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1. 发明授权

US09362459B2 High reflectivity mirrors and method for making same 有权
标题翻译：高反射镜及其制作方法
公开(公告)号：US09362459B2
公开(公告)日：2016-06-07
申请号：US12553025
申请日：2009-09-02
申请人： Sten Heikman , Matthew Jacob-Mitos , Ting Li , James Ibbetson
发明人： Sten Heikman , Matthew Jacob-Mitos , Ting Li , James Ibbetson
IPC分类号： H01L33/46 , H01L33/00 , H01L33/38 , H01L33/60 , H01L33/40
CPC分类号： H01L33/46 , H01L33/00 , H01L33/0062 , H01L33/387 , H01L33/405 , H01L33/60 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/181 , H01L2924/00012 , H01L2924/00014
摘要： A composite high reflectivity mirror (CHRM) with at least one relatively smooth interior surface interface. The CHRM includes a composite portion, for example dielectric and metal layers, on a base element. At least one of the internal surfaces is polished to achieve a smooth interface. The polish can be performed on the surface of the base element, on various layers of the composite portion, or both. The resulting smooth interface(s) reflect more of the incident light in an intended direction. The CHRMs may be integrated into light emitting diode (LED) devices to increase optical output efficiency.
摘要翻译：具有至少一个相对平滑的内表面界面的复合高反射镜（CHRM）。 CHRM在基底元件上包括复合部分，例如电介质和金属层。至少一个内表面被抛光以实现平滑的界面。抛光剂可以在基体表面，复合部分的各个层上，或两者上进行。所得到的平滑界面反射更多的入射光在预期的方向。 CHRM可以集成到发光二极管（LED）装置中以增加光输出效率。

2. 发明授权

US08212290B2 High temperature performance capable gallium nitride transistor 有权
标题翻译：耐高温性能的氮化镓晶体管
公开(公告)号：US08212290B2
公开(公告)日：2012-07-03
申请号：US11726975
申请日：2007-03-23
申请人： Sten Heikman , Yifeng Wu
发明人： Sten Heikman , Yifeng Wu
IPC分类号： H01L31/072
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/402 , H01L29/404 , H01L29/475 , H01L29/66462
摘要： A transistor device capable of high performance at high temperatures. The transistor comprises a gate having a contact layer that contacts the active region. The gate contact layer is made of a material that has a high Schottky barrier when used in conjunction with a particular semiconductor system (e.g., Group-III nitrides) and exhibits decreased degradation when operating at high temperatures. The device may also incorporate a field plate to further increase the operating lifetime of the device.
摘要翻译：在高温下能够高性能的晶体管器件。晶体管包括具有接触有源区的接触层的栅极。当与特定的半导体系统（例如III族氮化物）结合使用时，栅极接触层由具有高肖特基势垒的材料制成，并且在高温下操作时表现出降低的降解。该装置还可以包括场板以进一步增加装置的工作寿命。

3. 发明申请

US20110263102A1 Methods of Fabricating Normally-Off Semiconductor Devices 有权
标题翻译：制造常关半导体器件的方法
公开(公告)号：US20110263102A1
公开(公告)日：2011-10-27
申请号：US13175069
申请日：2011-07-01
申请人： Sten Heikman , Yifeng Wu
发明人： Sten Heikman , Yifeng Wu
IPC分类号： H01L21/20
CPC分类号： H01L29/7787 , H01L29/1066 , H01L29/2003 , H01L29/402 , H01L29/66462
摘要： Normally-off semiconductor devices are provided. A Group III-nitride buffer layer is provided. A Group III-nitride barrier layer is provided on the Group III-nitride buffer layer. A non-conducting spacer layer is provided on the Group III-nitride barrier layer. The Group III-nitride barrier layer and the spacer layer are etched to form a trench. The trench extends through the barrier layer and exposes a portion of the buffer layer. A dielectric layer is formed on the spacer layer and in the trench and a gate electrode is formed on the dielectric layer. Related methods of forming semiconductor devices are also provided herein.
摘要翻译：提供通常的半导体器件。提供III族氮化物缓冲层。 III族氮化物阻挡层设置在III族氮化物缓冲层上。在III族氮化物阻挡层上提供非导电间隔层。 III族氮化物阻挡层和间隔层被蚀刻以形成沟槽。沟槽延伸穿过阻挡层并暴露缓冲层的一部分。在间隔层和沟槽中形成电介质层，在电介质层上形成栅电极。本文还提供了形成半导体器件的相关方法。

4. 发明授权

US07985986B2 Normally-off semiconductor devices 有权
标题翻译：常关半导体器件
公开(公告)号：US07985986B2
公开(公告)日：2011-07-26
申请号：US12183672
申请日：2008-07-31
申请人： Sten Heikman , Yifeng Wu
发明人： Sten Heikman , Yifeng Wu
IPC分类号： H01L31/0328 , H01L31/0336
CPC分类号： H01L29/7787 , H01L29/1066 , H01L29/2003 , H01L29/402 , H01L29/66462
摘要： Normally-off semiconductor devices are provided. A Group III-nitride buffer layer is provided. A Group III-nitride barrier layer is provided on the Group III-nitride buffer layer. A non-conducting spacer layer is provided on the Group III-nitride barrier layer. The Group III-nitride barrier layer and the spacer layer are etched to form a trench. The trench extends through the barrier layer and exposes a portion of the buffer layer. A dielectric layer is formed on the spacer layer and in the trench and a gate electrode is formed on the dielectric layer. Related methods of forming semiconductor devices are also provided herein.
摘要翻译：提供通常的半导体器件。提供III族氮化物缓冲层。 III族氮化物阻挡层设置在III族氮化物缓冲层上。在III族氮化物阻挡层上提供非导电间隔层。 III族氮化物阻挡层和间隔层被蚀刻以形成沟槽。沟槽延伸穿过阻挡层并暴露缓冲层的一部分。在间隔层和沟槽中形成电介质层，在电介质层上形成栅电极。本文还提供了形成半导体器件的相关方法。

5. 发明申请

US20110031579A1 LOW VOLTAGE DIODE WITH REDUCED PARASITIC RESISTANCE AND METHOD FOR FABRICATING 有权
标题翻译：具有降低阻抗的低电压二极管和制造方法
公开(公告)号：US20110031579A1
公开(公告)日：2011-02-10
申请号：US12905374
申请日：2010-10-15
申请人： Primit Parikh , Sten Heikman
发明人： Primit Parikh , Sten Heikman
IPC分类号： H01L29/47 , H01L21/329
CPC分类号： H01L29/66143 , H01L29/2003 , H01L29/475 , H01L29/66212 , H01L29/872
摘要： A method of making a diode begins by depositing an AlxGa1-xN nucleation layer on a SiC substrate, then depositing an n+ GaN buffer layer, an n− GaN layer, an AlxGa1-xN barrier layer, and an SiO2 dielectric layer. A portion of the dielectric layer is removed and a Schottky metal deposited in the void. The dielectric layer is affixed to the support layer with a metal bonding layer using an Au—Sn utectic wafer bonding process, the substrate is removed using reactive ion etching to expose the n+ layer, selected portions of the n+, n−, and barrier layers are removed to form a mesa diode structure on the dielectric layer over the Schottky metal, and an ohmic contact is deposited on the n+ layer.
摘要翻译：制造二极管的方法开始于在SiC衬底上沉积Al x Ga 1-x N成核层，然后沉积n + GaN缓冲层，n-GaN层，Al x Ga 1-x N势垒层和SiO 2电介质层。去除介电层的一部分并沉积在空隙中的肖特基金属。使用Au-Sn结晶晶片接合工艺用金属接合层将电介质层固定到支撑层上，使用反应离子蚀刻去除衬底以露出n +层，n +，n-和阻挡层的选定部分被去除以在肖特基金属上的电介质层上形成台面二极管结构，并且在n +层上沉积欧姆接触。

6. 发明申请

US20050077538A1 Design methodology for multiple channel heterostructures in polar materials 审中-公开
标题翻译：极性材料中多通道异质结构的设计方法
公开(公告)号：US20050077538A1
公开(公告)日：2005-04-14
申请号：US10962856
申请日：2004-10-12
申请人： Sten Heikman
发明人： Sten Heikman
IPC分类号： H01L21/335 , H01L29/15 , H01L29/20 , H01L21/00 , H01L29/22 , H01L31/072 , H01L33/00 , H01L35/26
CPC分类号： H01L29/66462 , H01L29/155 , H01L29/2003
摘要： A method for fabricating multiple channel heterostructures with high sheet carrier densities in each channel, while maintaining a low energy barrier for transfer of majority carriers between the channels. For a heterostructure where n-type conductivity is desired, n-type dopant impurities are placed at each heterointerface with negative polarization charge, equal in magnitude to the negative polarization charge. For a heterostructure where p-type conductivity is desired, p-type dopant impurities are placed at each heterointerface with positive polarization charge, equal in magnitude to the positive polarization charge. The heterointerfaces with dopant impurities can be graded in chemical composition, over a certain distance, while the dopant impurities are distributed along the graded distance. The heterointerfaces with dopant impurities can also be abrupt, in which case the dopant impurity is located in a sheet or thin layer at or near the heterointerface.
摘要翻译：一种用于在每个通道中制造具有高片载流子密度的多通道异质结构的方法，同时保持用于在通道之间传送多数载流子的低能量势垒。对于需要n型导电性的异质结构，n型掺杂剂杂质被放置在具有与极化电荷相等的负极化电荷的每个异质界面处。对于需要p型导电性的异质结构，p型掺杂剂杂质被放置在正极性电荷的每个异质界面处，与正极化电荷相等。具有掺杂杂质的异质界面可以在一定距离内以化学组成分级，而掺杂剂杂质沿分级距离分布。具有掺杂杂质的异质界面也可以是突变的，在这种情况下，掺杂剂杂质位于异质界面处或附近的片层或薄层。

7. 发明授权

US09105824B2 High reflective board or substrate for LEDs 有权
标题翻译：高反射板或LED基板
公开(公告)号：US09105824B2
公开(公告)日：2015-08-11
申请号：US13370696
申请日：2012-02-10
申请人： Sten Heikman , Zhimin Jamie Yao , James Ibbetson , Fan Zhang
发明人： Sten Heikman , Zhimin Jamie Yao , James Ibbetson , Fan Zhang
IPC分类号： H01L33/46 , H01L33/60 , H01L33/54 , H01L33/62
CPC分类号： H01L33/60 , H01L33/54 , H01L33/62 , H01L2224/73265 , H01L2224/48091 , H01L2924/00014
摘要： Light emitting devices and methods are disclosed that provide improved light output. The devices have an LED mounted to a substrate, board or submount characterized by improved reflectivity, which reduces the absorption of LED light. This increases the amount of light that can emit from the LED device. The LED devices also exhibit improved emission characteristics by having a reflective coating on the submount that is substantially non-yellowing. One embodiment of a light emitting device according to the present invention comprises a submount having a circuit layer. A reflective coating is included between at least some of the elements of the circuit layer. A light emitting diode mounted to the circuit layer, the reflective coating being reflective to the light emitted by the light emitting diode. In some embodiments, the reflective coating comprises a carrier with scattering particles having a different index of refraction than said carrier material.
摘要翻译：公开了提供改进的光输出的发光器件和方法。这些装置具有安装到基板，板或基座的LED，其特征在于改进的反射率，这降低了LED光的吸收。这增加了可从LED器件发射的光量。 LED器件还通过在基座上具有基本不变黄的反射涂层来显示出改进的发射特性。根据本发明的发光器件的一个实施例包括具有电路层的基座。反射涂层包括在电路层的至少一些元件之间。安装到电路层的发光二极管，反射涂层对由发光二极管发出的光反射。在一些实施例中，反射涂层包括具有与所述载体材料不同的折射率的散射颗粒的载体。

8. 发明授权

US09093293B2 High voltage low current surface emitting light emitting diode 有权
标题翻译：高压低电流表面发光二极管
公开(公告)号：US09093293B2
公开(公告)日：2015-07-28
申请号：US13190094
申请日：2011-07-25
申请人： James Ibbetson , Sten Heikman , Julio Garceran , George Brandes
发明人： James Ibbetson , Sten Heikman , Julio Garceran , George Brandes
IPC分类号： H01L27/15 , H01L25/075 , H01L33/00 , H01L33/62
CPC分类号： H01L25/0753 , H01L33/0079 , H01L33/62 , H01L2224/32245 , H01L2224/48247 , H01L2224/73265 , H01L2224/48091 , H01L2924/00014 , H01L2924/00
摘要： A light emitting diode chip includes a submount, a reflective layer on the submount, an insulating layer on the reflective layer opposite the submount, and a plurality of sub-LEDs on the insulating layer. Each of the sub-LEDs includes a first face adjacent to the submount and a transparent contact on the first face between the sub-LED and the insulating layer and electrical interconnects between adjacent ones of the sub-LEDs.
摘要翻译：一种发光二极管芯片，包括基座，底座上的反射层，与基座相反的反射层上的绝缘层，以及绝缘层上的多个子LED。每个子LED包括与子基座相邻的第一面和在子LED与绝缘层之间的第一面上的透明触点和相邻的子LED之间的电互连。

9. 发明申请

US20120235160A1 Normally-Off Semiconductor Devices 有权
标题翻译：常关半导体器件
公开(公告)号：US20120235160A1
公开(公告)日：2012-09-20
申请号：US13483737
申请日：2012-05-30
申请人： Sten Heikman , Yifeng Wu
发明人： Sten Heikman , Yifeng Wu
IPC分类号： H01L29/778
CPC分类号： H01L29/7787 , H01L29/1066 , H01L29/2003 , H01L29/402 , H01L29/66462
摘要： Normally-off semiconductor devices are provided. A Group III-nitride buffer layer is provided. A Group III-nitride barrier layer is provided on the Group III-nitride buffer layer. A non-conducting spacer layer is provided on the Group III-nitride barrier layer. The Group III-nitride barrier layer and the spacer layer are etched to form a trench. The trench extends through the barrier layer and exposes a portion of the buffer layer. A dielectric layer is formed on the spacer layer and in the trench and a gate electrode is formed on the dielectric layer. Related methods of forming semiconductor devices are also provided herein.
摘要翻译：提供通常的半导体器件。提供III族氮化物缓冲层。 III族氮化物阻挡层设置在III族氮化物缓冲层上。在III族氮化物阻挡层上提供非导电间隔层。 III族氮化物阻挡层和间隔层被蚀刻以形成沟槽。沟槽延伸穿过阻挡层并暴露缓冲层的一部分。在间隔层和沟槽中形成电介质层，在电介质层上形成栅电极。本文还提供了形成半导体器件的相关方法。

10. 发明申请

US20120228675A1 HIGH TEMPERATURE PERFORMANCE CAPABLE GALLIUM NITRIDE TRANSISTOR 有权
标题翻译：高温性能耐高压氮化镓晶体管
公开(公告)号：US20120228675A1
公开(公告)日：2012-09-13
申请号：US13480328
申请日：2012-05-24
申请人： Sten Heikman , Yifeng Wu
发明人： Sten Heikman , Yifeng Wu
IPC分类号： H01L29/778
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/402 , H01L29/404 , H01L29/475 , H01L29/66462
摘要： A transistor device capable of high performance at high temperatures. The transistor comprises a gate having a contact layer that contacts the active region. The gate contact layer is made of a material that has a high Schottky barrier when used in conjunction with a particular semiconductor system (e.g., Group-III nitrides) and exhibits decreased degradation when operating at high temperatures. The device may also incorporate a field plate to further increase the operating lifetime of the device.
摘要翻译：在高温下能够高性能的晶体管器件。晶体管包括具有接触有源区的接触层的栅极。当与特定的半导体系统（例如III族氮化物）结合使用时，栅极接触层由具有高肖特基势垒的材料制成，并且在高温下操作时表现出降低的降解。该装置还可以包括场板以进一步增加装置的工作寿命。

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