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1. 发明授权

US08980005B2 Liner assembly for chemical vapor deposition chamber 有权
标题翻译：用于化学气相沉积室的衬套组件
公开(公告)号：US08980005B2
公开(公告)日：2015-03-17
申请号：US13193570
申请日：2011-07-28
申请人： David K. Carlson , Mehmet Tugrul Samir , Nyi O. Myo
发明人： David K. Carlson , Mehmet Tugrul Samir , Nyi O. Myo
IPC分类号： C23C16/458 , C23C16/44 , C23F1/00 , H01L21/306 , C23C16/455 , C23C16/06
CPC分类号： C23C16/4404 , C23C16/45574 , C23C16/45578
摘要： Embodiments described herein relate to an apparatus and method for lining a processing region within a chamber. In one embodiment, a modular liner assembly for a substrate processing chamber is provided. The modular liner assembly includes a first liner and a second liner, each of the first liner and second liner comprising an annular body sized to be received in a processing volume of a chamber, and at least a third liner comprising a body that extends through the first liner and the second liner, the third liner having a first end disposed in the process volume and a second end disposed outside of the chamber.
摘要翻译：本文所述的实施例涉及用于衬里室内的处理区域的装置和方法。在一个实施例中，提供了一种用于衬底处理室的模块化衬垫组件。所述模块化衬垫组件包括第一衬垫和第二衬垫，所述第一衬垫和所述第二衬套中的每一个包括尺寸适于容纳在室的处理容积中的环形体，以及至少第三衬套，所述第三衬套包括延伸穿过所述腔体的主体第一衬里和第二衬套，第三衬里具有设置在处理体积中的第一端和设置在室外的第二端。

2. 发明申请

US20130019803A1 METHODS AND APPARATUS FOR THE DEPOSITION OF MATERIALS ON A SUBSTRATE 有权
标题翻译：在基材上沉积材料的方法和装置
公开(公告)号：US20130019803A1
公开(公告)日：2013-01-24
申请号：US13547487
申请日：2012-07-12
申请人： TUGRUL SAMIR , NYI OO MYO
发明人： TUGRUL SAMIR , NYI OO MYO
IPC分类号： C23C16/46
CPC分类号： C23C16/45504 , C23C16/45563 , C23C16/45565 , C23C16/45568 , C23C16/4557 , C23C16/45572 , C23C16/45574 , C23C16/45578 , C23C16/4558
摘要： Methods and apparatus for deposition of materials on substrates are provided herein. In some embodiments, an apparatus may include a process chamber having a substrate support; a heating system to provide heat energy to the substrate support; a gas inlet port disposed to a first side of the substrate support to provide at least one of a first process gas or a second process gas across a processing surface of the substrate; a first gas distribution conduit disposed above the substrate support and having one or more first outlets disposed along the length of the first gas distribution conduit to provide a third process gas to the processing surface of the substrate, wherein the one or more first outlets are substantially linearly arranged; and an exhaust manifold disposed to a second side of the substrate support opposite the gas inlet port to exhaust the process gases from the process chamber.
摘要翻译：本文提供了在基板上沉积材料的方法和装置。在一些实施例中，装置可以包括具有基板支撑件的处理室; 用于向衬底支撑件提供热能的加热系统; 气体入口，设置在所述衬底支撑件的第一侧上，以提供穿过所述衬底的处理表面的第一工艺气体或第二工艺气体中的至少一种; 第一气体分配导管，设置在所述衬底支撑件上方，并且具有沿着所述第一气体分配导管的长度设置的一个或多个第一出口，以向所述衬底的所述处理表面提供第三工艺气体，其中所述一个或多个第一出口基本上线性排列; 以及设置在与气体入口相对的衬底支撑件的第二侧上以排出来自处理室的处理气体的排气歧管。

3. 发明申请

US20090151872A1 LOW COST HIGH CONDUCTANCE CHAMBER 审中-公开
标题翻译：低成本高性能室
公开(公告)号：US20090151872A1
公开(公告)日：2009-06-18
申请号：US11958235
申请日：2007-12-17
申请人： Tugrul Samir , Michael S. Barnes , Terry Bluck
发明人： Tugrul Samir , Michael S. Barnes , Terry Bluck
IPC分类号： H01B13/00 , B23P17/04 , C23C16/54
CPC分类号： H01L21/67017 , H01L21/6719 , Y10T29/49
摘要： A process chamber having high conductance and a method of manufacturing the process chamber are disclosed. The process chamber is machined from a single piece of aluminum where a process cavity and a pump cavity are created by intersecting cylinders. A substrate opening is also created at a bottom of the process cavity to provide conduit for services, such as cooling gas and electrical connections. A large undercut area is formed at a top of the pump cavity between the pump cavity and the process cavity. The undercut extends past the process chamber centerline at the process cavity. A circular saw is used to remove material and create a plenum which extends beyond the process cavity centerline.
摘要翻译：公开了具有高电导性的处理室和制造处理室的方法。处理室由单片铝加工，其中通过相交的圆柱体形成工艺腔和泵腔。在工艺空腔的底部还形成衬底开口，以提供诸如冷却气体和电气连接等服务的导管。在泵腔和处理腔之间的泵腔的顶部形成有大的底切区域。底切延伸经过过程腔中心线。使用圆锯去除材料并形成延伸超过工艺腔中心线的气室。

4. 发明申请

US20090086400A1 ELECTROSTATIC CHUCK APPARATUS 审中-公开
标题翻译：静电卡装置
公开(公告)号：US20090086400A1
公开(公告)日：2009-04-02
申请号：US11864225
申请日：2007-09-28
申请人： Tugrul Samir , Dennis Grimard
发明人： Tugrul Samir , Dennis Grimard
IPC分类号： H01L21/683 , H01L21/67 , H02N13/00
CPC分类号： H01L21/68735 , H01L21/6833
摘要： An electrostatic chuck for holding a substrate has a circular dielectric member having a top surface configured to support the substrate, the top surface having a plurality of mesas consisting of n subsets, wherein mesas of each subset are distributed along one of a plurality of concentric bolt circles of increasing radii, and wherein all of the concentric bolt circles center about the center of the circular dielectric member.
摘要翻译：用于保持基板的静电卡盘具有圆形电介质构件，其具有构造成支撑基板的顶表面，顶表面具有由n个子组成的多个台面，其中每个子集的台面沿着多个同心螺栓圆的半径增加，并且其中所有同心螺栓圆围绕圆形电介质构件的中心围绕。

5. 发明授权

US09499905B2 Methods and apparatus for the deposition of materials on a substrate 有权
标题翻译：用于在基材上沉积材料的方法和装置
公开(公告)号：US09499905B2
公开(公告)日：2016-11-22
申请号：US13547487
申请日：2012-07-12
申请人： Mehmet Tugrul Samir , Nyi Oo Myo
发明人： Mehmet Tugrul Samir , Nyi Oo Myo
IPC分类号： C23C16/455
CPC分类号： C23C16/45504 , C23C16/45563 , C23C16/45565 , C23C16/45568 , C23C16/4557 , C23C16/45572 , C23C16/45574 , C23C16/45578 , C23C16/4558
摘要： Methods and apparatus for deposition of materials on substrates are provided herein. In some embodiments, an apparatus may include a process chamber having a substrate support; a heating system to provide heat energy to the substrate support; a gas inlet port disposed to a first side of the substrate support to provide at least one of a first process gas or a second process gas across a processing surface of the substrate; a first gas distribution conduit disposed above the substrate support and having one or more first outlets disposed along the length of the first gas distribution conduit to provide a third process gas to the processing surface of the substrate, wherein the one or more first outlets are substantially linearly arranged; and an exhaust manifold disposed to a second side of the substrate support opposite the gas inlet port to exhaust the process gases from the process chamber.
摘要翻译：本文提供了在基板上沉积材料的方法和装置。在一些实施例中，装置可以包括具有基板支撑件的处理室; 用于向衬底支撑件提供热能的加热系统; 气体入口，设置在所述衬底支撑件的第一侧上，以提供穿过所述衬底的处理表面的第一工艺气体或第二工艺气体中的至少一种; 第一气体分配导管，设置在所述衬底支撑件上方，并且具有沿着所述第一气体分配导管的长度设置的一个或多个第一出口，以向所述衬底的所述处理表面提供第三工艺气体，其中所述一个或多个第一出口基本上线性排列; 以及设置在与气体入口相对的衬底支撑件的第二侧上以排出来自处理室的处理气体的排气歧管。

6. 发明申请

US20120240853A1 LINER ASSEMBLY FOR CHEMICAL VAPOR DEPOSITION CHAMBER 有权
标题翻译：化学气相沉积室内衬组件
公开(公告)号：US20120240853A1
公开(公告)日：2012-09-27
申请号：US13193570
申请日：2011-07-28
申请人： David K. Carlson , Mehmet Tugrul Samir , Nyi O. Myo
发明人： David K. Carlson , Mehmet Tugrul Samir , Nyi O. Myo
IPC分类号： C23C16/44 , C23C16/455
CPC分类号： C23C16/4404 , C23C16/45574 , C23C16/45578
摘要： Embodiments described herein relate to an apparatus and method for lining a processing region within a chamber. In one embodiment, a modular liner assembly for a substrate processing chamber is provided. The modular liner assembly includes a first liner and a second liner, each of the first liner and second liner comprising an annular body sized to be received in a processing volume of a chamber, and at least a third liner comprising a body that extends through the first liner and the second liner, the third liner having a first end disposed in the process volume and a second end disposed outside of the chamber.
摘要翻译：本文所述的实施例涉及用于衬里室内的处理区域的装置和方法。在一个实施例中，提供了一种用于衬底处理室的模块化衬垫组件。所述模块化衬垫组件包括第一衬垫和第二衬垫，所述第一衬垫和所述第二衬套中的每一个包括尺寸适于容纳在室的处理容积中的环形体，以及至少第三衬套，所述第三衬套包括延伸穿过所述腔体的主体第一衬里和第二衬套，第三衬里具有设置在处理体积中的第一端和设置在室外的第二端。

7. 发明申请

US20140199785A1 MULTIZONE CONTROL OF LAMPS IN A CONICAL LAMPHEAD USING PYROMETERS 有权
标题翻译：使用PYROMETERS在多功能灯中进行多光泽控制
公开(公告)号：US20140199785A1
公开(公告)日：2014-07-17
申请号：US13796169
申请日：2013-03-12
申请人： Joseph M. RANISH , Paul BRILLHART , Jose Antonio MARIN , Satheesh KUPPURAO , Balasubramanian RAMACHANDRAN , Swaminathan T. SRINIVASAN , Mehmet Tugrul SAMIR
发明人： Joseph M. RANISH , Paul BRILLHART , Jose Antonio MARIN , Satheesh KUPPURAO , Balasubramanian RAMACHANDRAN , Swaminathan T. SRINIVASAN , Mehmet Tugrul SAMIR
IPC分类号： H01L21/67 , H01L21/66
CPC分类号： C30B25/105 , C23C16/4583 , C23C16/481 , C23C16/52 , C30B25/08 , C30B25/12 , C30B25/14 , C30B25/16 , G01J5/0007 , G01J5/10 , G01J2005/106 , H01L21/0262 , H01L21/67115 , H01L21/67248 , H01L22/10 , H01L22/20
摘要： A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.
摘要翻译：描述了一种用于处理半导体衬底的方法和设备。该装置是具有光学透明的上部圆顶和下部圆顶的处理室。在处理过程中真空保持在处理室中。通过使热控制流体沿着加工区域外的上部圆顶流动来对上部圆顶进行热控制。散热灯靠近下穹顶定位，热传感器设置在灯之间。灯具已通电，并且控制器根据从热传感器接收的数据调节灯区的电源。

8. 发明授权

US08772055B1 Multizone control of lamps in a conical lamphead using pyrometers 有权
标题翻译：使用高温计对锥形灯头中的灯进行多区域控制
公开(公告)号：US08772055B1
公开(公告)日：2014-07-08
申请号：US13796169
申请日：2013-03-12
申请人： Joseph M. Ranish , Paul Brillhart , Jose Antonio Marin , Satheesh Kuppurao , Balasubramanian Ramachandran , Swaminathan T. Srinivasan , Mehmet Tugrul Samir
发明人： Joseph M. Ranish , Paul Brillhart , Jose Antonio Marin , Satheesh Kuppurao , Balasubramanian Ramachandran , Swaminathan T. Srinivasan , Mehmet Tugrul Samir
IPC分类号： H01L21/00 , B05C11/00 , H05B6/66
CPC分类号： C30B25/105 , C23C16/4583 , C23C16/481 , C23C16/52 , C30B25/08 , C30B25/12 , C30B25/14 , C30B25/16 , G01J5/0007 , G01J5/10 , G01J2005/106 , H01L21/0262 , H01L21/67115 , H01L21/67248 , H01L22/10 , H01L22/20
摘要： A method and apparatus for processing a semiconductor substrate is described. The apparatus is a process chamber having an optically transparent upper dome and lower dome. Vacuum is maintained in the process chamber during processing. The upper dome is thermally controlled by flowing a thermal control fluid along the upper dome outside the processing region. Thermal lamps are positioned proximate the lower dome, and thermal sensors are disposed among the lamps. The lamps are powered in zones, and a controller adjusts power to the lamp zones based on data received from the thermal sensors.
摘要翻译：描述了一种用于处理半导体衬底的方法和设备。该装置是具有光学透明的上部圆顶和下部圆顶的处理室。在处理过程中真空保持在处理室中。通过使热控制流体沿着加工区域外的上部圆顶流动来对上部圆顶进行热控制。散热灯靠近下穹顶定位，热传感器设置在灯之间。灯具已通电，并且控制器根据从热传感器接收的数据调节灯区的电源。

9. 发明授权

US09870919B2 Process chamber having separate process gas and purge gas regions 有权
公开(公告)号：US09870919B2
公开(公告)日：2018-01-16
申请号：US13864849
申请日：2013-04-17
申请人： Joseph M. Ranish , Paul Brillhart , Jose Antonio Marin , Satheesh Kuppurao , Balasubramanian Ramachandran , Swaminathan T. Srinivasan , Mehmet Tugrul Samir
发明人： Joseph M. Ranish , Paul Brillhart , Jose Antonio Marin , Satheesh Kuppurao , Balasubramanian Ramachandran , Swaminathan T. Srinivasan , Mehmet Tugrul Samir
IPC分类号： H01L21/02 , H01L21/67
CPC分类号： H01L21/0262 , H01L21/67017 , H01L21/67109 , H01L21/67115
摘要： Embodiments of the present invention generally relate to chambers and methods of processing substrates therein. The chambers generally include separate process gas and purge gas regions. The process gas region and purge gas region each have a respective gas inlet and gas outlet. The methods generally include positioning a substrate on a substrate support within the chamber. The plane of the substrate support defines the boundary between a process gas region and purge gas region. Purge gas is introduced into the purge gas region through at least one purge gas inlet, and removed from the purge gas region using at least one purge gas outlet. The process gas is introduced into the process gas region through at least one process gas inlet, and removed from the process gas region through at least one process gas outlet. The process gas is thermally decomposed to deposit a material on the substrate.

10. 发明申请

US20130288460A1 PROCESS CHAMBER HAVING SEPARATE PROCESS GAS AND PURGE GAS REGIONS 有权
标题翻译：具有独立工艺气体和纯净气体区域的过程室
公开(公告)号：US20130288460A1
公开(公告)日：2013-10-31
申请号：US13864849
申请日：2013-04-17
申请人： Joseph M. RANISH , Paul BRILLHART , Jose Antonio MARIN , Satheesh KUPPURAO , Balasubramanian RAMACHANDRAN , Swaminathan T. SRINIVASAN , Mehmet Tugrul SAMIR
发明人： Joseph M. RANISH , Paul BRILLHART , Jose Antonio MARIN , Satheesh KUPPURAO , Balasubramanian RAMACHANDRAN , Swaminathan T. SRINIVASAN , Mehmet Tugrul SAMIR
IPC分类号： H01L21/02
CPC分类号： H01L21/0262 , H01L21/67017 , H01L21/67109 , H01L21/67115
摘要： Embodiments of the present invention generally relate to chambers and methods of processing substrates therein. The chambers generally include separate process gas and purge gas regions. The process gas region and purge gas region each have a respective gas inlet and gas outlet. The methods generally include positioning a substrate on a substrate support within the chamber. The plane of the substrate support defines the boundary between a process gas region and purge gas region. Purge gas is introduced into the purge gas region through at least one purge gas inlet, and removed from the purge gas region using at least one purge gas outlet. The process gas is introduced into the process gas region through at least one process gas inlet, and removed from the process gas region through at least one process gas outlet. The process gas is thermally decomposed to deposit a material on the substrate.
摘要翻译：本发明的实施例一般涉及在其中处理衬底的腔室和方法。这些室通常包括单独的工艺气体和吹扫气体区域。处理气体区域和吹扫气体区域各自具有相应的气体入口和气体出口。所述方法通常包括将衬底定位在腔室内的衬底支撑件上。衬底支架的平面限定了工艺气体区域和吹扫气体区域之间的边界。吹扫气体通过至少一个吹扫气体入口被引入净化气体区域中，并且使用至少一个净化气体出口从净化气体区域中除去。工艺气体通过至少一个工艺气体入口引入工艺气体区域，并通过至少一个工艺气体出口从工艺气体区域中移出。工艺气体被热分解以在衬底上沉积材料。

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