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1. 发明授权

US07557047B2 Method of forming a layer of material using an atomic layer deposition process 失效
标题翻译：使用原子层沉积工艺形成材料层的方法
公开(公告)号：US07557047B2
公开(公告)日：2009-07-07
申请号：US11423197
申请日：2006-06-09
申请人： Neal Rueger , John Smythe
发明人： Neal Rueger , John Smythe
IPC分类号： H01L21/31
CPC分类号： C23C16/45525 , C23C16/45536
摘要： Disclosed is a method of forming a layer of material using an atomic layer deposition (ALD) process in a process chamber of a process tool. In one illustrative embodiment, the method includes identifying a target characteristic for the layer of material, determining a precursor pulse time for introducing a precursor gas into the process chamber during the ALD process to produce the target characteristic in the layer of material, and performing the ALD process that comprises a plurality of steps wherein the precursor gas is introduced into the chamber for the determined precursor pulse time to thereby form the layer of material.
摘要翻译：公开了一种在处理工具的处理室中使用原子层沉积（ALD）工艺形成材料层的方法。在一个说明性实施例中，该方法包括识别材料层的目标特性，确定用于在ALD过程期间将前体气体引入处理室的前体脉冲时间，以在材料层中产生目标特性，并执行 ALD方法，其包括多个步骤，其中将前体气体引入到室中用于所确定的前体脉冲时间，从而形成材料层。

2. 发明申请

US20070138577A1 Transistor Structures 审中-公开
标题翻译：晶体管结构
公开(公告)号：US20070138577A1
公开(公告)日：2007-06-21
申请号：US11677923
申请日：2007-02-22
申请人： Gurtej Sandhu , John Moore , Neal Rueger
发明人： Gurtej Sandhu , John Moore , Neal Rueger
IPC分类号： H01L29/76 , H01L21/8238
CPC分类号： H01L21/02332 , H01L21/0234 , H01L21/265 , H01L21/28061 , H01L21/28167 , H01L21/28185 , H01L21/28202 , H01L21/3144 , H01L29/513 , H01L29/518 , H01L29/6659 , H01L29/7833
摘要： The invention encompasses a method of incorporating nitrogen into a silicon-oxide-containing layer. The silicon-oxide-containing layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer. The nitrogen is subsequently thermally annealed within the layer to bond at least some of the nitrogen to silicon within the layer. The invention also encompasses a method of forming a transistor. A gate oxide layer is formed over a semiconductive substrate. The gate oxide layer comprises silicon dioxide. The gate oxide layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer, and the layer is maintained at less than or equal to 400° C. during the exposing. Subsequently, the nitrogen within the layer is thermally annealed to bond at least a majority of the nitrogen to silicon. At least one conductive layer is formed over the gate oxide layer. Source/drain regions are formed within the semiconductive substrate, and are gatedly connected to one another by the at least one conductive layer. The invention also encompasses transistor structures.
摘要翻译：本发明包括将氮掺入含氧化硅的层中的方法。将含氧化硅的层暴露于含氮等离子体中以将氮引入层中。氮气随后在层内热退火以将至少一些氮与硅结合在层内。本发明还包括形成晶体管的方法。在半导体衬底上形成栅氧化层。栅氧化层包括二氧化硅。将栅极氧化层暴露于含氮等离子体中以将氮引入层中，并且在暴露期间该层保持在小于或等于400℃。随后，层内的氮被热退火以将至少大部分氮与硅结合。在栅极氧化物层上形成至少一个导电层。源极/漏极区域形成在半导体衬底内，并且通过至少一个导电层彼此门控连接。本发明还包括晶体管结构。

3. 发明申请

US20070134816A1 Atomic layer deposition using electron bombardment 失效
公开(公告)号：US20070134816A1
公开(公告)日：2007-06-14
申请号：US11704660
申请日：2007-02-09
申请人： Neal Rueger
发明人： Neal Rueger
IPC分类号： H01L21/00 , C30B23/00 , H01L21/8234
CPC分类号： C30B25/14 , C23C16/45529 , C23C16/45536 , C23C16/487
摘要： Formation of a layer of material on a surface by atomic layer deposition methods and systems includes using electron bombardment of the chemisorbed precursor.

4. 发明申请

US20060265868A1 Inter-metal dielectric fill 审中-公开
公开(公告)号：US20060265868A1
公开(公告)日：2006-11-30
申请号：US11487027
申请日：2006-07-14
申请人： Neal Rueger , Chris Hill , Zailong Bian , John Smythe
发明人： Neal Rueger , Chris Hill , Zailong Bian , John Smythe
IPC分类号： H01R43/00
CPC分类号： H01L21/76837 , H01L21/76834 , H01L23/53223 , H01L23/53295 , H01L2924/0002 , Y10T29/49117 , H01L2924/00
摘要： An inter-metal dielectric (IMD) fill process includes depositing an insulating nanolaminate barrier layer. The nanolaminate is preferably an oxide liner formed by using an alternating layer deposition process. The layer is highly conformal and is an excellent diffusion barrier. Gaps between metal lines are filled using high density plasma chemical vapor deposition with a reactive species gas. The barrier layer protects the metal lines from shorts between neighboring layers. The resulting structure has substantially uneroded metal lines and an insulating IMD fill.

5. 发明申请

US20060264012A1 Plasma processing, deposition, and ALD methods 失效
公开(公告)号：US20060264012A1
公开(公告)日：2006-11-23
申请号：US11492613
申请日：2006-07-24
申请人： Neal Rueger
发明人： Neal Rueger
IPC分类号： H01L21/26
CPC分类号： H01L21/0228 , C23C16/34 , C23C16/45542 , C23C16/515 , H01L21/02274 , H01L21/3141
摘要： A plasma processing method includes providing a substrate in a processing chamber, the substrate having a surface, and generating a plasma in the processing chamber. The plasma provides at least two regions that exhibit different plasma densities. The method includes exposing at least some of the surface to both of the at least two regions. Exposing the surface to both of the at least two regions may include rotating the plasma and may cyclically expose the surface to the plasma density differences. Exposing to both of the at least two regions may modify a composition and/or structure of the surface. The plasma may include a plasmoid characterized by a steady state plasma wave providing multiple plasma density lobes uniformly distributed about an axis of symmetry and providing plasma between the lobes exhibiting lower plasma densities. Depositing the layer can include ALD and exposure may remove an ALD precursor ligand.

6. 发明申请

US20060260750A1 Plasma processing apparatuses and methods 审中-公开
公开(公告)号：US20060260750A1
公开(公告)日：2006-11-23
申请号：US11492500
申请日：2006-07-24
申请人： Neal Rueger
发明人： Neal Rueger
IPC分类号： C23F1/00 , H01L21/20 , H01L21/302 , C23C16/00 , H01L21/31
CPC分类号： H01L21/3065 , C23C16/045 , C23C16/452 , C23C16/45542 , C23C16/45544 , C23C16/487 , C23C16/50 , H01J37/32357 , H01J37/32422 , H01J37/32623 , H01L21/02164 , H01L21/02274 , H01L21/3141 , H01L21/31608
摘要： A plasma processing apparatus and method includes a processing chamber having a substrate support and at least two separate and independently controlled devices selected from the following three devices: a first plasma generator, a second plasma generator, and an electron source. The first plasma generator directs plasma-generated cations toward the substrate support. The second plasma generator directs plasma-generated reactive neutral species toward the substrate support. The electron source directs electrons toward the substrate support. The first chamber may be separated from the substrate by an ion filter and the method may include directing predominately cations, rather than electrons, through the filter to the substrate. Along with the step of generating a remote plasma, the method may also includes directing predominately reactive neutral species, rather than ions and electrons, to the substrate. The apparatus or method may reduce structural charging on the substrate.

7. 发明申请

US20060228815A1 Inductively coupled plasma chamber attachable to a processing chamber for analysis of process gases 审中-公开
标题翻译：电感耦合等离子体室，可连接到处理室，用于分析工艺气体
公开(公告)号：US20060228815A1
公开(公告)日：2006-10-12
申请号：US11449536
申请日：2006-06-07
申请人： Neal Rueger
发明人： Neal Rueger
IPC分类号： H01L21/00 , C23F1/00
CPC分类号： H01J37/32357
摘要： Disclosed herein are exemplary embodiments of an improved Inductively Coupled Plasma (ICP) chamber which is externally coupleable to a processing chamber to monitor processes gases therefrom. The disclosed ICP chamber design is beneficial because it allows for the porting of reference gases for the purpose of performing actinometry, and/or allows for the introduction of plasma probes into the plasma within the ICP chamber, both of which improve the reliability of process gas concentration determinations. Also disclosed is a processing system for interfacing the ICP chamber to the processing chamber and for controlling both.
摘要翻译：本文公开了改进的电感耦合等离子体（ICP）室的示例性实施例，其外部可耦合到处理室以监测其处理气体。所公开的ICP腔室设计是有益的，因为它允许参考气体的移植以进行光化学测量，和/或允许将等离子体探针引入ICP腔内的等离子体，这两者都提高了工艺气体的可靠性浓度测定。还公开了一种用于将ICP室与处理室接口并用于控制两者的处理系统。

8. 发明申请

US20060165873A1 Plasma detection and associated systems and methods for controlling microfeature workpiece deposition processes 审中-公开
标题翻译：等离子体检测以及用于控制微特征工件沉积工艺的相关系统和方法
公开(公告)号：US20060165873A1
公开(公告)日：2006-07-27
申请号：US11043629
申请日：2005-01-25
申请人： Neal Rueger , Sanket Sant
发明人： Neal Rueger , Sanket Sant
IPC分类号： C23C16/52 , H01L21/306 , H05H1/24 , B05C11/00 , C23C16/00
CPC分类号： H01J37/32935 , C23C16/45525 , C23C16/45542 , C23C16/511 , C23C16/52
摘要： Systems and methods for detecting plasmas and/or controlling microfeature workpiece deposition processes are disclosed. A method in accordance with one embodiment includes placing a microfeature workpiece in a plasma chamber, detecting a plasma in the plasma chamber while the microfeature workpiece is in the plasma chamber, and controlling processing of the microfeature workpiece in the plasma chamber based at least in part on the detection of the plasma. A controller in accordance with another embodiment of the invention can be configured to receive an indication of plasma initiation, track an exposure time based on the indication of plasma initiation, and compare the exposure time to a target value. If the exposure time meets or exceeds the target value, the controller can direct the plasma to be extinguished. If an indication that the plasma has been extinguished is received prior to the target exposure time being met, the controller can halt tracking the exposure time, await an indication of plasma re-initiation, and restart tracking the exposure time when the indication of plasma re-initiation is received.
摘要翻译：公开了用于检测等离子体和/或控制微特征工件沉积工艺的系统和方法。根据一个实施例的方法包括将微特征工件放置在等离子体室中，在微特征工件处于等离子体室期间检测等离子体腔中的等离子体，以及至少部分地控制微特征工件在等离子体室中的处理对等离子体的检测。根据本发明的另一实施例的控制器可以被配置为接收等离子体启动的指示，基于等离子体启动的指示跟踪曝光时间，并将曝光时间与目标值进行比较。如果曝光时间达到或超过目标值，则控制器可以引导等离子体熄灭。如果在目标曝光时间满足之前接收到等离子体已经熄灭的指示，则控制器可以停止跟踪曝光时间，等待等离子体重新启动的指示，并且当等离子体重新指示时重新开始跟踪曝光时间收到通知。

9. 发明申请

US20060134345A1 Systems and methods for depositing material onto microfeature workpieces 审中-公开
标题翻译：将材料沉积在微型工件上的系统和方法
公开(公告)号：US20060134345A1
公开(公告)日：2006-06-22
申请号：US11018142
申请日：2004-12-20
申请人： Neal Rueger , Joel Drewes
发明人： Neal Rueger , Joel Drewes
IPC分类号： H05H1/24 , C23C16/00
CPC分类号： C23C16/45536 , C23C16/45551
摘要： Systems and methods for depositing materials onto a microfeature workpiece are disclosed herein. In one embodiment, a system includes a first deposition chamber, a gas distributor carried by the first deposition chamber, a second deposition chamber operably coupled to the first deposition chamber, an energy source, and a workpiece support movable between the first and second deposition chambers. The energy source is configured to generate a plasma energy and direct the plasma energy toward a plasma zone in the second deposition chamber. The system may also include a barrier positioned in the second deposition chamber to divide the plasma zone into a first zone and a second zone. The barrier is configured to selectively control the movement of ions from the first zone to the second zone.
摘要翻译：本文公开了将材料沉积到微特征工件上的系统和方法。在一个实施例中，系统包括第一沉积室，由第一沉积室承载的气体分配器，可操作地耦合到第一沉积室的第二沉积室，能量源和可在第一和第二沉积室之间移动的工件支撑件。能量源被配置为产生等离子体能量并将等离子体能量引导到第二沉积室中的等离子体区域。该系统还可以包括位于第二沉积室中的隔板，以将等离子体区分成第一区和第二区。阻挡层构造成选择性地控制离子从第一区到第二区的移动。

10. 发明申请

US20050011449A1 Gas delivery system for deposition processes, and methods of using same 审中-公开
标题翻译：用于沉积工艺的气体输送系统及其使用方法
公开(公告)号：US20050011449A1
公开(公告)日：2005-01-20
申请号：US10916918
申请日：2004-08-12
申请人： Weimin Li , Neal Rueger , Li Li , Ross Dando , Kevin Hamer , Allen Mardian , Gurtej Sandhu
发明人： Weimin Li , Neal Rueger , Li Li , Ross Dando , Kevin Hamer , Allen Mardian , Gurtej Sandhu
IPC分类号： C23C16/44 , C23C16/455 , C23C16/507 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/455 , C23C16/507
摘要： The present invention is generally directed to a novel gas delivery system for various deposition processes, and various methods of using same. In one illustrative embodiment, a deposition tool comprises a process chamber, a wafer stage adapted for holding a wafer positioned therein, and a gas delivery system positioned in the chamber above a position where a plasma will be generated in the chamber, wherein substantially all of a reactant gas is delivered into the chamber via the gas delivery system. In another illustrative embodiment, the reactant gas exiting the gas delivery system is directed so as to cover substantially all of an area defined by an upper surface of the wafer. In one illustrative embodiment, the method comprises positioning a wafer in a process chamber of a deposition tool, generating a plasma within the process chamber above the wafer, and forming a layer of material above the wafer by introducing substantially all of a reactant gas used to form the layer of material into the process chamber above the plasma via a gas delivery system positioned above the plasma. In another illustrative embodiment, the reactant gas exiting the gas delivery system is directed to cover substantially all of an area defined by an upper surface of the wafer.
摘要翻译：本发明一般涉及用于各种沉积工艺的新型气体输送系统及其使用方法。在一个说明性实施例中，沉积工具包括处理室，适于保持位于其中的晶片的晶片台，以及定位在室中的气体输送系统，其位于室内将产生等离子体的位置，其中基本上全部反应气体通过气体输送系统输送到室中。在另一说明性实施例中，离开气体输送系统的反应物气体被引导以覆盖由晶片的上表面限定的基本上所有的区域。在一个示例性实施例中，该方法包括将晶片定位在沉积工具的处理室中，在晶片上方的处理室内产生等离子体，并且通过将基本上所有的反应气体基本上引入到通过位于等离子体上方的气体输送系统将材料层形成在等离子体上方的处理室中。在另一示例性实施例中，离开气体输送系统的反应物气体被引导以覆盖由晶片的上表面限定的基本上所有的区域。

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