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    • 4. 发明授权
    • Integrated circuit power supply having piecewise linearity
    • 具有分段线性的集成电路电源
    • US5552739A
    • 1996-09-03
    • US559414
    • 1995-11-15
    • Brent KeethPaul S. ZagarBrian M. ShirleyStephen L. Casper
    • Brent KeethPaul S. ZagarBrian M. ShirleyStephen L. Casper
    • G05F1/46G05F1/10
    • G05F1/465
    • A power supply for an integrated circuit has a piecewise linear operating characteristic for improved integrated circuit testing and screening. In an integrated circuit that receives an externally applied power signal, designated V.sub.CCX, and includes a power supply for generating an internal operating voltage, designated V.sub.CCR, an on-chip power supply circuit provides V.sub.CCR as a piecewise linear function of V.sub.CCX. In a first segment of such a function, V.sub.CCR approximates V.sub.CCX for efficient low voltage operations. In a second segment, used for normal operations of the integrated circuit, V.sub.CCR rises gradually with V.sub.CCX so that test results at the edges of the segment can be guaranteed with a margin for measurement tolerance, process variation, and derating. In a third segment, V.sub.CCR follows below V.sub.CCX at a predetermined constant offset. Transitions between segments are smooth due to nonlinear devices used in the power supply circuitry. When used in a dynamic random access memory integrated circuit, operation in the first segment provides data retention at low power consumption. Operation in the second segment supports speed grading individual devices with a margin for properly stating memory performance specifications. Operation in the third segment supports screening at elevated temperatures for identifying weak and defective memory devices.
    • 集成电路的电源具有分段线性工作特性,用于改进的集成电路测试和屏蔽。 接收外部施加的电源信号(指定为VCCX)的集成电路中,包括用于产生内部工作电压的电源(指定为VCCR),片上电源电路提供VCCR作为VCCX的分段线性功能。 在这种功能的第一段中,VCCR逼近VCCX以实现有效的低电压操作。 在用于集成电路的正常操作的第二段中,VCCR随着VCCX逐渐上升,从而可以保证测量公差,工艺变化和降额的边缘上的测试结果。 在第三部分中,VCCR在预定的常数偏移下遵循VCCX以下。 由于电源电路中使用的非线性器件,片段之间的转换是平滑的。 当在动态随机存取存储器集成电路中使用时,第一段中的操作以低功耗提供数据保持。 第二部分中的操作支持对具有裕量的各个设备进行速度分级,以正确说明内存性能规格。 第三部分的操作支持在升高的温度下进行筛选以识别弱和有缺陷的存储器件。
    • 6. 发明授权
    • Dynamic random-access memory having a hierarchical data path
    • 具有分层数据路径的动态随机存取存储器
    • US5999480A
    • 1999-12-07
    • US167259
    • 1998-10-06
    • Adrian OngPaul S. ZagarTroy ManningBrent KeethKen Waller
    • Adrian OngPaul S. ZagarTroy ManningBrent KeethKen Waller
    • G11C5/02G11C7/10G11C11/4096G11C29/00G11C29/36G11C8/00
    • G11C29/785G11C11/4096G11C29/80G11C29/88G11C5/025G11C7/10G11C29/36
    • A semiconductor dynamic random-access memory (DRAM) device embodying numerous features that collectively and/or individually prove beneficial and advantageous with regard to such considerations as density, power consumption, speed, and redundancyis disclosed. The device is a 64 Mbit DRAM comprising eight substantially identical 8 Mbit partial array blocks (PABs), each pair of PABs comprising a 16 Mbit quadrant of the device. Between the top two quadrants and between the bottom two quadrants are column blocks containing I/O read/write circuitry, column redundancy fuses, and column decode circuitry. Column select lines originate from the column blocks and extend right and left across the width of each quadrant. Each PAB comprises eight substantially identical 1Mbit sub-array blocks (SABs). Associated with each SAB are a plurality of local row decoder circuits functioning to receive partially decoded row addresses from a column predecoder circuit and generating local row addresses supplied to the SAB with which they are associated. A hierarchical data path is provided wherein a plurality of multiplexers are distributed throughout each SAB, these multiplexers functioning to selectively couple sense amplifier output signals to local data I/O lines associated with each SAB. In one embodiment, the data path multiplexers are physically disposed within gaps defined by adjacent ones of the local row address decoders distributed throughout each SAB.
    • 一种体现许多特征的半导体动态随机存取存储器(DRAM)装置,其集合和/或单独证明在所公开的诸如密度,功耗,速度和冗余度之类的考虑方面是有益和有利的。 该器件是包括八个基本上相同的8兆位部分阵列块(PAB)的64Mbit DRAM,每对PAB包括该器件的16Mb象限。 顶部两个象限之间和底部两个象限之间是包含I / O读/写电路,列冗余保险丝和列解码电路的列块。 列选择线来自列块,并在每个象限的宽度上左右延伸。 每个PAB包括八个基本相同的1M位子阵列块(SAB)。 与每个SAB相关联的是多个本地行解码器电路,用于从列预解码器电路接收部分解码的行地址,并产生提供给与它们相关联的SAB的本地行地址。 提供了分层数据路径,其中多个复用器分布在每个SAB中,这些多路复用器用于选择性地将感测放大器输出信号耦合到与每个SAB相关联的本地数据I / O线。 在一个实施例中,数据路径多路复用器物理地布置在分布在每个SAB中的相邻的本地行地址解码器限定的间隙内。
    • 8. 发明授权
    • High speed global row redundancy system
    • 高速全局行冗余系统
    • US6104645A
    • 2000-08-15
    • US659724
    • 1996-06-06
    • Adrian OngPaul S. Zagar
    • Adrian OngPaul S. Zagar
    • G11C29/00G11C7/00
    • G11C29/808
    • A row repair system for replacing a defective primary memory row with a redundant memory row within an entire section of an integrated circuit memory chip. The system comprises a dedicated match circuit for each redundant row in a given section. The match circuit analyzes incoming address information to determine whether the address corresponds to a memory location in a specific defective row in any one of a number of sub-array blocks within the section. When such a critical address is detected, the match circuit activates circuitry which inhibits access to the defective row and enables access to its dedicated redundant row.
    • 用于在集成电路存储器芯片的整个部分内用冗余存储器行替换有缺陷的主存储器行的行修复系统。 该系统包括用于给定部分中的每个冗余行的专用匹配电路。 匹配电路分析输入地址信息以确定地址是否对应于该区段内的多个子阵列块中的任何一个中的特定缺陷行中的存储器位置。 当检测到这样的关键地址时,匹配电路激活禁止对缺陷行进行访问并允许访问其专用冗余行的电路。