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1. 发明授权

US5674355A Diamond-like carbon for use in VLSI and ULSI interconnect systems 失效
公开(公告)号：US5674355A
公开(公告)日：1997-10-07
申请号：US483682
申请日：1995-06-07
申请人： Stephan Alan Cohen , Daniel Charles Edelstein , Alfred Grill , Jurij Rostyslav Paraszczak , Vishnubhai Vitthalbhai Patel
发明人： Stephan Alan Cohen , Daniel Charles Edelstein , Alfred Grill , Jurij Rostyslav Paraszczak , Vishnubhai Vitthalbhai Patel
IPC分类号： H01L21/8238 , H01L21/314 , H01L21/768 , H01L23/522 , H01L23/532 , H01L27/092 , H01L21/306
CPC分类号： H01L21/3146 , H01L21/02115 , H01L21/0212 , H01L21/02274 , H01L23/5329 , H01L2924/0002
摘要： The present invention relates to semiconductor devices comprising as one of their structural components diamond-like carbon as an insulator for spacing apart one or more levels of a conductor on an integrated circuit chip. The present invention also relates to a method for forming an integrated structure and to the integrated structure produced therefrom. The present invention further provides a method for selectively ion etching a diamond-like carbon layer from a substrate containing such a layer.

2. 发明授权

US5679269A Diamond-like carbon for use in VLSI and ULSI interconnect systems 失效
标题翻译：用于VLSI和ULSI互连系统的类金刚石碳
公开(公告)号：US5679269A
公开(公告)日：1997-10-21
申请号：US631239
申请日：1996-04-12
申请人： Stephan Alan Cohen , Daniel Charles Edelstein , Alfred Grill , Jurij Rostyslav Paraszczak , Vishnubhai Vitthalbhai Patel
发明人： Stephan Alan Cohen , Daniel Charles Edelstein , Alfred Grill , Jurij Rostyslav Paraszczak , Vishnubhai Vitthalbhai Patel
IPC分类号： H01L21/8238 , H01L21/314 , H01L21/768 , H01L23/522 , H01L23/532 , H01L27/092 , H01L21/00 , H01L31/0312
CPC分类号： H01L21/3146 , H01L21/02115 , H01L21/0212 , H01L21/02274 , H01L23/5329 , H01L2924/0002
摘要： The present invention relates to semiconductor devices comprising as one of their structural components diamond-like carbon as an insulator for spacing apart one or more levels of a conductor on an integrated circuit chip. The present invention also relates to a method for forming an integrated structure and to the integrated structure produced therefrom. The present invention further provides a method for selectively ion etching a diamond-like carbon layer from a substrate containing such a layer.
摘要翻译：本发明涉及半导体器件，其包括作为其结构元件之一的类金刚石碳作为绝缘体，用于将集成电路芯片上的一个或多个级别的导体间隔开。本发明还涉及一种形成一体结构的方法及其制造的一体结构。本发明还提供了一种用于从含有这种层的衬底选择性地离子蚀刻类金刚石碳层的方法。

3. 发明授权

US5945155A Low dielectric constant amorphous fluorinated carbon and method of preparation 失效
公开(公告)号：US5945155A
公开(公告)日：1999-08-31
申请号：US972993
申请日：1997-11-19
申请人： Alfred Grill , Vishnubhai Vitthalbhai Patel
发明人： Alfred Grill , Vishnubhai Vitthalbhai Patel
IPC分类号： C01B31/00 , C07C22/08 , C07C25/13 , C23C14/06 , C23C16/27 , C23C16/50 , H01B3/00 , H01L21/312 , H01L21/314 , H01L21/768 , H01L23/522 , C23C16/00
CPC分类号： H01L21/312 , H01L21/0212 , H01L21/02274 , H01L21/3146 , H01L21/76801 , H01L21/76807 , Y10T428/24802 , Y10T428/30 , Y10T428/31678
摘要： An amorphous fluorinated carbon film for use as a dielectric insulating layer in electrical devices is formed from a fluorinated cyclic hydrocarbon precursor. The precursor may be selected from the group consisting of hexafluorobenzene, 1,2-diethynyltetrafluorobenzene and 1,4-bis(trifluoromethyl) benzene. The film is deposited by a radiation or beam assisted deposition technique such as an ion beam assisted deposition method, a laser assisted deposition method, or a plasma assisted chemical vapor deposition method. The film is thermally stable in non-oxidizing environment at temperatures up to 400.degree. C. and has a low dielectric constant of less than 3.0. The film can be suitably used as an insulator for spacing apart conductors in an interconnect structure.

4. 发明授权

US5942769A Low dielectric constant amorphous fluorinated carbon and method of preparation 失效
标题翻译：低介电常数无定形氟化碳及其制备方法
公开(公告)号：US5942769A
公开(公告)日：1999-08-24
申请号：US974081
申请日：1997-11-19
申请人： Alfred Grill , Vishnubhai Vitthalbhai Patel
发明人： Alfred Grill , Vishnubhai Vitthalbhai Patel
IPC分类号： C01B31/00 , C07C22/08 , C07C25/13 , C23C14/06 , C23C16/27 , C23C16/50 , H01B3/00 , H01L21/312 , H01L21/314 , H01L21/768 , H01L23/522 , H01L31/0312
CPC分类号： H01L21/312 , H01L21/0212 , H01L21/02274 , H01L21/3146 , H01L21/76801 , H01L21/76807 , Y10T428/24802 , Y10T428/30 , Y10T428/31678
摘要： An amorphous fluorinated carbon film for use as a dielectric insulating layer in electrical devices is formed from a fluorinated cyclic hydrocarbon precursor. The precursor may be selected from the group consisting of hexafluorobenzene, 1,2-diethynyltetrafluorobenzene and 1,4-bis(trifluoromethyl) benzene. The film is deposited by a radiation or beam assisted deposition technique such as an ion beam assisted deposition method, a laser assisted deposition method, or a plasma assisted chemical vapor deposition method. The film is thermally stable in non-oxidizing environment at temperatures up to 400.degree. C. and has a low dielectric constant of less than 3.0. The film can be suitably used as an insulator for spacing apart conductors in an interconnect structure.
摘要翻译：用作电气装置中的介电绝缘层的无定形氟化碳膜由氟化环状烃前体形成。前体可以选自六氟苯，1,2-二乙炔基四氟苯和1,4-双（三氟甲基）苯。通过辐射或束辅助沉积技术如离子束辅助沉积法，激光辅助沉积法或等离子体辅助化学气相沉积法沉积膜。该膜在高达400℃的非氧化环境下是热稳定的，并具有小于3.0的低介电常数。该膜可以适用于互连结构中用于间隔开导体的绝缘体。

5. 发明授权

US5663854A Prebent ceramic suspension 失效
标题翻译：预浸陶瓷悬浮液
公开(公告)号：US5663854A
公开(公告)日：1997-09-02
申请号：US474616
申请日：1995-06-07
申请人： Alfred Grill , Michael Anthony Moser , Vishnubhai Vitthalbhai Patel , Clinton Davis Snyder , Celia E. Yeack-Scranton, deceased
发明人： Alfred Grill , Michael Anthony Moser , Vishnubhai Vitthalbhai Patel , Clinton Davis Snyder , Celia E. Yeack-Scranton, deceased
IPC分类号： G11B5/48
CPC分类号： G11B5/4833
摘要： The present invention provides a prebent ceramic suspension which includes a ceramic load beam which is bent by a stress patch. With thin film techniques the stress patch is formed on top of the load beam. In the preferred embodiment the patch is amorphous hydrogenated diamond-like carbon. When the suspension is on a wafer the carbon patch exerts a compressive stress on a top surface of the load beam just under the patch. When the suspension is released from the wafer the compressive patch exerts tensile forces on the top surface of the load beam causing an end of the load beam to bend toward the wafer. The amount of bending of the suspension can be accurately controlled by the cross sections of the load beam and the patch as well as the lateral dimensions of the patch. Further control can be achieved by controlling the hydrogen, nitrogen and other additive components of the carbon patch. After fabrication bending can be lessened by machining portions of the patch with a laser beam to effectively negate the stress of these portions. Still further, the patch can be laterally configured so that the suspension forms an arc when preloaded on a disk. During fabrication various layers can be formed by thin film deposition to form an integrated magnetic head-slider-suspension. A pair of prebent ceramic suspensions can be preloaded on adjacent magnetic disks by a single actuator arm.
摘要翻译：本发明提供了一种前置陶瓷悬架，其包括由应力块弯曲的陶瓷载荷梁。利用薄膜技术，应力贴片形成在负载梁的顶部。在优选的实施方案中，贴剂是无定形氢化金刚石样碳。当悬浮液在晶片上时，碳贴片在正好在补片下方的负载梁的顶表面上施加压应力。当悬浮液从晶片释放时，压片在载荷梁的顶表面上施加拉力，使载荷梁的一端向晶片弯曲。可以通过负载梁和贴片的横截面以及贴片的横向尺寸精确地控制悬架的弯曲量。通过控制碳补片的氢，氮和其他添加剂组分可以进一步控制。通过利用激光束加工贴片的部分可以减少制造弯曲之后，有效地消除这些部分的应力。此外，补片可以横向配置，使得悬挂在预先装载在盘上时形成弧。在制造期间，可以通过薄膜沉积形成各种层以形成集成的磁头 - 滑块 - 悬架。一对预制陶瓷悬架可以通过单个执行器臂预载在相邻的磁盘上。

6. 发明授权

US06337518B1 Low dielectric constant amorphous fluorinated carbon and method of preparation 失效
标题翻译：低介电常数无定形氟化碳及其制备方法
公开(公告)号：US06337518B1
公开(公告)日：2002-01-08
申请号：US09418273
申请日：1999-08-23
申请人： Alfred Grill , Vishnubhai Vitthalbhai Patel
发明人： Alfred Grill , Vishnubhai Vitthalbhai Patel
IPC分类号： H01L23485
CPC分类号： H01L21/0212 , H01L21/02274 , H01L21/312 , H01L21/3146 , H01L21/76801 , H01L21/76807 , Y10T428/24802 , Y10T428/30 , Y10T428/31678
摘要： An amorphous fluorinated carbon film for use as a dielectric insulating layer in electrical devices is formed from a fluorinated cyclic hydrocarbon precursor. The precursor may be selected from the group consisting of hexafluorobenzene, 1,2-diethynyltetrafluorobenzene and 1,4-bis(trifluoromethyl) benzene. The film is deposited by a radiation or beam assisted deposition technique such as an ion beam assisted deposition method, a laser assisted deposition method, or a plasma assisted chemical vapor deposition method. The film is thermally stable in non-oxidizing environment at temperatures up to 400° C. and has a low dielectric constant of less than 3.0. The film can be suitably used as an insulator for spacing apart conductors in an interconnect structure.
摘要翻译：用作电气装置中的介电绝缘层的无定形氟化碳膜由氟化环状烃前体形成。前体可以选自六氟苯，1,2-二乙炔基四氟苯和1,4-双（三氟甲基）苯。通过辐射或束辅助沉积技术如离子束辅助沉积法，激光辅助沉积法或等离子体辅助化学气相沉积法沉积膜。该膜在高达400℃的非氧化环境中是热稳定的，并具有小于3.0的低介电常数。该膜可以适用于互连结构中用于间隔开导体的绝缘体。

7. 发明授权

US6147009A Hydrogenated oxidized silicon carbon material 失效
公开(公告)号：US6147009A
公开(公告)日：2000-11-14
申请号：US107567
申请日：1998-06-29
申请人： Alfred Grill , Christopher Vincent Jahnes , Vishnubhai Vitthalbhai Patel , Laurent Claude Perraud
发明人： Alfred Grill , Christopher Vincent Jahnes , Vishnubhai Vitthalbhai Patel , Laurent Claude Perraud
IPC分类号： C23C16/32 , H01L21/312 , H01L21/316 , H01L23/29 , H01L23/522 , H01L23/532
CPC分类号： H01L21/76832 , C23C16/325 , H01L21/02126 , H01L21/02167 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/0228 , H01L21/02304 , H01L21/02362 , H01L21/3122 , H01L21/31633 , H01L23/291 , H01L23/296 , H01L23/5329 , H01L23/53295 , H01L23/5222 , H01L2924/0002 , Y10T428/30
摘要： A low dielectric constant, thermally stable hydrogenated oxidized silicon carbon film which can be used as an interconnect dielectric in IC chips is disclosed. Also disclosed is a method for fabricating a thermally stable hydrogenated oxidized silicon carbon low dielectric constant film utilizing a plasma enhanced chemical vapor deposition technique. Electronic devices containing insulating layers of thermally stable hydrogenated oxidized silicon carbon low dielectric constant materials that are prepared by the method are further disclosed. To enable the fabrication of thermally stable hydrogenated oxidized silicon carbon low dielectric constant film, specific precursor materials having a ring structure are preferred.

8. 发明授权

US6030904A Stabilization of low-k carbon-based dielectrics 失效
标题翻译：低k碳基电介质的稳定化
公开(公告)号：US6030904A
公开(公告)日：2000-02-29
申请号：US916001
申请日：1997-08-21
申请人： Alfred Grill , Christopher Vincent Jahnes , Vishnubhai Vitthalbhai Patel , Katherine Lynn Saenger
发明人： Alfred Grill , Christopher Vincent Jahnes , Vishnubhai Vitthalbhai Patel , Katherine Lynn Saenger
IPC分类号： H01L21/3105 , H01L21/312 , H01L21/768 , H01L21/477
CPC分类号： H01L21/312 , H01L21/31058 , H01L21/76807
摘要： A method for treating a film of carbon-based dielectric material such as diamond-like carbon to remove volatiles is described. The method incorporates the steps of providing a non-oxidizing ambient and heating the film above 350.degree. C. Heating may be by rapid thermal annealing. The dielectric constant of the material may be lowered. A stabilized carbon-based material is provided with less than 0.5% thickness or weight change/hour at a selected temperature at or below 400.degree. C. The invention overcomes the problem of dimensional instability during the incorporation of the material in integrated circuit chips as an intra and inter level dielectric.
摘要翻译：描述了一种用于处理诸如类金刚石碳的碳基电介质材料膜以除去挥发物的方法。该方法包括提供非氧化环境并将膜加热到350℃以上的步骤。加热可以通过快速热退火。材料的介电常数可能会降低。在等于或低于400℃的选定温度下，稳定的碳基材料提供小于0.5％的厚度或重量变化/小时。本发明克服了在将材料掺入集成电路芯片中时的尺寸不稳定性的问题，作为内部和中间电介质。

9. 发明授权

US5981000A Method for fabricating a thermally stable diamond-like carbon film 失效
标题翻译：制造热稳定类金刚石碳膜的方法
公开(公告)号：US5981000A
公开(公告)日：1999-11-09
申请号：US058651
申请日：1998-04-10
申请人： Alfred Grill , Christopher Vincent Jahnes , Vishnubhai Vitthalbhai Patel
发明人： Alfred Grill , Christopher Vincent Jahnes , Vishnubhai Vitthalbhai Patel
IPC分类号： C23C16/26 , C23C16/509 , C23C16/56 , H01L21/314 , B05D3/06
CPC分类号： C23C16/5096 , C23C16/26 , C23C16/56 , H01L21/3146 , Y10S427/103 , Y10S427/104
摘要： A method for fabricating a thermally stable carbon-based low dielectric constant film such as a hydrogenated amorphous carbon film or a diamond-like carbon film in a parallel plate chemical vapor deposition process utilizing plasma enhanced chemical vapor deposition process is disclosed. Electronic devices containing insulating layers of thermally stable carbon-based low dielectric constant materials that are prepared by the method are further disclosed. In order to render the carbon-based low dielectric constant film thermally stable, i.e., at a temperature of at least 400.degree. C., the films are heat treated at a temperature of not less than 350.degree. C. for at least 0.5 hour. To enable the fabrication of thermally stable carbon-based low dielectric constant film, specific precursor materials such as cyclic hydrocarbons should be used, for instance, cyclohexane or benzene. The geometry of the chemical vapor deposition chamber is important in making the present invention thermally stable low dielectric constant films in order to achieve a specific bias voltage on the substrate onto which the electronic structure is formed.
摘要翻译：公开了一种利用等离子体增强化学气相沉积工艺在平行板化学气相沉积工艺中制造热稳定性碳基低介电常数膜的方法，例如氢化无定形碳膜或类金刚石碳膜。还公开了通过该方法制备的含有热稳定性碳基低介电常数材料绝缘层的电子器件。为了使碳基低介电常数膜热稳定，即在至少400℃的温度下，将膜在不低于350℃的温度下热处理至少0.5小时。为了制造热稳定性的碳系低介电常数膜，可以使用环状烃等环状烃等特定的前体材料。化学气相沉积室的几何形状对于使本发明热稳定的低介电常数膜是重要的，以便在其上形成电子结构的基板上实现特定的偏置电压。

10. 发明授权

US5674638A Fluorinated diamond-like carbon protective coating for magnetic recording media devices 失效
标题翻译：用于磁记录介质装置的氟化金刚石类碳保护涂层
公开(公告)号：US5674638A
公开(公告)日：1997-10-07
申请号：US537497
申请日：1995-10-02
申请人： Alfred Grill , Vishnubhai Vitthalbhai Patel
发明人： Alfred Grill , Vishnubhai Vitthalbhai Patel
IPC分类号： G11B5/255 , G11B5/31 , G11B5/72 , G11B5/84 , G11B5/85 , G11B5/851 , G11B5/66
CPC分类号： G11B5/3106 , G11B5/255 , G11B5/72 , G11B5/8408 , Y10S427/106 , Y10S428/90 , Y10T428/265
摘要： An improved wear-resistant protective coating for the surfaces of magnetic recording media devices that is formed of fluorinated diamond-like carbon and deposited by a plasma enhanced chemical vapor deposition process or other suitable methods to provide superior friction-reducing and stiction-reducing properties.
摘要翻译：用于由氟化类金刚石碳形成并通过等离子体增强化学气相沉积工艺或其它合适方法沉积的磁记录介质装置的表面的改进的耐磨保护涂层，以提供优异的减少摩擦和降低阻力的性能。

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