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1. 发明授权

US07316199B2 Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber 失效
标题翻译：用于控制等离子体增强半导体晶片处理室中的磁场强度的方法和装置
公开(公告)号：US07316199B2
公开(公告)日：2008-01-08
申请号：US10146443
申请日：2002-05-14
申请人： Keiji Horioka , Chun Yan , Taeho Shin , Roger Alan Lindley , Qi Li , Panyin Hughes , Douglas H. Burns , Evans Y. Lee , Bryan Y. Pu
发明人： Keiji Horioka , Chun Yan , Taeho Shin , Roger Alan Lindley , Qi Li , Panyin Hughes , Douglas H. Burns , Evans Y. Lee , Bryan Y. Pu
IPC分类号： C23C16/00 , H01L21/306
CPC分类号： H01J37/32623 , H01J37/3266
摘要： A magnetic field generator for producing a magnetic field that accelerates plasma formation is placed proximate a reaction chamber of semiconductor substrate processing system. The magnetic field generator has four main magnetic coil sections for producing a magnetic field nearly parallel to the top surface of a support pedestal in the reaction chamber and four sub-magnetic coil sections placed generally coaxially with the main magnetic coil sections to produce a magnetic field of the direction opposite of that of the magnetic field produced with the main magnetic coil sections. In the magnetic field generator, magnetic fields of opposite polarities are superimposed on each other when electric currents of opposite directions are applied to the main and sub-magnetic coil sections.
摘要翻译：用于产生加速等离子体形成的磁场的磁场发生器放置在半导体衬底处理系统的反应室附近。磁场发生器具有四个主要的磁线圈部分，用于产生几乎平行于反应室中的支撑基座的顶表面的磁场和与主电磁线圈部分大致同轴放置的四个子磁线圈部分，以产生磁场的方向与由主电磁线圈段产生的磁场的方向相反。在磁场发生器中，相反极性的磁场在施加到主磁亚极部分和次磁线圈部分的相反方向的电流时彼此叠加。

2. 发明申请

US20080286979A1 Method of controlling sidewall profile by using intermittent, periodic introduction of cleaning species into the main plasma etching species 审中-公开
标题翻译：通过间歇地定期将清洗物质引入主等离子体蚀刻物质来控制侧壁轮廓的方法
公开(公告)号：US20080286979A1
公开(公告)日：2008-11-20
申请号：US12220503
申请日：2008-07-24
申请人： Taeho Shin , Jingbao Liu , Ajey M. Joshi , Jong Mun Kim , Wei-Te Wu
发明人： Taeho Shin , Jingbao Liu , Ajey M. Joshi , Jong Mun Kim , Wei-Te Wu
IPC分类号： H01L21/3065
CPC分类号： H01L21/76802 , H01L21/31122 , H01L21/31144
摘要： A method of removing a silicon-containing hard polymeric material from an opening leading to a recessed feature during the plasma etching of said recessed feature into a carbon-containing layer in a semiconductor substrate. The method comprises the intermittent use of a cleaning step within a continuous etching process, where at least one fluorine-containing cleaning agent species is added to already present etchant species of said continuous etching process for a limited time period, wherein the length of time of each cleaning step ranges from about 5% to about 100% of the time length of an etch step which either precedes or follows said cleaning step.
摘要翻译：在将所述凹入特征等离子体蚀刻到半导体衬底中的含碳层中时，从导通凹陷特征的开口去除含硅的硬质聚合物材料的方法。该方法包括在连续蚀刻过程中间歇地使用清洁步骤，其中在有限时间段内将至少一种含氟清洁剂种类添加到已存在的所述连续蚀刻工艺的蚀刻剂物质中，其中时间长度每个清洁步骤的范围是在所述清洁步骤之前或之后的蚀刻步骤的时间长度的约5％至约100％。

3. 发明授权

US07374636B2 Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor 失效
标题翻译：在磁场增强等离子体反应器中提供均匀等离子体的方法和装置
公开(公告)号：US07374636B2
公开(公告)日：2008-05-20
申请号：US10205870
申请日：2002-07-26
申请人： Keiji Horioka , Chun Yan , Taeho Shin , Roger Alan Lindley , Panyin Hughes , Douglas H. Burns , Evans Y. Lee , Bryan Y. Pu , Qi Li , Mahmoud Dahimene
发明人： Keiji Horioka , Chun Yan , Taeho Shin , Roger Alan Lindley , Panyin Hughes , Douglas H. Burns , Evans Y. Lee , Bryan Y. Pu , Qi Li , Mahmoud Dahimene
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/32623 , H01J37/3266
摘要： A method and apparatus for controlling a magnetic field gradient within a magnetically enhanced plasma reactor. The apparatus comprises a cathode pedestal supporting a wafer within an enclosure, a plurality of electromagnets positioned proximate the enclosure for producing a magnetic field in the enclosure and a magnetic field control element, positioned proximate the electromagnets, for controlling the magnetic field proximate a specific region of the wafer.
摘要翻译：一种用于控制磁增强等离子体反应器内的磁场梯度的方法和装置。该装置包括支撑外壳内的晶片的阴极基座，靠近外壳定位的多个电磁体，用于在外壳中产生磁场，并且磁场控制元件位于电磁体附近，用于控制靠近特定区域的磁场的晶片。

4. 发明授权

US07838430B2 Plasma control using dual cathode frequency mixing 有权
标题翻译：等离子体控制采用双阴极混频
公开(公告)号：US07838430B2
公开(公告)日：2010-11-23
申请号：US10823364
申请日：2004-04-12
申请人： Steven C. Shannon , Dennis S. Grimard , Theodoros Panagopoulos , Daniel J. Hoffman , Michael G. Chafin , Troy S. Detrick , Alexander Paterson , Jingbao Liu , Taeho Shin , Bryan Y. Pu
发明人： Steven C. Shannon , Dennis S. Grimard , Theodoros Panagopoulos , Daniel J. Hoffman , Michael G. Chafin , Troy S. Detrick , Alexander Paterson , Jingbao Liu , Taeho Shin , Bryan Y. Pu
IPC分类号： H01L21/302
CPC分类号： H01J37/32082 , H01J37/32165
摘要： A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.
摘要翻译：提供一种使用双频RF源控制半导体衬底处理室中的等离子体特性的方法和装置。该方法包括向设置在处理室中的第一电极提供第一RF信号，并向第一电极提供第二RF信号，其中第一和第二RF信号之间的相互作用用于控制等离子体的至少一个特性形成在处理室中。

5. 发明申请

US20070243714A1 Method of controlling silicon-containing polymer build up during etching by using a periodic cleaning step 审中-公开
标题翻译：通过使用周期性清洁步骤在蚀刻期间控制含硅聚合物积累的方法
公开(公告)号：US20070243714A1
公开(公告)日：2007-10-18
申请号：US11406000
申请日：2006-04-18
申请人： Taeho Shin , Jingbao Liu , Ajey Joshi , Jong Kim , Wei-Te Wu
发明人： Taeho Shin , Jingbao Liu , Ajey Joshi , Jong Kim , Wei-Te Wu
IPC分类号： H01L21/461 , C03C15/00
CPC分类号： H01L21/76802 , H01L21/31122 , H01L21/31144
摘要： A method of removing a silicon-containing hard polymeric material from an opening leading to a recessed feature during the plasma etching of said recessed feature into a carbon-containing layer in a semiconductor substrate. The method comprises the intermittent use of a cleaning step within a continuous etching process, where at least one fluorine-containing cleaning agent species is added to already present etchant species of said continuous etching process for a limited time period, wherein the length of time of each cleaning step ranges from about 5% to about 100% of the time length of an etch step which either precedes or follows said cleaning step.
摘要翻译：在将所述凹入特征等离子体蚀刻到半导体衬底中的含碳层中时，从导通凹陷特征的开口去除含硅的硬质聚合物材料的方法。该方法包括在连续蚀刻过程中间歇地使用清洁步骤，其中在有限时间段内将至少一种含氟清洁剂种类添加到已存在的所述连续蚀刻工艺的蚀刻剂物质中，其中时间长度每个清洁步骤的范围是在所述清洁步骤之前或之后的蚀刻步骤的时间长度的约5％至约100％。

6. 发明申请

US20050090118A1 Plasma control using dual cathode frequency mixing 有权
标题翻译：等离子体控制采用双阴极混频
公开(公告)号：US20050090118A1
公开(公告)日：2005-04-28
申请号：US10823364
申请日：2004-04-12
申请人： Steven Shannon , Dennis Grimard , Theodoros Panagopoulos , Daniel Hoffman , Michael Chafin , Troy Detrick , Alexander Paterson , Jingbao Liu , Taeho Shin , Bryan Pu
发明人： Steven Shannon , Dennis Grimard , Theodoros Panagopoulos , Daniel Hoffman , Michael Chafin , Troy Detrick , Alexander Paterson , Jingbao Liu , Taeho Shin , Bryan Pu
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/302 , H01L21/461
CPC分类号： H01J37/32082 , H01J37/32165
摘要： A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.
摘要翻译：提供一种使用双频RF源控制半导体衬底处理室中的等离子体特性的方法和装置。该方法包括向设置在处理室中的第一电极提供第一RF信号，并向第一电极提供第二RF信号，其中第一和第二RF信号之间的相互作用用于控制等离子体的至少一个特性形成在处理室中。

7. 发明授权

US06372151B1 Storage poly process without carbon contamination 失效
标题翻译：储存聚合工艺无碳污染
公开(公告)号：US06372151B1
公开(公告)日：2002-04-16
申请号：US09362929
申请日：1999-07-27
申请人： Taeho Shin , Nam-Hun Kim , Jeffrey D. Chinn
发明人： Taeho Shin , Nam-Hun Kim , Jeffrey D. Chinn
IPC分类号： B44C122
CPC分类号： H01L21/32137
摘要： The method of present invention etches a layer of polysilicon formed on a substrate disposed within a substrate processing chamber. The method flows an etchant gas including sulfur hexafluoride, an oxygen source and a nitrogen source into the processing chamber and ignites a plasma from the etchant gas to etch the polysilicon formed over the substrate. In a preferred embodiment, the etchant gas consists essentially of SF6, molecular oxygen (O2) and molecular nitrogen (N2). In a more preferred embodiment the etchant gas includes a volume ratio of molecular oxygen to the sulfur hexafluoride of between 0.5:1 and 1:1 inclusive and a volume ratio of the sulfur hexafluoride to molecular nitrogen of between 1:1 and 4:1 inclusive. In an even more preferred embodiment, the volume ratio of O2 to sulfur hexafluoride is between 0.5:1 and 1:1 inclusive and the volume ratio of sulfur hexafluoride to N2 is between 1.5:1 and 2:1 inclusive.
摘要翻译：本发明的方法蚀刻形成在设置在衬底处理室内的衬底上的多晶硅层。该方法将包括六氟化硫，氧源和氮源的蚀刻剂气体流入处理室，并且从蚀刻剂气体点燃等离子体以蚀刻形成在衬底上的多晶硅。在优选的实施方案中，蚀刻剂气体基本上由SF 6，分子氧（O 2）和分子氮（N 2）组成。在更优选的实施方案中，蚀刻剂气体包括分子氧与六氟化硫的体积比在0.5:1至1:1之间，六氟化硫与分子氮的体积比在1:1至4:1之间，包括。在更优选的实施方案中，O 2与六氟化硫的体积比在0.5:1和1:1之间，并且六氟化硫与N 2的体积比在1.5:1和2:1之间。

8. 发明授权

US06312616B1 Plasma etching of polysilicon using fluorinated gas mixtures 失效
标题翻译：使用氟化气体混合物等离子体蚀刻多晶硅
公开(公告)号：US06312616B1
公开(公告)日：2001-11-06
申请号：US09206201
申请日：1998-12-03
申请人： Jeffrey Chinn , Taeho Shin , Nam-Hun Kim
发明人： Jeffrey Chinn , Taeho Shin , Nam-Hun Kim
IPC分类号： H01L21461
CPC分类号： H01L21/32137
摘要： A method of etching polysilicon using a fluorinated gas chemistry to provide an etch rate in excess of 10,000 Å/min and a photoresist selectivity of better than 3:1. The method is accomplished using a combination of a fluorinated gas and a fluorocarbon gas, e.g., 50-60 sccm of SF6, 1-40 sccm of CHF3, and 40-50 sccm of O2 with a total chamber pressure of 4-60 mTorr. The power applied to the etch chemistry to produce an etching plasma is 400-1500 watts of inductive source power (at 13.56 MHz) via an inductively coupled antenna and 200-1500 watts (at 12.56 MHz) of cathode bias power applied via a cathode electrode within a wafer support pedestal. The pedestal supporting the wafer was maintained at 0-50 degrees C.
摘要翻译：使用氟化气体化学法蚀刻多晶硅以提供超过10,000埃的蚀刻速率和优于3:1的光致抗蚀剂选择性的方法。该方法使用氟化气体和碳氟化合物气体的组合来实现，例如50-60sccm的SF 6，1-40sccm的CHF 3和40-50sccm的O 2，总室压力为4-60mTorr。施加到蚀刻化学品以产生蚀刻等离子体的功率通过电感耦合天线为400-1500瓦特的感应源功率（13.56MHz），通过阴极电极施加200-1500瓦特（12.56MHz）阴极偏置功率在晶片支撑基座内。支撑晶片的底座保持在0-50摄氏度

9. 发明授权

US07736914B2 Plasma control using dual cathode frequency mixing and controlling the level of polymer formation 失效
标题翻译：等离子体控制采用双阴极混合和控制聚合物形成的水平
公开(公告)号：US07736914B2
公开(公告)日：2010-06-15
申请号：US11947663
申请日：2007-11-29
申请人： Jingbao Liu , Taeho Shin , Bryan Y. Pu
发明人： Jingbao Liu , Taeho Shin , Bryan Y. Pu
IPC分类号： H01L21/00 , H01L21/66 , H01L21/20
CPC分类号： H01J37/32165 , H01J37/32091 , H01L21/31116 , H01L21/31144 , H01L21/67069 , H01L22/20
摘要： Methods for processing a substrate in a processing chamber using dual RF frequencies are provided herein. In some embodiments, a method of processing a substrate includes forming a plasma of a polymer forming chemistry to etch a feature into a substrate disposed on a substrate support in a process chamber while depositing a polymer on at least portions of the feature being etched. A low frequency and a high frequency RF signal are applied to an electrode disposed in the substrate support. The method further includes controlling the level of polymer formation on the substrate, wherein controlling the level of polymer formation comprises adjusting a power ratio of the high frequency to the low frequency RF signal.
摘要翻译：本文提供了使用双RF频率处理处理室中的衬底的方法。在一些实施例中，处理衬底的方法包括形成形成化学的聚合物的等离子体，以将特征蚀刻到设置在处理室中的衬底支撑件上的衬底中，同时在被蚀刻的特征的至少部分上沉积聚合物。将低频和高频RF信号施加到设置在基板支架中的电极。该方法还包括控制在基底上聚合物形成的水平，其中控制聚合物形成的水平包括调整高频与低频RF信号的功率比。

10. 发明申请

US20090142859A1 PLASMA CONTROL USING DUAL CATHODE FREQUENCY MIXING 失效
标题翻译：使用双阴极频率混合的等离子体控制
公开(公告)号：US20090142859A1
公开(公告)日：2009-06-04
申请号：US11947663
申请日：2007-11-29
申请人： JINGBAO LIU , Taeho Shin , Bryan Y. Pu
发明人： JINGBAO LIU , Taeho Shin , Bryan Y. Pu
IPC分类号： H01L21/66 , H01L21/3065 , H01L21/00
CPC分类号： H01J37/32165 , H01J37/32091 , H01L21/31116 , H01L21/31144 , H01L21/67069 , H01L22/20
摘要： Methods for processing a substrate in a processing chamber using dual RF frequencies are provided herein. In some embodiments, a method of processing a substrate includes forming a plasma of a polymer forming chemistry to etch a feature into a substrate disposed on a substrate support in a process chamber while depositing a polymer on at least portions of the feature being etched. A low frequency and a high frequency RF signal are applied to an electrode disposed in the substrate support. The method further includes controlling the level of polymer formation on the substrate, wherein controlling the level of polymer formation comprises adjusting a power ratio of the high frequency to the low frequency RF signal.
摘要翻译：本文提供了使用双RF频率处理处理室中的衬底的方法。在一些实施例中，处理衬底的方法包括形成形成化学物质的聚合物的等离子体，以将特征蚀刻到设置在处理室中的衬底支撑体上的衬底中，同时在被蚀刻的特征的至少部分上沉积聚合物。将低频和高频RF信号施加到设置在基板支架中的电极。该方法还包括控制在基底上聚合物形成的水平，其中控制聚合物形成的水平包括调整高频与低频RF信号的功率比。

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