专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06702648B1 Use of scatterometry/reflectometry to measure thin film delamination during CMP 有权
标题翻译：在CMP期间使用散射/反射测量薄膜分层
公开(公告)号：US06702648B1
公开(公告)日：2004-03-09
申请号：US10277559
申请日：2002-10-22
申请人： Steven C. Avanzino , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
发明人： Steven C. Avanzino , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： B24B4900
CPC分类号： B24B37/013 , B24B49/12
摘要： One aspect of the present invention relates to a system and method for examining a wafer for delamination in real time while polishing the wafer. The system comprises a polishing system programmed to planarize one or more film layers formed on at least a portion of a semiconductor wafer surface; a real-time metrology system coupled to the polishing system such that the metrology system examines the layers as they are planarized; and one or more delamination sensors, wherein at least a portion of each sensor is integrated into the polishing system in order to provide data to the metrology system and wherein the sensor comprises at least one optical element to detect delamination during polishing. The method involves polishing at least a portion of an uppermost film layer and examining at least a portion of a layer underlying the uppermost film layer for delamination as the uppermost layer is being polished.
摘要翻译：本发明的一个方面涉及一种用于在抛光晶片的同时检查晶片以实时分层的系统和方法。该系统包括被编程为平坦化形成在半导体晶片表面的至少一部分上的一个或多个膜层的抛光系统; 耦合到抛光系统的实时计量系统，使得计量系统在平面化时对层进行检查; 和一个或多个分层传感器，其中每个传感器的至少一部分被集成到抛光系统中，以便向计量系统提供数据，并且其中传感器包括至少一个光学元件以在抛光期间检测分层。该方法包括抛光最上面的薄膜层的至少一部分，并且在最上层被抛光时检查最上面的薄膜层下面的层的至少一部分用于分层。

2. 发明授权

US06684172B1 Sensor to predict void free films using various grating structures and characterize fill performance 失效
标题翻译：传感器预测使用各种光栅结构的无空隙膜，并表征填充性能
公开(公告)号：US06684172B1
公开(公告)日：2004-01-27
申请号：US10034165
申请日：2001-12-27
申请人： Ramkumar Subramanian , Steven C. Avanzino , Christopher F. Lyons , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Cyrus E. Tabery
发明人： Ramkumar Subramanian , Steven C. Avanzino , Christopher F. Lyons , Khoi A. Phan , Bharath Rangarajan , Bhanwar Singh , Cyrus E. Tabery
IPC分类号： G01L2500
CPC分类号： C23C16/52 , C23C14/547 , C23C18/1675 , C25D21/12 , H01L21/76877
摘要： One aspect of the invention relates to a metal fill process and systems therefor involving providing a standard calibration wafer having a plurality of fill features of known dimensions in a metalization tool; depositing a metal material over the standard calibration wafer; monitoring the deposition of metal material using a sensor system, the sensor system operable to measure one or more fill process parameters and to generate fill process data; controlling the deposition of metal material to minimize void formation using a control system wherein the control system receives fill process data from the sensor system and analyzes the fill process data to generate a feed-forward control data operative to control the metalization tool; and depositing metal material over a production wafer in the metalization tool using the fill process data generated by the sensor system and the control system. The invention further relates to tool characterization processes and systems therefor.
摘要翻译：本发明的一个方面涉及一种金属填充方法及其系统，其涉及在金属化工具中提供具有已知尺寸的多个填充特征的标准校准晶片; 在标准校准晶片上沉积金属材料; 使用传感器系统监测金属材料的沉积，所述传感器系统可操作以测量一个或多个填充过程参数并产生填充过程数据; 控制金属材料的沉积以最小化使用控制系统的空隙形成，其中控制系统从传感器系统接收填充过程数据并分析填充过程数据以产生可操作以控制金属化工具的前馈控制数据; 以及使用由传感器系统和控制系统产生的填充过程数据在金属化工具中的生产晶片上沉积金属材料。本发明还涉及其工具表征过程及其系统。

3. 发明授权

US06562185B2 Wafer based temperature sensors for characterizing chemical mechanical polishing processes 有权
标题翻译：用于表征化学机械抛光工艺的基于晶圆的温度传感器
公开(公告)号：US06562185B2
公开(公告)日：2003-05-13
申请号：US09955552
申请日：2001-09-18
申请人： Steven C. Avanzino , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
发明人： Steven C. Avanzino , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： B24B3700
CPC分类号： B24B37/015
摘要： A system for characterizing a chemical mechanical polishing process is provided. The system includes a wafer that has a metal, polysilicon, and/or dielectric layer and/or substrate and a temperature sensor located in and/or on the metal, polysilicon and/or dielectric layer and/or substrate. The system also includes a temperature monitoring system that can read the wafer temperature from the temperature sensors and that can analyze the wafer temperature to characterize the chemical mechanical polishing process. Such characterization includes producing information concerning relationships between wafer temperature and polishing rate, polishing uniformity and introduction of defects during polishing. Such relationships are correlated with wafer temperature as related to parameters like polishing time, pressure, speed, slurry properties and wafer/metal layer properties. Such characterization can be employed, for example, to better understand a CMP process, to facilitate initializing subsequent chemical mechanical polishing processes and/or apparatus and/or to control such chemical mechanical polishing processes and/or apparatus by monitoring and/or controlling wafer temperature.
摘要翻译：提供了表征化学机械抛光工艺的系统。该系统包括具有位于金属，多晶硅和/或电介质层和/或衬底中和/或上的金属，多晶硅和/或电介质层和/或衬底和温度传感器的晶片。该系统还包括一个温度监控系统，可以从温度传感器读取晶圆温度，并且可以分析晶圆温度以表征化学机械抛光过程。这种表征包括产生关于晶片温度和抛光速率之间的关系的信息，抛光均匀性和在抛光期间引入缺陷。这些关系与晶片温度相关，如与抛光时间，压力，速度，浆料性质和晶片/金属层性质等参数相关。可以采用这种表征，例如，更好地理解CMP工艺，以便于初始化随后的化学机械抛光工艺和/或设备和/或通过监测和/或控制晶片温度来控制这种化学机械抛光工艺和/或设备。

4. 发明授权

US06771356B1 Scatterometry of grating structures to monitor wafer stress 失效
标题翻译：光栅结构的散射法监测晶片应力
公开(公告)号：US06771356B1
公开(公告)日：2004-08-03
申请号：US10050626
申请日：2002-01-16
申请人： Christopher F. Lyons , Bhanwar Singh , Steven C. Avanzino , Khoi A. Phan , Bharath Rangarajan , Ramkumar Subramanian , Cyrus E. Tabery
发明人： Christopher F. Lyons , Bhanwar Singh , Steven C. Avanzino , Khoi A. Phan , Bharath Rangarajan , Ramkumar Subramanian , Cyrus E. Tabery
IPC分类号： G01B1116
CPC分类号： G01B11/165
摘要： A system for monitoring a fabrication process is provided. The system includes one or more light sources, each light source directing light to one or more gratings on a wafer. Light reflected from the gratings is collected by a measuring system that processes the collected light. The collected light is indicative of distortion due to stress at respective portions of the wafer. The measuring system provides distortion/stress related data to a processor that determines the acceptability of the distortion of the respective portions of the wafer. The collected light may be analyzed by scatterometry systems to produce scatterometry signatures associated with distortion and to produce feed-forward control information that can be employed to control semiconductor fabrication processes.
摘要翻译：提供了一种用于监视制造工艺的系统。该系统包括一个或多个光源，每个光源将光引导到晶片上的一个或多个光栅。从光栅反射的光被处理收集的光的测量系统收集。所收集的光指示由于晶片的各个部分处的应力引起的变形。测量系统向处理器提供失真/应力相关数据，该处理器确定晶片各部分的失真的可接受性。收集的光可以通过散射测量系统进行分析，以产生与失真相关联的散射仪签名并产生可用于控制半导体制造过程的前馈控制信息。

5. 发明授权

US06808591B1 Model based metal overetch control 有权
标题翻译：基于型号的金属防腐控制
公开(公告)号：US06808591B1
公开(公告)日：2004-10-26
申请号：US10021531
申请日：2001-12-12
申请人： Khoi A. Phan , Bharath Rangarajan , Christopher F. Lyons , Steven C. Avanzino , Ramkumar Subramanian , Bhanwar Singh , Cyrus E. Tabery
发明人： Khoi A. Phan , Bharath Rangarajan , Christopher F. Lyons , Steven C. Avanzino , Ramkumar Subramanian , Bhanwar Singh , Cyrus E. Tabery
IPC分类号： H01L21302
CPC分类号： H01L21/67253 , H01L21/32136
摘要： A systems and methodologies are provided for metal overetch control. Metal overetch processes are controlled by utilizing overetch device models to determine overetch times or overetch endpoints. The systems and methodologies reduce the need for manual testing and manual overetch characterization. An overetch system includes a metal etcher, a target device and an overetch controller. The target device is located in or on the metal etcher. The overetch controller is coupled to the metal etcher. The overetch controller controls overetching of the target device by the metal etcher. The overetch controller includes an overetch time controller, a set of etch control models and a control system.
摘要翻译：提供了用于金属过程控制的系统和方法。通过利用过滤设备模型来确定金属过蚀刻过程以确定过蚀刻时间或过程延伸端点。系统和方法减少了手动测试和手动过程表征的需要。一种过蚀系统包括金属蚀刻机，目标装置和过程控制器。目标设备位于金属蚀刻机中或其上。该过程控制器耦合到金属蚀刻器。过程控制器通过金属蚀刻器控制目标器件的过蚀刻。该过程控制器包括一个过时延时间控制器，一组蚀刻控制模型和一个控制系统。

6. 发明授权

US06934032B1 Copper oxide monitoring by scatterometry/ellipsometry during nitride or BLOK removal in damascene process 有权
标题翻译：在大马士革过程中氮化物或BLOK去除期间通过散射测量/椭偏仪测量氧化铜
公开(公告)号：US06934032B1
公开(公告)日：2005-08-23
申请号：US10261514
申请日：2002-09-30
申请人： Ramkumar Subramanian , Steven C. Avanzino , Bharath Rangarajan , Bhanwar Singh
发明人： Ramkumar Subramanian , Steven C. Avanzino , Bharath Rangarajan , Bhanwar Singh
IPC分类号： C23F4/00 , G01N21/21 , H01L21/311 , G01N21/55 , C23F1/18 , H01L21/66
CPC分类号： H01L21/31116 , C23F4/00 , G01N21/211
摘要： A system and methodology for monitoring and/or controlling a semiconductor fabrication process is disclosed. Scatterometry and/or ellipsometry based techniques can be employed to facilitate providing measurement signals during a damascene phase of the fabrication process. The thickness of layers etched away during the process can be monitored and one or more fabrication components and/or operating parameters associated with the fabrication component(s) can be adjusted in response to the measurements to achieve desired results, such as to mitigate the formation of copper oxide during etching of a copper layer, for example.
摘要翻译：公开了用于监测和/或控制半导体制造工艺的系统和方法。可以采用基于散射法和/或椭偏仪的技术来促进在制造过程的镶嵌阶段期间提供测量信号。可以监测在该过程中被蚀刻掉的层的厚度，并且可以响应于测量来调整与制造部件相关联的一个或多个制造部件和/或操作参数以实现期望的结果，例如减轻形成例如在蚀刻铜层期间的氧化铜。

7. 发明授权

US07158896B1 Real time immersion medium control using scatterometry 失效
标题翻译：实时浸入介质控制采用散射法
公开(公告)号：US07158896B1
公开(公告)日：2007-01-02
申请号：US10978604
申请日：2004-11-01
申请人： Bhanwar Singh , Srikanteswara Dakshina-Murthy , Khoi A. Phan , Ramkumar Subramanian , Bharath Rangarajan , Iraj Emami
发明人： Bhanwar Singh , Srikanteswara Dakshina-Murthy , Khoi A. Phan , Ramkumar Subramanian , Bharath Rangarajan , Iraj Emami
IPC分类号： G06F19/00
CPC分类号： G03F7/70916 , G03F7/2041 , G03F7/70341
摘要： Systems and/or methods are disclosed for measuring and/or controlling an amount of impurity that is dissolved within an immersion medium employed with immersion lithography. The impurity can be photoresist from a photoresist layer coated upon a substrate surface. A known grating structure is built upon the substrate. A real time immersion medium monitoring component facilitates measuring and/or controlling the amount of impurities dissolved within the immersion medium by utilizing light scattered from the known grating structure.
摘要翻译：公开了用于测量和/或控制溶解在浸入式光刻中使用的浸渍介质中的杂质量的系统和/或方法。杂质可以是来自涂覆在基材表面上的光致抗蚀剂层的光致抗蚀剂。已知的光栅结构被构建在衬底上。实时浸没介质监测部件通过利用从已知光栅结构散射的光来便于测量和/或控制溶解在浸没介质中的杂质的量。

8. 发明授权

US07078348B1 Dual layer patterning scheme to make dual damascene 失效
标题翻译：双层图案方案制作双镶嵌
公开(公告)号：US07078348B1
公开(公告)日：2006-07-18
申请号：US09893188
申请日：2001-06-27
申请人： Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan , Michael K. Templeton
发明人： Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan , Michael K. Templeton
IPC分类号： H01L21/302 , H01L21/3065
CPC分类号： H01L21/31144 , H01L21/76807 , H01L21/76811 , H01L21/76813
摘要： One aspect of the present invention relates to a method for making a dual damascene pattern in an insulative layer in a single etch process involving providing a wafer having at least one insulative layer formed thereon; depositing a first photoresist layer over the at least one insulative layer; patterning a first image into the first photoresist layer; curing the first patterned photoresist layer; depositing a second photoresist layer over the first patterned photoresist layer; patterning a second image into the second photoresist layer; and etching the at least one insulative layer through the first patterned photoresist layer and the second patterned photoresist layer simultaneously in the single etch process.
摘要翻译：本发明的一个方面涉及在单一蚀刻工艺中在绝缘层中制造双镶嵌图案的方法，该方法包括提供其上形成有至少一个绝缘层的晶片; 在所述至少一个绝缘层上沉积第一光致抗蚀剂层; 将第一图像图案化成第一光致抗蚀剂层; 固化第一图案化光致抗蚀剂层; 在所述第一图案化光致抗蚀剂层上沉积第二光致抗蚀剂层; 将第二图像图案化成第二光致抗蚀剂层; 以及在单次蚀刻工艺中同时蚀刻通过第一图案化光致抗蚀剂层和第二图案化光致抗蚀剂层的至少一个绝缘层。

9. 发明授权

US07052575B1 System and method for active control of etch process 有权
标题翻译：用于主动控制蚀刻工艺的系统和方法
公开(公告)号：US07052575B1
公开(公告)日：2006-05-30
申请号：US09845454
申请日：2001-04-30
申请人： Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
发明人： Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： C23F1/00
CPC分类号： H01L21/67253 , H01J37/32935 , H01L21/67063 , H01L22/34
摘要： A system for regulating an etch process is provided. The system includes one or more light sources, each light source directing light to one or more features and/or gratings on a wafer. Light reflected from the features and/or gratings is collected by a measuring system, which processes the collected light. The collected light is indicative of the dimensions achieved at respective portions of the wafer. The measuring system provides etching related data to a processor that determines the acceptability of the etching of the respective portions of the wafer. The system also includes one or more etching devices, each such device corresponding to a portion of the wafer and providing for the etching thereof. The processor selectively controls the etching devices to regulate etching of the portions of the wafer.
摘要翻译：提供了一种用于调节蚀刻工艺的系统。该系统包括一个或多个光源，每个光源将光引导到晶片上的一个或多个特征和/或光栅。从特征和/或光栅反射的光由测量系统收集，该系统处理收集的光。所收集的光指示在晶片的相应部分处获得的尺寸。测量系统向处理器提供蚀刻相关数据，该处理器确定晶片的相应部分的蚀刻的可接受性。该系统还包括一个或多个蚀刻装置，每个这样的装置对应于晶片的一部分并提供其蚀刻。处理器选择性地控制蚀刻装置来调节晶片的部分的蚀刻。

10. 发明授权

US06931618B1 Feed forward process control using scatterometry for reticle fabrication 有权
标题翻译：使用分光镜制作的散射法进行前馈过程控制
公开(公告)号：US06931618B1
公开(公告)日：2005-08-16
申请号：US10050472
申请日：2002-01-16
申请人： Cyrus E. Tabery , Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
发明人： Cyrus E. Tabery , Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian
IPC分类号： G01B9/00 , G03F1/00 , G06F17/50 , G03H9/00
CPC分类号： G03F1/84 , G03F1/00
摘要： A system for selectively generating and feeding forward reticle fabrication data is provided. The system includes components for fabricating a reticle and a control system operatively connected to the fabricating components, where the control system can control the operation of the fabricating components. The control system bases its control of the fabricating components, at least in part, on feed forward control information generated by a processor that analyzes scatterometry based reticle fabrication data gathered from measurement components. The scatterometry data is compared to data stored in a signature data store that facilitates analyzing gathered scatterometry signatures to produce feed forward control information that can be employed to manipulate subsequent reticle fabrication processes and/or apparatus.
摘要翻译：提供了一种用于选择性地生成和馈送标线制造数据的系统。该系统包括用于制造掩模版的部件和可操作地连接到制造部件的控制系统，其中控制系统可以控制制造部件的操作。控制系统至少部分地基于由分析从测量部件收集的基于散射仪的掩模版制造数据的处理器生成的前馈控制信息的制造部件的控制。将散射测量数据与存储在签名数据存储器中的数据进行比较，其有助于分析所收集的散射光标签以产生可用于操纵随后的标线制造工艺和/或设备的前馈控制信息。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式