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    • 1. 发明授权
    • Removal of field and embedded metal by spin spray etching
    • 通过旋转喷涂蚀刻去除场和嵌入金属
    • US5486234A
    • 1996-01-23
    • US375054
    • 1995-01-19
    • Robert J. ContoliniSteven T. MayerLisa A. Tarte
    • Robert J. ContoliniSteven T. MayerLisa A. Tarte
    • H01L21/3213H01L21/768H01L21/00
    • H01L21/76838H01L21/32134
    • A process of removing both the field metal, such as copper, and a metal, such as copper, embedded into a dielectric or substrate at substantially the same rate by dripping or spraying a suitable metal etchant onto a spinning wafer to etch the metal evenly on the entire surface of the wafer. By this process the field metal is etched away completely while etching of the metal inside patterned features in the dielectric at the same or a lesser rate. This process is dependent on the type of chemical etchant used, the concentration and the temperature of the solution, and also the rate of spin speed of the wafer during the etching. The process substantially reduces the metal removal time compared to mechanical polishing, for example, and can be carried out using significantly less expensive equipment.
    • 通过将合适的金属蚀刻剂滴落或喷涂到旋转的晶片上以均匀地蚀刻金属,以基本上相同的速率将现场金属(例如铜)和金属(例如铜)两者嵌入电介质或基底中的步骤 晶片的整个表面。 通过该处理,在以相同或较小的速率蚀刻电介质中的图案化特征内的金属的同时蚀刻完全场地金属。 该过程取决于所使用的化学蚀刻剂的类型,溶液的浓度和温度,以及蚀刻期间晶片的旋转速度。 例如,与机械抛光相比,该方法显着降低了金属去除时间,并且可以使用显着更便宜的设备进行。