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1. 发明授权

US06534507B1 Methods for treating psychological disorders using bioactive metabolites of gepirone 有权
标题翻译：使用吉非隆的生物活性代谢物治疗心理障碍的方法
公开(公告)号：US06534507B1
公开(公告)日：2003-03-18
申请号：US09709741
申请日：2000-11-13
申请人： Stephen J. Kramer , Louis F. Fabre , Edward H. Ruediger , Joseph P. Yevich
发明人： Stephen J. Kramer , Louis F. Fabre , Edward H. Ruediger , Joseph P. Yevich
IPC分类号： A61K31506
CPC分类号： A61K31/506
摘要： Bioactive gepirone metabolites, such as 3-OH gepirone (4,4,-dimethyl-3-hydroxy-1-[4-[4-(2-pyrimidinyl)-1-piperazinyl]butyl]-2,6-piperidinedione), and their pharmaceutically acceptable salts and hydrates, can be used to alleviate psychological disorders or the symptoms thereof. The use of these compounds provides advantages over other therapeutic azapirones as they possess superior bioavailability, faster onset of action, and more stable plasma levels when administered to a mammal.
摘要翻译：生物活性吉非隆代谢物，如3-OH吉哌隆（4,4'-二甲基-3-羟基-1- [4- [4-（2-嘧啶基）-1-哌嗪基]丁基] -2,6-哌啶二酮），及其药学上可接受的盐和水合物可用于缓解心理障碍或其症状。这些化合物的使用提供了优于其它治疗性氮芥的优点，因为它们具有优异的生物利用度，更快的作用发作和当给予哺乳动物时更稳定的血浆水平。

2. 发明申请

US20120001539A1 Plasma-Generating Structures, Display Devices, and Methods of Forming Plasma-Generating Structures 失效
标题翻译：等离子体发生结构，显示装置和形成等离子体发生结构的方法
公开(公告)号：US20120001539A1
公开(公告)日：2012-01-05
申请号：US13231806
申请日：2011-09-13
申请人： Neal Rueger , Stephen J. Kramer
发明人： Neal Rueger , Stephen J. Kramer
IPC分类号： H01J17/49 , H01J9/02 , H01J61/09
CPC分类号： H01J9/02 , H01J11/10 , H01J37/32596 , H05H1/2406 , H05H1/46 , H05H2001/466
摘要： Some embodiments include methods of forming plasma-generating microstructures. Aluminum may be anodized to form an aluminum oxide body having a plurality of openings extending therethrough. Conductive liners may be formed within the openings, and circuitry may be formed to control current flow through the conductive liners. The conductive liners form a plurality of hollow cathodes, and the current flow is configured to generate and maintain plasmas within the hollow cathodes. The plasmas within various hollow cathodes, or sets of hollow cathodes, may be independently controlled. Such independently controlled plasmas may be utilized to create a pattern in a display, or on a substrate. In some embodiments, the plasmas may be utilized for plasma-assisted etching and/or plasma-assisted deposition. Some embodiments include constructions and assemblies containing multiple plasma-generating structures.
摘要翻译：一些实施例包括形成等离子体产生微结构的方法。铝可以被阳极化以形成具有延伸穿过其中的多个开口的氧化铝体。可以在开口内形成导电衬里，并且可以形成电路以控制通过导电衬套的电流。导电衬里形成多个中空阴极，并且电流流动被配置为在中空阴极内产生和维持等离子体。各种空心阴极内的等离子体或一组空心阴极可以独立控制。这种独立控制的等离子体可用于在显示器或基板上产生图案。在一些实施例中，等离子体可用于等离子体辅助蚀刻和/或等离子体辅助沉积。一些实施例包括包含多个等离子体产生结构的构造和组件。

3. 发明申请

US20100102031A1 Methods Of Forming Plasma-Generating Structures; Methods Of Plasma-Assisted Etching, And Methods Of Plasma-Assisted Deposition 有权
标题翻译：形成等离子体发生结构的方法; 等离子体辅助蚀刻的方法和等离子体辅助沉积的方法
公开(公告)号：US20100102031A1
公开(公告)日：2010-04-29
申请号：US12633674
申请日：2009-12-08
申请人： Neal Rueger , Stephen J. Kramer
发明人： Neal Rueger , Stephen J. Kramer
IPC分类号： H01L21/3065 , H05H1/24 , H01L21/3205
CPC分类号： H01J9/02 , H01J11/10 , H01J37/32596 , H05H1/2406 , H05H1/46 , H05H2001/466
摘要： Some embodiments include methods of forming plasma-generating microstructures. Aluminum may be anodized to form an aluminum oxide body having a plurality of openings extending therethrough. Conductive liners may be formed within the openings, and circuitry may be formed to control current flow through the conductive liners. The conductive liners form a plurality of hollow cathodes, and the current flow is configured to generate and maintain plasmas within the hollow cathodes. The plasmas within various hollow cathodes, or sets of hollow cathodes, may be independently controlled. Such independently controlled plasmas may be utilized to create a pattern in a display, or on a substrate. In some embodiments, the plasmas may be utilized for plasma-assisted etching and/or plasma-assisted deposition. Some embodiments include constructions and assemblies containing multiple plasma-generating structures.
摘要翻译：一些实施例包括形成等离子体产生微结构的方法。铝可以被阳极化以形成具有延伸穿过其中的多个开口的氧化铝体。可以在开口内形成导电衬里，并且可以形成电路以控制通过导电衬套的电流。导电衬里形成多个中空阴极，并且电流流动被配置为在中空阴极内产生和维持等离子体。各种空心阴极内的等离子体或一组空心阴极可以独立控制。这种独立控制的等离子体可用于在显示器或基板上产生图案。在一些实施例中，等离子体可用于等离子体辅助蚀刻和/或等离子体辅助沉积。一些实施例包括包含多个等离子体产生结构的构造和组件。

4. 发明授权

US07625495B2 Methods and apparatuses for monitoring and controlling mechanical or chemical-mechanical planarization of microelectronic substrate assemblies 失效
公开(公告)号：US07625495B2
公开(公告)日：2009-12-01
申请号：US11341132
申请日：2006-01-27
申请人： Jim Hofmann , Gundu M. Sabde , Stephen J. Kramer , Scott E. Moore
发明人： Jim Hofmann , Gundu M. Sabde , Stephen J. Kramer , Scott E. Moore
IPC分类号： H01L21/302 , B24B49/00
CPC分类号： B24B37/013 , B24B21/04 , B24B37/042 , B24B49/16 , H01L21/31053 , H01L22/26
摘要： Methods and devices for mechanical and/or chemical-mechanical planarization of semiconductor wafers, field emission displays and other microelectronic substrate assemblies. One method of planarizing a microelectronic substrate assembly in accordance with the invention includes pressing a substrate assembly against a planarizing surface of a polishing pad at a pad/substrate interface defined by a surface area of the substrate assembly contacting the planarizing surface. The method continues by moving the substrate assembly and/or the polishing pad with respect to the other to rub at least one of the substrate assembly and the planarizing surface against the other at a relative velocity. As the substrate assembly and polishing pad rub against each other, a parameter indicative of drag force between the substrate assembly and the polishing pad is measured or sensed at periodic intervals. The drag force parameter, for example, can be lateral displacement or lateral forces between a first component coupled to one of the substrate assembly or the polishing pad and a second component in either a carrier assembly holding the substrate assembly or a table supporting the polishing pad. The drag force parameter can be measured along a lateral axis to produce a waveform having minimum and maximum peaks relative to minimum and maximum peak drag forces between the substrate assembly and the polishing pad along the axis. The maximum peak drag forces or the difference of the minimum and maximum peak drag forces are processed to generate a force-time relationship. The status of a parameter, such as the onset of planarity or the endpoint of the process, is then estimated by analyzing the force-time relationship.

5. 发明授权

US07598181B2 Process for enhancing solubility and reaction rates in supercritical fluids 有权
标题翻译：提高超临界流体溶解度和反应速率的方法
公开(公告)号：US07598181B2
公开(公告)日：2009-10-06
申请号：US11184202
申请日：2005-07-19
申请人： Theodore M. Taylor , Stephen J. Kramer
发明人： Theodore M. Taylor , Stephen J. Kramer
IPC分类号： H01L21/302
CPC分类号： H01L21/30604 , C23C18/00 , H01L21/02101 , H01L21/288
摘要： Processes for enhancing solubility and the reaction rates in supercritical fluids are provided. In preferred embodiments, such processes provide for the uniform and precise deposition of metal-containing films on semiconductor substrates as well as the uniform and precise removal of materials from such substrates. In one embodiment, the process includes, providing a supercritical fluid containing at least one reactant, the supercritical fluid being maintained at above its critical point, exposing at least a portion of the surface of the semiconductor substrate to the supercritical fluid, applying acoustic energy, and reacting the at least one reactant to cause a change in at least a portion of the surface of the semiconductor substrate.
摘要翻译：提供了提高超临界流体溶解度和反应速率的方法。在优选的实施方案中，这样的方法提供了均匀且精确地沉积半导体衬底上的含金属膜以及从这种衬底均匀且精确地去除材料。在一个实施方案中，该方法包括提供含有至少一种反应物的超临界流体，超临界流体保持在其临界点以上，将半导体衬底的至少一部分表面暴露于超临界流体，施加声能，并使所述至少一种反应物反应以引起半导体衬底的至少一部分表面的变化。

6. 发明授权

US07563157B2 Apparatus for conditioning chemical-mechanical polishing pads 失效
标题翻译：化学机械抛光垫调理装置
公开(公告)号：US07563157B2
公开(公告)日：2009-07-21
申请号：US11454501
申请日：2006-06-16
申请人： Stephen J. Kramer
发明人： Stephen J. Kramer
IPC分类号： B24B21/00
CPC分类号： B24B53/017 , B24B53/013 , B24B53/12
摘要： An apparatus for conditioning a polishing pad, or conditioner, includes a supporting substrate and abrasive elements. The abrasive elements of the conditioner are used to condition a polishing pad to be used in abrasive, or at least partially mechanical, semiconductor substrate treatment processes, such as chemical-mechanical polishing or chemical-mechanical planarization processes. The abrasive elements are formed from a material that may be degraded or dissolved by at least one chemical that will not substantially degrade or dissolve a material of the polishing pad. Any residue or particles of, or from, the abrasive elements that stick to or become embedded in the polishing pad are removed therefrom by exposing the polishing pad to the at least one chemical so as to degrade or dissolve the residue or particles without substantially degrading or dissolving a material of the polishing pad.
摘要翻译：用于调理抛光垫或调理剂的设备包括支撑基底和研磨元件。调理剂的研磨元件用于调节用于磨料或至少部分机械的半导体衬底处理工艺（例如化学机械抛光或化学机械平面化工艺）中使用的抛光垫。研磨元件由可被至少一种不会使抛光垫的材料降解或溶解的化学物质降解或溶解的材料形成。通过将抛光垫暴露于至少一种化学物质中，使残留物或颗粒残留物或颗粒从粘附或嵌入抛光垫中的残留物或颗粒中除去，从而使残留物或颗粒不会降解或溶解，溶解抛光垫的材料。

7. 发明授权

US07393741B2 Methods of forming pluralities of capacitors 有权
标题翻译：形成多个电容器的方法
公开(公告)号：US07393741B2
公开(公告)日：2008-07-01
申请号：US11704512
申请日：2007-02-09
申请人： Gurtej S. Sandhu , H. Montgomery Manning , Stephen J. Kramer
发明人： Gurtej S. Sandhu , H. Montgomery Manning , Stephen J. Kramer
IPC分类号： H01L21/8242
CPC分类号： H01L28/91 , H01L27/10817 , H01L27/10852
摘要： The invention comprises methods of forming pluralities of capacitors. In one implementation, metal is formed over individual capacitor storage node locations on a substrate. A patterned masking layer is formed over the metal. The patterned masking layer comprises openings therethrough to an outer surface of the metal. Individual of the openings are received over individual of the capacitor storage node locations. A pit is formed in the metal outer surface within individual of the openings. After forming the pits, the metal is anodically oxidized through the openings effective to form a single metal oxide-lined channel in individual of the openings over the individual capacitor storage nodes. Individual capacitor electrodes are formed within the channels in electrical connection with the individual capacitor storage node locations. At least some of the metal oxide is removed from the substrate, and the individual capacitor electrodes are incorporated into a plurality of capacitors. Other aspects and implementations are contemplated.
摘要翻译：本发明包括形成多个电容器的方法。在一个实施方案中，在衬底上的各个电容器存储节点上形成金属。在金属上形成图案化掩模层。图案化掩模层包括通过其穿过金属外表面的开口。各个开口的单独的电容器存储节点位置被接收。在各开口内的金属外表面上形成凹坑。在形成凹坑之后，金属通过开口阳极氧化，有效地在各个电容器存储节点上的开口中形成单个金属氧化物衬里的通道。单独的电容器电极形成在与各个电容器存储节点位置电连接的通道内。从衬底去除至少一些金属氧化物，并且将各个电容器电极结合到多个电容器中。考虑了其他方面和实现。

8. 发明授权

US06652363B2 Method and apparatus for uniformly planarizing a microelectronic substrate 有权
公开(公告)号：US06652363B2
公开(公告)日：2003-11-25
申请号：US10121826
申请日：2002-04-11
申请人： Stephen J. Kramer , Scott Meikle
发明人： Stephen J. Kramer , Scott Meikle
IPC分类号： B24B100
CPC分类号： B24B37/24 , B24B37/26 , B24D3/24 , H01L21/31053 , Y10S977/777 , Y10S977/883 , Y10S977/888
摘要： A method and apparatus for planarizing a microelectronic substrate. The apparatus can include a planarizing medium having a relatively hard polishing pad and a planarizing liquid disposed on a generally non-porous planarizing surface of the polishing pad. The planarizing liquid can include a colloidal suspension of colloidal particles having generally smooth external surfaces. The colloidal particles can have a variety of shapes, including a spherical shape, a cylindrical shape, a cubic shape, and a hexagonal shape, among others. The colloidal particles can be formed from a variety of materials, including silicon dioxide, manganese oxide, and cerium oxide.

9. 发明授权

US06568998B2 Method and apparatus for uniformly planarizing a microelectronic substrate 失效
公开(公告)号：US06568998B2
公开(公告)日：2003-05-27
申请号：US10121830
申请日：2002-04-11
申请人： Stephen J. Kramer , Scott Meikle
发明人： Stephen J. Kramer , Scott Meikle
IPC分类号： B24B100
CPC分类号： B24B37/24 , B24B37/26 , B24D3/24 , H01L21/31053 , Y10S977/777 , Y10S977/883 , Y10S977/888
摘要： A method and apparatus for planarizing a microelectronic substrate. The apparatus can include a planarizing medium having a relatively hard polishing pad and a planarizing liquid disposed on a generally non-porous planarizing surface of the polishing pad. The planarizing liquid can include a colloidal suspension of colloidal particles having generally smooth external surfaces. The colloidal particles can have a variety of shapes, including a spherical shape, a cylindrical shape, a cubic shape, and a hexagonal shape, among others. The colloidal particles can be formed from a variety of materials, including silicon dioxide, manganese oxide, and cerium oxide.

10. 发明授权

US09054030B2 Memory cells, semiconductor device structures, memory systems, and methods of fabrication 有权
标题翻译：存储单元，半导体器件结构，存储器系统和制造方法
公开(公告)号：US09054030B2
公开(公告)日：2015-06-09
申请号：US13527262
申请日：2012-06-19
申请人： Wayne I. Kinney , Witold Kula , Stephen J. Kramer
发明人： Wayne I. Kinney , Witold Kula , Stephen J. Kramer
IPC分类号： G11C11/15 , G11C11/00 , H01L29/82 , H01L27/22 , H01L43/08 , H01F10/32
CPC分类号： H01L27/222 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01F10/3218 , H01F10/329 , H01L27/228 , H01L43/02 , H01L43/08 , H01L43/10
摘要： Memory cells are disclosed. Magnetic regions within the memory cells include an alternating structure of magnetic sub-regions and coupler sub-regions. The coupler material of the coupler sub-regions antiferromagnetically couples neighboring magnetic sub-regions and effects or encourages a vertical magnetic orientation exhibited by the neighboring magnetic sub-regions. Neighboring magnetic sub-regions, spaced from one another by a coupler sub-region, exhibit oppositely-directed magnetic orientations. The magnetic and coupler sub-regions may each be of a thickness tailored to form the magnetic region in a compact structure. Interference between magnetic dipole fields emitted from the magnetic region on switching of a free region in the memory cell may be reduced or eliminated. Also disclosed are semiconductor device structures, spin torque transfer magnetic random access memory (STT-MRAM) systems, and methods of fabrication.
摘要翻译：公开了存储单元。存储单元内的磁性区域包括磁性子区域和耦合器子区域的交替结构。耦合器子区域的耦合器材料反铁磁耦合相邻磁性子区域并且影响或促进相邻磁性子区域呈现的垂直磁性取向。通过耦合器子区彼此间隔开的相邻的磁子区域表现出相反方向的磁取向。磁性和耦合器子区域可以各自具有被调整以在紧凑结构中形成磁性区域的厚度。可以减少或消除在切换存储单元中的自由区域时从磁性区域发射的磁偶极子场之间的干扰。还公开了半导体器件结构，自旋扭矩传递磁随机存取存储器（STT-MRAM）系统和制造方法。

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