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1. 发明授权

US06709565B2 Method and apparatus for uniform electropolishing of damascene ic structures by selective agitation 有权
标题翻译：通过选择性搅拌均匀电解抛光镶嵌结构的方法和装置
公开(公告)号：US06709565B2
公开(公告)日：2004-03-23
申请号：US09967075
申请日：2001-09-28
申请人： Steven T. Mayer , Robert J. Contolini , Eliot K. Broadbent , John S. Drewery
发明人： Steven T. Mayer , Robert J. Contolini , Eliot K. Broadbent , John S. Drewery
IPC分类号： B23H1100
CPC分类号： B23H5/08 , H01L21/32115 , H01L21/3212 , H01L21/32134
摘要： The present invention pertains to apparatus and methods for planarization of metal surfaces having both recessed and raised features, over a large range of feature sizes. The invention accomplishes this by increasing the fluid agitation in raised regions with respect to recessed regions. That is, the agitation of the electropolishing bath fluid is agitated or exchanged as a function of elevation on the metal film profile. The higher the elevation, the greater the movement or exchange rate of bath fluid. In preferred methods of the invention, this agitation is achieved through the use of a microporous electropolishing pad that moves over (either near or in contact with) the surface of the wafer during the electropolishing process. Thus, methods of the invention are electropolishing methods, which in some cases include mechanical polishing elements.
摘要翻译：本发明涉及在大范围的特征尺寸上具有凹陷和凸起特征的金属表面的平坦化的装置和方法。本发明通过增加相对于凹陷区域的凸起区域中的流体搅拌来实现。也就是说，作为金属膜轮廓上的仰角的函数来搅动或更换电抛光浴液的搅动。海拔越高，浴液的运动或汇率越高。在本发明的优选方法中，通过使用在电解抛光过程中在晶片表面上移动（接近或接触）的微孔电解抛光垫来实现该搅拌。因此，本发明的方法是电抛光方法，其在一些情况下包括机械抛光元件。

2. 发明授权

US07682498B1 Rotationally asymmetric variable electrode correction 有权
标题翻译：旋转不对称可变电极校正
公开(公告)号：US07682498B1
公开(公告)日：2010-03-23
申请号：US11179984
申请日：2005-07-11
申请人： Steven T. Mayer , John S. Drewery
发明人： Steven T. Mayer , John S. Drewery
IPC分类号： B23H3/00 , C25D5/00 , C25D5/18 , C25D17/10 , B23H7/14 , C25D21/12
CPC分类号： B23H3/04 , C25D5/04 , C25D5/18 , C25D7/123 , C25D17/001 , C25D17/12 , C25D21/12
摘要： A work piece is electroplated or electroplanarized using an azimuthally asymmetric electrode. The azimuthally asymmetric electrode is rotated with respect to the work piece (i.e., either or both of the work piece and the electrode may be rotating). The azimuthal asymmetry provides a time-of-exposure correction to the current distribution reaching the work piece. In some embodiments, the total current is distributed among a plurality of electrodes in a reaction cell in order to tailor the current distribution in the electrolyte over time. Focusing elements may be used to create “virtual electrode” in proximity to the surface of the work piece to further control the current distribution in the electrolyte during plating or planarization.
摘要翻译：使用方位不对称电极对工件进行电镀或电平面化处理。方位不对称电极相对于工件旋转（即，工件和电极中的任一个或两者可以旋转）。方位不对称性提供了到达工件的当前分布的曝光时间校正。在一些实施例中，总电流分布在反应池中的多个电极之间，以便随着时间的推移来调整电解质中的电流分布。可以使用聚焦元件在工件的表面附近产生“虚拟电极”，以进一步控制在电镀或平坦化期间电解液中的电流分布。

3. 发明授权

US07449098B1 Method for planar electroplating 失效
标题翻译：平面电镀方法
公开(公告)号：US07449098B1
公开(公告)日：2008-11-11
申请号：US10739822
申请日：2003-12-17
申请人： Steven T. Mayer , Jonathan D. Reid , Mark L. Rea , Ismail T. Emesh , Henner W. Meinhold , John S. Drewery
发明人： Steven T. Mayer , Jonathan D. Reid , Mark L. Rea , Ismail T. Emesh , Henner W. Meinhold , John S. Drewery
IPC分类号： C25D5/02 , C25D5/34 , C25D5/48 , C25D7/12
CPC分类号： B23H5/08 , C25D5/06 , C25D5/22 , C25D5/34 , C25D5/48 , C25D7/123 , C25F3/16 , H01L21/2885 , H01L21/3212 , H01L21/7684 , H01L21/76877
摘要： A disclosed form of mechanically assisted electroplating leads to a flat, thin, overburden. In one example, an accelerator is deposited on a copper surface and mechanically removed in a simplified CMP-like apparatus. The wafer is then plated in an electrolyte containing little or no accelerating additives.
摘要翻译：一种公开的机械辅助电镀形式导致平坦，薄的覆盖层。在一个实例中，加速器沉积在铜表面上并在简化的类似CMP的装置中机械地去除。然后将晶片镀在含有很少或没有加速添加剂的电解质中。

4. 发明授权

US07531079B1 Method and apparatus for uniform electropolishing of damascene IC structures by selective agitation 失效
标题翻译：通过选择性搅拌均匀电解抛光镶嵌IC结构的方法和装置
公开(公告)号：US07531079B1
公开(公告)日：2009-05-12
申请号：US11065708
申请日：2005-02-23
申请人： Steven T. Mayer , John S. Drewery
发明人： Steven T. Mayer , John S. Drewery
IPC分类号： C25F3/16
CPC分类号： B23H5/08 , C25F3/16 , H01L21/32125 , H01L21/7684
摘要： The present invention pertains to apparatus and methods for planarization of metal surfaces having both recessed and raised features, over a large range of feature sizes. The invention accomplishes this by increasing the fluid agitation in raised regions with respect to recessed regions. That is, the agitation of the electropolishing bath fluid is agitated or exchanged as a function of elevation on the metal film profile. The higher the elevation, the greater the movement or exchange rate of bath fluid. In preferred methods of the invention, this agitation is achieved through the use of a microporous electropolishing pad that moves over (either near or in contact with) the surface of the wafer during the electropolishing process. Thus, methods of the invention are electropolishing methods, which in some cases include mechanical polishing elements.
摘要翻译：本发明涉及在大范围的特征尺寸上具有凹陷和凸起特征的金属表面的平坦化的装置和方法。本发明通过增加相对于凹陷区域的凸起区域中的流体搅拌来实现。也就是说，作为金属膜轮廓上的仰角的函数来搅动或更换电抛光浴液的搅动。海拔越高，浴液的运动或汇率越高。在本发明的优选方法中，通过使用在电解抛光过程中在晶片表面上移动（接近或接触）的微孔电解抛光垫来实现该搅拌。因此，本发明的方法是电抛光方法，其在一些情况下包括机械抛光元件。

5. 发明授权

US5486234A Removal of field and embedded metal by spin spray etching 失效
标题翻译：通过旋转喷涂蚀刻去除场和嵌入金属
公开(公告)号：US5486234A
公开(公告)日：1996-01-23
申请号：US375054
申请日：1995-01-19
申请人： Robert J. Contolini , Steven T. Mayer , Lisa A. Tarte
发明人： Robert J. Contolini , Steven T. Mayer , Lisa A. Tarte
IPC分类号： H01L21/3213 , H01L21/768 , H01L21/00
CPC分类号： H01L21/76838 , H01L21/32134
摘要： A process of removing both the field metal, such as copper, and a metal, such as copper, embedded into a dielectric or substrate at substantially the same rate by dripping or spraying a suitable metal etchant onto a spinning wafer to etch the metal evenly on the entire surface of the wafer. By this process the field metal is etched away completely while etching of the metal inside patterned features in the dielectric at the same or a lesser rate. This process is dependent on the type of chemical etchant used, the concentration and the temperature of the solution, and also the rate of spin speed of the wafer during the etching. The process substantially reduces the metal removal time compared to mechanical polishing, for example, and can be carried out using significantly less expensive equipment.
摘要翻译：通过将合适的金属蚀刻剂滴落或喷涂到旋转的晶片上以均匀地蚀刻金属，以基本上相同的速率将现场金属（例如铜）和金属（例如铜）两者嵌入电介质或基底中的步骤晶片的整个表面。通过该处理，在以相同或较小的速率蚀刻电介质中的图案化特征内的金属的同时蚀刻完全场地金属。该过程取决于所使用的化学蚀刻剂的类型，溶液的浓度和温度，以及蚀刻期间晶片的旋转速度。例如，与机械抛光相比，该方法显着降低了金属去除时间，并且可以使用显着更便宜的设备进行。

6. 发明授权

US07070686B2 Dynamically variable field shaping element 有权
公开(公告)号：US07070686B2
公开(公告)日：2006-07-04
申请号：US10274755
申请日：2002-10-21
申请人： Robert J. Contolini , Andrew J. McCutcheon , Steven T. Mayer
发明人： Robert J. Contolini , Andrew J. McCutcheon , Steven T. Mayer
IPC分类号： C25D5/00 , C25D17/00
CPC分类号： C25D5/006 , C25D7/123 , C25D17/001 , C25D17/008 , C25D17/06
摘要： In an electrochemical reactor used for electrochemical treatment of a substrate, for example, for electroplating or electropolishing the substrate, one or more of the surface area of a field-shaping shield, the shield's distance between the anode and cathode, and the shield's angular orientation is varied during electrochemical treatment to screen the applied field and to compensate for potential drop along the radius of a wafer. The shield establishes an inverse potential drop in the electrolytic fluid to overcome the resistance of a thin film of conductive metal on the wafer.

7. 发明授权

US06315883B1 Electroplanarization of large and small damascene features using diffusion barriers and electropolishing 有权
标题翻译：使用扩散屏障和电解抛光的大型和小型镶嵌特征的电平面化
公开(公告)号：US06315883B1
公开(公告)日：2001-11-13
申请号：US09412837
申请日：1999-10-05
申请人： Steven T. Mayer , Robert J. Contolini
发明人： Steven T. Mayer , Robert J. Contolini
IPC分类号： C25D502
CPC分类号： H01L21/32115 , B23H5/08 , H01L21/3212 , H01L21/32134
摘要： A disclosed electroplanarization process involves “masking” certain regions of a wafer surface during electropolishing. The regions chosen for masking are features of relatively low aspect ratio (i.e., features that are wider than they are deep). The masking is accomplished with a material of relatively low ionic conductivity, which effectively slows or blocks transport of the metal ions produced during electropolishing. Examples of masking materials include concentrated phosphoric acid and certain polymers.
摘要翻译：所公开的电平面化方法涉及在电解抛光期间“掩蔽”晶片表面的某些区域。选择用于掩蔽的区域是相对低的纵横比的特征（即，比它们更深的特征）。掩蔽是用离子电导率相对较低的材料完成的，这有效地减慢或阻止了电解抛光过程中产生的金属离子的传输。掩蔽材料的实例包括浓磷酸和某些聚合物。

8. 发明授权

US5096550A Method and apparatus for spatially uniform electropolishing and electrolytic etching 失效
标题翻译：用于空间均匀电解和电解蚀刻的方法和装置
公开(公告)号：US5096550A
公开(公告)日：1992-03-17
申请号：US597225
申请日：1990-10-15
申请人： Steven T. Mayer , Robert J. Contolini , Anthony F. Bernhardt
发明人： Steven T. Mayer , Robert J. Contolini , Anthony F. Bernhardt
IPC分类号： C25F3/02 , C25F3/16 , C25F7/00
CPC分类号： C25F7/00 , C25F3/02 , C25F3/16 , Y10S204/07
摘要： In an electropolishing or electrolytic etching apparatus the anode is separated from the cathode to prevent bubble transport to the anode and to produce a uniform current distribution at the anode by means of a solid nonconducting anode-cathode barrier. The anode extends into the top of the barrier and the cathode is outside the barrier. A virtual cathode hole formed in the bottom of the barrier below the level of the cathode permits current flow while preventing bubble transport. The anode is rotatable and oriented horizontally facing down. An extended anode is formed by mounting the workpiece in a holder which extends the electropolishing or etching area beyond the edge of the workpiece to reduce edge effects at the workpiece. A reference electrode controls cell voltage. Endpoint detection and current shut-off stop polishing. Spatially uniform polishing or etching can be rapidly performed.
摘要翻译：在电解抛光或电解蚀刻装置中，阳极与阴极分离，以防止气泡传输到阳极，并通过固体非导电阳极 - 阴极屏障在阳极处产生均匀的电流分布。阳极延伸到屏障的顶部，阴极在屏障外。形成在阴极底部的阴极底部的虚拟阴极孔允许电流流动，同时防止气泡输送。阳极可旋转并水平定向朝下。扩展阳极通过将工件安装在将电解抛光或蚀刻区域延伸超过工件边缘的保持器中形成，以减少工件的边缘效应。参考电极控制电池电压。端点检测和电流切断停止抛光。可以快速进行空间均匀的抛光或蚀刻。

9. 发明授权

US08795482B1 Selective electrochemical accelerator removal 有权
标题翻译：选择性电化学促进剂去除
公开(公告)号：US08795482B1
公开(公告)日：2014-08-05
申请号：US13572483
申请日：2012-08-10
申请人： Steven T. Mayer , Marshall R. Stowell , John S. Drewery , Richard S. Hill , Timothy M. Archer , Avishai Kepten
发明人： Steven T. Mayer , Marshall R. Stowell , John S. Drewery , Richard S. Hill , Timothy M. Archer , Avishai Kepten
IPC分类号： C25D5/02 , C25F3/16
CPC分类号： B23H5/08 , C25F3/16 , H01L21/02068 , H01L21/2885 , H01L21/32115 , H01L21/7684
摘要： Methods and apparatus are provided for planar metal plating on a workpiece having a surface with recessed regions and exposed surface regions; comprising the steps of: causing a plating accelerator to become attached to said surface including the recessed and exposed surface regions; selectively removing the plating accelerator from the exposed surface regions without performing substantial metal plating on the surface; and after removal of plating accelerator is at least partially complete, plating metal onto the surface, whereby the plating accelerator remaining attached to the surface increases the rate of metal plating in the recessed regions relative to the rate of metal plating in the exposed surface regions.
摘要翻译：提供了用于在具有凹陷区域和暴露表面区域的表面的工件上进行平面金属电镀的方法和装置; 包括以下步骤：使电镀加速器附着到包括凹入和暴露的表面区域的所述表面; 选择性地从暴露的表面区域去除电镀加速器，而不在表面上进行实质的金属电镀; 在去除电镀促进剂至少部分完成后，将金属镀在表面上，由此保持附着在表面上的电镀加速剂相对于露出的表面区域中的金属电镀速率增加凹陷区域中的金属电镀速率。

10. 发明授权

US08268154B1 Selective electrochemical accelerator removal 有权
标题翻译：选择性电化学促进剂去除
公开(公告)号：US08268154B1
公开(公告)日：2012-09-18
申请号：US12860787
申请日：2010-08-20
申请人： Steven T. Mayer , John S. Drewery , Richard S. Hill , Timothy M. Archer , Avishai Kepten
发明人： Steven T. Mayer , John S. Drewery , Richard S. Hill , Timothy M. Archer , Avishai Kepten
IPC分类号： C25D5/02
CPC分类号： B23H5/08 , C25F3/16 , H01L21/02068 , H01L21/2885 , H01L21/32115 , H01L21/7684
摘要： Methods and apparatus are provided for planar metal plating on a workpiece having a surface with recessed regions and exposed surface regions; comprising the steps of: causing a plating accelerator to become attached to said surface including the recessed and exposed surface regions; selectively removing the plating accelerator from the exposed surface regions without performing substantial metal plating on the surface; and after removal of plating accelerator is at least partially complete, plating metal onto the surface, whereby the plating accelerator remaining attached to the surface increases the rate of metal plating in the recessed regions relative to the rate of metal plating in the exposed surface regions.
摘要翻译：提供了用于在具有凹陷区域和暴露表面区域的表面的工件上进行平面金属电镀的方法和装置; 包括以下步骤：使电镀加速器附着到包括凹入和暴露的表面区域的所述表面; 选择性地从暴露的表面区域去除电镀加速器，而不在表面上进行实质的金属电镀; 在去除电镀促进剂至少部分完成后，将金属镀在表面上，由此保持附着在表面上的电镀加速剂相对于露出的表面区域中的金属电镀速率增加凹陷区域中的金属电镀速率。

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