陷。

5. 发明申请

US20100213480A1 LENS FOR LIGHT EMITTING DIODE PACKAGE AND LIGHT EMITTING DIODE PACKAGE HAVING THE SAME 有权
标题翻译：用于发光二极管封装和发光二极管封装的镜头
公开(公告)号：US20100213480A1
公开(公告)日：2010-08-26
申请号：US12607694
申请日：2009-10-28
申请人： Soo Jin JUNG , Joong Kon Son , Gwan Su Lee
发明人： Soo Jin JUNG , Joong Kon Son , Gwan Su Lee
IPC分类号： H01L33/58 , F21V5/04
CPC分类号： H01L33/58 , G02B19/0028 , G02B19/0061 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： A lens for a light emitting diode package and a light emitting diode package having the same have simple structures and increase light extraction efficiency by preventing light emitted from a light emitting diode chip from being internally reflected by a lens surface through a structural change in the lens surface.
摘要翻译：用于发光二极管封装的透镜和具有该透镜的发光二极管封装具有简单的结构并且通过防止从发光二极管芯片发出的光在透镜的结构变化中被透镜表面内部反射而提高光提取效率表面。

6. 发明申请

US20090136120A1 LED INSPECTION APPARATUS AND LED INSPECTION METHOD USING THE SAME 有权
标题翻译： LED检查装置和使用该检测装置的LED检查方法
公开(公告)号：US20090136120A1
公开(公告)日：2009-05-28
申请号：US12275581
申请日：2008-11-21
申请人： GRIGORY ONUSHKIN , Joong Kon Son , Jong Hoon Lim , Sang Su Hong
发明人： GRIGORY ONUSHKIN , Joong Kon Son , Jong Hoon Lim , Sang Su Hong
IPC分类号： G06K9/00
CPC分类号： G01N21/95 , G01N21/956
摘要： Disclosed are a light emitting diode (LED) inspection apparatus, which can determine whether an LED has a defect such as leakage current, without making physical contact with the LED being inspected, and an LED inspection method thereof. The LED inspection apparatus includes an ultraviolet emission unit emitting UV light to an LED, an image generation unit generating an image of the LED to which the UV light is emitted, and a control unit obtaining color or intensity information of the LED from the image of the LED and determining, based on the color information, whether the LED is defective
摘要翻译：公开了一种发光二极管（LED）检查装置及其LED检查方法，其可以确定LED是否具有诸如泄漏电流的缺陷，而不与被检查的LED进行物理接触。 LED检查装置包括向LED发射UV光的紫外线发射单元，产生发出UV光的LED的图像的图像生成单元和从LED的图像获得LED的颜色或强度信息的控制单元 LED并基于颜色信息确定LED是否有缺陷

7. 发明申请

US20130062638A1 SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：半导体发光器件
公开(公告)号：US20130062638A1
公开(公告)日：2013-03-14
申请号：US13228977
申请日：2011-09-09
申请人： Grigory ONUSHKIN , Oleg Ledyaev , Jong Hoon Lim , Joong Kon Son , Pun Jae Choi
发明人： Grigory ONUSHKIN , Oleg Ledyaev , Jong Hoon Lim , Joong Kon Son , Pun Jae Choi
IPC分类号： H01L33/58
CPC分类号： H01L33/382 , H01L27/15 , H01L2224/48463
摘要： A semiconductor light emitting device has a semiconductor laminate including first and second conductivity type semiconductor layers respectively providing first and second main surfaces and an active layer. The semiconductor laminate is divided into first and second regions. At least one contact hole is formed to pass through the active layer from the second main surface of the first region. A first electrode is formed on the second main surface to be connected to the first conductivity type semiconductor layer of the first region and the second conductivity type semiconductor layer of the second region. A second electrode is formed on the second main surface of the first region to be connected to the second conductivity type semiconductor layer of the first region and the first conductivity type semiconductor layer of the second region.
摘要翻译：半导体发光器件具有包括分别提供第一和第二主表面和有源层的第一和第二导电类型半导体层的半导体层叠体。半导体层叠体被分成第一和第二区域。形成至少一个接触孔以从第一区域的第二主表面穿过有源层。第一电极形成在第二主表面上，以连接到第一区域的第一导电类型半导体层和第二区域的第二导电类型半导体层。在与第一区域的第二导电类型半导体层和第二区域的第一导电类型半导体层连接的第一区域的第二主表面上形成第二电极。

8. 发明授权

US08253154B2 Lens for light emitting diode package 有权
标题翻译：镜头用于发光二极管封装
公开(公告)号：US08253154B2
公开(公告)日：2012-08-28
申请号：US12607694
申请日：2009-10-28
申请人： Soo Jin Jung , Joong Kon Son , Gwan Su Lee
发明人： Soo Jin Jung , Joong Kon Son , Gwan Su Lee
IPC分类号： H01L29/22 , H01L29/227 , H01L33/00 , H01L29/24 , H01L31/0203
CPC分类号： H01L33/58 , G02B19/0028 , G02B19/0061 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： A lens for a light emitting diode package and a light emitting diode package having the same have simple structures and increase light extraction efficiency by preventing light emitted from a light emitting diode chip from being internally reflected by a lens surface through a structural change in the lens surface.
摘要翻译：用于发光二极管封装的透镜和具有该透镜的发光二极管封装具有简单的结构并且通过防止从发光二极管芯片发出的光在透镜的结构变化中被透镜表面内部反射而提高光提取效率表面。

9. 发明授权

US08247980B2 LED driving circuit and light emitting diode array device 有权
标题翻译： LED驱动电路和发光二极管阵列器件
公开(公告)号：US08247980B2
公开(公告)日：2012-08-21
申请号：US12262801
申请日：2008-10-31
申请人： Young Jin Lee , Joong Kon Son , Hyung Kun Kim , Jung Ja Yang , Grigory Onushkin
发明人： Young Jin Lee , Joong Kon Son , Hyung Kun Kim , Jung Ja Yang , Grigory Onushkin
IPC分类号： F21S4/00 , H05B37/00 , F21V33/00
CPC分类号： H05B33/0821
摘要： There is provided an LED driving circuit. The LED driving circuit according to an aspect of the invention may include: at least one ladder circuit including: (n−1) number (here, n is a positive integer satisfying n≧2) of first branches provided between first and second junction points, and connected in-line with each other by n number of first middle junction points, (n−1) number of second branches arranged in parallel with the first branches, and connected in-line with each other by n number of second middle junction points between the first and second junction points, and n number of middle branches connecting m-th first and second middle junction points to each other, wherein at least one LED device is disposed on each of the first, second, and middle branches. Here, the number of LED devices included in each of the first and second branches is greater than the number of LED devices included in each of the middle branches.
摘要翻译：提供了LED驱动电路。根据本发明的一个方面的LED驱动电路可以包括：至少一个梯形电路，包括：设置在第一和第二连接点之间的第一分支的（n-1）数（这里，n是满足n≥2的正整数）并且通过与第一分支平行布置的n个第一中间连接点（n-1）个数量的第二分支彼此并联连接，并且通过n个第二中间连接线彼此直接连接第一和第二连接点之间的点，以及将第m个第一和第二中间连接点彼此连接的n个中间分支，其中至少一个LED装置设置在第一，第二和中间分支中的每一个上。这里，包括在第一和第二分支中的每个中的LED装置的数量大于包括在每个中间分支中的LED装置的数量。

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