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1. 发明授权

US08319287B2 Tunable gate electrode work function material for transistor applications 有权
标题翻译：晶体管应用的可调栅电极功能材料
公开(公告)号：US08319287B2
公开(公告)日：2012-11-27
申请号：US12705248
申请日：2010-02-12
申请人： Adrien R. Lavoie , Valery M. Dubin , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Joseph H. Han , Mark Doczy
发明人： Adrien R. Lavoie , Valery M. Dubin , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Joseph H. Han , Mark Doczy
IPC分类号： H01L29/78
CPC分类号： H01L21/823842 , H01L29/4958 , H01L29/4966 , H01L29/7833
摘要： Described herein are metal gate electrode stacks including a low resistance metal cap in contact with a metal carbonitride diffusion barrier layer, wherein the metal carbonitride diffusion barrier layer is tuned to a particular work function to also serve as a work function metal for a pMOS transistor. In an embodiment, the work function-tuned metal carbonitride diffusion barrier prohibits a low resistance metal cap layer of the gate electrode stack from migrating into the MOS junction. In a further embodiment of the present invention, the work function of the metal carbonitride barrier film is modulated to be p-type with a pre-selected work function by altering a nitrogen concentration in the film.
摘要翻译：这里描述的金属栅极电极堆叠包括与金属碳氮化物扩散阻挡层接触的低电阻金属帽，其中金属碳氮化物扩散阻挡层被调谐到特定的功函数，以用作pMOS晶体管的功函数金属。在一个实施例中，工作功能调谐金属碳氮化物扩散屏障禁止栅电极堆叠的低电阻金属盖层迁移到MOS结。在本发明的另一个实施方案中，金属碳氮化物阻挡膜的功函数通过改变膜中的氮浓度而被调制为具有预选功函的p型。

2. 发明授权

US08222746B2 Noble metal barrier layers 有权
标题翻译：贵金属阻隔层
公开(公告)号：US08222746B2
公开(公告)日：2012-07-17
申请号：US11540386
申请日：2006-09-28
申请人： Adrien R. Lavoie , Juan E. Dominguez , Aaron A. Budrevich
发明人： Adrien R. Lavoie , Juan E. Dominguez , Aaron A. Budrevich
IPC分类号： H01L23/48
CPC分类号： C23C28/00 , C23C28/021 , C23C28/023 , C23C28/028 , C23C28/321 , C23C28/322 , C23C28/325 , C23C28/34 , C23C28/345
摘要： Noble metal barrier layers are disclosed. In one aspect, an apparatus may include a substrate, a dielectric layer over the substrate, and an interconnect structure within the dielectric layer. The interconnect structure may have a bulk metal and a barrier layer. The barrier layer may be disposed between the bulk metal and the dielectric layer. The barrier layer may include one or more metals selected from iridium, platinum, palladium, rhodium, osmium, gold, silver, rhenium, ruthenium, tungsten, and nickel.
摘要翻译：公开了贵金属阻挡层。在一个方面，一种装置可以包括衬底，在衬底上的电介质层，以及电介质层内的互连结构。互连结构可以具有体金属和阻挡层。阻挡层可以设置在本体金属和电介质层之间。阻挡层可以包括选自铱，铂，钯，铑，锇，金，银，铼，钌，钨和镍中的一种或多种金属。

3. 发明授权

US07982204B2 Using unstable nitrides to form semiconductor structures 有权
标题翻译：使用不稳定的氮化物形成半导体结构
公开(公告)号：US07982204B2
公开(公告)日：2011-07-19
申请号：US12788603
申请日：2010-05-27
申请人： Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Joseph H. Han , Harsono S. Simka
发明人： Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Joseph H. Han , Harsono S. Simka
IPC分类号： H01L29/06
CPC分类号： H01L23/53238 , H01L21/28556 , H01L21/28562 , H01L21/321 , H01L21/32139 , H01L21/76829 , H01L21/76867 , H01L21/76871 , H01L21/76886 , H01L2924/0002 , Y10S977/762 , H01L2924/00
摘要： Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to copper which could not have been as effectively adhered to the barrier in the first place.
摘要翻译：不相容的材料，例如铜和氮化阻挡层，可以更有效地彼此粘合。在一个实施方案中，铜的前体沉积在氮化屏障上。然后，通过施加能量将前体转化成铜，其首先不能被有效地粘附到屏障上。

4. 发明申请

US20100140717A1 TUNABLE GATE ELECTRODE WORK FUNCTION MATERIAL FOR TRANSISTOR APPLICATIONS 有权
标题翻译：用于晶体管应用的可控栅极电极功能材料
公开(公告)号：US20100140717A1
公开(公告)日：2010-06-10
申请号：US12705248
申请日：2010-02-12
申请人： Adrien R. Lavoie , Valery M. Dubin , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Joseph H. Han , Mark Doczy
发明人： Adrien R. Lavoie , Valery M. Dubin , John J. Plombon , Juan E. Dominguez , Harsono S. Simka , Joseph H. Han , Mark Doczy
IPC分类号： H01L27/092
CPC分类号： H01L21/823842 , H01L29/4958 , H01L29/4966 , H01L29/7833
摘要： Described herein are metal gate electrode stacks including a low resistance metal cap in contact with a metal carbonitride diffusion barrier layer, wherein the metal carbonitride diffusion barrier layer is tuned to a particular work function to also serve as a work function metal for a pMOS transistor. In an embodiment, the work function-tuned metal carbonitride diffusion barrier prohibits a low resistance metal cap layer of the gate electrode stack from migrating into the MOS junction. In a further embodiment of the present invention, the work function of the metal carbonitride barrier film is modulated to be p-type with a pre-selected work function by altering a nitrogen concentration in the film.
摘要翻译：这里描述的金属栅极电极堆叠包括与金属碳氮化物扩散阻挡层接触的低电阻金属帽，其中金属碳氮化物扩散阻挡层被调谐到特定的功函数，以用作pMOS晶体管的功函数金属。在一个实施例中，工作功能调谐金属碳氮化物扩散屏障禁止栅电极堆叠的低电阻金属盖层迁移到MOS结。在本发明的另一个实施方案中，金属碳氮化物阻挡膜的功函数通过改变膜中的氮浓度而被调制为具有预选功函的p型。

5. 发明授权

US07635503B2 Composite metal films and carbon nanotube fabrication 有权
标题翻译：复合金属薄膜和碳纳米管制作
公开(公告)号：US07635503B2
公开(公告)日：2009-12-22
申请号：US11359165
申请日：2006-02-21
申请人： Juan E. Dominguez , Valery M. Dubin , Florian Gstrein , Michael Goldstein
发明人： Juan E. Dominguez , Valery M. Dubin , Florian Gstrein , Michael Goldstein
IPC分类号： C23C16/00
CPC分类号： B82Y40/00 , B82Y30/00 , C01B32/162 , Y10S977/742
摘要： Embodiments of the present invention provide methods for the fabrication of carbon nanotubes using composite metal films. A composite metal film is fabricated to provide uniform catalytic sites to facilitate the uniform growth of carbon nanotubes. Further embodiments provide embedded nanoparticles for carbon nanotube fabrication. Embodiments of the invention are capable of maintaining the integrity of the catalytic sites at temperatures used in carbon nanotube fabrication processes, 600 to 1100° C.
摘要翻译：本发明的实施例提供了使用复合金属膜制造碳纳米管的方法。制造复合金属膜以提供均匀的催化位点以促进碳纳米管的均匀生长。另外的实施方案提供用于碳纳米管制造的嵌入式纳米颗粒。本发明的实施方案能够在碳纳米管制造工艺中使用的温度下维持催化部位的完整性，其温度为600至1100℃

6. 发明授权

US07625817B2 Method of fabricating a carbon nanotube interconnect structures 有权
标题翻译：制造碳纳米管互连结构的方法
公开(公告)号：US07625817B2
公开(公告)日：2009-12-01
申请号：US11325774
申请日：2005-12-30
申请人： Florian Gstrein , Valery M. Dubin , Juan E. Dominguez , Adrien R. Lavoie
发明人： Florian Gstrein , Valery M. Dubin , Juan E. Dominguez , Adrien R. Lavoie
IPC分类号： H01L21/4763
CPC分类号： H01L21/76877 , H01L21/76838 , H01L23/53276 , H01L2221/1094 , H01L2924/0002 , Y10S977/742 , Y10S977/75 , H01L2924/00
摘要： A method including forming an interconnect of single-walled carbon nanotubes on a sacrificial substrate; transferring the interconnect from the sacrificial substrate to a circuit substrate; and coupling the interconnect to a contact point on the circuit substrate. A method including forming a nanotube bundle on a circuit substrate between a first contact point and a second contact point, the nanotube defining a lumen therethrough; filling a portion of a length of the lumen of the nanotube bundle with an electrically conductive material; and coupling the electrically conductive material to the second contact point. A system including a computing device comprising a microprocessor, the microprocessor coupled to a printed circuit board, the microprocessor including a substrate having a plurality of circuit devices with electrical connections made to the plurality of circuit devices through interconnect structures including carbon nanotube bundles.
摘要翻译：一种包括在牺牲衬底上形成单层碳纳米管的互连的方法; 将所述互连件从所述牺牲衬底转移到电路衬底; 以及将所述互连件耦合到所述电路基板上的接触点。一种方法，包括在第一接触点和第二接触点之间的电路基板上形成纳米管束，所述纳米管限定通过其的腔; 用导电材料填充纳米管束管腔长度的一部分; 以及将所述导电材料耦合到所述第二接触点。一种包括计算设备的系统，包括微处理器，微处理器耦合到印刷电路板，微处理器包括具有多个电路器件的衬底，该电路器件具有通过包括碳纳米管束的互连结构与多个电路器件形成的电连接。

7. 发明授权

US07435679B2 Alloyed underlayer for microelectronic interconnects 有权
标题翻译：用于微电子互连的合金底层
公开(公告)号：US07435679B2
公开(公告)日：2008-10-14
申请号：US11006844
申请日：2004-12-07
申请人： Steven W. Johnston , Juan E. Dominguez
发明人： Steven W. Johnston , Juan E. Dominguez
IPC分类号： H01L21/44
CPC分类号： H01L21/76808 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76858 , H01L23/5226 , H01L23/53238 , H01L28/65 , H01L2924/0002 , H01L2924/00
摘要： Apparatus and methods of fabricating a microelectronic interconnect having an underlayer which acts as both a barrier layer and a seed layer. The underlayer is formed by co-depositing a noble metal and a barrier material, such as a refractory metal, or formed during thermal post-treatment, such as thermal annealing, conducted after two separately depositing the noble metal and the barrier material, which are substantially soluble in one another. The use of a barrier material within the underlayer prevents the electromigration of the interconnect conductive material and the use of noble material within the underlayer allows for the direct plating of the interconnect conductive material.
摘要翻译：制造具有作为阻挡层和种子层两者的底层的微电子互连的装置和方法。底层是通过共沉积贵金属和诸如难熔金属的阻挡材料形成的，或者在热后处理之后形成，例如热退火，在两个分开沉积贵金属和阻挡材料之后进行彼此基本溶解。在底层内使用阻挡材料防止互连导电材料的电迁移，并且在底层内使用贵金属允许互连导电材料的直接电镀。

8. 发明申请

US20080242880A1 COPPER PRECURSORS FOR CVD/ALD/DIGITAL CVD OF COPPER METAL FILMS 有权
标题翻译：铜金属膜CVD / ALD /数字CVD的铜前驱体
公开(公告)号：US20080242880A1
公开(公告)日：2008-10-02
申请号：US12058751
申请日：2008-03-30
申请人： Tianniu Chen , Chongying Xu , Thomas H. Baum , Bryan C. Hendrix , Jeffrey F. Roeder , Juan E. Dominguez , Adrien R. Lavoie , Harsono S. Simka
发明人： Tianniu Chen , Chongying Xu , Thomas H. Baum , Bryan C. Hendrix , Jeffrey F. Roeder , Juan E. Dominguez , Adrien R. Lavoie , Harsono S. Simka
IPC分类号： C07F1/08 , C09D5/00 , C23C16/54
CPC分类号： C07F17/00 , C23C16/45553
摘要： Copper precursors useful for depositing copper or copper-containing films on substrates, e.g., microelectronic device substrates or other surfaces. The precursors includes copper compounds of various classes, including copper borohydrides, copper compounds with cyclopentadienyl-type ligands, copper compounds with cyclopentadienyl-type and isocyanide ligands, and stabilized copper hydrides. The precursors can be utilized in solid or liquid forms that are volatilized to form precursor vapor for contacting with the substrate, to form deposited copper by techniques such as chemical vapor deposition (CVD), atomic layer deposition (ALD) or rapid vapor deposition (digital CVD).
摘要翻译：用于在基底上沉积铜或含铜膜的铜前体，例如微电子器件衬底或其它表面。前体包括各种类型的铜化合物，包括硼氢化铜，具有环戊二烯基型配体的铜化合物，具有环戊二烯基型的铜化合物和异氰化物配体，以及稳定的氢化铜。这些前体可以固体或液体形式使用，以便形成用于与基底接触的前体蒸气，通过诸如化学气相沉积（CVD），原子层沉积（ALD）或快速蒸镀（数字式）技术形成沉积的铜 CVD）。

9. 发明申请

US20080102632A1 Deposition process for iodine-doped ruthenium barrier layers 有权
标题翻译：碘掺杂钌屏障层的沉积工艺
公开(公告)号：US20080102632A1
公开(公告)日：2008-05-01
申请号：US11591792
申请日：2006-11-01
申请人： Joseph H. Han , Harsono S. Simka , Adrien R. Lavoie , Juan E. Dominguez , John J. Plombon
发明人： Joseph H. Han , Harsono S. Simka , Adrien R. Lavoie , Juan E. Dominguez , John J. Plombon
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/18 , C23C16/45529 , C23C18/08 , C23C18/1216 , C23C18/1295 , C23C18/1605 , C23C18/165 , C23C18/1889 , C25D5/02 , C25D7/123 , H01L21/28556 , H01L21/28562 , H01L21/76846 , H01L21/76873
摘要： An iodine-doped ruthenium barrier layer for use with copper interconnects within integrated circuits is formed using novel, iodine-containing ruthenium precursors in an ALD or CVD process. Ruthenium precursors that may be used include ruthenium containing carbonyls, arenes, cyclopentadienyls, and certain other ruthenium containing compounds. The ruthenium precursors include iodine to catalyze a subsequent copper metal deposition and to smooth the surface of the ruthenium layer. The iodine concentration across the thickness of the ruthenium barrier layer may be constant or may be graded.
摘要翻译：在ALD或CVD工艺中使用新颖的含碘钌前体形成在集成电路内与铜互连一起使用的掺碘钌阻挡层。可以使用的钌前体包括含钌的羰基，芳烃，环戊二烯基和某些其它含钌化合物。钌前体包括碘以催化随后的铜金属沉积并平滑钌层的表面。钌阻挡层的厚度上的碘浓度可以是恒定的或可以分级的。

10. 发明授权

US08344352B2 Using unstable nitrides to form semiconductor structures 有权
标题翻译：使用不稳定的氮化物形成半导体结构
公开(公告)号：US08344352B2
公开(公告)日：2013-01-01
申请号：US13185094
申请日：2011-07-18
申请人： Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Joseph H. Han , Harsono S. Simka
发明人： Juan E. Dominguez , Adrien R. Lavoie , John J. Plombon , Joseph H. Han , Harsono S. Simka
IPC分类号： H01L29/06
CPC分类号： H01L23/53238 , H01L21/28556 , H01L21/28562 , H01L21/321 , H01L21/32139 , H01L21/76829 , H01L21/76867 , H01L21/76871 , H01L21/76886 , H01L2924/0002 , Y10S977/762 , H01L2924/00
摘要： Incompatible materials, such as copper and nitrided barrier layers, may be adhered more effectively to one another. In one embodiment, a precursor of copper is deposited on the nitrided barrier. The precursor is then converted, through the application of energy, to copper which could not have been as effectively adhered to the barrier in the first place.
摘要翻译：不相容的材料，例如铜和氮化阻挡层，可以更有效地彼此粘合。在一个实施方案中，铜的前体沉积在氮化屏障上。然后，通过施加能量将前体转化成铜，其首先不能被有效地粘附到屏障上。

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