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1. 发明申请

US20050034816A1 Plasma generation and control using a dual frequency RF source 有权
标题翻译：使用双频RF源的等离子体发生和控制
公开(公告)号：US20050034816A1
公开(公告)日：2005-02-17
申请号：US10843914
申请日：2004-05-12
申请人： Steven Shannon , Alex Paterson , Theodoros Panagopoulos , John Holland , Dennis Grimard , Yashushi Takakura
发明人： Steven Shannon , Alex Paterson , Theodoros Panagopoulos , John Holland , Dennis Grimard , Yashushi Takakura
IPC分类号： H01L21/3065 , H01J37/32 , C23F1/00
CPC分类号： H01J37/32082 , H01J37/32165 , H01J37/32706
摘要： A method and apparatus for generating and controlling a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method includes the steps of supplying a first RF signal from the source to an electrode within the processing chamber at a first frequency and supplying a second RF signal from the source to the electrode within the processing chamber at a second frequency. The second frequency is different from the first frequency by an amount equal to a desired frequency. Characteristics of a plasma formed in the chamber establish a sheath modulation at the desired frequency.
摘要翻译：提供了一种使用双频RF源在半导体衬底处理室中产生和控制等离子体的方法和装置。该方法包括以第一频率将来自源的第一RF信号提供给处理室内的电极的步骤，并以第二频率将来自源的第二RF信号提供给处理室内的电极。第二频率与第一频率不等于期望频率的量。在腔室中形成的等离子体的特性以期望的频率建立护套调制。

2. 发明申请

US20070006971A1 PLASMA GENERATION AND CONTROL USING A DUAL FREQUENCY RF SOURCE 审中-公开
标题翻译：使用双频RF源的等离子体生成和控制
公开(公告)号：US20070006971A1
公开(公告)日：2007-01-11
申请号：US11531615
申请日：2006-09-13
申请人： Steven Shannon , Alex Paterson , Theodoros Panagopoulos , John Holland , Dennis Grimard , Yashushi Takakura
发明人： Steven Shannon , Alex Paterson , Theodoros Panagopoulos , John Holland , Dennis Grimard , Yashushi Takakura
IPC分类号： C23F1/00
CPC分类号： H01J37/32082 , H01J37/32165 , H01J37/32706
摘要： A method and apparatus for generating and controlling a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method includes the steps of supplying a first RF signal from the source to an electrode within the processing chamber at a first frequency and supplying a second RF signal from the source to the electrode within the processing chamber at a second frequency. The second frequency is different from the first frequency by an amount equal to a desired frequency. Characteristics of a plasma formed in the chamber establish a sheath modulation at the desired frequency.
摘要翻译：提供了一种使用双频RF源在半导体衬底处理室中产生和控制等离子体的方法和装置。该方法包括以第一频率将来自源的第一RF信号提供给处理室内的电极的步骤，并以第二频率将来自源的第二RF信号提供给处理室内的电极。第二频率与第一频率不等于期望频率的量。在腔室中形成的等离子体的特性以期望的频率建立护套调制。

3. 发明授权

US07431857B2 Plasma generation and control using a dual frequency RF source 有权
标题翻译：使用双频RF源的等离子体发生和控制
公开(公告)号：US07431857B2
公开(公告)日：2008-10-07
申请号：US10843914
申请日：2004-05-12
申请人： Steven C. Shannon , Alex Paterson , Theodoros Panagopoulos , John P. Holland , Dennis Grimard , Yashushi Takakura
发明人： Steven C. Shannon , Alex Paterson , Theodoros Panagopoulos , John P. Holland , Dennis Grimard , Yashushi Takakura
IPC分类号： G01R31/00
CPC分类号： H01J37/32082 , H01J37/32165 , H01J37/32706
摘要： A method and apparatus for generating and controlling a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method includes the steps of supplying a first RF signal from the source to an electrode within the processing chamber at a first frequency and supplying a second RF signal from the source to the electrode within the processing chamber at a second frequency. The second frequency is different from the first frequency by an amount equal to a desired frequency. Characteristics of a plasma formed in the chamber establish a sheath modulation at the desired frequency.
摘要翻译：提供了一种使用双频RF源在半导体衬底处理室中产生和控制等离子体的方法和装置。该方法包括以第一频率将来自源的第一RF信号提供给处理室内的电极的步骤，并以第二频率将来自源的第二RF信号提供给处理室内的电极。第二频率与第一频率不等于期望频率的量。在腔室中形成的等离子体的特性以期望的频率建立护套调制。

4. 发明申请

US20060266735A1 Plasma generation and control using dual frequency RF signals 有权
公开(公告)号：US20060266735A1
公开(公告)日：2006-11-30
申请号：US11416468
申请日：2006-05-02
申请人： Steven Shannon , Alexander Paterson , Theodoros Panagopoulos , John Holland , Dennis Grimard , Daniel Hoffman
发明人： Steven Shannon , Alexander Paterson , Theodoros Panagopoulos , John Holland , Dennis Grimard , Daniel Hoffman
IPC分类号： G01L21/30
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/32431
摘要： A method for controlling a plasma in a semiconductor substrate processing chamber is provided. The method includes the steps of supplying a first RF signal to a first electrode within the processing chamber at a first frequency selected to cause plasma sheath oscillation at the first frequency; and supplying a second RF signal from the source to the first electrode at a second frequency selected to cause plasma sheath oscillation at the second frequency, wherein the second frequency is different from the first frequency by a differential equal to a desired frequency selected to cause plasma sheath oscillation at the desired frequency.

5. 发明申请

US20050090118A1 Plasma control using dual cathode frequency mixing 有权
标题翻译：等离子体控制采用双阴极混频
公开(公告)号：US20050090118A1
公开(公告)日：2005-04-28
申请号：US10823364
申请日：2004-04-12
申请人： Steven Shannon , Dennis Grimard , Theodoros Panagopoulos , Daniel Hoffman , Michael Chafin , Troy Detrick , Alexander Paterson , Jingbao Liu , Taeho Shin , Bryan Pu
发明人： Steven Shannon , Dennis Grimard , Theodoros Panagopoulos , Daniel Hoffman , Michael Chafin , Troy Detrick , Alexander Paterson , Jingbao Liu , Taeho Shin , Bryan Pu
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/302 , H01L21/461
CPC分类号： H01J37/32082 , H01J37/32165
摘要： A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.
摘要翻译：提供一种使用双频RF源控制半导体衬底处理室中的等离子体特性的方法和装置。该方法包括向设置在处理室中的第一电极提供第一RF信号，并向第一电极提供第二RF信号，其中第一和第二RF信号之间的相互作用用于控制等离子体的至少一个特性形成在处理室中。

6. 发明申请

US20070000611A1 PLASMA CONTROL USING DUAL CATHODE FREQUENCY MIXING 审中-公开
标题翻译：使用双阴极频率混合的等离子体控制
公开(公告)号：US20070000611A1
公开(公告)日：2007-01-04
申请号：US11530670
申请日：2006-09-11
申请人： Steven Shannon , Dennis Grimard , Theodoros Panagopoulos , Daniel Hoffman , Michael Chafin , Troy Detrick , Alexander Paterson , Jingbao Liu , Taeho Shin , Bryan Pu
发明人： Steven Shannon , Dennis Grimard , Theodoros Panagopoulos , Daniel Hoffman , Michael Chafin , Troy Detrick , Alexander Paterson , Jingbao Liu , Taeho Shin , Bryan Pu
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32082 , H01J37/32165
摘要： A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.
摘要翻译：提供一种使用双频RF源控制半导体衬底处理室中的等离子体特性的方法和装置。该方法包括向设置在处理室中的第一电极提供第一RF信号，并向第一电极提供第二RF信号，其中第一和第二RF信号之间的相互作用用于控制等离子体的至少一个特性形成在处理室中。

7. 发明申请

US20100326602A1 ELECTROSTATIC CHUCK 审中-公开
标题翻译：静电卡
公开(公告)号：US20100326602A1
公开(公告)日：2010-12-30
申请号：US12495252
申请日：2009-06-30
申请人： Terry BLUCK , Terry Pederson , Dennis Grimard
发明人： Terry BLUCK , Terry Pederson , Dennis Grimard
IPC分类号： H01L21/683 , H01L21/3065 , B05C13/02
CPC分类号： H01L21/6831
摘要： An isolator for heat transfer gas conduits of an electrostatic chuck is described. The isolator includes a sleeve and a body positioned in the sleeve to form an annulus between the body and sleeve that allows for flow of the heat transfer gas. The body is positioned against the puck of the chuck, and may be supported in this position by a spring. A silicon seal may be provided between the sleeve and the puck to prevent plasma from forming in the conduits.
摘要翻译：描述了用于静电卡盘的传热气体导管的隔离器。隔离器包括套筒和定位在套筒中的主体，以在主体和套筒之间形成允许传热气体流动的环形空间。主体抵靠卡盘的圆盘定位，并且可以通过弹簧支撑在该位置。可以在套筒和圆盘之间设置硅密封件，以防止等离子体在导管中形成。

8. 发明申请

US20090086400A1 ELECTROSTATIC CHUCK APPARATUS 审中-公开
标题翻译：静电卡装置
公开(公告)号：US20090086400A1
公开(公告)日：2009-04-02
申请号：US11864225
申请日：2007-09-28
申请人： Tugrul Samir , Dennis Grimard
发明人： Tugrul Samir , Dennis Grimard
IPC分类号： H01L21/683 , H01L21/67 , H02N13/00
CPC分类号： H01L21/68735 , H01L21/6833
摘要： An electrostatic chuck for holding a substrate has a circular dielectric member having a top surface configured to support the substrate, the top surface having a plurality of mesas consisting of n subsets, wherein mesas of each subset are distributed along one of a plurality of concentric bolt circles of increasing radii, and wherein all of the concentric bolt circles center about the center of the circular dielectric member.
摘要翻译：用于保持基板的静电卡盘具有圆形电介质构件，其具有构造成支撑基板的顶表面，顶表面具有由n个子组成的多个台面，其中每个子集的台面沿着多个同心螺栓圆的半径增加，并且其中所有同心螺栓圆围绕圆形电介质构件的中心围绕。

9. 发明申请

US20120138230A1 SYSTEMS AND METHODS FOR MOVING WEB ETCH, CVD, AND ION IMPLANT 审中-公开
标题翻译：用于移动WEB ETCH，CVD和离子植入物的系统和方法
公开(公告)号：US20120138230A1
公开(公告)日：2012-06-07
申请号：US13312957
申请日：2011-12-06
申请人： Terry BLUCK , Young Kyu Cho , Dennis Grimard , Karthik Janakiraman , Moon Chun
发明人： Terry BLUCK , Young Kyu Cho , Dennis Grimard , Karthik Janakiraman , Moon Chun
IPC分类号： B65G15/48 , C23F1/08 , G21K5/10 , C23C16/458
CPC分类号： G21K5/10 , C23C16/4583 , C23C16/54 , G21K5/02 , H01L21/67706 , H01L21/6776
摘要： Systems and methods for moving substrates through process chambers for photovoltaic (PV) or solar cell applications are disclosed. In particular, systems and methods for moving substrates through process chambers using a conveyor belt are disclosed. The conveyor belt can be used to move the substrates through etch chambers, chemical vapor deposition (CVD) chambers, and/or ion implant chambers, and the like.
摘要翻译：公开了用于将基板移动到用于光伏（PV）或太阳能电池应用的处理室的系统和方法。特别地，公开了使用输送带将基板移动通过处理室的系统和方法。传送带可用于通过蚀刻室，化学气相沉积（CVD）室和/或离子注入室等移动基板。

10. 发明申请

US20090086401A1 ELECTROSTATIC CHUCK APPARATUS 审中-公开
标题翻译：静电卡装置
公开(公告)号：US20090086401A1
公开(公告)日：2009-04-02
申请号：US11864288
申请日：2007-09-28
申请人： Tugrul Samir , Terry Bluck , Dennis Grimard
发明人： Tugrul Samir , Terry Bluck , Dennis Grimard
IPC分类号： H01L21/683 , H01L21/67 , H02N13/00
CPC分类号： H01L21/6831
摘要： An electrostatic chuck includes an angled conduit, or an angled laser drilled passage, through which a heat transfer gas is provided. A segment of the angled conduit and/or the angled laser drilled passage extends along an axis different from an axis of the electric field generated to hold a substrate to the chuck, thereby minimizing plasma arcing and backside gas ionization. A first plug may be inserted into the conduit, wherein a segment of a first exterior channel thereof extends along an axis different from an axis of the electric field. A first and second plug may be inserted into a ceramic sleeve which extends through at least one of the dielectric member and the electrode. Finally, the surface of the dielectric member may comprise embossments arranged at radial distances from the center of the dielectric member so as to improve heat transfer and gas distribution.
摘要翻译：静电卡盘包括成角度的导管或成角度的激光钻孔通道，通过该通道提供传热气体。成角度的管道和/或成角度的激光钻孔通道的一段沿着不同于将基板保持在卡盘上的电场的轴线不同的轴线延伸，从而最小化等离子体电弧放电和背侧气体电离。第一塞子可以插入导管中，其中第一外部通道的一段沿着不同于电场的轴线的轴线延伸。第一和第二插头可以插入延伸穿过电介质构件和电极中的至少一个的陶瓷套管中。最后，电介质构件的表面可以包括布置在离电介质构件的中心的径向距离处的凸起，以便改善传热和气体分布。

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