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1. 发明授权

US07459392B2 Noble metal barrier and seed layer for semiconductors 有权
标题翻译：贵金属屏障和半导体种子层
公开(公告)号：US07459392B2
公开(公告)日：2008-12-02
申请号：US11096345
申请日：2005-03-31
申请人： Steven W. Johnston , Juan E. Dominguez , Michael L. McSwiney
发明人： Steven W. Johnston , Juan E. Dominguez , Michael L. McSwiney
IPC分类号： H01L21/768
CPC分类号： H01L21/76843 , H01L21/76846 , H01L21/7685 , H01L21/76871
摘要： A barrier and seed layer for a semiconductor damascene process is described. The seed layer is formed from a noble metal with an intermediate region between the barrier and noble metal layers to prevent oxidation of the barrier layer.
摘要翻译：描述了用于半导体镶嵌工艺的阻挡层和籽晶层。种子层由贵金属形成，在阻挡层和贵金属层之间具有中间区域，以防止阻挡层氧化。

2. 发明授权

US08227335B2 Forming a copper diffusion barrier 有权
标题翻译：形成铜扩散屏障
公开(公告)号：US08227335B2
公开(公告)日：2012-07-24
申请号：US11897862
申请日：2007-08-31
申请人： Steven W. Johnston , Valery M. Dubin , Michael L. McSwiney , Peter Moon
发明人： Steven W. Johnston , Valery M. Dubin , Michael L. McSwiney , Peter Moon
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/28562 , H01L21/288 , H01L21/76849 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Noble metal may be used as a non-oxidizing diffusion barrier to prevent diffusion from copper lines. A diffusion barrier may be formed of a noble metal formed over an adhesion promoting layer or by a noble metal cap over an oxidizable diffusion barrier. The copper lines may also be covered with a noble metal.
摘要翻译：贵金属可用作非氧化扩散阻挡层，以防止铜线扩散。扩散阻挡层可以由在可氧化扩散阻挡层上形成在粘附促进层上或由贵金属盖形成的贵金属形成。铜线也可以用贵金属覆盖。

3. 发明授权

US07279423B2 Forming a copper diffusion barrier 有权
标题翻译：形成铜扩散屏障
公开(公告)号：US07279423B2
公开(公告)日：2007-10-09
申请号：US10284576
申请日：2002-10-31
申请人： Steven W. Johnston , Valery M. Dubin , Michael L. McSwiney , Peter Moon
发明人： Steven W. Johnston , Valery M. Dubin , Michael L. McSwiney , Peter Moon
IPC分类号： H01L21/00
CPC分类号： H01L21/76843 , H01L21/28562 , H01L21/288 , H01L21/76849 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Noble metal may be used as a non-oxidizing diffusion barrier to prevent diffusion from copper lines. A diffusion barrier may be formed of a noble metal formed over an adhesion promoting layer or by a noble metal cap over an oxidizable diffusion barrier. The copper lines may also be covered with a noble metal.
摘要翻译：贵金属可用作非氧化扩散阻挡层，以防止铜线扩散。扩散阻挡层可以由在可氧化扩散阻挡层上形成在粘附促进层上或由贵金属盖形成的贵金属形成。铜线也可以用贵金属覆盖。

4. 发明申请

US20120091542A1 METHODS FOR THE DEPOSITION OF TERNARY OXIDE GATE DIELECTRICS AND STRUCTURES FORMED THEREBY 审中-公开
标题翻译：三氧化锗栅介质的沉积方法及其形成的结构
公开(公告)号：US20120091542A1
公开(公告)日：2012-04-19
申请号：US13330569
申请日：2011-12-19
申请人： Mark R. Brazier , Matthew V. Metz , Michael L. McSwiney , Markus Kuhn , Michael L. Hattendorf
发明人： Mark R. Brazier , Matthew V. Metz , Michael L. McSwiney , Markus Kuhn , Michael L. Hattendorf
IPC分类号： H01L29/78
CPC分类号： C23C16/45531 , C23C16/405 , H01L21/02178 , H01L21/02181 , H01L21/02183 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/022 , H01L21/0228 , H01L21/28194 , H01L21/3141 , H01L21/3142 , H01L21/31604 , H01L29/517 , Y10T428/24744
摘要： Methods and associated structures of forming a microelectronic device are described. Those methods may include introducing a first metal source, a second metal source and an oxygen source into a chamber and then forming a ternary oxide film comprising a first percentage of the first metal, a second percentage of the second metal, and a third percentage of oxygen.
摘要翻译：描述形成微电子器件的方法和相关结构。这些方法可以包括将第一金属源，第二金属源和氧源引入室中，然后形成包含第一金属的第一百分比，第二金属的第二百分比以及第二金属的第三百分比的三元氧化物膜氧。

5. 发明授权

US07704858B2 Methods of forming nickel silicide layers with low carbon content 失效
标题翻译：形成低碳含量的硅化镍层的方法
公开(公告)号：US07704858B2
公开(公告)日：2010-04-27
申请号：US11731275
申请日：2007-03-29
申请人： Michael L. McSwiney , Matthew V. Metz
发明人： Michael L. McSwiney , Matthew V. Metz
IPC分类号： H01L21/322 , H01L21/44
CPC分类号： C23C16/45534 , C23C16/18 , C23C16/45542 , H01L29/665 , H01L29/78
摘要： A method for forming a nickel silicide layer on a MOS device with a low carbon content comprises providing a substrate within an ALD reactor and performing an ALD process cycle to form a nickel layer on the substrate, wherein the ALD process cycle comprises pulsing a nickel precursor into the reactor, purging the reactor after the nickel precursor, pulsing a mixture of hydrogen and silane into the reactor, and purging the reactor after the hydrogen and silane pulse. The ALD process cycle can be repeated until the nickel layer reaches a desired thickness. The silane used in the ALD process functions as a getterer for the advantageous carbon, resulting in a nickel layer that has a low carbon content. The nickel layer may then be annealed to form a nickel silicide layer with a low carbon content.
摘要翻译：在具有低碳含量的MOS器件上形成硅化镍层的方法包括在ALD反应器内提供衬底并执行ALD工艺循环以在衬底上形成镍层，其中ALD工艺循环包括将镍前体进入反应器，在镍前体之后吹扫反应器，将氢和硅烷的混合物脉冲进入反应器，并在氢和硅烷脉冲之后清洗反应器。可以重复ALD工艺循环，直到镍层达到所需的厚度。用于ALD工艺中的硅烷作为有利碳的吸收剂起作用，产生具有低碳含量的镍层。然后镍层可以退火以形成具有低碳含量的硅化镍层。

6. 发明授权

US08003293B2 Pixelated photoresists 有权
标题翻译：像素化的光刻胶
公开(公告)号：US08003293B2
公开(公告)日：2011-08-23
申请号：US10956284
申请日：2004-09-30
申请人： Robert P. Meagley , Michael D. Goodner , Bob E. Leet , Michael L. McSwiney
发明人： Robert P. Meagley , Michael D. Goodner , Bob E. Leet , Michael L. McSwiney
IPC分类号： G03F7/00 , G03F7/004 , G03F7/029 , G03F7/26
CPC分类号： G03F7/0382 , G03F7/0392 , Y10S430/114 , Y10S430/115
摘要： A deliberately engineered placement and size constraint (molecular weight distribution) of photoacid generators, solubility switches, photoimageable species, and quenchers forms individual pixels within a photoresist. Upon irradiation, a self-contained reaction occurs within each of the individual pixels that were irradiated to pattern the photoresist. These pixels may take on a variety of forms including a polymer chain, a bulky cluster, a micelle, or a micelle formed of several polymer chains. Furthermore, these pixels may be designed to self-assemble onto the substrate on which the photoresist is applied.
摘要翻译：光致酸产生剂，溶解度开关，可光成象物质和猝灭剂的故意设计的放置和尺寸约束（分子量分布）在光致抗蚀剂内形成各个像素。在照射时，在被照射以对光致抗蚀剂进行图案化的各个像素内发生独立的反应。这些像素可以具有各种形式，包括由几个聚合物链形成的聚合物链，大体积聚集体，胶束或胶束。此外，这些像素可以被设计为自组装到其上施加光致抗蚀剂的基板上。

7. 发明申请

US20090096025A1 Method for manufacturing a silicon-on-insulator (SOI) wafer with an etch stop layer 审中-公开
标题翻译：用于制造具有蚀刻停止层的绝缘体上硅（SOI）晶片的方法
公开(公告)号：US20090096025A1
公开(公告)日：2009-04-16
申请号：US12316737
申请日：2008-12-15
申请人： Peter G. Tolchinsky , Martin D. Giles , Michael L. McSwiney , Mohamad Shaheen , Irwin Yablok
发明人： Peter G. Tolchinsky , Martin D. Giles , Michael L. McSwiney , Mohamad Shaheen , Irwin Yablok
IPC分类号： H01L27/00
CPC分类号： H01L21/26533 , H01L21/76243
摘要： Embodiments of a silicon-on-insulator (SOI) wafer having an etch stop layer overlying the buried oxide layer, as well as embodiments of a method of making the same, are disclosed. The etch stop layer may comprise silicon nitride, nitrogen-doped silicon dioxide, or silicon oxynitride, as well as some combination of these materials. Other embodiments are described and claimed.
摘要翻译：公开了具有覆盖掩埋氧化物层的蚀刻停止层的绝缘体上硅（SOI）晶片的实施例以及其制造方法的实施例。蚀刻停止层可以包括氮化硅，氮掺杂二氧化硅或氮氧化硅，以及这些材料的某些组合。描述和要求保护其他实施例。

8. 发明申请

US20090087623A1 METHODS FOR THE DEPOSITION OF TERNARY OXIDE GATE DIELECTRICS AND STRUCTURES FORMED THEREBY 审中-公开
标题翻译：三氧化锗栅介质的沉积方法及其形成的结构
公开(公告)号：US20090087623A1
公开(公告)日：2009-04-02
申请号：US11864831
申请日：2007-09-28
申请人： Mark R. Brazier , Matthew V. Metz , Michael L. McSwiney , Markus Kuhn , Michael L. Hattendorf
发明人： Mark R. Brazier , Matthew V. Metz , Michael L. McSwiney , Markus Kuhn , Michael L. Hattendorf
IPC分类号： B05D5/12 , C01B13/14 , C01F17/00 , B32B3/20 , B32B9/00
CPC分类号： C23C16/45531 , C23C16/405 , H01L21/02178 , H01L21/02181 , H01L21/02183 , H01L21/02186 , H01L21/02189 , H01L21/02192 , H01L21/02194 , H01L21/022 , H01L21/0228 , H01L21/28194 , H01L21/3141 , H01L21/3142 , H01L21/31604 , H01L29/517 , Y10T428/24744
摘要： Methods and associated structures of forming a microelectronic device are described. Those methods may include introducing a first metal source, a second metal source and an oxygen source into a chamber and then forming a ternary oxide film comprising a first percentage of the first metal, a second percentage of the second metal, and a third percentage of oxygen.
摘要翻译：描述形成微电子器件的方法和相关结构。这些方法可以包括将第一金属源，第二金属源和氧源引入室中，然后形成包含第一金属的第一百分比，第二金属的第二百分比以及第二金属的第三百分比的三元氧化物膜氧。

9. 发明申请

US20080242059A1 Methods of forming nickel silicide layers with low carbon content 失效
标题翻译：形成低碳含量的硅化镍层的方法
公开(公告)号：US20080242059A1
公开(公告)日：2008-10-02
申请号：US11731275
申请日：2007-03-29
申请人： Michael L. McSwiney , Matthew V. Metz
发明人： Michael L. McSwiney , Matthew V. Metz
IPC分类号： H01L21/322 , C23C16/06
CPC分类号： C23C16/45534 , C23C16/18 , C23C16/45542 , H01L29/665 , H01L29/78
摘要： A method for forming a nickel silicide layer on a MOS device with a low carbon content comprises providing a substrate within an ALD reactor and performing an ALD process cycle to form a nickel layer on the substrate, wherein the ALD process cycle comprises pulsing a nickel precursor into the reactor, purging the reactor after the nickel precursor, pulsing a mixture of hydrogen and silane into the reactor, and purging the reactor after the hydrogen and silane pulse. The ALD process cycle can be repeated until the nickel layer reaches a desired thickness. The silane used in the ALD process functions as a getterer for the advantageous carbon, resulting in a nickel layer that has a low carbon content. The nickel layer may then be annealed to form a nickel silicide layer with a low carbon content.
摘要翻译：在具有低碳含量的MOS器件上形成硅化镍层的方法包括在ALD反应器内提供衬底并执行ALD工艺循环以在衬底上形成镍层，其中ALD工艺循环包括将镍前体进入反应器，在镍前体之后吹扫反应器，将氢和硅烷的混合物脉冲进入反应器，并在氢和硅烷脉冲之后清洗反应器。可以重复ALD工艺循环，直到镍层达到所需的厚度。用于ALD工艺中的硅烷作为有利碳的吸收剂起作用，产生具有低碳含量的镍层。然后镍层可以退火以形成具有低碳含量的硅化镍层。

10. 发明授权

US07470450B2 Forming a silicon nitride film 有权
标题翻译：形成氮化硅膜
公开(公告)号：US07470450B2
公开(公告)日：2008-12-30
申请号：US10764193
申请日：2004-01-23
申请人： Michael L. McSwiney , Mansour Moinpour , Michael D. Goodner
发明人： Michael L. McSwiney , Mansour Moinpour , Michael D. Goodner
IPC分类号： C23C16/00
CPC分类号： C07F7/025 , C23C16/345 , H01L21/0217 , H01L21/02219 , H01L21/02222 , H01L21/02271 , H01L21/02274
摘要： A silicon nitride film may be deposited on a work piece using conventional deposition techniques and a selected source for use as a silicon precursor. A nitrogen precursor may also be selected for film deposition. Using the selected precursor(s), the temperature for deposition may be 500° C., or less.
摘要翻译：氮化硅膜可以使用常规沉积技术和所选择的源用作硅前体而沉积在工件上。也可以选择氮前体用于膜沉积。使用所选择的前体，沉积温度可以为500℃以下。

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