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1. 发明申请

US20120280263A1 COMPOSITE HIGH REFLECTIVITY LAYER 有权
标题翻译：复合高反射层
公开(公告)号：US20120280263A1
公开(公告)日：2012-11-08
申请号：US13415626
申请日：2012-03-08
申请人： James Ibbetson , Ting Li , Bernd Keller
发明人： James Ibbetson , Ting Li , Bernd Keller
IPC分类号： H01L33/60 , H01L33/48
CPC分类号： H01L33/46 , G02B19/0028 , G02B19/0061 , H01L33/48 , H01L33/56 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014
摘要： A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED or package to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises a LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. One embodiment of a LED package comprises a LED mounted on a substrate with an encapsulant over said LED and a composite high reflectivity layer arranged to reflect emitted light. The composite layer comprises a plurality of layers such that at least one of said plurality of layers has an index of refraction lower than the encapsulant and a reflective layer on a side of said plurality of layers opposite the LED. In some embodiments, conductive vias are included through the composite layer to allow an electrical signal to pass through the layer to the LED.
摘要翻译：一种具有与所述LED或封装集成的复合高反射层的高效率发光二极管，以提高发射效率。发光二极管（LED）芯片的一个实施例包括LED和与LED成一体的复合高反射率层以反射从有源区域发射的光。 LED封装的一个实施例包括安装在具有在所述LED上的密封剂的衬底上的LED和布置成反射发射光的复合高反射率层。复合层包括多个层，使得所述多个层中的至少一个层具有低于密封剂的折射率和在与LED相对的所述多个层的一侧上的反射层。在一些实施例中，通过复合层包括导电通孔，以允许电信号通过该层到达LED。

2. 发明申请

US20050184307A1 LIGHT EMITTING DIODE WITH POROUS SIC SUBSTRATE AND METHOD FOR FABRICATING 有权
标题翻译：具有多孔SIC基板的发光二极管及其制造方法
公开(公告)号：US20050184307A1
公开(公告)日：2005-08-25
申请号：US10676953
申请日：2003-09-30
申请人： Ting Li , James Ibbetson , Bernd Keller
发明人： Ting Li , James Ibbetson , Bernd Keller
IPC分类号： H01L21/3063 , H01L31/0236 , H01L33/16 , H01L33/20 , H01L33/00
CPC分类号： H01L33/20 , H01L21/3063 , H01L31/0236 , H01L33/16 , H01L2224/16245 , H01L2924/10158
摘要： A method and apparatus for forming a porous layer on the surface of a semiconductor material wherein an electrolyte is provided and is placed in contact with one or more surfaces of a layer of semiconductor material. The electrolyte is heated and a bias is introduced across said electrolyte and the semiconductor material causing a current to flow between the electrolyte and the semiconductor material. The current forms a porous layer on the one or more surfaces of the semiconductor material in contact with the electrolyte. The semiconductor material with its porous layer can serve as a substrate for a light emitter. A semiconductor emission region can be formed on the substrate. The emission region is capable of emitting light omnidirectionally in response to a bias, with the porous layer enhancing extraction of the emitting region light passing through the substrate.
摘要翻译：一种用于在半导体材料的表面上形成多孔层的方法和装置，其中提供电解质并与半导体材料层的一个或多个表面接触。电解质被加热并且跨越所述电解质和半导体材料引入偏压，导致电流在电解质和半导体材料之间流动。电流在与电解质接触的半导体材料的一个或多个表面上形成多孔层。具有多孔层的半导体材料可以用作发光体的基板。可以在衬底上形成半导体发射区域。发射区域能够响应于偏压而全向发光，多孔层增强了通过衬底的发射区域光的提取。

3. 发明授权

US08680556B2 Composite high reflectivity layer 有权
标题翻译：复合高反射层
公开(公告)号：US08680556B2
公开(公告)日：2014-03-25
申请号：US13415626
申请日：2012-03-08
申请人： James Ibbetson , Ting Li , Bernd Keller
发明人： James Ibbetson , Ting Li , Bernd Keller
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/46 , G02B19/0028 , G02B19/0061 , H01L33/48 , H01L33/56 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014
摘要： A high efficiency light emitting diode with a composite high reflectivity layer integral to said LED or package to improve emission efficiency. One embodiment of a light emitting diode (LED) chip comprises a LED and a composite high reflectivity layer integral to the LED to reflect light emitted from the active region. One embodiment of a LED package comprises a LED mounted on a substrate with an encapsulant over said LED and a composite high reflectivity layer arranged to reflect emitted light. The composite layer comprises a plurality of layers such that at least one of said plurality of layers has an index of refraction lower than the encapsulant and a reflective layer on a side of said plurality of layers opposite the LED. In some embodiments, conductive vias are included through the composite layer to allow an electrical signal to pass through the layer to the LED.
摘要翻译：一种具有与所述LED或封装集成的复合高反射率层的高效率发光二极管，以提高发射效率。发光二极管（LED）芯片的一个实施例包括LED和与LED成一体的复合高反射率层以反射从有源区域发射的光。 LED封装的一个实施例包括安装在具有在所述LED上的密封剂的衬底上的LED和布置成反射发射光的复合高反射率层。复合层包括多个层，使得所述多个层中的至少一个层具有低于密封剂的折射率和在与LED相对的所述多个层的一侧上的反射层。在一些实施例中，通过复合层包括导电通孔，以允许电信号通过该层到达LED。

4. 发明授权

US06972438B2 Light emitting diode with porous SiC substrate and method for fabricating 有权
标题翻译：具有多孔SiC衬底的发光二极管及其制造方法
公开(公告)号：US06972438B2
公开(公告)日：2005-12-06
申请号：US10676953
申请日：2003-09-30
申请人： Ting Li , James Ibbetson , Bernd Keller
发明人： Ting Li , James Ibbetson , Bernd Keller
IPC分类号： H01L21/3063 , H01L31/0236 , H01L33/16 , H01L33/20 , H01L33/00
CPC分类号： H01L33/20 , H01L21/3063 , H01L31/0236 , H01L33/16 , H01L2224/16245 , H01L2924/10158
摘要： A method and apparatus for forming a porous layer on the surface of a semiconductor material wherein an electrolyte is provided and is placed in contact with one or more surfaces of a layer of semiconductor material. The electrolyte is heated and a bias is introduced across said electrolyte and the semiconductor material causing a current to flow between the electrolyte and the semiconductor material. The current forms a porous layer on the one or more surfaces of the semiconductor material in contact with the electrolyte. The semiconductor material with its porous layer can serve as a substrate for a light emitter. A semiconductor emission region can be formed on the substrate. The emission region is capable of emitting light omnidirectionally in response to a bias, with the porous layer enhancing extraction of the emitting region light passing through the substrate.
摘要翻译：一种在半导体材料的表面上形成多孔层的方法和装置，其中提供电解质并与半导体材料层的一个或多个表面接触。电解质被加热并且跨越所述电解质和半导体材料引入偏压，导致电流在电解质和半导体材料之间流动。电流在与电解质接触的半导体材料的一个或多个表面上形成多孔层。具有多孔层的半导体材料可以用作发光体的基板。可以在衬底上形成半导体发射区域。发射区域能够响应于偏压而全向发光，多孔层增强了通过衬底的发射区域光的提取。

5. 发明授权

US09159888B2 Wafer level phosphor coating method and devices fabricated utilizing method 有权
标题翻译：晶圆级荧光粉涂布方法及利用方法制造的器件
公开(公告)号：US09159888B2
公开(公告)日：2015-10-13
申请号：US11899790
申请日：2007-09-07
申请人： Ashay Chitnis , James Ibbetson , Bernd Keller , David T. Emerson , John Edmond , Michael J. Bergmann , Jasper S. Cabalu , Jeffrey C. Britt , Arpan Chakraborty , Eric Tarsa , Yankun Fu
发明人： Ashay Chitnis , James Ibbetson , Bernd Keller , David T. Emerson , John Edmond , Michael J. Bergmann , Jasper S. Cabalu , Jeffrey C. Britt , Arpan Chakraborty , Eric Tarsa , James Seruto , Yankun Fu
IPC分类号： H01L33/00 , H01L33/50 , H01L33/62 , H01L33/38 , H01L33/36 , H01L33/44 , H01L33/54
CPC分类号： H01L33/508 , H01L33/0095 , H01L33/36 , H01L33/387 , H01L33/44 , H01L33/505 , H01L33/54 , H01L33/62 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： Methods for fabricating light emitting diode (LED) chips comprising providing a plurality of LEDs typically on a substrate. Pedestals are deposited on the LEDs with each of the pedestals in electrical contact with one of the LEDs. A coating is formed over the LEDs with the coating burying at least some of the pedestals. The coating is then planarized to expose at least some of the buried pedestals while leaving at least some of said coating on said LEDs. The exposed pedestals can then be contacted such as by wire bonds. The present invention discloses similar methods used for fabricating LED chips having LEDs that are flip-chip bonded on a carrier substrate and for fabricating other semiconductor devices. LED chip wafers and LED chips are also disclosed that are fabricated using the disclosed methods.
摘要翻译：制造发光二极管（LED）芯片的方法包括通常在衬底上提供多个LED。基座沉积在LED上，每个基座与其中一个LED电接触。在LED上形成涂层，其中涂层埋入至少一些基座。然后将涂层平坦化以暴露至少一些埋置的基座，同时在所述LED上留下至少一些所述涂层。然后可以例如通过引线接合露出的基座。本发明公开了用于制造LED芯片的类似方法，所述LED芯片具有倒装芯片接合在载体基板上并用于制造其它半导体器件的LED。还公开了使用所公开的方法制造的LED芯片晶片和LED芯片。

6. 发明授权

US08138000B2 Methods for forming semiconductor light emitting devices and submounts 有权
标题翻译：用于形成半导体发光器件和底座的方法
公开(公告)号：US08138000B2
公开(公告)日：2012-03-20
申请号：US12397555
申请日：2009-03-04
申请人： Bernd Keller , James Ibbetson , Peter Andrews , Gerald H. Negley , Norbert Hiller
发明人： Bernd Keller , James Ibbetson , Peter Andrews , Gerald H. Negley , Norbert Hiller
IPC分类号： H01L21/00
CPC分类号： H01L33/507 , H01L25/167 , H01L2224/48091 , H01L2924/10253 , H01L2924/00014 , H01L2924/00
摘要： A submount for a semiconductor light emitting device includes a semiconductor substrate having a cavity therein configured to receive the light emitting device. A first bond pad is positioned in the cavity to couple to a first node of a light emitting device received in the cavity. A second bond pad is positioned in the cavity to couple to a second node of a light emitting device positioned therein. Light emitting devices including a solid wavelength conversion member and methods for forming the same are also provided.
摘要翻译：半导体发光器件的基座包括其中具有腔室的半导体衬底，其配置为接收发光器件。第一接合焊盘定位在空腔中以耦合到容纳在空腔中的发光器件的第一节点。第二接合焊盘定位在空腔中以耦合到定位在其中的发光器件的第二节点。还提供了包括固体波长转换元件的发光器件及其形成方法。

7. 发明申请

US20100283077A1 LIGHT EMITTING DIODES INCLUDING OPTICALLY MATCHED SUBSTRATES 有权
标题翻译：发光二极管，包括光学匹配的基板
公开(公告)号：US20100283077A1
公开(公告)日：2010-11-11
申请号：US12835366
申请日：2010-07-13
申请人： David B. Slater, JR. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
发明人： David B. Slater, JR. , Robert C. Glass , Charles M. Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric J. Tarsa
IPC分类号： H01L33/46 , H01L33/62
CPC分类号： H01L33/20 , H01L33/10 , H01L33/405 , H01L33/60 , H01L33/62 , H01L2224/32014 , H01L2224/48091 , H01L2224/73265 , H01L2924/01079 , H01L2924/01322 , H01L2924/10253 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： Light emitting diodes include a diode region comprising a gallium nitride-based n-type layer, an active region and a gallium nitride-based p-type layer. A substrate is provided on the gallium nitride-based n-type layer and optically matched to the diode region. The substrate has a first face remote from the gallium nitride-based n-type layer, a second face adjacent the gallium nitride-based n-type layer and a sidewall therebetween. At least a portion of the sidewall is beveled, so as to extend oblique to the first and second faces. A reflector may be provided on the gallium nitride-based p-type layer opposite the substrate. Moreover, the diode region may be wider than the second face of the substrate and may include a mesa remote from the first face that is narrower than the first face and the second face.
摘要翻译：发光二极管包括包含氮化镓基n型层，有源区和氮化镓基p型层的二极管区。在氮化镓基n型层上提供衬底，并与二极管区域光学匹配。衬底具有远离氮化镓基n型层的第一面，与氮化镓基n型层相邻的第二面和其间的侧壁。侧壁的至少一部分是斜面的，以便倾斜地延伸到第一和第二面。可以在与衬底相对的氮化镓基p型层上设置反射器。此外，二极管区域可以比衬底的第二面宽，并且可以包括从第一面远离第一面和第二面的台面。

8. 发明授权

US07821023B2 Solid state lighting component 有权
标题翻译：固态照明组件
公开(公告)号：US07821023B2
公开(公告)日：2010-10-26
申请号：US12154691
申请日：2008-05-23
申请人： Thomas Yuan , Bernd Keller , James Ibbetson , Eric Tarsa , Gerald Negley
发明人： Thomas Yuan , Bernd Keller , James Ibbetson , Eric Tarsa , Gerald Negley
IPC分类号： H01L33/00
CPC分类号： H01L33/60 , H01L25/0753 , H01L33/58 , H01L2224/48247 , H01L2224/73265 , H01L2924/01019 , H01L2924/181 , H05B33/0821 , H05B33/0857 , H01L2224/48091 , H01L2924/00014 , H01L2924/00012
摘要： An LED component comprising an array of LED chips mounted on a planar surface of a submount with the LED chips capable of emitting light in response to an electrical signal. The LED chips comprise respective groups emitting at different colors of light, with each of the groups interconnected in a series circuit. A lens is included over the LED chips. Other embodiments can comprise thermal spreading structures included integral to the submount and arranged to dissipate heat from the LED chips.
摘要翻译：一种LED组件，包括安装在基座的平坦表面上的LED芯片的阵列，所述LED芯片能够响应于电信号而发光。 LED芯片包括以不同颜色的光发射的各个组，其中每个组以串联电路互连。 LED芯片中包含一个镜头。其他实施例可以包括散热结构，其包括与底座一体并且被布置成散发来自LED芯片的热量。

9. 发明申请

US20060131599A1 Light emitting diodes including pedestals 审中-公开
标题翻译：包括基座的发光二极管
公开(公告)号：US20060131599A1
公开(公告)日：2006-06-22
申请号：US11338918
申请日：2006-01-25
申请人： David Slater , Robert Glass , Charles Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric Tarsa
发明人： David Slater , Robert Glass , Charles Swoboda , Bernd Keller , James Ibbetson , Brian Thibeault , Eric Tarsa
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/10 , H01L33/405 , H01L33/60 , H01L33/62 , H01L2224/32014 , H01L2224/48091 , H01L2224/73265 , H01L2924/01079 , H01L2924/01322 , H01L2924/10253 , H01L2924/12032 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： Light emitting diodes include a substrate having first and second opposing faces and that is transparent to optical radiation in a predetermined wavelength range and that is patterned to define, in cross-section, a plurality of pedestals that extend into the substrate from the first face towards the second face. A diode region on the second face is configured to emit light in the predetermined wavelength range, into the substrate upon application of voltage across the diode region. A mounting support on the diode region, opposite the substrate is configured to support the diode region, such that the light that is emitted from the diode region into the substrate, is emitted from the first face upon application of voltage across the diode region. The first face of the substrate may include therein a plurality of grooves that define the plurality of triangular pedestals in the substrate. The grooves may include tapered sidewalls and/or a beveled floor. The first face of the substrate also may include therein an array of via holes. The via holes may include tapered sidewalls and/or a floor.
摘要翻译：发光二极管包括具有第一和第二相对面并且对于预定波长范围内的光辐射透明的衬底，其被图案化以在横截面中限定多个基座，其从第一面朝向第二张脸。第二面上的二极管区域被配置为在施加二极管区域上的电压时将预定波长范围内的光发射到衬底中。配置在与衬底相对的二极管区域上的安装支撑件被配置为支撑二极管区域，使得从二极管区域发射到衬底中的光在施加二极管区域上的电压时从第一面发射。衬底的第一面可以包括在衬底中限定多个三角形基座的多个凹槽。凹槽可以包括锥形侧壁和/或斜面底板。衬底的第一面也可以包括一组通孔。通孔可以包括锥形侧壁和/或底板。

10. 发明授权

US09666772B2 High powered light emitter packages with compact optics 有权
公开(公告)号：US09666772B2
公开(公告)日：2017-05-30
申请号：US10836743
申请日：2004-04-29
申请人： James Ibbetson , Jayesh Bharathan , Bernd Keller
发明人： James Ibbetson , Jayesh Bharathan , Bernd Keller
IPC分类号： H01L33/54 , H01L33/60 , H01L33/64 , H01L33/56 , H01L33/58
CPC分类号： H01L33/54 , H01L33/56 , H01L33/58 , H01L33/60 , H01L33/641 , H01L2224/48091 , H01L2924/12044 , H01L2924/00014 , H01L2924/00
摘要： A light emitter includes a planar supporting surface, a light source positioned on the spreader region, and an encapsulant positioned on the spreader region to surround the light source. Except where constrained by adhesion to the planar supporting surface, the encapsulant is capable of expanding and contracting in response to a change in temperature so that forces caused by differences in the coefficient of thermal expansion between the different components is minimized. One or more reflective elements can be positioned proximate to the light source to increase the light emitting efficiency of the light emitter. The reflective elements can include a reflective layer on the spreader region and/or a reflective layer on a portion of the encapsulant.

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