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1. 发明申请

US20050020067A1 Chemistry for chemical vapor deposition of titanium containing films 有权
标题翻译：含钛膜的化学气相沉积化学
公开(公告)号：US20050020067A1
公开(公告)日：2005-01-27
申请号：US10913556
申请日：2004-08-06
申请人： Sujit Sharan , Howard Rhodes , Philip Ireland , Gurtej Sandhu
发明人： Sujit Sharan , Howard Rhodes , Philip Ireland , Gurtej Sandhu
IPC分类号： C23C16/14 , C23C16/34 , C23C16/42 , H01L21/285 , H01L21/768 , H01L21/3205 , H01L21/44 , H01L21/4763
CPC分类号： H01L21/76843 , C23C16/14 , C23C16/34 , C23C16/42 , H01L21/28568
摘要： Titanium-containing films exhibiting excellent uniformity and step coverage are deposited on semiconductor wafers in a cold wall reactor which has been modified to discharge plasma into the reaction chamber. Titanium tetrabromide, titanium tetraiodide, or titanium tetrachloride, along with hydrogen, enter the reaction chamber and come in contact with a heated semiconductor wafer, thereby depositing a thin titanium-containing film on the wafer's surface. Step coverage and deposition rate are enhanced by the presence of the plasma. The use of titanium tetrabromide or titanium tetraiodide instead of titanium tetrachloride also increases the deposition rate and allows for a lower reaction temperature. Titanium silicide and titanium nitride can also be deposited by this method by varying the gas incorporated with the titanium precursors.
摘要翻译：表现出优异的均匀性和阶梯覆盖率的含钛膜沉积在冷壁反应器中的半导体晶片上，该冷壁反应器已被修改以将等离子体排放到反应室中。四溴化钛，四碘化钛或四氯化钛与氢一起进入反应室并与加热的半导体晶片接触，从而在晶片的表面上沉积薄的含钛膜。通过等离子体的存在增强了步骤覆盖和沉积速率。使用四溴化钛或四碘化钛代替四氯化钛也增加了沉积速率并允许较低的反应温度。也可以通过这种方法通过改变掺入钛前体的气体来沉积硅化钛和氮化钛。

2. 发明授权

US5750012A Multiple species sputtering for improved bottom coverage and improved sputter rate 失效
公开(公告)号：US5750012A
公开(公告)日：1998-05-12
申请号：US627262
申请日：1996-04-04
申请人： P. J. Ireland , Howard Rhodes , Sujit Sharan , Sukesh Sandhu , Tim O'Brien , Tim Johnson
发明人： P. J. Ireland , Howard Rhodes , Sujit Sharan , Sukesh Sandhu , Tim O'Brien , Tim Johnson
IPC分类号： C23C14/04 , C23C14/35 , H01L21/762 , H01L21/768 , C23C14/34
CPC分类号： C23C14/35 , C23C14/046 , H01L21/762 , H01L21/76877
摘要： An improved sputtering process increases the perpendicularity of the sputtered flux to the target surface by bombarding the target with both low and high mass ions, with low mass ions predominating, packing the target with both low and high mass implanted ions, and causing target atoms ejected as a result of high mass incident ions to have a higher probability of perpendicular or near perpendicular ejection. An alternative improved sputtering process bombards the target with both low and high mass ions, with high mass ions predominating, resulting in a higher sputter rate than achievable with either the high or low mass species alone. Including in either process as the high or the low mass species a species having a lower ionization energy than a standard species allows a reduced pressure plasma, resulting in less scattering of the sputtered flux. A low ionization energy species may also be employed to assist in striking a plasma before sputtering by a single species during deposition.

3. 发明授权

US6083358A Multiple species sputtering for improved bottom coverage and improved sputter rate 失效
标题翻译：用于改善底部覆盖和改善溅射速率的多种溅射
公开(公告)号：US6083358A
公开(公告)日：2000-07-04
申请号：US53354
申请日：1998-04-01
申请人： P. J. Ireland , Howard Rhodes , Sujit Sharan , Sukesh Sandhu , Tim O'Brien , Tim Johnson
发明人： P. J. Ireland , Howard Rhodes , Sujit Sharan , Sukesh Sandhu , Tim O'Brien , Tim Johnson
IPC分类号： C23C14/04 , C23C14/35 , H01L21/762 , H01L21/768 , C23C14/34
CPC分类号： C23C14/35 , C23C14/046 , H01L21/762 , H01L21/76877
摘要： An improved sputtering process increases the perpendicularity of the sputtered flux to the target surface by bombarding the target with both low and high mass ions, with low mass ions predominating, packing the target with both low and high mass implanted ions, and causing target atoms ejected as a result of high mass incident ions to have a higher probability of perpendicular or near perpendicular ejection. An alternative improved sputtering process bombards the target with both low and high mass ions, with high mass ions predominating, resulting in a higher sputter rate than achievable with either the high or low mass species alone. Including in either process as the high or the low mass species a species having a lower ionization energy than a standard species allows a reduced pressure plasma, resulting in less scattering of the sputtered flux. A low ionization energy species may also be employed to assist in striking a plasma before sputtering by a single species during deposition.
摘要翻译：改进的溅射工艺通过以低质量离子和高质量离子轰击靶，通过以低质量离子为主来增加溅射通量对目标表面的垂直度，用低质量和高质量注入离子填充目标，并引起目标原子喷出作为高质量入射离子的结果具有更高的垂直或近似垂直喷射的概率。一种替代的改进的溅射工艺用低和高质量离子轰击靶，以高质量离子为主，导致比单独使用高质量或低质量物质可实现的更高的溅射速率。在任一过程中，作为高质量或低质量物质，具有比标准物质更低的电离能的物质允许减压等离子体，导致溅射通量的较少散射。也可以使用低电离能种来在沉积期间通过单一物质在溅射之前帮助击打等离子体。

4. 发明授权

US06398923B1 Multiple species sputtering method 失效
标题翻译：多种溅射法
公开(公告)号：US06398923B1
公开(公告)日：2002-06-04
申请号：US09609441
申请日：2000-07-03
申请人： P. J. Ireland , Howard Rhodes , Sujit Sharan , Sukesh Sandhu , Tim O'Brien , Tim Johnson
发明人： P. J. Ireland , Howard Rhodes , Sujit Sharan , Sukesh Sandhu , Tim O'Brien , Tim Johnson
IPC分类号： C23C1434
CPC分类号： C23C14/35 , C23C14/046 , H01L21/762 , H01L21/76877
摘要： An improved sputtering process increases the perpendicularity of the sputtered flux to the target surface by bombarding the target with both low and high mass ions, with low mass ions predominating, packing the target with both low and high mass implanted ions, and causing target atoms ejected as a result of high mass incident ions to have a higher probability of perpendicular or near perpendicular ejection. An alternative improved sputtering process bombards the target with both low and high mass ions, with high mass ions predominating, resulting in a higher sputter rate than achievable with either the high or low mass species alone. Including in either process as the high or the low mass species a species having a lower ionization energy than a standard species allows a reduced pressure plasma, resulting in less scattering of the sputtered flux. A low ionization energy species may also be employed to assist in striking a plasma before sputtering by a single species during deposition.
摘要翻译：改进的溅射工艺通过以低质量离子和高质量离子轰击靶，通过以低质量离子为主来增加溅射通量对目标表面的垂直度，用低质量和高质量注入离子填充目标，并引起目标原子喷出作为高质量入射离子的结果具有更高的垂直或近似垂直喷射的概率。一种替代的改进的溅射工艺用低和高质量离子轰击靶，以高质量离子为主，导致比单独使用高质量或低质量物质可实现的更高的溅射速率。在任一过程中，作为高质量或低质量物质，具有比标准物质更低的电离能的物质允许减压等离子体，导致溅射通量的较少散射。也可以使用低电离能种来在沉积期间通过单一物质在溅射之前帮助击打等离子体。

5. 发明申请

US20080089647A1 RESONATOR FOR THERMO OPTIC DEVICE 有权
标题翻译：热电偶装置谐振器
公开(公告)号：US20080089647A1
公开(公告)日：2008-04-17
申请号：US11951796
申请日：2007-12-06
申请人： Gurtej Sandhu , Guy Blalock , Howard Rhodes
发明人： Gurtej Sandhu , Guy Blalock , Howard Rhodes
IPC分类号： G02B6/26
CPC分类号： G02B6/132 , G02B6/12004 , G02B6/12007 , G02B6/136 , G02F1/011 , G02F1/0147 , G02F2203/15
摘要： A resonator for thermo optic devices is formed in the same process steps as a waveguide and is formed in a depression of a lower cladding while the waveguide is formed on a surface of the lower cladding. Since upper surfaces of the resonator and waveguide are substantially coplanar, the aspect ratio, as between the waveguide and resonator in an area where the waveguide and resonator front one another, decreases thereby increasing the bandwidth of the resonator. The depression is formed by photomasking and etching the lower cladding before forming the resonator and waveguide. Pluralities of resonators are also taught that are formed in a plurality of depressions of the lower cladding. To decrease resonator bandwidth, waveguide(s) are formed in the depression(s) of the lower cladding while the resonator is formed on the surface. Thermo optic devices formed with these resonators are also taught.
摘要翻译：用于热光器件的谐振器以与波导相同的工艺步骤形成，并且形成在下包层的凹陷中，同时波导形成在下包层的表面上。由于谐振器和波导的上表面基本上是共面的，因此在波导和谐振器彼此前向的区域中的波导和谐振器之间的纵横比减小，从而增加了谐振器的带宽。在形成谐振器和波导之前，通过光掩模和蚀刻下部包层形成凹陷。还教导了形成在下部包层的多个凹部中的多个谐振器。为了减小谐振器带宽，当在表面上形成谐振器时，在下包层的凹陷中形成波导。还教导了用这些谐振器形成的热光器件。

6. 发明申请

US20060263027A1 Resonator for thermo optic device 失效
公开(公告)号：US20060263027A1
公开(公告)日：2006-11-23
申请号：US11493717
申请日：2006-07-26
申请人： Gurtej Sandhu , Guy Blalock , Howard Rhodes
发明人： Gurtej Sandhu , Guy Blalock , Howard Rhodes
IPC分类号： G02B6/10
CPC分类号： G02B6/132 , G02B6/12004 , G02B6/12007 , G02B6/136 , G02F1/011 , G02F1/0147 , G02F2203/15
摘要： A resonator for thermo optic devices is formed in the same process steps as a waveguide and is formed in a depression of a lower cladding while the waveguide is formed on a surface of the lower cladding. Since upper surfaces of the resonator and waveguide are substantially coplanar, the aspect ratio, as between the waveguide and resonator in an area where the waveguide and resonator front one another, decreases thereby increasing the bandwidth of the resonator. The depression is formed by photomasking and etching the lower cladding before forming the resonator and waveguide. Pluralities of resonators are also taught that are formed in a plurality of depressions of the lower cladding. To decrease resonator bandwidth, waveguide(s) are formed in the depression(s) of the lower cladding while the resonator is formed on the surface. Thermo optic devices formed with these resonators are also taught.

7. 发明申请

US20070069270A1 Top electrode in a strongly oxidizing environment 审中-公开
标题翻译：顶极电极处于强氧化环境
公开(公告)号：US20070069270A1
公开(公告)日：2007-03-29
申请号：US11398498
申请日：2006-04-04
申请人： Cem Basceri , Howard Rhodes , Gurtej Sandhu , F. Gealy , Thomas Graettinger
发明人： Cem Basceri , Howard Rhodes , Gurtej Sandhu , F. Gealy , Thomas Graettinger
IPC分类号： H01L29/94
CPC分类号： H01L28/65 , H01L21/31637 , H01L21/31691 , H01L23/5222 , H01L27/10852 , H01L28/56 , H01L28/60 , H01L2924/0002 , H01L2924/00
摘要： An improved charge storing device and methods for providing the same, the charge storing device comprising a conductor-insulator-conductor (CIC) sandwich. The CIC sandwich comprises a first conducting layer deposited on a semiconductor integrated circuit. The CIC sandwich further comprises a first insulating layer deposited over the first conducting layer in a flush manner. The first insulating layer comprises a structure having a plurality of oxygen cites and a plurality of oxygen atoms that partially fill the oxygen cites, wherein the unfilled oxygen cites define a concentration of oxygen vacancies. The CIC sandwich further comprises a second conducting layer deposited over the first insulating layer in a strongly oxidizing ambient so as to reduce the concentration of oxygen vacancies in the first insulating layer, so as to provide an oxygen-rich interface layer between the first insulating layer and the second conducting layer, and so as to trap a plurality of oxygen atoms within the second conducting layer. The oxygen-rich interface layer and second conducting layer act as oxygen vacancy sinks for absorbing migrating oxygen vacancies that originate from the first insulating layer to thereby reduce the concentration of oxygen vacancies in the first insulating layer and to thereby reduce the buildup of oxygen vacancies at the interface layer. Thus, the first insulating layer provides an increased dielectric constant and an increased resistance to current flowing therethrough so as to increase the capacitance of the CIC sandwich and so as to reduce leakage currents flowing through the CIC sandwich.
摘要翻译：一种改进的电荷存储装置及其提供方法，电荷存储装置包括导体 - 绝缘体导体（CIC）三明治。 CIC夹层包括沉积在半导体集成电路上的第一导电层。 CIC夹层还包括以齐平方式沉积在第一导电层上的第一绝缘层。第一绝缘层包括具有多个氧化物和部分填充氧化物的多个氧原子的结构，其中未填充的氧气定义氧空位的浓度。 CIC夹层还包括在强氧化环境中沉积在第一绝缘层上的第二导电层，以便降低第一绝缘层中氧空位的浓度，从而在第一绝缘层之间提供富氧界面层和第二导电层，以便在第二导电层内捕获多个氧原子。富氧界面层和第二导电层用作氧空位吸收器，用于吸收源于第一绝缘层的迁移氧空位，从而降低第一绝缘层中氧空位的浓度，从而减少氧空位的累积接口层。因此，第一绝缘层提供增加的介电常数和增加的电流流过其中，从而增加CIC夹层的电容，并且减少流过CIC夹层的漏电流。

8. 发明申请

US20050031284A1 Waveguide for thermo optic device 失效
标题翻译：波导用于光电装置
公开(公告)号：US20050031284A1
公开(公告)日：2005-02-10
申请号：US10929271
申请日：2004-08-30
申请人： Guy Blalock , Howard Rhodes , Vishnu Agarwal , Gurtej Sandhu , James Foresi , Jean-Francois Viens , Dale Fried
发明人： Guy Blalock , Howard Rhodes , Vishnu Agarwal , Gurtej Sandhu , James Foresi , Jean-Francois Viens , Dale Fried
IPC分类号： G02B6/12 , G02B6/125 , G02B6/136 , G02F1/01 , G02F1/025 , G02B6/10
CPC分类号： G02F1/025 , G02B6/125 , G02B6/136 , G02B2006/12107 , G02B2006/12164 , G02F1/0147 , G02F2203/15
摘要： A waveguide and resonator are formed on a lower cladding of a thermo optic device, each having a formation height that is substantially equal. Thereafter, the formation height of the waveguide is attenuated. In this manner, the aspect ratio as between the waveguide and resonator in an area where the waveguide and resonator front or face one another decreases (in comparison to the prior art) thereby restoring the synchronicity between the waveguide and the grating and allowing higher bandwidth configurations to be used. The waveguide attenuation is achieved by photomasking and etching the waveguide after the resonator and waveguide are formed. In one embodiment the photomasking and etching is performed after deposition of the upper cladding. In another, it is performed before the deposition. Thermo optic devices, thermo optic packages and fiber optic systems having these waveguides are also taught.
摘要翻译：波导和谐振器形成在热光器件的下包层上，每个具有基本相等的形成高度。此后，波导的形成高度被衰减。以这种方式，波导和谐振器在波导和谐振器前面或彼此面对的区域（与现有技术相比）中的波导和谐振器之间的纵横比，从而恢复波导和光栅之间的同步性并允许更高的带宽配置要使用的。在形成谐振器和波导之后，通过光掩模和蚀刻波导来实现波导衰减。在一个实施例中，在沉积上部包层之后进行光掩模和蚀刻。另一方面，它是在沉积之前进行的。还教导了具有这些波导的热光器件，热光封装和光纤系统。

9. 发明申请

US20070004199A1 Method of making a contact structure 有权
标题翻译：制作接触结构的方法
公开(公告)号：US20070004199A1
公开(公告)日：2007-01-04
申请号：US11514640
申请日：2006-09-01
申请人： Philip Ireland , Howard Rhodes
发明人： Philip Ireland , Howard Rhodes
IPC分类号： H01L21/4763 , H01L21/44 , H01L23/48
CPC分类号： H01L27/10888 , H01L21/76897 , H01L27/10811 , H01L2924/0002 , H01L2924/00
摘要： A method and structure are disclosed that are advantageous for aligning a contact plug within a bit line contact corridor (BLCC) to an active area of a DRAM that utilizes an insulated sleeve structure. A sleeve insulator layer is deposited in an opening to protect one or more conductor layers from conductive contacts formed in the opening. The sleeve insulator layer electrically insulates a conductive plug from the conductor layer and self-aligns the BLCC so as to improve contact plug alignment tolerances between the BLCC and the capacitor or conductive components.
摘要翻译：公开了一种有利于将位线接触走廊（BLCC）内的接触插塞对准利用绝缘套管结构的DRAM的有源区域的方法和结构。套管绝缘体层沉积在开口中以保护一个或多个导体层与形成在开口中的导电触头。套管绝缘体层将导电插塞与导体层电绝缘，并使BLCC自对准，以提高BLCC与电容器或导电部件之间的接触插塞对准公差。

10. 发明授权

US07750382B2 Image sensor having a charge storage region provided within an implant region 有权
标题翻译：具有设置在植入区域内的电荷存储区域的图像传感器
公开(公告)号：US07750382B2
公开(公告)日：2010-07-06
申请号：US12324083
申请日：2008-11-26
申请人： Howard Rhodes
发明人： Howard Rhodes
IPC分类号： H01L31/062
CPC分类号： H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035272
摘要： A deep implanted region of a first conductivity type located below a transistor array of a pixel sensor cell and adjacent a doped region of a second conductivity type of a photodiode of the pixel sensor cell is disclosed. The deep implanted region reduces surface leakage and dark current and increases the capacitance of the photodiode by acting as a reflective barrier to photo-generated charge in the doped region of the second conductivity type of the photodiode. The deep implanted region also provides improved charge transfer from the charge collection region of the photodiode to a floating diffusion region adjacent the gate of the transfer transistor.
摘要翻译：公开了一种位于像素传感器单元的晶体管阵列下方并且与像素传感器单元的第二导电类型的光电二极管的掺杂区相邻的第一导电类型的深度注入区域。深注入区域减小了表面泄漏和暗电流，并且通过在第二导电类型的光电二极管的掺杂区域中作为光生电荷的反射阻挡来增加光电二极管的电容。深注入区域还提供从光电二极管的电荷收集区域到与传输晶体管的栅极相邻的浮动扩散区域的改进的电荷转移。

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