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1. 发明授权

US07449098B1 Method for planar electroplating 失效
标题翻译：平面电镀方法
公开(公告)号：US07449098B1
公开(公告)日：2008-11-11
申请号：US10739822
申请日：2003-12-17
申请人： Steven T. Mayer , Jonathan D. Reid , Mark L. Rea , Ismail T. Emesh , Henner W. Meinhold , John S. Drewery
发明人： Steven T. Mayer , Jonathan D. Reid , Mark L. Rea , Ismail T. Emesh , Henner W. Meinhold , John S. Drewery
IPC分类号： C25D5/02 , C25D5/34 , C25D5/48 , C25D7/12
CPC分类号： B23H5/08 , C25D5/06 , C25D5/22 , C25D5/34 , C25D5/48 , C25D7/123 , C25F3/16 , H01L21/2885 , H01L21/3212 , H01L21/7684 , H01L21/76877
摘要： A disclosed form of mechanically assisted electroplating leads to a flat, thin, overburden. In one example, an accelerator is deposited on a copper surface and mechanically removed in a simplified CMP-like apparatus. The wafer is then plated in an electrolyte containing little or no accelerating additives.
摘要翻译：一种公开的机械辅助电镀形式导致平坦，薄的覆盖层。在一个实例中，加速器沉积在铜表面上并在简化的类似CMP的装置中机械地去除。然后将晶片镀在含有很少或没有加速添加剂的电解质中。

2. 发明授权

US07682498B1 Rotationally asymmetric variable electrode correction 有权
标题翻译：旋转不对称可变电极校正
公开(公告)号：US07682498B1
公开(公告)日：2010-03-23
申请号：US11179984
申请日：2005-07-11
申请人： Steven T. Mayer , John S. Drewery
发明人： Steven T. Mayer , John S. Drewery
IPC分类号： B23H3/00 , C25D5/00 , C25D5/18 , C25D17/10 , B23H7/14 , C25D21/12
CPC分类号： B23H3/04 , C25D5/04 , C25D5/18 , C25D7/123 , C25D17/001 , C25D17/12 , C25D21/12
摘要： A work piece is electroplated or electroplanarized using an azimuthally asymmetric electrode. The azimuthally asymmetric electrode is rotated with respect to the work piece (i.e., either or both of the work piece and the electrode may be rotating). The azimuthal asymmetry provides a time-of-exposure correction to the current distribution reaching the work piece. In some embodiments, the total current is distributed among a plurality of electrodes in a reaction cell in order to tailor the current distribution in the electrolyte over time. Focusing elements may be used to create “virtual electrode” in proximity to the surface of the work piece to further control the current distribution in the electrolyte during plating or planarization.
摘要翻译：使用方位不对称电极对工件进行电镀或电平面化处理。方位不对称电极相对于工件旋转（即，工件和电极中的任一个或两者可以旋转）。方位不对称性提供了到达工件的当前分布的曝光时间校正。在一些实施例中，总电流分布在反应池中的多个电极之间，以便随着时间的推移来调整电解质中的电流分布。可以使用聚焦元件在工件的表面附近产生“虚拟电极”，以进一步控制在电镀或平坦化期间电解液中的电流分布。

3. 发明授权

US07531079B1 Method and apparatus for uniform electropolishing of damascene IC structures by selective agitation 失效
标题翻译：通过选择性搅拌均匀电解抛光镶嵌IC结构的方法和装置
公开(公告)号：US07531079B1
公开(公告)日：2009-05-12
申请号：US11065708
申请日：2005-02-23
申请人： Steven T. Mayer , John S. Drewery
发明人： Steven T. Mayer , John S. Drewery
IPC分类号： C25F3/16
CPC分类号： B23H5/08 , C25F3/16 , H01L21/32125 , H01L21/7684
摘要： The present invention pertains to apparatus and methods for planarization of metal surfaces having both recessed and raised features, over a large range of feature sizes. The invention accomplishes this by increasing the fluid agitation in raised regions with respect to recessed regions. That is, the agitation of the electropolishing bath fluid is agitated or exchanged as a function of elevation on the metal film profile. The higher the elevation, the greater the movement or exchange rate of bath fluid. In preferred methods of the invention, this agitation is achieved through the use of a microporous electropolishing pad that moves over (either near or in contact with) the surface of the wafer during the electropolishing process. Thus, methods of the invention are electropolishing methods, which in some cases include mechanical polishing elements.
摘要翻译：本发明涉及在大范围的特征尺寸上具有凹陷和凸起特征的金属表面的平坦化的装置和方法。本发明通过增加相对于凹陷区域的凸起区域中的流体搅拌来实现。也就是说，作为金属膜轮廓上的仰角的函数来搅动或更换电抛光浴液的搅动。海拔越高，浴液的运动或汇率越高。在本发明的优选方法中，通过使用在电解抛光过程中在晶片表面上移动（接近或接触）的微孔电解抛光垫来实现该搅拌。因此，本发明的方法是电抛光方法，其在一些情况下包括机械抛光元件。

4. 发明授权

US06709565B2 Method and apparatus for uniform electropolishing of damascene ic structures by selective agitation 有权
标题翻译：通过选择性搅拌均匀电解抛光镶嵌结构的方法和装置
公开(公告)号：US06709565B2
公开(公告)日：2004-03-23
申请号：US09967075
申请日：2001-09-28
申请人： Steven T. Mayer , Robert J. Contolini , Eliot K. Broadbent , John S. Drewery
发明人： Steven T. Mayer , Robert J. Contolini , Eliot K. Broadbent , John S. Drewery
IPC分类号： B23H1100
CPC分类号： B23H5/08 , H01L21/32115 , H01L21/3212 , H01L21/32134
摘要： The present invention pertains to apparatus and methods for planarization of metal surfaces having both recessed and raised features, over a large range of feature sizes. The invention accomplishes this by increasing the fluid agitation in raised regions with respect to recessed regions. That is, the agitation of the electropolishing bath fluid is agitated or exchanged as a function of elevation on the metal film profile. The higher the elevation, the greater the movement or exchange rate of bath fluid. In preferred methods of the invention, this agitation is achieved through the use of a microporous electropolishing pad that moves over (either near or in contact with) the surface of the wafer during the electropolishing process. Thus, methods of the invention are electropolishing methods, which in some cases include mechanical polishing elements.
摘要翻译：本发明涉及在大范围的特征尺寸上具有凹陷和凸起特征的金属表面的平坦化的装置和方法。本发明通过增加相对于凹陷区域的凸起区域中的流体搅拌来实现。也就是说，作为金属膜轮廓上的仰角的函数来搅动或更换电抛光浴液的搅动。海拔越高，浴液的运动或汇率越高。在本发明的优选方法中，通过使用在电解抛光过程中在晶片表面上移动（接近或接触）的微孔电解抛光垫来实现该搅拌。因此，本发明的方法是电抛光方法，其在一些情况下包括机械抛光元件。

5. 发明授权

US08795482B1 Selective electrochemical accelerator removal 有权
标题翻译：选择性电化学促进剂去除
公开(公告)号：US08795482B1
公开(公告)日：2014-08-05
申请号：US13572483
申请日：2012-08-10
申请人： Steven T. Mayer , Marshall R. Stowell , John S. Drewery , Richard S. Hill , Timothy M. Archer , Avishai Kepten
发明人： Steven T. Mayer , Marshall R. Stowell , John S. Drewery , Richard S. Hill , Timothy M. Archer , Avishai Kepten
IPC分类号： C25D5/02 , C25F3/16
CPC分类号： B23H5/08 , C25F3/16 , H01L21/02068 , H01L21/2885 , H01L21/32115 , H01L21/7684
摘要： Methods and apparatus are provided for planar metal plating on a workpiece having a surface with recessed regions and exposed surface regions; comprising the steps of: causing a plating accelerator to become attached to said surface including the recessed and exposed surface regions; selectively removing the plating accelerator from the exposed surface regions without performing substantial metal plating on the surface; and after removal of plating accelerator is at least partially complete, plating metal onto the surface, whereby the plating accelerator remaining attached to the surface increases the rate of metal plating in the recessed regions relative to the rate of metal plating in the exposed surface regions.
摘要翻译：提供了用于在具有凹陷区域和暴露表面区域的表面的工件上进行平面金属电镀的方法和装置; 包括以下步骤：使电镀加速器附着到包括凹入和暴露的表面区域的所述表面; 选择性地从暴露的表面区域去除电镀加速器，而不在表面上进行实质的金属电镀; 在去除电镀促进剂至少部分完成后，将金属镀在表面上，由此保持附着在表面上的电镀加速剂相对于露出的表面区域中的金属电镀速率增加凹陷区域中的金属电镀速率。

6. 发明授权

US08268154B1 Selective electrochemical accelerator removal 有权
标题翻译：选择性电化学促进剂去除
公开(公告)号：US08268154B1
公开(公告)日：2012-09-18
申请号：US12860787
申请日：2010-08-20
申请人： Steven T. Mayer , John S. Drewery , Richard S. Hill , Timothy M. Archer , Avishai Kepten
发明人： Steven T. Mayer , John S. Drewery , Richard S. Hill , Timothy M. Archer , Avishai Kepten
IPC分类号： C25D5/02
CPC分类号： B23H5/08 , C25F3/16 , H01L21/02068 , H01L21/2885 , H01L21/32115 , H01L21/7684
摘要： Methods and apparatus are provided for planar metal plating on a workpiece having a surface with recessed regions and exposed surface regions; comprising the steps of: causing a plating accelerator to become attached to said surface including the recessed and exposed surface regions; selectively removing the plating accelerator from the exposed surface regions without performing substantial metal plating on the surface; and after removal of plating accelerator is at least partially complete, plating metal onto the surface, whereby the plating accelerator remaining attached to the surface increases the rate of metal plating in the recessed regions relative to the rate of metal plating in the exposed surface regions.
摘要翻译：提供了用于在具有凹陷区域和暴露表面区域的表面的工件上进行平面金属电镀的方法和装置; 包括以下步骤：使电镀加速器附着到包括凹入和暴露的表面区域的所述表面; 选择性地从暴露的表面区域去除电镀加速器，而不在表面上进行实质的金属电镀; 在去除电镀促进剂至少部分完成后，将金属镀在表面上，由此保持附着在表面上的电镀加速剂相对于露出的表面区域中的金属电镀速率增加凹陷区域中的金属电镀速率。

7. 发明授权

US08158532B2 Topography reduction and control by selective accelerator removal 有权
标题翻译：通过选择性促进剂去除的地形减少和控制
公开(公告)号：US08158532B2
公开(公告)日：2012-04-17
申请号：US11602128
申请日：2006-11-20
申请人： Steven T. Mayer , Mark L. Rea , Richard S. Hill , Avishai Kepten , R. Marshall Stowell , Eric G. Webb
发明人： Steven T. Mayer , Mark L. Rea , Richard S. Hill , Avishai Kepten , R. Marshall Stowell , Eric G. Webb
IPC分类号： H01L21/302
CPC分类号： C25D17/14 , B23H5/08 , C25D5/02 , C25D5/06 , C25D5/08 , C25D5/34 , C25D7/123 , C25D17/001 , C25D17/06 , C25F3/16 , C25F3/30 , H01L21/02068 , H01L21/2885 , H01L21/32115 , H01L21/3212 , H01L21/32134 , H01L21/7684 , H01L21/76849 , H01L21/76877
摘要： Plating accelerator is applied selectively to a substantially-unfilled wide (e.g., low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill the wide feature cavity and to form an embossed structure in which the height of a wide-feature metal protrusion over the metal-filled wide-feature cavity is higher than the height of metal over field regions. Most of the overburden metal is removed using non-contact techniques, such as chemical wet etching. Metal above the wide feature cavity protects the metal-filled wide-feature interconnect against dishing, and improved planarization techniques avoid erosion of the metal interconnect and dielectric insulating layer. In some embodiments, plating of metal onto a substrate is conducted to fill narrow (e.g., high-aspect-ratio feature cavities) in the dielectric layer before selective application of plating accelerator and filling of the wide feature cavity.
摘要翻译：电镀加速器选择性地施加到基本上未填充的宽（例如，低纵横比特征空腔）上，然后进行金属电镀以填充宽特征空腔并形成压花结构，其中宽特征在金属填充的宽特征空腔上的金属突起高于金属在场区域的高度，大多数覆盖层金属被使用非接触技术（例如化学湿法蚀刻）去除，在宽特征腔上方的金属保护金属在一些实施例中，将金属电镀到衬底上以填充狭窄（例如，高纵横比特征腔），并且可以避免金属互连和介电绝缘层的侵蚀。在介电层中选择性地施加电镀加速器和填充宽特征腔。

8. 发明申请

US20090277867A1 Topography reduction and control by selective accelerator removal 有权
标题翻译：通过选择性促进剂去除的地形减少和控制
公开(公告)号：US20090277867A1
公开(公告)日：2009-11-12
申请号：US11602128
申请日：2006-11-20
申请人： Steven T. Mayer , Mark L. Rea , Richard S. Hill , Avishai Kepten , R. Marshall Stowell , Eric G. Webb
发明人： Steven T. Mayer , Mark L. Rea , Richard S. Hill , Avishai Kepten , R. Marshall Stowell , Eric G. Webb
IPC分类号： B44C1/22 , B05D5/12
CPC分类号： C25D17/14 , B23H5/08 , C25D5/02 , C25D5/06 , C25D5/08 , C25D5/34 , C25D7/123 , C25D17/001 , C25D17/06 , C25F3/16 , C25F3/30 , H01L21/02068 , H01L21/2885 , H01L21/32115 , H01L21/3212 , H01L21/32134 , H01L21/7684 , H01L21/76849 , H01L21/76877
摘要： Plating accelerator is applied selectively to a substantially-unfilled wide (e.g., low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill the wide feature cavity and to form an embossed structure in which the height of a wide-feature metal protrusion over the metal-filled wide-feature cavity is higher than the height of metal over field regions. Most of the overburden metal is removed using non-contact techniques, such as chemical wet etching. Metal above the wide feature cavity protects the metal-filled wide-feature interconnect against dishing, and improved planarization techniques avoid erosion of the metal interconnect and dielectric insulating layer. In some embodiments, plating of metal onto a substrate is conducted to fill narrow (e.g., high-aspect-ratio feature cavities) in the dielectric layer before selective application of plating accelerator and filling of the wide feature cavity.
摘要翻译：电镀加速器选择性地施加到基本上未填充的宽（例如，低纵横比特征空腔）上，然后进行金属电镀以填充宽特征空腔并形成压花结构，其中宽特征在金属填充的宽特征空腔上的金属突起高于金属在场区域的高度，大多数覆盖层金属被使用非接触技术（例如化学湿法蚀刻）去除，在宽特征腔上方的金属保护金属在一些实施例中，将金属电镀到衬底上以填充狭窄（例如，高纵横比特征腔），并且可以避免金属互连和介电绝缘层的侵蚀。在介电层中选择性地施加电镀加速器和填充宽特征腔。

9. 发明授权

US08470191B2 Topography reduction and control by selective accelerator removal 有权
公开(公告)号：US08470191B2
公开(公告)日：2013-06-25
申请号：US11890790
申请日：2007-08-06
申请人： Steven T. Mayer , Mark L. Rea , Richard S. Hill , Avishai Kepten , R. Marshall Stowell , Eric G. Webb
发明人： Steven T. Mayer , Mark L. Rea , Richard S. Hill , Avishai Kepten , R. Marshall Stowell , Eric G. Webb
IPC分类号： C23F1/02
CPC分类号： C25D17/14 , B23H5/08 , C25D5/02 , C25D5/06 , C25D5/08 , C25D5/34 , C25D7/123 , C25D17/001 , C25D17/06 , C25F3/16 , C25F3/30 , H01L21/02068 , H01L21/2885 , H01L21/32115 , H01L21/3212 , H01L21/32134 , H01L21/7684 , H01L21/76849 , H01L21/76877
摘要： Plating accelerator is applied selectively to a substantially-unfilled wide (e.g., low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill the wide feature cavity and to form an embossed structure in which the height of a wide-feature metal protrusion over the metal-filled wide-feature cavity is higher than the height of metal over field regions. Most of the overburden metal is removed using non-contact techniques, such as chemical wet etching. Metal above the wide feature cavity protects the metal-filled wide-feature interconnect against dishing, and improved planarization techniques avoid erosion of the metal interconnect and dielectric insulating layer. In some embodiments, plating of metal onto a substrate is conducted to fill narrow (e.g., high-aspect-ratio feature cavities) in the dielectric layer before selective application of plating accelerator and filling of the wide feature cavity.

10. 发明申请

US20090280649A1 Topography reduction and control by selective accelerator removal 有权
公开(公告)号：US20090280649A1
公开(公告)日：2009-11-12
申请号：US11890790
申请日：2007-08-06
申请人： Steven T. Mayer , Mark L. Rea , Richard S. Hill , Avishai Kepten , R. Marshall Stowell , Eric G. Webb
发明人： Steven T. Mayer , Mark L. Rea , Richard S. Hill , Avishai Kepten , R. Marshall Stowell , Eric G. Webb
IPC分类号： H01L21/44 , C25D17/00 , H01L21/306
CPC分类号： C25D17/14 , B23H5/08 , C25D5/02 , C25D5/06 , C25D5/08 , C25D5/34 , C25D7/123 , C25D17/001 , C25D17/06 , C25F3/16 , C25F3/30 , H01L21/02068 , H01L21/2885 , H01L21/32115 , H01L21/3212 , H01L21/32134 , H01L21/7684 , H01L21/76849 , H01L21/76877
摘要： Plating accelerator is applied selectively to a substantially-unfilled wide (e.g., low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill the wide feature cavity and to form an embossed structure in which the height of a wide-feature metal protrusion over the metal-filled wide-feature cavity is higher than the height of metal over field regions. Most of the overburden metal is removed using non-contact techniques, such as chemical wet etching. Metal above the wide feature cavity protects the metal-filled wide-feature interconnect against dishing, and improved planarization techniques avoid erosion of the metal interconnect and dielectric insulating layer. In some embodiments, plating of metal onto a substrate is conducted to fill narrow (e.g., high-aspect-ratio feature cavities) in the dielectric layer before selective application of plating accelerator and filling of the wide feature cavity.

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