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1. 发明授权

US08859314B2 Method of manufacturing semiconductor light emitting device 有权
标题翻译：制造半导体发光器件的方法
公开(公告)号：US08859314B2
公开(公告)日：2014-10-14
申请号：US13523571
申请日：2012-06-14
申请人： Jong Sun Maeng , Ki Ho Park , Bum Joon Kim , Hyun Seok Ryu , Jung Hyun Lee , Boung Kyun Kim , Ki Sung Kim , Suk Ho Yoon
发明人： Jong Sun Maeng , Ki Ho Park , Bum Joon Kim , Hyun Seok Ryu , Jung Hyun Lee , Boung Kyun Kim , Ki Sung Kim , Suk Ho Yoon
IPC分类号： H01L33/32 , H01L33/00
CPC分类号： H01L33/007 , H01L21/67109 , H01L21/68764 , H01L21/68771 , H01L33/0079
摘要： There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate.
摘要翻译：提供一种制造半导体发光器件的方法，该方法包括：在半导体生长衬底上依次生长第一导电类型半导体层，有源层和第二导电类型半导体层，以形成发光部分; 在要耦合到所述发光部分的所述第二导电类型半导体层上形成支撑部分; 将半导体生长衬底与发光部分分离; 以及向所述半导体生长衬底施加蚀刻气体以从所述半导体生长衬底的表面去除所述第一导电类型半导体层的残留物。

2. 发明申请

US20120097184A1 METHOD FOR RECYCLING WAFER 审中-公开
标题翻译：回收方法
公开(公告)号：US20120097184A1
公开(公告)日：2012-04-26
申请号：US13275099
申请日：2011-10-17
申请人： Ki Ho PARK , Kong Tan Sa , Suk Ho Yoon , Hyun Seok Ryu , Bo A Shin
发明人： Ki Ho PARK , Kong Tan Sa , Suk Ho Yoon , Hyun Seok Ryu , Bo A Shin
IPC分类号： H01L21/02 , B08B5/00
CPC分类号： H01L21/02032
摘要： A method for recycling a wafer is provided. The method removes residues remaining on the wafer separated from a semiconductor layer, using HCl and Cl2 gases under high temperature and low pressure conditions. According to the method, damage of a surface of the wafer is minimized. In addition, since reduction in thickness and an outer diameter of the wafer is minimized, a number of attempts at reprocessing the wafer may be increased.
摘要翻译：提供一种再循环晶片的方法。该方法使用HCl和Cl2气体在高温和低压条件下除去剩余在半导体层上残留的晶片上的残留物。根据该方法，使晶片表面的损伤最小化。此外，由于晶片的厚度和外径的减小被最小化，所以可以增加重新处理晶片的尝试次数。

3. 发明申请

US20100117061A1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20100117061A1
公开(公告)日：2010-05-13
申请号：US12350188
申请日：2009-01-07
申请人： Suk Ho YOON , Ki Ho Park , Joong Kon Son
发明人： Suk Ho YOON , Ki Ho Park , Joong Kon Son
IPC分类号： H01L29/12
CPC分类号： H01L33/06
摘要： There is provided a nitride semiconductor device. A nitride semiconductor device according to an aspect of the invention may include: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; an active layer provided between the n-type and p-type nitride semiconductor layers and having quantum well layers and quantum barrier layers alternately stacked on each other; and an electron blocking layer provided between the active layer and the p-type nitride semiconductor layer, and having a plurality of first nitride layers formed of a material having a higher band gap energy than the quantum barrier layers and a plurality of second nitride layers formed of a material having a lower band gap energy than the first nitride layers, the first and second nitride layers alternately stacked on each other to form a stacked structure, wherein the plurality of first nitride layers have energy levels bent at predetermined inclinations, and with greater proximity to the p-type nitride semiconductor layer, the first nitride layers have a smaller inclination of the energy level.
摘要翻译：提供一种氮化物半导体器件。根据本发明的一个方面的氮化物半导体器件可以包括：n型氮化物半导体层; p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间并且具有彼此交替堆叠的量子阱层和量子势垒层的有源层; 以及设置在有源层和p型氮化物半导体层之间的电子阻挡层，并且具有由具有比量子势垒层更高的带隙能量的材料形成的多个第一氮化物层和形成的多个第二氮化物层具有比第一氮化物层低的带隙能量的材料，第一和第二氮化物层彼此交替堆叠以形成堆叠结构，其中多个第一氮化物层具有以预定倾斜度弯曲的能级，并且具有更大的靠近p型氮化物半导体层，第一氮化物层具有较小的能级倾斜度。

4. 发明申请

US20140047823A1 MICROACTUATOR USING BUBBLE GROWTH AND DESTRUCTION 有权
标题翻译：微生物使用泡沫生长和破坏
公开(公告)号：US20140047823A1
公开(公告)日：2014-02-20
申请号：US14113972
申请日：2012-05-11
申请人： Sung-Il Kim , Ki-Ho Park , Won-Pyo Chun , Kye-Jung Lee
发明人： Sung-Il Kim , Ki-Ho Park , Won-Pyo Chun , Kye-Jung Lee
IPC分类号： F15B21/04
CPC分类号： F15B21/042 , F03G7/06 , F15B15/00 , F15B2015/208 , Y10T137/2196
摘要： Disclosed is a microactuator using growth and destruction of bubbles including a first chamber provided with a heating plate installed at an exterior of a bottom surface of the first chamber to generate heat, and filled with a first liquid working fluid such that bubbles are caused, by heat, to grow at an interface of a cavity on an inner surface of the first chamber to be heated, a second chamber provided with a heating plate installed at an exterior of a bottom surface of the second chamber to generate heat, and filled with a second liquid working fluid such that bubbles are caused, by heat, to grow at an interface of a cavity on an inner surface of the second chamber to be heated, a connection path to connect the first chamber and the second chamber to each other, the connection path being provided therein with a moving member adapted to isolate the first and second chambers from each other and to move when internal pressure changes according to growth and destruction of the bubbles, a first subline to connect the connection path to the second chamber such that the first working fluid moves the moving member to one side and is guided to the second chamber according to increase in the internal pressure by growth of the bubbles in the first chamber, a second subline to connect the connection path to the first chamber such that the second working fluid moves the moving member to the other side and is guided to the first chamber according to increase in internal pressure by growth of the bubbles in the second chamber, and a plurality of cooling means installed on the first subline and the second subline to destroy bubbles produced in the first and second chambers.
摘要翻译：公开了一种使用气泡生长和破坏的微致动器，其包括设置有安装在第一室的底表面的外部的加热板的第一室，以产生热量，并且填充有引起气泡的第一液体工作流体，通过加热，以在待加热的第一室的内表面上的腔的界面处生长;第二室，设置有加热板，该加热板安装在第二室的底表面的外部以产生热量，并且填充有第二液体工作流体，使得通过热引起气泡在待加热的第二室的内表面上的空腔的界面处生长，将第一室和第二室彼此连接的连接路径，连接路径在其中设置有适于将第一和第二腔室彼此隔离并且当内部压力根据气泡的生长和破坏而改变时移动的移动构件连接路径到第二室的第一子线，使得第一工作流体将移动构件移动到一侧，并且通过第一室中的气泡的增长随着内部压力的增加而被引导到第二室，将连接路径连接到第一室的第二子管，使得第二工作流体将移动构件移动到另一侧，并且通过第二室中的气泡的生长随内部压力的增加而被引导到第一室;以及多个冷却装置，安装在第一副线和第二子线上，以破坏在第一和第二室中产生的气泡。

5. 发明申请

US20110127684A1 APPARATUS AND METHOD FOR MANUFACTURING MICRO LENS ARRAY 有权
标题翻译：用于制造微透镜阵列的装置和方法
公开(公告)号：US20110127684A1
公开(公告)日：2011-06-02
申请号：US12922628
申请日：2010-06-03
申请人： Han Sup Lee , Byoung Guk Park , Yi Seul Yang , Ki Woon Choi , Joon Ho Lee , Ki Ho Park , Hoi Chang Yang
发明人： Han Sup Lee , Byoung Guk Park , Yi Seul Yang , Ki Woon Choi , Joon Ho Lee , Ki Ho Park , Hoi Chang Yang
IPC分类号： B29D11/00 , B29C35/02 , B29C39/42
CPC分类号： B29D11/00365 , B29D11/00298 , G02B3/0031
摘要： An apparatus for manufacturing a micro lens array, wherein lenses having various standards are easily manufactured by forming a micro lens array by adjusting a vacuum condition in a vacuum chamber. The apparatus including: a vacuum chamber including a vacuum space therein; a vacuum unit for forming a vacuum inside the vacuum chamber; an upper frame disposed inside the vacuum chamber and to which a substrate is installed on a lower surface of the upper frame; an elevator for ascending and descending the upper frame; a lower frame disposed below the upper frame; a master plate disposed on the lower frame and includes a plurality of molding grooves on an upper surface of the master plate; and a heater installed to a side of the master plate to heat up the master plate.
摘要翻译：一种用于制造微透镜阵列的装置，其中通过调节真空室中的真空状态来形成微透镜阵列容易地制造具有各种标准的透镜。该装置包括：真空室，其中包括真空空间; 用于在真空室内形成真空的真空单元; 设置在所述真空室内的上框架，并且将基板安装在所述上框架的下表面上; 用于升高和降低上部框架的电梯; 设置在上框架下方的下框架; 主板，其设置在所述下框架上，并且在所述主板的上表面上包括多个模制槽; 以及安装在主板侧面以加热主板的加热器。

6. 发明授权

US07868316B2 Nitride semiconductor device 有权
标题翻译：氮化物半导体器件
公开(公告)号：US07868316B2
公开(公告)日：2011-01-11
申请号：US12350188
申请日：2009-01-07
申请人： Suk Ho Yoon , Ki Ho Park , Joong Kon Son
发明人： Suk Ho Yoon , Ki Ho Park , Joong Kon Son
IPC分类号： H01L33/06
CPC分类号： H01L33/06
摘要： There is provided a nitride semiconductor device. A nitride semiconductor device according to an aspect of the invention may include: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; an active layer provided between the n-type and p-type nitride semiconductor layers and having quantum well layers and quantum barrier layers alternately stacked on each other; and an electron blocking layer provided between the active layer and the p-type nitride semiconductor layer, and having a plurality of first nitride layers formed of a material having a higher band gap energy than the quantum barrier layers and a plurality of second nitride layers formed of a material having a lower band gap energy than the first nitride layers, the first and second nitride layers alternately stacked on each other to form a stacked structure, wherein the plurality of first nitride layers have energy levels bent at predetermined inclinations, and with greater proximity to the p-type nitride semiconductor layer, the first nitride layers have a smaller inclination of the energy level.
摘要翻译：提供一种氮化物半导体器件。根据本发明的一个方面的氮化物半导体器件可以包括：n型氮化物半导体层; p型氮化物半导体层; 设置在n型和p型氮化物半导体层之间并且具有彼此交替堆叠的量子阱层和量子势垒层的有源层; 以及设置在有源层和p型氮化物半导体层之间的电子阻挡层，并且具有由具有比量子势垒层更高的带隙能量的材料形成的多个第一氮化物层和形成的多个第二氮化物层具有比第一氮化物层低的带隙能量的材料，第一和第二氮化物层彼此交替堆叠以形成堆叠结构，其中多个第一氮化物层具有以预定倾斜度弯曲的能级，并且具有更大的靠近p型氮化物半导体层，第一氮化物层具有较小的能级倾斜度。

7. 发明申请

US20070025660A1 All-optical variable optical attenuator 审中-公开
标题翻译：全光可变光衰减器
公开(公告)号：US20070025660A1
公开(公告)日：2007-02-01
申请号：US11193669
申请日：2005-07-29
申请人： Su-Nam Lee , Se-Ho Lee , Ki-Ho Park , Seong-Jae Boo
发明人： Su-Nam Lee , Se-Ho Lee , Ki-Ho Park , Seong-Jae Boo
IPC分类号： G02B6/34 , H04J14/02
CPC分类号： G02B6/34 , G02B6/14 , G02B6/266 , G02B6/3594 , G02F1/3523 , G02F2203/48 , H01S3/06754 , H01S3/09415 , H01S3/1618
摘要： Disclosed is an all-optical variable optical attenuator. The all-optical variable optical attenuator includes a nonlinear optical fiber where a pair of long-period gratings is formed in a pre-determined pattern. Alternatively, the variable optical attenuator may include a pair of optical fibers where a long-period grating is formed in each optical fiber in a pre-determined pattern to form a pair of long-period gratings on the whole, and a nonlinear optical fiber fusion-spliced between one ends of the respective optical fibers. The core layer of the nonlinear optical fiber contains semiconductor particles having a size of nanometers, a metallic particle having a size of nanometers, or a rare-earth element.
摘要翻译：公开了一种全光可变光衰减器。全光可变光衰减器包括非线性光纤，其中以预定图案形成一对长周期光栅。或者，可变光衰减器可以包括一对光纤，其中在预定图案中在每个光纤中形成长周期光栅以形成一对整体的长周期光栅，并且非线性光纤熔接在相应光纤的一端之间切割。非线性光纤的芯层包含具有纳米尺寸的半导体颗粒，具有纳米尺寸的金属颗粒或稀土元素。

8. 发明申请

US20060211681A1 Adenosine deaminase inhibitor and novel bacillus sp. iada-7 strain which produces it 失效
标题翻译：腺苷脱氨酶抑制剂和新型芽孢杆菌产生它的iada-7菌株
公开(公告)号：US20060211681A1
公开(公告)日：2006-09-21
申请号：US10550301
申请日：2004-03-24
申请人： Gwang Lee , Young Ahn , Ki Ho Park , Hong Ki Jun
发明人： Gwang Lee , Young Ahn , Ki Ho Park , Hong Ki Jun
IPC分类号： A61K31/55 , C12P17/00 , C07D245/02 , C12N1/21
CPC分类号： C07D243/04
摘要： The present invention relates to an adenosine deaminase inhibitor and a novel Bacillus sp. strain which produces it. Particularly, the present 5 invention relates to the adenosine deaminase inhibitor, and the novel Bacillus sp. IADA-7 producing the above adenosine deaminase inhibitor. The adenosine deaminase inhibitor of the present Invention shows superior antibacterial and anticancer activities to the previously reported adenosine deaminase inhibitors.
摘要翻译：本发明涉及腺苷脱氨酶抑制剂和新型芽孢杆菌属产生它的菌株特别地，本发明涉及腺苷脱氨酶抑制剂和新型芽孢杆菌属。产生上述腺苷脱氨酶抑制剂的IADA-7。本发明的腺苷脱氨酶抑制剂对先前报道的腺苷脱氨酶抑制剂显示出优异的抗菌活性和抗癌活性。

9. 发明授权

US08501054B2 Apparatus and method for manufacturing micro lens array 有权
标题翻译：用于制造微透镜阵列的装置和方法
公开(公告)号：US08501054B2
公开(公告)日：2013-08-06
申请号：US12922628
申请日：2010-06-03
申请人： Han Sup Lee , Byoung Guk Park , Yi Seul Yang , Ki Woon Choi , Joon Ho Lee , Ki Ho Park , Hoi Chang Yang
发明人： Han Sup Lee , Byoung Guk Park , Yi Seul Yang , Ki Woon Choi , Joon Ho Lee , Ki Ho Park , Hoi Chang Yang
IPC分类号： B29D11/00
CPC分类号： B29D11/00365 , B29D11/00298 , G02B3/0031
摘要： An apparatus for manufacturing a micro lens array, wherein lenses having various standards are easily manufactured by forming a micro lens array by adjusting a vacuum condition in a vacuum chamber. The apparatus including: a vacuum chamber including a vacuum space therein; a vacuum unit for forming a vacuum inside the vacuum chamber; an upper frame disposed inside the vacuum chamber and to which a substrate is installed on a lower surface of the upper frame; an elevator for ascending and descending the upper frame; a lower frame disposed below the upper frame; a master plate disposed on the lower frame and includes a plurality of molding grooves on an upper surface of the master plate; and a heater installed to a side of the master plate to heat up the master plate.
摘要翻译：一种用于制造微透镜阵列的装置，其中通过调节真空室中的真空状态来形成微透镜阵列容易地制造具有各种标准的透镜。该装置包括：真空室，其中包括真空空间; 用于在真空室内形成真空的真空单元; 设置在所述真空室内的上框架，并且将基板安装在所述上框架的下表面上; 用于升高和降低上部框架的电梯; 设置在上框架下方的下框架; 主板，其设置在所述下框架上，并且在所述主板的上表面上包括多个模制槽; 以及安装在主板侧面以加热主板的加热器。

10. 发明申请

US20120322188A1 METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：制造半导体发光器件的方法
公开(公告)号：US20120322188A1
公开(公告)日：2012-12-20
申请号：US13523571
申请日：2012-06-14
申请人： Jong Sun MAENG , Ki Ho PARK , Bum Joon KIM , Hyun Seok RYU , Jung Hyun LEE , Boung Kyun KIM , Ki Sung KIM , Suk Ho YOON
发明人： Jong Sun MAENG , Ki Ho PARK , Bum Joon KIM , Hyun Seok RYU , Jung Hyun LEE , Boung Kyun KIM , Ki Sung KIM , Suk Ho YOON
IPC分类号： H01L33/32
CPC分类号： H01L33/007 , H01L21/67109 , H01L21/68764 , H01L21/68771 , H01L33/0079
摘要： There is provided a method of manufacturing a semiconductor light emitting device, the method including: sequentially growing a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer on a semiconductor growth substrate to form a light emitting part; forming a support part on the second conductivity type semiconductor layer to be coupled to the light emitting part; separating the semiconductor growth substrate from the light emitting part; and applying an etching gas to the semiconductor growth substrate to remove a residue of the first conductivity type semiconductor layer from a surface of the semiconductor growth substrate.
摘要翻译：提供一种制造半导体发光器件的方法，该方法包括：在半导体生长衬底上依次生长第一导电类型半导体层，有源层和第二导电类型半导体层，以形成发光部分; 在要耦合到所述发光部分的所述第二导电类型半导体层上形成支撑部分; 将半导体生长衬底与发光部分分离; 以及向所述半导体生长衬底施加蚀刻气体以从所述半导体生长衬底的表面去除所述第一导电类型半导体层的残留物。

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