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    • 5. 发明申请
    • Method for producing a luminescence diode chip
    • 发光二极管芯片的制造方法
    • US20050148110A1
    • 2005-07-07
    • US10979359
    • 2004-11-01
    • Hubert OttStefan GrotschHerbert Brunner
    • Hubert OttStefan GrotschHerbert Brunner
    • G21K4/00H01L21/00H01L33/50H01L33/58
    • H01L33/58H01L33/507H01L2224/48091H01L2924/00014
    • A method for producing a luminescence diode chip, in which provision is made of a semiconductor body is provided having an epitaxially grown semiconductor layer sequence having an active zone and a radiation coupling-out area, the active zone emitting an electromagnetic radiation during operation of the luminescence diode, a large part of said electromagnetic radiation being coupled out via the radiation coupling-out area. A luminescence conversion material is arranged downstream of the radiation coupling-out area in an emission direction of the semiconductor body. A radiation-transmissive covering body having a first main area, a second main area opposite to the first main area, and also side areas connecting the first and second main areas. The covering body is applied to the radiation coupling-out area of the semiconductor layer sequence in such a way that the first main area faces the radiation coupling-out area. The application of the covering body is preceded by the application of a first conversion layer, having a luminescence conversion material, to the first main area of the covering body.
    • 提供一种制造发光二极管芯片的方法,其中提供具有半导体本体的外延生长的半导体层序列,其具有有源区和辐射耦合区,所述有源区在操作期间发射电磁辐射 发光二极管,所述电磁辐射的大部分经由辐射耦合输出区被耦合输出。 发光转换材料被布置在半导体本体的发射方向上的辐射耦合输出区域的下游。 具有第一主区域,与第一主区域相对的第二主区域以及连接第一主区域和第二主区域的侧面区域的辐射透射覆盖体。 将覆盖体施加到半导体层序列的辐射耦合出区域,使得第一主区域面向辐射耦合输出区域。 覆盖体的应用之前是将具有发光转换材料的第一转换层应用于覆盖体的第一主区域。
    • 7. 发明申请
    • Headlight and headlight element
    • 头灯和头灯元件
    • US20070008734A1
    • 2007-01-11
    • US10551412
    • 2004-03-24
    • Georg BognerStefan GrotschJoachim Reill
    • Georg BognerStefan GrotschJoachim Reill
    • F21V1/00
    • B60Q1/04F21S41/143F21S41/24F21S41/28F21S41/663F21Y2115/10H01L33/58H01L33/60Y10S362/80
    • A headlight having a multitude of headlight elements, which each have at least one semiconductor chip which emits electromagnetic radiation; a primary optics element, which reduces the divergence of the light which is incident through the light input; and at least one headlight element output, which emits a part of the headlight light from the headlight element. At least some of the headlight element outputs are arranged in at least two groups in such a way that the arrangement of at least one of the groups and/or at least overall arrangement of headlight element outputs of multiple groups corresponds essentially to a desired emission characteristic of the headlight, in that, in particular, it has a shape which corresponds essentially to the cross-sectional shape of a desired headlight beam, wherein the semiconductor chips which belong to the headlight element outputs of one group can each be operated independently of other semiconductor chips. A headlight element is disclosed which is suitable for a headlight such as this.
    • 具有多个头灯元件的头灯,每个头灯元件具有发射电磁辐射的至少一个半导体芯片; 主要光学元件,其减少通过光输入入射的光的发散; 以及至少一个头灯元件输出,其从头灯元件发射一部分前照灯光。 至少一些前灯元件输出以至少两组布置成使得多个组中的组中的至少一个组和/或至少总体布置的大灯组件输出的布置基本上对应于期望的发射特性 特别地,其具有基本上对应于期望的前灯光束的横截面形状的形状,其中属于一组的前灯元件输出的半导体芯片可以分别独立于其它部件操作 半导体芯片。 公开了适合于诸如此类的头灯的头灯元件。
    • 8. 发明申请
    • Luminescence diode chip
    • 发光二极管芯片
    • US20050151141A1
    • 2005-07-14
    • US10978759
    • 2004-11-01
    • Stefan GrotschHerbert BrunnerHubert Ott
    • Stefan GrotschHerbert BrunnerHubert Ott
    • H01L33/50H01L33/58H01L27/15
    • H01L33/50H01L33/58H01L2224/48463
    • A luminescence diode chip with a semiconductor body having an epitaxially grown semiconductor layer sequence with an active zone and a radiation coupling-out area, the active zone emitting an electromagnetic radiation during operation of the luminescence diode chip, which electromagnetic radiation, at least in part, is coupled out via the radiation coupling-out area. The luminescence diode chip has a radiation-transmissive covering body that is arranged downstream of the radiation coupling-out area in an emission direction of the luminescence diode chip and has a first main surface facing the radiation coupling-out area, a second main surface remote from the radiation coupling-out area, and also side faces connecting the first and second main areas. A connecting layer is arranged between the radiation coupling-out area and the covering body, which connecting layer directly connects the covering body to the semiconductor layer sequence and fixes it thereto and has at least one conversion layer with a luminescence conversion material.
    • 一种具有半导体本体的发光二极管芯片,具有具有活性区域和辐射耦合区域的外延生长的半导体层序列,所述有源区域在发光二极管芯片的操作期间发射电磁辐射,该电磁辐射至少部分地 通过辐射耦合输出区域耦合出来。 所述发光二极管芯片具有辐射透射性覆盖体,其在所述发光二极管芯片的发射方向上配置在所述辐射耦合出区域的下游,并且具有面向所述辐射耦合输出区域的第一主表面, 从辐射耦合输出区域,以及连接第一和第二主要区域的侧面。 连接层布置在辐射耦合输出区域和覆盖体之间,该连接层将覆盖体直接连接到半导体层序列并将其固定到其上,并具有至少一个具有发光转换材料的转换层。