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1. 发明授权

US09637838B2 Methods of manufacturing synthetic diamond material by microwave plasma enhanced chemical vapor deposition from a microwave generator and gas inlet(s) disposed opposite the growth surface area 有权
公开(公告)号：US09637838B2
公开(公告)日：2017-05-02
申请号：US13994922
申请日：2011-12-14
申请人： Steven Edward Coe , Jonathan James Wilman , Helen Wilman , Daniel James Twitchen , Geoffrey Alan Scarsbrook , John Robert Brandon , Christopher John Howard Wort , Matthew Lee Markham
发明人： Steven Edward Coe , Jonathan James Wilman , Daniel James Twitchen , Geoffrey Alan Scarsbrook , John Robert Brandon , Christopher John Howard Wort , Matthew Lee Markham
IPC分类号： C30B25/14 , C01B31/06 , C23C16/27 , C30B29/04 , H01J37/32 , C30B25/02 , C30B25/16
CPC分类号： C30B25/14 , C01B32/25 , C23C16/274 , C23C16/278 , C30B25/02 , C30B25/165 , C30B29/04 , H01J37/32192 , H01J37/32449
摘要： Disclosed herein are methods of manufacturing synthetic CVD diamond material including orienting and controlling process gas flow in a microwave plasma reactor to improve performance. The microwave plasma reactor includes a gas flow system with a gas inlet comprising one or more gas inlet nozzles disposed opposite the growth surface area and configured to inject process gases towards the growth surface area. The method comprises injecting process gases towards the growth surface area at a total gas flow rate equal to or greater than 500 standard cm3 per minute wherein the process gases are injected into the plasma chamber through the one or more gas inlet nozzles with a Reynolds number in a range 1 to 100.

2. 发明授权

US11371147B2 Microwave plasma reactor for manufacturing synthetic diamond material 有权
公开(公告)号：US11371147B2
公开(公告)日：2022-06-28
申请号：US13994903
申请日：2011-12-14
申请人： Steven Edward Coe , Jonathan James Wilman , Daniel James Twitchen , Geoffrey Alan Scarsbrook , John Robert Brandon , Christopher John Howard Wort
发明人： Steven Edward Coe , Jonathan James Wilman , Daniel James Twitchen , Geoffrey Alan Scarsbrook , John Robert Brandon , Christopher John Howard Wort
IPC分类号： C23C16/27 , C23C16/455 , C23C16/511 , H01J37/32 , C30B29/04 , C30B25/10
摘要： A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor includes a plasma chamber, a substrate holder, a microwave coupling configuration for feeding microwaves into the plasma chamber, and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom. The gas flow system includes a gas inlet array having a plurality of gas inlets for directing the process gases towards the substrate holder. The gas inlet array includes at least six gas inlets disposed in a substantially parallel or divergent orientation relative to a central axis of the plasma chamber.

3. 发明申请

US20150030786A1 MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATERIAL 审中-公开
标题翻译：用于制造合成金刚石材料的微波等离子体反应器
公开(公告)号：US20150030786A1
公开(公告)日：2015-01-29
申请号：US13994903
申请日：2011-12-14
申请人： Steven Edward Coe , Jonathan James Wilman , Daniel James Twitchen , Geoffrey Alan Scarsbrook , John Robert Brandon , Christopher John Howard Wort
发明人： Steven Edward Coe , Jonathan James Wilman , Daniel James Twitchen , Geoffrey Alan Scarsbrook , John Robert Brandon , Christopher John Howard Wort
IPC分类号： C23C16/455 , C23C16/511 , C23C16/27
CPC分类号： C23C16/45563 , C23C16/274 , C23C16/45504 , C23C16/45565 , C23C16/511 , C30B25/105 , C30B29/04 , H01J37/32192 , H01J37/32238 , H01J37/3244 , H01J37/32449
摘要： A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber; a substrate holder disposed in the plasma chamber for supporting a substrate on which the synthetic diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; wherein the gas flow system comprises a gas inlet nozzle array comprising a plurality of gas inlet nozzles disposed opposite the substrate holder for directing process gases towards the substrate holder, the gas inlet nozzle array comprising: at least six gas inlet nozzles disposed in a substantially parallel or divergent orientation relative to a central axis of the plasma chamber; a gas inlet nozzle number density equal to or greater than 0.1 nozzles/cm2, wherein the gas inlet nozzle number density is measured by projecting the nozzles onto a plane whose normal lies parallel to the central axis of the plasma chamber and measuring the gas inlet number density on said plane; and a nozzle area ratio of equal to or greater than 10, wherein the nozzle area ratio is measured by projecting the nozzles onto a plane whose normal lies parallel to the central axis of the plasma chamber, measuring the total area of the gas inlet nozzle area on said plane, dividing by the total number of nozzles to give an area associated with each nozzle, and dividing the area associated with each nozzle by an actual area of each nozzle.
摘要翻译：一种通过化学气相沉积制造合成金刚石材料的微波等离子体反应器，所述微波等离子体反应器包括：等离子体室; 设置在等离子体室中的衬底保持器，用于支撑在使用中沉积合成金刚石材料的衬底; 用于将微波从微波发生器馈入等离子体室的微波耦合配置; 以及用于将工艺气体进料到等离子体室中并从中除去它们的气体流动系统; 其中所述气体流动系统包括气体入口喷嘴阵列，所述气体入口喷嘴阵列包括与所述衬底保持器相对设置的多个气体入口喷嘴，用于将工艺气体引向所述衬底保持器，所述气体入口喷嘴阵列包括：至少六个气体入口喷嘴，或相对于等离子体室的中心轴线的发散取向; 气体入口喷嘴数密度等于或大于0.1喷嘴/ cm2，其中气体入口喷嘴数密度通过将喷嘴投影到平行于等离子体室的中心轴线的平面上并测量气体入口数所述平面上的密度; 并且喷嘴面积比等于或大于10，其中通过将喷嘴投影到平行于等离子体室的中心轴的平面的平面上来测量喷嘴面积比，测量气体入口喷嘴面积的总面积在所述平面上除以总喷嘴数量以给出与每个喷嘴相关联的区域，并且将与每个喷嘴相关联的区域除以每个喷嘴的实际面积。

4. 发明授权

US09410242B2 Microwave plasma reactor for manufacturing synthetic diamond material 有权
标题翻译：用于制造合成金刚石材料的微波等离子体反应器
公开(公告)号：US09410242B2
公开(公告)日：2016-08-09
申请号：US13980452
申请日：2011-12-14
申请人： Geoffrey Alan Scarsbrook , Jonathan James Wilman , Helen Wilman , Joseph Michael Dodson , John Robert Brandon , Steven Edward Coe , Christopher John Howard Wort
发明人： Geoffrey Alan Scarsbrook , Jonathan James Wilman , Joseph Michael Dodson , John Robert Brandon , Steven Edward Coe , Christopher John Howard Wort
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , C23C16/27 , C23C16/511 , C30B25/10 , C30B29/04 , H01J37/32 , C01B31/06
CPC分类号： C23C16/274 , C01B32/25 , C23C16/511 , C30B25/105 , C30B29/04 , H01J37/32192 , H01J37/32642 , H01J2237/339
摘要： A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use; a microwave coupling configuration for feeding microwaves from a microwave generator into the plasma chamber; and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; wherein the microwave plasma reactor further comprises an electrically conductive plasma stabilizing annulus disposed around the substrate holder within the plasma chamber.
摘要翻译：一种用于通过化学气相沉积制造合成金刚石材料的微波等离子体反应器，所述微波等离子体反应器包括：等离子体室; 衬底保持器，其设置在所述等离子体室中，并且包括支撑表面，所述支撑表面用于支撑在其上沉积合成金刚石材料的基底; 用于将微波从微波发生器馈入等离子体室的微波耦合配置; 以及用于将工艺气体进料到等离子体室中并从中除去它们的气体流动系统; 其中微波等离子体反应器还包括设置在等离子体室内的衬底保持器周围的导电等离子体稳定环。

5. 发明授权

US10403477B2 Microwave plasma reactor for manufacturing synthetic diamond material 有权
公开(公告)号：US10403477B2
公开(公告)日：2019-09-03
申请号：US13994880
申请日：2011-12-14
申请人： John Robert Brandon , Alexander Lamb Cullen , Stephen David Williams , Joseph Michael Dodson , Helen Wilman , Christopher John Howard Wort
发明人： John Robert Brandon , Alexander Lamb Cullen , Stephen David Williams , Joseph Michael Dodson , Jonathan James Wilman , Christopher John Howard Wort
IPC分类号： H01J37/32 , C23C16/27 , C23C16/511
摘要： A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapor deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode, wherein the resonance cavity has a central rotational axis of symmetry extending from the base to the top plate, and wherein the top plate is mounted across said central rotational axis of symmetry; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use; wherein the resonance cavity is configured to have a height, as measured from the base to the top plate of the plasma chamber, which supports a TM011 resonant mode between the base and the top plate at said frequency f, and wherein the resonance cavity is further configured to have a diameter, as measured at a height less than 50% of the height of the resonance cavity as measured from the base, which satisfies the condition that a ratio of the resonance cavity height/the resonance cavity diameter is in the range 0.3 to 1.0.

6. 发明申请

US20120312682A1 SOLID ELECTRODE 审中-公开
标题翻译：固体电极
公开(公告)号：US20120312682A1
公开(公告)日：2012-12-13
申请号：US13585000
申请日：2012-08-14
申请人： Jonathan James Wilman , Patrick Simon Bray , Timothy Peter Mollart
发明人： Jonathan James Wilman , Patrick Simon Bray , Timothy Peter Mollart
IPC分类号： C25B11/14 , C25B11/02 , C25B11/12
CPC分类号： C02F1/46109 , C02F1/4672 , C02F2001/46128 , C02F2001/46133 , C02F2001/46147 , C02F2103/343 , C02F2201/46115 , C25B11/12
摘要： The present invention provides a solid diamond electrode, a reactor, in particular a reactor comprising an anode, a cathode and at least one bipolar electrode having first and second major working surfaces positioned therebetween wherein the at least one bipolar electrode consists essentially of diamond, and methods in which the reactors are used.
摘要翻译：本发明提供一种固体金刚石电极，一种反应器，特别是一种包括阳极，阴极和至少一个双极电极的反应器，其中第一和第二主要工作表面位于其间，其中至少一个双极电极基本上由金刚石和使用反应器的方法。

7. 发明申请

US20100126879A1 Solid Electrode 有权
标题翻译：固体电极
公开(公告)号：US20100126879A1
公开(公告)日：2010-05-27
申请号：US12439854
申请日：2007-09-05
申请人： Jonathan James Wilman , Patrick Simon Bray , Timothy Peter Mollart
发明人： Jonathan James Wilman , Patrick Simon Bray , Timothy Peter Mollart
IPC分类号： C02F1/461 , C25B11/12
CPC分类号： C02F1/46109 , C02F1/4672 , C02F2001/46128 , C02F2001/46133 , C02F2001/46147 , C02F2103/343 , C02F2201/46115 , C25B11/12
摘要： The present invention provides a solid diamond electrode, a reactor, in particular a reactor comprising an anode, a cathode and at least one bipolar electrode having first and second major working surfaces positioned therebetween wherein the at least one bipolar electrode consists essentially of diamond, and methods in which the reactors are used.
摘要翻译：本发明提供一种固体金刚石电极，一种反应器，特别是一种包括阳极，阴极和至少一个双极电极的反应器，其中第一和第二主要工作表面位于其间，其中至少一个双极电极基本上由金刚石和使用反应器的方法。

8. 发明授权

US08273225B2 Solid electrode 有权
标题翻译：固体电极
公开(公告)号：US08273225B2
公开(公告)日：2012-09-25
申请号：US12439854
申请日：2007-09-05
申请人： Jonathan James Wilman , Patrick Simon Bray , Timothy Peter Mollart
发明人： Jonathan James Wilman , Patrick Simon Bray , Timothy Peter Mollart
IPC分类号： C25B9/06 , G01N25/20 , G01N27/26
CPC分类号： C02F1/46109 , C02F1/4672 , C02F2001/46128 , C02F2001/46133 , C02F2001/46147 , C02F2103/343 , C02F2201/46115 , C25B11/12
摘要： The present invention provides a solid diamond electrode, a reactor, in particular a reactor comprising an anode, a cathode and at least one bipolar electrode having first and second major working surfaces positioned therebetween wherein the at least one bipolar electrode consists essentially of diamond, and methods in which the reactors are used.
摘要翻译：本发明提供一种固体金刚石电极，一种反应器，特别是一种包括阳极，阴极和至少一个双极电极的反应器，其中第一和第二主要工作表面位于其间，其中至少一个双极电极基本上由金刚石和使用反应器的方法。

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