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1. 发明授权

US07065427B1 Optical monitoring and control of two layers of liquid immersion media 失效
标题翻译：两层液浸介质的光学监测与控制
公开(公告)号：US07065427B1
公开(公告)日：2006-06-20
申请号：US10979367
申请日：2004-11-01
申请人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan , Khoi A. Phan
发明人： Srikanteswara Dakshina-Murthy , Bhanwar Singh , Ramkumar Subramanian , Bharath Rangarajan , Khoi A. Phan
IPC分类号： G06F19/00 , G02B7/00 , H01L21/00
CPC分类号： G03F7/7085 , G03F7/70341 , G03F7/70591
摘要： A multi-layer immersion medium monitoring system for a lithographic process monitors characteristics of an immersion medium of a semiconductor manufacturing process. The multi-layer immersion medium includes at least a first liquid of a first density (or viscosity) and a second liquid of a lower density (or viscosity), both of which are interspersed between a final optical component and a semiconductor layer. The higher density layer is provided to reduce turbulence in the immersion medium during the lithographic processes. A scatterometry system monitors optical characteristics of the multi-layer immersion medium to effectuate control of a lithographic process.
摘要翻译：用于光刻工艺的多层浸渍介质监测系统监测半导体制造工艺的浸渍介质的特性。多层浸渍介质至少包括第一密度（或粘度）的第一液体和较低密度（或粘度）的第二液体，它们都分散在最终的光学部件和半导体层之间。提供更高密度的层以在光刻过程中减少浸没介质中的湍流。散射测量系统监测多层浸没介质的光学特性，以实现光刻工艺的控制。

2. 发明授权

US06982043B1 Scatterometry with grating to observe resist removal rate during etch 有权
标题翻译：用光栅进行散射测量以观察蚀刻期间的抗蚀剂去除率
公开(公告)号：US06982043B1
公开(公告)日：2006-01-03
申请号：US10382181
申请日：2003-03-05
申请人： Ramkumar Subramanian , Bharath Rangarajan , Catherine B. Labelle , Bhanwar Singh , Christopher F. Lyons
发明人： Ramkumar Subramanian , Bharath Rangarajan , Catherine B. Labelle , Bhanwar Singh , Christopher F. Lyons
IPC分类号： B44C1/22
CPC分类号： H01L22/12 , H01L22/26
摘要： Disclosed are a system and method for monitoring a patterned photoresist clad-wafer structure undergoing an etch process. The system includes a semiconductor wafer structure comprising a substrate, one or more intermediate layers overlying the substrate, and a first patterned photoresist layer overlying the intermediate layers, the semiconductor wafer structure being etched through one or more openings in the photoresist layer; a wafer-etch photoresist monitoring system programmed to obtain data relating to the photoresist layer as the etch process progresses; a pattern-specific grating aligned with the wafer structure and employed in conjunction with the monitoring system, the grating having at least one of a pitch and a critical dimension identical to the first patterned photoresist layer; and a wafer processing controller operatively connected to the monitoring system and adapted to receive data from the monitoring system in order to determine adjustments to a subsequent wafer clean process.
摘要翻译：公开了用于监测经历蚀刻工艺的图案化光致抗蚀剂包覆晶片结构的系统和方法。该系统包括半导体晶片结构，其包括衬底，覆盖衬底的一个或多个中间层和覆盖中间层的第一图案化光致抗蚀剂层，半导体晶片结构通过光致抗蚀剂层中的一个或多个开口进行蚀刻; 晶片蚀刻光刻胶监测系统被编程为随着蚀刻工艺的进行获得与光致抗蚀剂层有关的数据; 与晶片结构对准并与监视系统结合使用的图案特定光栅，光栅具有与第一图案化光致抗蚀剂层相同的间距和临界尺寸中的至少一个; 以及晶片处理控制器，可操作地连接到所述监控系统并且适于从所述监控系统接收数据，以便确定随后的晶片清洁过程的调整。

3. 发明授权

US06954678B1 Artificial intelligence system for track defect problem solving 失效
标题翻译：用于轨道缺陷问题解决的人工智能系统
公开(公告)号：US06954678B1
公开(公告)日：2005-10-11
申请号：US10261650
申请日：2002-09-30
申请人： Khoi A. Phan , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
发明人： Khoi A. Phan , Bhanwar Singh , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： G01R31/26 , G05B23/02 , G06F19/00 , H01L21/66
CPC分类号： H01L22/26 , G05B23/0286
摘要： A system and method facilitating lithography defect solution generation is provided. The invention includes a defect solution component and a defect alert component. The defect solution component provides potential solution(s) to a defect within the lithography process utilizing artificial intelligence technique(s) (e.g., Bayesian learning methods that perform analysis over alternative dependent structures and apply a score, Bayesian classifiers and other statistical classifiers, including decision tree learning methods, support vector machines, linear and non-linear regression and/or neural network).
摘要翻译：提供了一种促进光刻缺陷解决方案生成的系统和方法。本发明包括缺陷解决方案组件和缺陷警报组件。缺陷解决方案组件使用人工智能技术（例如，贝叶斯学习方法对替代依赖结构进行分析并应用分数贝叶斯分类器和其他统计分类器，包括决策树学习方法，支持向量机，线性和非线性回归和/或神经网络）。

4. 发明授权

US06905950B2 Growing copper vias or lines within a patterned resist using a copper seed layer 有权
标题翻译：使用铜种子层在图案化抗蚀剂中生长铜通孔或线
公开(公告)号：US06905950B2
公开(公告)日：2005-06-14
申请号：US09893198
申请日：2001-06-27
申请人： Ramkumar Subramanian , Michael K. Templeton , Bhanwar Singh , Bharath Rangarajan
发明人： Ramkumar Subramanian , Michael K. Templeton , Bhanwar Singh , Bharath Rangarajan
IPC分类号： H01L21/768 , H01L21/3205
CPC分类号： H01L21/76885 , H01L21/76879
摘要： The present invention involves a method for fabricating interconnecting lines and vias. According to the invention, copper is grown within the openings in a patterned coating. The patterned coating can be a resist coating or a dielectric coating. Either type of coating can be formed over a copper seed layer, whereby the seed layer is exposed within the pattern gaps. The copper seed layer can also be provided within the pattern gaps after patterning. Copper features are grown within the pattern gaps by plating. Where the patterned coating is a resist, the resist is stripped leaving the copper features in the inverse pattern image. The copper features can be coated with a diffusion barrier layer and a dielectric. The dielectric is polished to leave the dielectric filling the spaces between copper features. The invention provides copper lines and vias without the need for a dielectric or metal etching step. Another benefit of the invention is that lines widths can be increased by trimming the patterned coating prior to growing the copper features.
摘要翻译：本发明涉及制造互连线和通孔的方法。根据本发明，铜在图案化涂层的开口内生长。图案化的涂层可以是抗蚀剂涂层或介电涂层。任何一种类型的涂层可以在铜籽晶层上形成，从而种子层在图案间隙内露出。图案化之后也可以在图案间隙内提供铜籽晶层。铜特征通过电镀在图案间隙内生长。在图案涂层是抗蚀剂的情况下，剥离抗蚀剂，留下逆向图案图案中的铜特征。铜的特征可以涂覆有扩散阻挡层和电介质。电介质被抛光以留下电介质填充铜特征之间的空间。本发明提供铜线和通孔，而不需要电介质或金属蚀刻步骤。本发明的另一个好处是通过在生长铜特征之前修整图案化涂层可以增加线宽。

5. 发明授权

US06879051B1 Systems and methods to determine seed layer thickness of trench sidewalls 失效
标题翻译：确定沟槽侧壁种子层厚度的系统和方法
公开(公告)号：US06879051B1
公开(公告)日：2005-04-12
申请号：US10050454
申请日：2002-01-16
申请人： Bhanwar Singh , Michael K. Templeton , Bharath Rangarajan , Ramkumar Subramanian
发明人： Bhanwar Singh , Michael K. Templeton , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： C23C16/04 , C23C16/52 , H01L21/31
CPC分类号： C23C16/045 , C23C16/52
摘要： One aspect of the present invention relates to a method to facilitate formation of seed layer portions on sidewall surfaces of a trench formed in a substrate. The method involves the steps of forming a conformal seed layer over a barrier layer disposed conformal to a trench, wherein the trench is formed in the substrate; reflecting a light beam of x-ray radiation at the seed layer sidewall portions; generating a measurement signal based on the reflected portion of the light beam; and determining a thickness of the sidewall portions based on the measurement signal while the sidewall portions are being formed over the trench.
摘要翻译：本发明的一个方面涉及一种促进在衬底中形成的沟槽的侧壁表面上形成种子层部分的方法。该方法包括以下步骤：在与沟槽共形设置的阻挡层上形成保形种子层，其中沟槽形成在衬底中; 在种子层侧壁部分反射x射线辐射的光束; 基于所述光束的反射部分生成测量信号; 以及当在所述沟槽上形成所述侧壁部分时，基于所述测量信号来确定所述侧壁部分的厚度。

6. 发明授权

US06771356B1 Scatterometry of grating structures to monitor wafer stress 失效
标题翻译：光栅结构的散射法监测晶片应力
公开(公告)号：US06771356B1
公开(公告)日：2004-08-03
申请号：US10050626
申请日：2002-01-16
申请人： Christopher F. Lyons , Bhanwar Singh , Steven C. Avanzino , Khoi A. Phan , Bharath Rangarajan , Ramkumar Subramanian , Cyrus E. Tabery
发明人： Christopher F. Lyons , Bhanwar Singh , Steven C. Avanzino , Khoi A. Phan , Bharath Rangarajan , Ramkumar Subramanian , Cyrus E. Tabery
IPC分类号： G01B1116
CPC分类号： G01B11/165
摘要： A system for monitoring a fabrication process is provided. The system includes one or more light sources, each light source directing light to one or more gratings on a wafer. Light reflected from the gratings is collected by a measuring system that processes the collected light. The collected light is indicative of distortion due to stress at respective portions of the wafer. The measuring system provides distortion/stress related data to a processor that determines the acceptability of the distortion of the respective portions of the wafer. The collected light may be analyzed by scatterometry systems to produce scatterometry signatures associated with distortion and to produce feed-forward control information that can be employed to control semiconductor fabrication processes.
摘要翻译：提供了一种用于监视制造工艺的系统。该系统包括一个或多个光源，每个光源将光引导到晶片上的一个或多个光栅。从光栅反射的光被处理收集的光的测量系统收集。所收集的光指示由于晶片的各个部分处的应力引起的变形。测量系统向处理器提供失真/应力相关数据，该处理器确定晶片各部分的失真的可接受性。收集的光可以通过散射测量系统进行分析，以产生与失真相关联的散射仪签名并产生可用于控制半导体制造过程的前馈控制信息。

7. 发明授权

US06704101B1 Scatterometry based measurements of a moving substrate 失效
标题翻译：移动基板的基于散射法的测量
公开(公告)号：US06704101B1
公开(公告)日：2004-03-09
申请号：US10050423
申请日：2002-01-16
申请人： Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian , Michael K. Templeton
发明人： Bharath Rangarajan , Bhanwar Singh , Ramkumar Subramanian , Michael K. Templeton
IPC分类号： G01N2100
CPC分类号： G01N21/47 , G01N21/4788 , G01N21/55 , G01N21/9501 , G01N2201/10
摘要： A system and method are disclosed for monitoring characteristics of a substrate. A substrate is supported for movement within a processing environment and an incident light beam is emitted onto a surface of the substrate. The incident beam is provided to a moveable reflector that directs the beam to the substrate. A control system controls movement of the reflector so as to selectively interrogates the substrate with the beam.
摘要翻译：公开了用于监测基板的特性的系统和方法。支撑衬底在处理环境中移动，并且将入射光束发射到衬底的表面上。入射光束被提供到将光束引导到衬底的可移动反射器。控制系统控制反射器的运动，以便选择性地用光束询问衬底。

8. 发明授权

US06663723B1 Vapor drying for cleaning photoresists 失效
标题翻译：用于清洁光致抗蚀剂的蒸气干燥
公开(公告)号：US06663723B1
公开(公告)日：2003-12-16
申请号：US09974276
申请日：2001-10-10
申请人： Michael K. Templeton , Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan
发明人： Michael K. Templeton , Ramkumar Subramanian , Khoi A. Phan , Bharath Rangarajan
IPC分类号： B08B500
CPC分类号： G03F7/40 , B08B7/00
摘要： One aspect of the present invention relates to a method of cleaning a patterned photoresist clad structure involving the steps of contacting the patterned photoresist clad structure with an alcohol vapor comprising at least one compound having the Formula ROH, wherein R is a hydrocarbon group comprising from 4 to about 8 carbon atoms; condensing the alcohol vapor on the patterned photoresist clad structure; and removing the condensed alcohol vapor from the patterned photoresist clad structure. Another aspect of the present invention involves the use of an alcohol vapor having a boiling point from about 102° C. to about 175° C. Yet another aspect of the present invention involves the use of an alcohol vapor having a flash point from about 15° C. to about 80° C.
摘要翻译：本发明的一个方面涉及一种清洁图案化光致抗蚀剂包覆结构的方法，该方法包括以下步骤：使图案化的光致抗蚀剂包覆结构与包含至少一种具有式ROH的化合物的醇蒸气接触，其中R是包含4 至约8个碳原子; 在图案化的光致抗蚀剂包层结构上冷凝酒精蒸气; 并从图案化的光致抗蚀剂包覆结构去除冷凝的醇蒸气。本发明的另一方面涉及使用沸点为约102℃至约175℃的醇蒸气。本发明的另一方面涉及使用闪点为约15℃的醇蒸汽 ℃至约80℃

9. 发明授权

US06650422B2 Scatterometry techniques to ascertain asymmetry profile of features and generate a feedback or feedforward process control data associated therewith 有权
标题翻译：散射技术来确定特征的不对称轮廓，并产生与之相关联的反馈或前馈过程控制数据
公开(公告)号：US06650422B2
公开(公告)日：2003-11-18
申请号：US09817820
申请日：2001-03-26
申请人： Bhanwar Singh , Michael K. Templeton , Bharath Rangarajan , Ramkumar Subramanian
发明人： Bhanwar Singh , Michael K. Templeton , Bharath Rangarajan , Ramkumar Subramanian
IPC分类号： G01B1100
CPC分类号： G01B11/30 , G01B11/24 , G01B11/26 , G01N21/211 , G01N21/4738 , G01N21/9501
摘要： The present invention is directed to a method and a system for non-destructively, efficiently and accurately detecting asymmetry in the profile of a feature formed on a wafer during the process of semiconductor fabrication. The method encompasses directing a beam of light or radiation at a feature and detecting a reflected beam associated therewith. Data associated with the reflected beam is correlated with data associated with known feature profiles to ascertain profile characteristics associated with the feature of interest. Using the profile characteristics, an asymmetry of the feature is determined which is then used to generate feedback or feedforward process control data to compensate for or correct such asymmetry in subsequent processing.
摘要翻译：本发明涉及一种用于在半导体制造过程中非破坏性地，有效地和准确地检测在晶片上形成的特征的轮廓的不对称性的方法和系统。该方法包括在特征处引导光束或辐射，并且检测与其相关联的反射光束。与反射光束相关联的数据与与已知特征轮廓相关联的数据相关联，以确定与感兴趣特征相关联的轮廓特征。使用简档特征，确定特征的不对称性，然后将其用于产生反馈或前馈过程控制数据，以补偿或纠正随后处理中的这种不对称性。

10. 发明授权

US06645702B1 Treat resist surface to prevent pattern collapse 失效
标题翻译：处理抗蚀剂表面以防止图案塌陷
公开(公告)号：US06645702B1
公开(公告)日：2003-11-11
申请号：US10050438
申请日：2002-01-16
申请人： Bharath Rangarajan , Michael K. Templeton , Bhanwar Singh
发明人： Bharath Rangarajan , Michael K. Templeton , Bhanwar Singh
IPC分类号： G03F700
CPC分类号： G03F7/265 , H01L21/0273 , H01L21/31144 , H01L21/32139
摘要： The present invention relates to systems and methods for increasing the hydrophobicity of patterned resists. In one embodiment, the present invention relates to a method of processing an ultra-thin resist, involving depositing the ultra-thin photoresist over a semiconductor substrate; irradiating the ultra-thin resist with electromagnetic radiation; developing the ultra-thin resist with a developer to form a patterned resist, the patterned resist having a surface with a first hydrophobicity; contacting the patterned resist with a transition solvent to provide the surface of the patterned resist with a second hydrophobicity, wherein the second hydrophobicity is greater than the first hydrophobicity and contact of the patterned resist with the transition is conducted between developing the ultra-thin resist and rinsing patterned resist; and rinsing the patterned resist having the second hydrophobicity with an aqueous solution.
摘要翻译：本发明涉及增加图案化抗蚀剂疏水性的系统和方法。在一个实施例中，本发明涉及一种处理超薄抗蚀剂的方法，包括在半导体衬底上沉积超薄光致抗蚀剂; 用电磁辐射照射超薄抗蚀剂; 用显影剂显影超薄抗蚀剂以形成图案化抗蚀剂，图案化抗蚀剂具有第一疏水性表面; 使图案化的抗蚀剂与过渡溶剂接触以提供具有第二疏水性的图案化抗蚀剂的表面，其中第二疏水性大于第一疏水性，并且图案化的抗蚀剂与转变的接触在显影超薄抗蚀剂和冲洗图案抗蚀剂; 并用水溶液冲洗具有第二疏水性的图案化抗蚀剂。

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