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    • 4. 发明申请
    • POWER SEMICONDUCTOR MODULE
    • 功率半导体模块
    • US20130069108A1
    • 2013-03-21
    • US13313713
    • 2011-12-07
    • Young Ki LEEDong Soo SEOKwang Soo KIMYoung Hoon KWAK
    • Young Ki LEEDong Soo SEOKwang Soo KIMYoung Hoon KWAK
    • H01L29/739
    • H01L23/4824H01L29/7393H01L2924/0002H01L2924/00
    • Disclosed herein is a power semiconductor module including: a circuit board having gate, emitter, and collector patterns formed thereon; a first semiconductor chip mounted on the circuit board, having gate and emitter terminals each formed on one surface thereof, and having a collector terminal formed on the other surface thereof; a second semiconductor chip mounted on the first semiconductor chip, having a cathode terminal formed on one surface thereof, and having an anode terminal formed on the other surface thereof; a first conductive connection member having one end disposed between the collector terminal of the first semiconductor chip and the cathode terminal of the second semiconductor chip and the other end contacting the collector pattern of the circuit board; and a second conductive connection member having one end contacting the anode terminal of the second semiconductor chip and the other end contacting the emitter pattern of the circuit board.
    • 本文公开了一种功率半导体模块,包括:电路板,其上形成有栅极,发射极和集电极图案; 安装在所述电路板上的第一半导体芯片,在其一个表面上形成有栅极和发射极端子,并且在其另一个表面上形成集电极端子; 安装在所述第一半导体芯片上的第二半导体芯片,具有在其一个表面上形成的阴极端子,并且在其另一个表面上形成阳极端子; 第一导电连接构件,其一端设置在第一半导体芯片的集电极端子和第二半导体芯片的阴极端子之间,另一端接触电路板的集电体图案; 以及第二导电连接构件,其一端接触第二半导体芯片的阳极端子,另一端接触电路板的发射极图案。