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    • 6. 发明申请
    • Header-replaceable hybrid waveguide sensor
    • 头可更换混合波导传感器
    • US20080056641A1
    • 2008-03-06
    • US11896309
    • 2007-08-30
    • Soo Jin JungKweon Joung IlDong Ho ShinWon Hoe KooGwan Su Lee
    • Soo Jin JungKweon Joung IlDong Ho ShinWon Hoe KooGwan Su Lee
    • G02B6/26
    • G02B6/1221B82Y20/00G02B6/1226G02B6/26G02B2006/12138G02B2006/12147
    • A header-replaceable hybrid waveguide sensor comprises a header coupling section including a dielectric layer having an optical signal input section and an optical signal output section formed in one end thereof, the dielectric layer having two lines of protrusions formed on the upper surface thereof; and a polymer layer formed on and under the dielectric layer; and a sensor header including a dielectric layer having a protrusion formed on the upper surface thereof and a predetermined size of thin metal film provided therein; a polymer layer formed on and under the dielectric layer and having an opening formed in a portion corresponding to the thin metal film, the opening having a larger width than the thin metal film; and a receptor layer formed on the upper surface of the dielectric layer exposed by the opening.
    • 标题可替换的混合波导传感器包括一个头部耦合部分,其包括具有光信号输入部分的介质层和在其一端形成的光信号输出部分,该电介质层具有形成在其上表面上的两条突起线; 以及形成在电介质层上和下面的聚合物层; 以及传感器头,其包括在其上表面上形成有突起的介电层和设置在其中的预定尺寸的金属薄膜; 所述聚合物层形成在所述电介质层上和下面,并且具有形成在与所述薄金属膜相对应的部分中的开口,所述开口具有比所述薄金属膜宽的宽度; 以及形成在由开口暴露的电介质层的上表面上的受体层。
    • 7. 发明申请
    • Integrated optical isolator
    • 集成光隔离器
    • US20050089258A1
    • 2005-04-28
    • US10955778
    • 2004-09-30
    • Young-Il KimGwan-Su LeeSeok LeeDeok-Ha WooSun-Ho KimJae-Hun KimYoung-Tae ByunSung-Kyu KimMin-Chul ParkSeok-Ho Song
    • Young-Il KimGwan-Su LeeSeok LeeDeok-Ha WooSun-Ho KimJae-Hun KimYoung-Tae ByunSung-Kyu KimMin-Chul ParkSeok-Ho Song
    • G02B6/12G02B6/26G02B27/28G02F1/095G02F1/21H01P1/36G02F1/295G02B6/42
    • G02F1/0955G02B6/2746G02B2006/12157G02F2001/212G02F2202/32
    • A semiconductor magneto-optical integrated optical isolator is realized with a Mach-Zehnder integrated optical isolator in which a cladding and a guiding layer of light waveguide are composed of magnetic material. Here, it uses nonreciprocal phase shift created when light propagation direction is changed. The fundamental element deriving this nonreciprocal phase shift is the Faraday rotation of magnetic material. Therefore, it is essential to have large Faraday rotation in order to fabricate a short length integrated optical isolator. However, since magnetic material of bulk state does not have large Faraday rotation, there need the length of several mm units for fabricating an isolator. The invention is to realize an integrated optical isolator using magneto-optical crystal in which magneto-optical material and dielectric substance have periodic structure. By the above reasons, magneto-optical crystal becomes to have bigger Faraday rotation than that of bulk state magnetic materials; thereby nonreciprocal phase shift becomes large and a short length integrated optical isolator can be fabricated. Thus, in order to reduce the device length of a Mach-Zehnder optical isolator, magneto-optical crystal having large Faraday rotation is used.
    • 用Mach-Zehnder集成光隔离器实现半导体磁光集成光隔离器,其中包层和光波导的引导层由磁性材料组成。 这里,当光传播方向改变时,使用不可逆相移。 导出这种非相互相移的基本因素是磁性材料的法拉第旋转。 因此,为了制造短长度的集成光隔离器,必须具有大的法拉第旋转。 然而,由于体状态的磁性材料不具有大的法拉第旋转,所以需要用于制造隔离器的几mm单位的长度。 本发明是实现使用磁光晶体的集成光隔离器,其中磁光材料和电介质具有周期性的结构。 由于上述原因,磁光晶体变得具有比体状磁性材料更大的法拉第旋转; 从而非相互相移变大,并且可以制造短长度的集成光隔离器。 因此,为了减小Mach-Zehnder光隔离器的器件长度,使用具有大法拉第旋转的磁光晶体。
    • 8. 发明申请
    • Integrated optical isolator using multi-mode interference structure
    • 集成光隔离器采用多模干涉结构
    • US20050094923A1
    • 2005-05-05
    • US10955980
    • 2004-09-30
    • Young-Il KimTae-Hoon YoonSeok LeeDeok-Ha WooSun-Ho KimHi-Jung KimGwan-Su LeeSung-Kyu KimMin-Chul ParkChang-Wan Son
    • Young-Il KimTae-Hoon YoonSeok LeeDeok-Ha WooSun-Ho KimHi-Jung KimGwan-Su LeeSung-Kyu KimMin-Chul ParkChang-Wan Son
    • G02B6/12G02B6/28G02B27/28G02F1/095
    • G02F1/0955G02B6/2813G02F2001/212G02F2001/217
    • The invention relates to a fabrication of an integrated optical isolator using a Multi-Mode Interference (MMI) structure and a cladding layer comprising magneto-optical material, which remove needless reflection generated in the course of light propagation and make short length integration possible. Thus, the invention uses nonreciprocal phase shift effect that optical characteristics are altered according to the direction of light propagation. In order to fabricate a light waveguide optical isolator, an input light should be separated into two light waveguides having the same power. That is, for the purpose of reducing the length of optical isolator device, the waveguide length needed to separate an input light into two light waveguides should be shortened. Since the light waveguide length of MMI structure is much shorter than the length of Mach-Zehnder light waveguide for separating an input light into two waveguides, the length of optical isolator device using MMI structure can be reduced. Moreover, since MMI structure exhibits big permissible error in fabrication, the invention has the advantage that it is simple to fabricate the device.
    • 本发明涉及使用多模干涉(MMI)结构的集成光隔离器的制造和包括磁光材料的覆层,其消除了在光传播过程中产生的不必要的反射并且使短长度集成成为可能。 因此,本发明使用不可逆相移效应,光学特性根据光传播的方向而改变。 为了制造光波导光隔离器,输入光应该分成具有相同功率的两个光波导。 也就是说,为了减小光隔离器的长度,应该缩短将输入光分成两个光波导所需的波导长度。 由于MMI结构的光波导长度比用于将输入光分离为两个波导的马赫 - 曾德尔光波导的长度短得多,所以可以减少使用MMI结构的光隔离器装置的长度。 此外,由于MMI结构在制造中表现出大的允许误差,所以本发明的优点在于制造器件是简单的。
    • 9. 发明授权
    • Header-replaceable hybrid waveguide sensor
    • 头可更换混合波导传感器
    • US07512293B2
    • 2009-03-31
    • US11896309
    • 2007-08-30
    • Soo Jin JungIl Kweon JoungDong Ho ShinWon Hoe KooGwan Su Lee
    • Soo Jin JungIl Kweon JoungDong Ho ShinWon Hoe KooGwan Su Lee
    • G02B6/26
    • G02B6/1221B82Y20/00G02B6/1226G02B6/26G02B2006/12138G02B2006/12147
    • A header-replaceable hybrid waveguide sensor comprises a header coupling section including a dielectric layer having an optical signal input section and an optical signal output section formed in one end thereof, the dielectric layer having two lines of protrusions formed on the upper surface thereof; and a polymer layer formed on and under the dielectric layer; and a sensor header including a dielectric layer having a protrusion formed on the upper surface thereof and a predetermined size of thin metal film provided therein; a polymer layer formed on and under the dielectric layer and having an opening formed in a portion corresponding to the thin metal film, the opening having a larger width than the thin metal film; and a receptor layer formed on the upper surface of the dielectric layer exposed by the opening.
    • 标题可替换的混合波导传感器包括一个头部耦合部分,其包括具有光信号输入部分的介质层和在其一端形成的光信号输出部分,该电介质层具有形成在其上表面上的两条突起线; 以及形成在电介质层上和下面的聚合物层; 以及传感器头,其包括在其上表面上形成有突起的介电层和设置在其中的预定尺寸的金属薄膜; 所述聚合物层形成在所述电介质层上和下面,并且具有形成在与所述薄金属膜相对应的部分中的开口,所述开口具有比所述薄金属膜宽的宽度; 以及形成在由开口暴露的电介质层的上表面上的受体层。