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1. 发明申请

US20070018183A1 Roughened high refractive index layer/LED for high light extraction 有权
$Roughened high refractive index layer/LED for high light extraction$
标题翻译：用于高光提取的粗化高折射率层/ LED
公开(公告)号：US20070018183A1
公开(公告)日：2007-01-25
申请号：US11187075
申请日：2005-07-21
申请人： Steven Denbaars , James Ibbetson , Shuji Nakamura
发明人： Steven Denbaars , James Ibbetson , Shuji Nakamura
IPC分类号： H01L33/00 , H01L29/22
CPC分类号： H01L33/22 , H01L33/007 , H01L33/0079 , H01L33/42
摘要： A light emitting diode (LED) includes a p-type layer of material, an n-type layer of material and an active layer between the p-type layer and the n-type layer. A roughened layer of transparent material is adjacent one of the p-type layer of material and the n-type layer of material. The roughened layer of transparent material has a refractive index close to or substantially the same as the refractive index of the material adjacent the layer of transparent material, and may be a transparent oxide material or a transparent conducting material. An additional layer of conductive material may be between the roughened layer and the n-type or p-type layer.
摘要翻译：发光二极管（LED）包括p型层材料，n型层材料和p型层与n型层之间的有源层。透明材料的粗糙层与p型材料层和n型材料层相邻。透明材料的粗糙层具有接近或基本上等于与透明材料层相邻的材料的折射率的折射率，并且可以是透明氧化物材料或透明导电材料。附加的导电材料层可以在粗糙层和n型或p型层之间。

2. 发明授权

US08674375B2 Roughened high refractive index layer/LED for high light extraction 有权
$Roughened high refractive index layer/LED for high light extraction$
标题翻译：用于高光提取的粗化高折射率层/ LED
公开(公告)号：US08674375B2
公开(公告)日：2014-03-18
申请号：US11187075
申请日：2005-07-21
申请人： Steven P. Denbaars , James Ibbetson , Shuji Nakamura
发明人： Steven P. Denbaars , James Ibbetson , Shuji Nakamura
IPC分类号： H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00
CPC分类号： H01L33/22 , H01L33/007 , H01L33/0079 , H01L33/42
摘要： A light emitting diode (LED) includes a p-type layer of material, an n-type layer of material and an active layer between the p-type layer and the n-type layer. A roughened layer of transparent material is adjacent one of the p-type layer of material and the n-type layer of material. The roughened layer of transparent material has a refractive index close to or substantially the same as the refractive index of the material adjacent the layer of transparent material, and may be a transparent oxide material or a transparent conducting material. An additional layer of conductive material may be between the roughened layer and the n-type or p-type layer.
摘要翻译：发光二极管（LED）包括p型层材料，n型层材料和p型层与n型层之间的有源层。透明材料的粗糙层与p型材料层和n型材料层相邻。透明材料的粗糙层具有接近或基本上等于与透明材料层相邻的材料的折射率的折射率，并且可以是透明氧化物材料或透明导电材料。附加的导电材料层可以在粗糙层和n型或p型层之间。

3. 发明授权

US09159888B2 Wafer level phosphor coating method and devices fabricated utilizing method 有权
标题翻译：晶圆级荧光粉涂布方法及利用方法制造的器件
公开(公告)号：US09159888B2
公开(公告)日：2015-10-13
申请号：US11899790
申请日：2007-09-07
申请人： Ashay Chitnis , James Ibbetson , Bernd Keller , David T. Emerson , John Edmond , Michael J. Bergmann , Jasper S. Cabalu , Jeffrey C. Britt , Arpan Chakraborty , Eric Tarsa , Yankun Fu
发明人： Ashay Chitnis , James Ibbetson , Bernd Keller , David T. Emerson , John Edmond , Michael J. Bergmann , Jasper S. Cabalu , Jeffrey C. Britt , Arpan Chakraborty , Eric Tarsa , James Seruto , Yankun Fu
IPC分类号： H01L33/00 , H01L33/50 , H01L33/62 , H01L33/38 , H01L33/36 , H01L33/44 , H01L33/54
CPC分类号： H01L33/508 , H01L33/0095 , H01L33/36 , H01L33/387 , H01L33/44 , H01L33/505 , H01L33/54 , H01L33/62 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.
摘要翻译：制造发光二极管（LED）芯片的方法包括通常在衬底上提供多个LED。基座沉积在LED上，每个基座与其中一个LED电接触。在LED上形成涂层，其中涂层埋入至少一些基座。然后将涂层平坦化以暴露至少一些埋置的基座，同时在所述LED上留下至少一些所述涂层。然后可以例如通过引线接合露出的基座。本发明公开了用于制造LED芯片的类似方法，所述LED芯片具有倒装芯片接合在载体基板上并用于制造其它半导体器件的LED。还公开了使用所公开的方法制造的LED芯片晶片和LED芯片。

4. 发明授权

US09093616B2 Molded chip fabrication method and apparatus 有权
标题翻译：成型芯片制造方法和装置
公开(公告)号：US09093616B2
公开(公告)日：2015-07-28
申请号：US13072371
申请日：2011-03-25
申请人： Michael S. Leung , Eric J. Tarsa , James Ibbetson
发明人： Michael S. Leung , Eric J. Tarsa , James Ibbetson
IPC分类号： H01L33/44 , H01L33/50 , H01L21/56 , H01L23/00 , H01L27/15
CPC分类号： H01L33/504 , H01L21/565 , H01L24/96 , H01L27/15 , H01L33/50 , H01L2224/2518 , H01L2924/12041 , H01L2924/181 , H01L2924/1815 , H01L2933/0041 , H01L2924/00
摘要： A method and apparatus for coating a plurality of semiconductor devices that is particularly adapted to coating LEDs with a coating material containing conversion particles. One method according to the invention comprises providing a mold with a formation cavity. A plurality of semiconductor devices are mounted within the mold formation cavity and a curable coating material is injected or otherwise introduced into the mold to fill the mold formation cavity and at least partially cover the semiconductor devices. The coating material is cured so that the semiconductor devices are at least partially embedded in the cured coating material. The cured coating material with the embedded semiconductor devices is removed from the formation cavity. The semiconductor devices are separated so that each is at least partially covered by a layer of the cured coating material. One embodiment of an apparatus according to the invention for coating a plurality of semiconductor devices comprises a mold housing having a formation cavity arranged to hold semiconductor devices. The formation cavity is also arranged so that a curable coating material can be injected into and fills the formation cavity to at least partially covering the semiconductor devices.
摘要翻译：一种用于涂覆多个半导体器件的方法和设备，其特别适用于涂覆含有转化颗粒的涂层材料的LED。根据本发明的一种方法包括提供具有地层腔的模具。多个半导体器件安装在模具形成腔内，并且可固化涂层材料被注入或以其它方式被引入到模具中以填充模具形成腔并且至少部分地覆盖半导体器件。固化涂层材料，使得半导体器件至少部分地嵌入固化的涂层材料中。具有嵌入式半导体器件的固化的涂层材料从形成腔中移除。半导体器件被分离成使得每个半导体器件至少部分被固化的涂层材料层覆盖。根据本发明的用于涂覆多个半导体器件的设备的一个实施例包括具有布置成保持半导体器件的形成空腔的模具外壳。形成空腔也被布置成使得可固化的涂层材料可以注入并填充地层腔以至少部分地覆盖半导体器件。

5. 发明授权

US08476668B2 High voltage low current surface emitting LED 有权
标题翻译：高压低电流表面发光LED
公开(公告)号：US08476668B2
公开(公告)日：2013-07-02
申请号：US12814241
申请日：2010-06-11
申请人： James Ibbetson , Sten Heikman
发明人： James Ibbetson , Sten Heikman
IPC分类号： H01L33/64 , H01L29/06
CPC分类号： H01L25/0753 , H01L33/62 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： An LED chip comprising a plurality of sub-LEDs on a submount. Electrically conductive and electrically insulating features are included that serially interconnect the sub-LEDs such that an electrical signal applied to the serially interconnected sub-LEDs along the electrically conductive features spreads to the serially interconnected sub-LEDs. A via is included that is arranged to electrically couple one of the sub-LEDs to the submount. The sub-LEDs can be interconnected by more than one of the conductive features, with each one of the conductive features capable of spreading an electrical signal between two of the sub-LEDs.
摘要翻译：一种LED芯片，包括在底座上的多个子LED。包括导电和电绝缘特征，其将子LED串联连接，使得沿着导电特征施加到串联的子LED的电信号扩展到串联的子LED。包括通孔，其布置成将子LED中的一个电耦合到基座。子LED可以由多于一个的导电特征相互连接，其中每个导电特征能够在两个子LED之间扩展电信号。

6. 发明授权

US08436371B2 Microscale optoelectronic device packages 有权
标题翻译：微尺度光电器件封装
公开(公告)号：US08436371B2
公开(公告)日：2013-05-07
申请号：US11753483
申请日：2007-05-24
申请人： Nicholas W. Medendorp, Jr. , James Ibbetson
发明人： Nicholas W. Medendorp, Jr. , James Ibbetson
IPC分类号： H01L29/02
CPC分类号： H01L25/167 , H01L33/486 , H01L2224/48227 , H01L2224/48465 , H01L2224/8592 , H01L2924/19107 , H01S5/0206 , H01S5/06825 , H01L2924/00012 , H01L2924/00
摘要： An optoelectronic device article comprises a substrate containing at least one electrically conductive microvia, at least one emitter diode and at least one ESD diode, optionally formed in situ, disposed in or on the substrate, and an electrically conductive path between the foregoing elements. A reflector cavity may be defined in the substrate for receiving the emitter diode(s), with retention elements on the substrate used to retain a lens material. High flux density and high emitter diode spatial density may be attained. Thermal sensors, radiation sensors, and integral heat spreaders comprising one or more protruding fins may be integrated into the article.
摘要翻译：光电子器件制品包括一个衬底，该衬底包含至少一个导电微孔，至少一个发射极二极管和至少一个ESD二极管，可选择地原位地形成在衬底中或衬底上，以及前述元件之间的导电路径。可以在衬底中限定反射器腔，用于接收发射极二极管，衬底上的保持元件用于保持透镜材料。可以获得高通量密度和高发射极二极管空间密度。包括一个或多个突出翅片的热传感器，辐射传感器和整体散热器可以被整合到制品中。

7. 发明申请

US20120280263A1 COMPOSITE HIGH REFLECTIVITY LAYER 有权
标题翻译：复合高反射层
公开(公告)号：US20120280263A1
公开(公告)日：2012-11-08
申请号：US13415626
申请日：2012-03-08
申请人： James Ibbetson , Ting Li , Bernd Keller
发明人： James Ibbetson , Ting Li , Bernd Keller
IPC分类号： H01L33/60 , H01L33/48
CPC分类号： H01L33/46 , G02B19/0028 , G02B19/0061 , H01L33/48 , H01L33/56 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014
摘要： A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED or package to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises a LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. One embodiment of a LED package comprises a LED mounted on a substrate with an encapsulant over said LED and a composite high reflectivity layer arranged to reflect emitted light. The composite layer comprises a plurality of layers such that at least one of said plurality of layers has an index of refraction lower than the encapsulant and a reflective layer on a side of said plurality of layers opposite the LED. In some embodiments, conductive vias are included through the composite layer to allow an electrical signal to pass through the layer to the LED.
摘要翻译：一种具有与所述LED或封装集成的复合高反射层的高效率发光二极管，以提高发射效率。发光二极管（LED）芯片的一个实施例包括LED和与LED成一体的复合高反射率层以反射从有源区域发射的光。 LED封装的一个实施例包括安装在具有在所述LED上的密封剂的衬底上的LED和布置成反射发射光的复合高反射率层。复合层包括多个层，使得所述多个层中的至少一个层具有低于密封剂的折射率和在与LED相对的所述多个层的一侧上的反射层。在一些实施例中，通过复合层包括导电通孔，以允许电信号通过该层到达LED。

8. 发明授权

US08138000B2 Methods for forming semiconductor light emitting devices and submounts 有权
标题翻译：用于形成半导体发光器件和底座的方法
公开(公告)号：US08138000B2
公开(公告)日：2012-03-20
申请号：US12397555
申请日：2009-03-04
申请人： Bernd Keller , James Ibbetson , Peter Andrews , Gerald H. Negley , Norbert Hiller
发明人： Bernd Keller , James Ibbetson , Peter Andrews , Gerald H. Negley , Norbert Hiller
IPC分类号： H01L21/00
CPC分类号： H01L33/507 , H01L25/167 , H01L2224/48091 , H01L2924/10253 , H01L2924/00014 , H01L2924/00
摘要： A submount for a semiconductor light emitting device includes a semiconductor substrate having a cavity therein configured to receive the light emitting device. A first bond pad is positioned in the cavity to couple to a first node of a light emitting device received in the cavity. A second bond pad is positioned in the cavity to couple to a second node of a light emitting device positioned therein. Light emitting devices including a solid wavelength conversion member and methods for forming the same are also provided.
摘要翻译：半导体发光器件的基座包括其中具有腔室的半导体衬底，其配置为接收发光器件。第一接合焊盘定位在空腔中以耦合到容纳在空腔中的发光器件的第一节点。第二接合焊盘定位在空腔中以耦合到定位在其中的发光器件的第二节点。还提供了包括固体波长转换元件的发光器件及其形成方法。

9. 发明申请

US20120049214A1 Monolithic Multi-Junction Light Emitting Devices Including Multiple Groups of Light Emitting Diodes 审中-公开
标题翻译：包括多组发光二极管的单片多功能发光器件
公开(公告)号：US20120049214A1
公开(公告)日：2012-03-01
申请号：US13190108
申请日：2011-07-25
申请人： Theodore D. Lowes , James Ibbetson , Sten Helkman , Tao Tong
发明人： Theodore D. Lowes , James Ibbetson , Sten Helkman , Tao Tong
IPC分类号： H01L33/08
CPC分类号： H01L25/0753 , H01L33/0079 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014
摘要： A packaged light emitting diode (LED) includes a submount, a monolithic multi-junction LED on the submount, and an encapsulant material on the monolithic multi-junction LED. The monolithic multi-junction LED includes a substrate, a plurality of sub-LEDs on the submount, a plurality of conductive metal interconnects coupled to the sub-LEDs and connecting the sub-LEDs in a predetermined arrangement including an anode contact and a cathode contact, and an electrostatic discharge protection circuit in the substrate and coupled in parallel with the arrangement of sub-LEDs.
摘要翻译：封装的发光二极管（LED）包括底座，底座上的单片多结LED以及单片多结LED上的密封剂材料。单片多结LED包括基板，在底座上的多个子LED，耦合到子LED的多个导电金属互连件并以包括阳极接触件和阴极接触件的预定布置连接子LED 以及基板中的静电放电保护电路，并且与子LED的布置并联连接。

10. 发明授权

US07863635B2 Semiconductor light emitting devices with applied wavelength conversion materials 有权
标题翻译：具有应用波长转换材料的半导体发光器件
公开(公告)号：US07863635B2
公开(公告)日：2011-01-04
申请号：US11835044
申请日：2007-08-07
申请人： Peter S. Andrews , Ronan P. Le Toquin , James Ibbetson
发明人： Peter S. Andrews , Ronan P. Le Toquin , James Ibbetson
IPC分类号： H01L33/00
CPC分类号： H01L33/508 , H01L33/20 , H01L33/504 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H01L2933/0091 , H01L2924/00014 , H01L2924/00012
摘要： A semiconductor structure includes an active region configured to emit light upon the application of a voltage thereto, a window layer configured to receive the light emitted by the active region, and a plurality of discrete phosphor-containing regions on the window layer and configured to receive light emitted by the active region and to convert at least a portion of the received light to a different wavelength than a wavelength of light emitted by the active region. Methods of forming a semiconductor structure including an active region configured to emit light and a window layer include forming a plurality of discrete phosphor-containing regions on the window layer.
摘要翻译：半导体结构包括被配置为在施加电压时发光的有源区，被配置为接收由有源区发射的光的窗口层和窗口层上的多个离散的含磷光体的区域，并且被配置为接收由有源区发射的光并将至少一部分接收的光转换成与由有源区发射的光的波长不同的波长。形成包括被配置为发光的有源区域和窗口层的半导体结构的方法包括在窗口层上形成多个离散的含磷光体区域。

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