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1. 发明授权

US10403477B2 Microwave plasma reactor for manufacturing synthetic diamond material 有权
公开(公告)号：US10403477B2
公开(公告)日：2019-09-03
申请号：US13994880
申请日：2011-12-14
申请人： John Robert Brandon , Alexander Lamb Cullen , Stephen David Williams , Joseph Michael Dodson , Helen Wilman , Christopher John Howard Wort
发明人： John Robert Brandon , Alexander Lamb Cullen , Stephen David Williams , Joseph Michael Dodson , Jonathan James Wilman , Christopher John Howard Wort
IPC分类号： H01J37/32 , C23C16/27 , C23C16/511
摘要： A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapor deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode, wherein the resonance cavity has a central rotational axis of symmetry extending from the base to the top plate, and wherein the top plate is mounted across said central rotational axis of symmetry; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use; wherein the resonance cavity is configured to have a height, as measured from the base to the top plate of the plasma chamber, which supports a TM011 resonant mode between the base and the top plate at said frequency f, and wherein the resonance cavity is further configured to have a diameter, as measured at a height less than 50% of the height of the resonance cavity as measured from the base, which satisfies the condition that a ratio of the resonance cavity height/the resonance cavity diameter is in the range 0.3 to 1.0.

2. 发明授权

US08955456B2 Microwave plasma reactor for manufacturing synthetic diamond material 有权
标题翻译：用于制造合成金刚石材料的微波等离子体反应器
公开(公告)号：US08955456B2
公开(公告)日：2015-02-17
申请号：US13994836
申请日：2011-12-14
申请人： Alexander Lamb Cullen , Joseph Michael Dodson , Stephen David Williams , John Robert Brandon
发明人： Alexander Lamb Cullen , Joseph Michael Dodson , Stephen David Williams , John Robert Brandon
IPC分类号： H01J37/00 , H01J37/32 , C23C16/27 , C23C16/511 , C23C16/00
CPC分类号： H01J37/32238 , C23C16/274 , C23C16/511 , H01J37/32009 , H01J37/32192 , H01J37/32211 , H01J37/32229 , H01J37/32266 , H01J37/3244 , H01J2237/3321
摘要： A microwave plasma reactor for manufacturing a synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber (2); a substrate holder (4) disposed in the plasma chamber for supporting a substrate on which the synthetic diamond material is to be deposited in use; a microwave coupling configuration (12) for feeding microwaves from a microwave generator (8) into the plasma chamber; and a gas flow system (13,16) for feeding process gases into the plasma chamber and removing them therefrom, wherein the microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber comprises: an annular dielectric window (18) formed in one or several sections; a coaxial waveguide (14) having a central inner conductor (20) and an outer conductor (22) for feeding microwaves to the annular dielectric window; and a waveguide plate (24) comprising a plurality of apertures (28) disposed in an annular configuration with a plurality of arms (26) extending between the apertures, each aperture forming a waveguide for coupling microwaves towards the plasma chamber.
摘要翻译：一种用于通过化学气相沉积制造合成金刚石材料的微波等离子体反应器，所述微波等离子体反应器包括：等离子体室（2）; 设置在等离子体室中的衬底保持器（4），用于支撑在使用中沉积合成金刚石材料的衬底; 用于将微波从微波发生器（8）馈入等离子体室的微波耦合配置（12）; 以及用于将工艺气体进料到等离子体室中并将其从中除去的气体流动系统（13,16），其中用于将来自微波发生器的微波馈送到等离子体室中的微波耦合结构包括：环形介质窗（18），其形成在一个或几个部分; 具有中心内部导体（20）和外部导体（22）的同轴波导（14），用于将微波馈送到环形电介质窗口; 以及波导板（24），其包括以环形构造设置的多个孔（28），所述孔具有在孔之间延伸的多个臂（26），每个孔形成用于将微波耦合到等离子体室的波导。

3. 发明申请

US20140308461A1 MICROWAVE PLASMA REACTOR FOR MANUFACTURING SYNTHETIC DIAMOND MATERIAL 有权
标题翻译：用于制造合成金刚石材料的微波等离子体反应器
公开(公告)号：US20140308461A1
公开(公告)日：2014-10-16
申请号：US13994836
申请日：2011-12-14
申请人： Alexander Lamb Cullen , Joseph Michael Dodson , Stephen David Williams , John Robert Brandon
发明人： Alexander Lamb Cullen , Joseph Michael Dodson , Stephen David Williams , John Robert Brandon
IPC分类号： H01J37/32 , C23C16/27
CPC分类号： H01J37/32238 , C23C16/274 , C23C16/511 , H01J37/32009 , H01J37/32192 , H01J37/32211 , H01J37/32229 , H01J37/32266 , H01J37/3244 , H01J2237/3321
摘要： A microwave plasma reactor for manufacturing a synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber (2); a substrate holder (4) disposed in the plasma chamber for supporting a substrate on which the synthetic diamond material is to be deposited in use; a microwave coupling configuration (12) for feeding microwaves from a microwave generator (8) into the plasma chamber; and a gas flow system (13,16) for feeding process gases into the plasma chamber and removing them therefrom, wherein the microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber comprises: an annular dielectric window (18) formed in one or several sections; a coaxial waveguide (14) having a central inner conductor (20) and an outer conductor (22) for feeding microwaves to the annular dielectric window; and a waveguide plate (24) comprising a plurality of apertures (28) disposed in an annular configuration with a plurality of arms (26) extending between the apertures, each aperture forming a waveguide for coupling microwaves towards the plasma chamber.
摘要翻译：一种用于通过化学气相沉积制造合成金刚石材料的微波等离子体反应器，所述微波等离子体反应器包括：等离子体室（2）; 设置在等离子体室中的衬底保持器（4），用于支撑在使用中沉积合成金刚石材料的衬底; 用于将微波从微波发生器（8）馈入等离子体室的微波耦合配置（12）; 以及用于将工艺气体进料到等离子体室中并将其从中除去的气体流动系统（13,16），其中用于将来自微波发生器的微波馈送到等离子体室中的微波耦合结构包括：环形介质窗（18），其形成在一个或几个部分; 具有中心内部导体（20）和外部导体（22）的同轴波导（14），用于将微波馈送到环形电介质窗口; 以及波导板（24），其包括以环形构造设置的多个孔（28），其中在所述孔之间延伸有多个臂（26），每个孔形成用于将微波耦合到所述等离子体室的波导。

4. 发明授权

US08859058B2 Microwave plasma reactors and substrates for synthetic diamond manufacture 有权
标题翻译：微波等离子体反应器和合成金刚石制造用基材
公开(公告)号：US08859058B2
公开(公告)日：2014-10-14
申请号：US13994813
申请日：2011-12-14
申请人： Carlton Nigel Dodge , Paul Nicolas Inglis , Geoffrey Alan Scarsbrook , Timothy Peter Mollart , Charles Simon James Pickles , Steven Edward Coe , Joseph Michael Dodson , Alexander Lamb Cullen , John Robert Brandon , Christopher John Howard Wort
发明人： Carlton Nigel Dodge , Paul Nicolas Inglis , Geoffrey Alan Scarsbrook , Timothy Peter Mollart , Charles Simon James Pickles , Steven Edward Coe , Joseph Michael Dodson , Alexander Lamb Cullen , John Robert Brandon , Christopher John Howard Wort
IPC分类号： C23C16/00 , C23C16/27 , C23C16/52 , C23C16/511
CPC分类号： C23C16/274 , C01B32/25 , C23C16/4586 , C23C16/511 , C23C16/52 , C23C16/56 , C30B25/105 , C30B29/04 , H01J37/32192 , H01J37/32284 , Y10T428/12993
摘要： A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapor deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode between the base and the top plate; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate; and a substrate disposed on the supporting surface, the substrate having a growth surface on which the synthetic diamond material is to be deposited in use, wherein the substrate dimensions and location within the resonance cavity are selected to generate a localized axisymmetric Ez electric field profile across the growth surface in use, the localized axisymmetric Ez electric field profile comprising a substantially flat central portion bound by a ring of higher electric field, the substantially flat central portion extending over at least 60% of an area of the growth surface of the substrate and having an Ez electric field variation of no more than ±10% of a central Ez electric field strength, the ring of higher electric field being disposed around the central portion and having a peak Ez electric field strength in a range 10% to 50% higher than the central Ez electric field strength.
摘要翻译：一种用于通过化学气相沉积制造合成金刚石材料的微波等离子体反应器，所述微波等离子体反应器包括：微波发生器，其被配置为以频率f产生微波; 等离子体室，其包括基底，顶板和从所述底座延伸到所述顶板的侧壁，所述侧壁限定用于在所述基底和所述顶板之间支撑微波共振模式的共振腔; 用于将微波从微波发生器馈送到等离子体室中的微波耦合配置; 用于将工艺气体进料到等离子体室中并从中除去它们的气体流动系统; 衬底保持器，其设置在所述等离子体室中并且包括用于支撑衬底的支撑表面; 以及设置在所述支撑表面上的基板，所述基板具有生长表面，所述合成金刚石材料将在其上沉积在所述生长表面上，其中所述共振腔内的所述基板尺寸和位置被选择以产生局部轴对称Ez电场分布在使用中的生长表面，局部轴对称Ez电场分布包括由较高电场环结合的基本上平坦的中心部分，基本上平坦的中心部分延伸至衬底的生长表面的至少60％的面积; 具有不大于中心Ez电场强度的±10％的Ez电场变化，较高电场的环设置在中心部分周围，并且具有10％至50％以上范围内的峰值Ez电场强度比中央Ez电场强度高。

5. 发明申请

US20140234556A1 MICROWAVE PLASMA REACTORS AND SUBSTRATES FOR SYNTHETIC DIAMOND MANUFACTURE 有权
标题翻译： MICROWAVE等离子体反应器和合成金刚石制造基材
公开(公告)号：US20140234556A1
公开(公告)日：2014-08-21
申请号：US13994813
申请日：2011-12-14
申请人： Carlton Nigel Dodge , Paul Nicolas Inglis , Geoffrey Alan Scarsbrook , Timothy Peter Mollart , Charles Simon James Pickles , Steven Edward Coe , Joseph Michael Dodson , Alexander Lamb Cullen , John Robert Brandon , Christopher John Howard Wort
发明人： Carlton Nigel Dodge , Paul Nicolas Inglis , Geoffrey Alan Scarsbrook , Timothy Peter Mollart , Charles Simon James Pickles , Steven Edward Coe , Joseph Michael Dodson , Alexander Lamb Cullen , John Robert Brandon , Christopher John Howard Wort
IPC分类号： C23C16/27 , C23C16/52 , C23C16/511
CPC分类号： C23C16/274 , C01B32/25 , C23C16/4586 , C23C16/511 , C23C16/52 , C23C16/56 , C30B25/105 , C30B29/04 , H01J37/32192 , H01J37/32284 , Y10T428/12993
摘要： A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a microwave generator configured to generate microwaves at a frequency f; a plasma chamber comprising a base, a top plate, and a side wall extending from said base to said top plate defining a resonance cavity for supporting a microwave resonance mode between the base and the top plate; a microwave coupling configuration for feeding microwaves from the microwave generator into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate; and a substrate disposed on the supporting surface, the substrate having a growth surface on which the synthetic diamond material is to be deposited in use, wherein the substrate dimensions and location within the resonance cavity are selected to generate a localized axisymmetric Ez electric field profile across the growth surface in use, the localized axisymmetric Ez electric field profile comprising a substantially flat central portion bound by a ring of higher electric field, the substantially flat central portion extending over at least 60% of an area of the growth surface of the substrate and having an Ez electric field variation of no more than ±10% of a central Ez electric field strength, the ring of higher electric field being disposed around the central portion and having a peak Ez electric field strength in a range 10% to 50% higher than the central Ez electric field strength.
摘要翻译：一种用于通过化学气相沉积制造合成金刚石材料的微波等离子体反应器，所述微波等离子体反应器包括：微波发生器，其被配置为以频率f产生微波; 等离子体室，其包括基底，顶板和从所述底座延伸到所述顶板的侧壁，所述侧壁限定用于在所述基底和所述顶板之间支撑微波共振模式的共振腔; 用于将微波从微波发生器馈送到等离子体室中的微波耦合配置; 用于将工艺气体进料到等离子体室中并从中除去它们的气体流动系统; 衬底保持器，其设置在所述等离子体室中并且包括用于支撑衬底的支撑表面; 以及设置在所述支撑表面上的基板，所述基板具有生长表面，所述合成金刚石材料将在其上沉积在所述生长表面上，其中所述共振腔内的所述基板尺寸和位置被选择以产生局部轴对称Ez电场分布在使用中的生长表面，局部轴对称Ez电场分布包括由较高电场环结合的基本上平坦的中心部分，基本上平坦的中心部分延伸至衬底的生长表面的至少60％的面积; 具有不大于中心Ez电场强度的±10％的Ez电场变化，较高电场的环设置在中心部分周围，并且具有10％至50％以上范围内的峰值Ez电场强度比中央Ez电场强度高。

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